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STUDY OF THE EXCHANGE BIAS FIELD OF NiFe/FeMn BILAYERS 被引量:1
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作者 M.H. Li1’2), G.H. Yu1). F. W. Zhu1) and W.Y. Lai2) 1)Department of Material Physics, University of Science and Technology Beijing, Beijing 100083, China 2)State Key Laboratory for Magnetism. Institute of Physics, The Chinese Academy of Sciences, Beijing 《Acta Metallurgica Sinica(English Letters)》 SCIE EI CAS CSCD 2002年第2期238-242,共5页
The exchange bias field of NiFe/FeMn films with Ta/ Cu buffer was proved tobe lower than that of the films with Ta buffer. The crystallographic texture, surface roughness andelements distribution were examined in thes... The exchange bias field of NiFe/FeMn films with Ta/ Cu buffer was proved tobe lower than that of the films with Ta buffer. The crystallographic texture, surface roughness andelements distribution were examined in these two sets of samples, and there is no apparentdifference for the texture and roughness. However, the segregation of Cu atoms above NiFe surface inthe multilayer of Ta/Cu/NiFe has been observed by using the angle-resolved X-ray photoelectronspectroscopy (XPS). The decrease of the exchange bias field for NiFe/FeMn films with Ta/ Cu bufferlayers is mainly caused by the Cu atoms segregation at the interface between NiFe and FeMn. 展开更多
关键词 NiFe/FeMn exchange bias field TEXTURE surface roughness SURFACESEGREGATION
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Influence of temperature on thermal relaxation of exchange bias field in CoFe/Cu/CoFe/IrMn spin valve
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作者 Xian-Jin Qi Ni-Na Yang +1 位作者 Xiao-Xu Duan Xue-Zhu Li 《Chinese Physics B》 SCIE EI CAS CSCD 2021年第10期554-559,共6页
A multilayered spin valve film with a structure of Ta(5 nm)/Co_(75)Fe_(25)(5 nm)/Cu(2.5 nm)/Co_(75)Fe_(25)(5 nm)/Ir_(20)Mn_(80)(12 nm)/Ta(8 nm)is prepared by the high-vacuum direct current(DC)magnetron sputtering.The ... A multilayered spin valve film with a structure of Ta(5 nm)/Co_(75)Fe_(25)(5 nm)/Cu(2.5 nm)/Co_(75)Fe_(25)(5 nm)/Ir_(20)Mn_(80)(12 nm)/Ta(8 nm)is prepared by the high-vacuum direct current(DC)magnetron sputtering.The effect of temperature on the spin valve structure and the magnetic properties are studied by x-ray diffraction(XRD),atomic force microscopy(AFM),and vibrating sample magnetometry.The effect of temperature on the exchange bias field thermomagnetic properties of multilayered spin valve is studied by the residence time of samples in a reverse saturation field.The results show that as the temperature increases,the IrMn(111)texture weakens,surface/interface roughness increases,and the exchange bias field decreases.Below 200℃,the exchange bias field decreases with the residence time increasing,and at the beginning of the negative saturation field,the exchange bias field Hex decreases first quickly and then slowly gradually.When the temperature is greater than 200℃,the exchange bias field is unchanged with the residence time increasing. 展开更多
关键词 exchange bias field spin valves TEMPERATURE thermal relaxation
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XPS Studies of Magnetic Multilayers 被引量:2
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作者 Guanghua Yu, Hongchen Zhao, Jiao Teng, Chunlin Chai, Fengwu Zhu, Yang Xia, Shumin Chai Material Science and Engineering School, University of Science and Technology Beijing, Beijing 100083, China Microelectronics Center, Chinese Academy of Science, Beijin 《Journal of University of Science and Technology Beijing》 CSCD 2001年第3期210-213,共4页
NiOx/Ni81Fe19 and Co/AlOx/Co magnetic multilayers were fabricated by reactive RF/DC magnetron sputtering on clean glass substrates and oxidized Si (100) substrates, respectively. The exchange biasing field (H-ex) betw... NiOx/Ni81Fe19 and Co/AlOx/Co magnetic multilayers were fabricated by reactive RF/DC magnetron sputtering on clean glass substrates and oxidized Si (100) substrates, respectively. The exchange biasing field (H-ex) between NiO4 and Ni81Fe19 as a function of NiOx oxidation states was studied by X-ray photoelectron spectroscopy (XPS). The oxidation states and the oxide thickness of Al layers in magnetic multilayer films consisting of Co/AlOx/Co were also analyzed. It is found that the H-sr of NiOx/Ni81Fe19 films only depends on Ni2+ but not on Ni3+ or Ni. The bottom Co can be completely covered by depositing an A I layer thicker than 2.0 nm. The oxide layer was Al2O3, and its thickness was 1.15 mn. 展开更多
关键词 NIOX exchange biasing field H-ex AlOx X-ray photoelectron spectroscopy (XPS)
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