A two-dimensional model of the silicon NPN monolithic composite transistor is established for the first time by utilizing the semiconductor device simulator, Sentaurus-TCAD. By analyzing the internal distributions of ...A two-dimensional model of the silicon NPN monolithic composite transistor is established for the first time by utilizing the semiconductor device simulator, Sentaurus-TCAD. By analyzing the internal distributions of electric field, current density, and temperature of the device, a detailed investigation on the damage process and mechanism induced by high-power microwaves （HPM） is performed. The results indicate that the temperature elevation occurs in the negative half-period and the temperature drop process is in the positive half-period under the HPM injection from the output port. The damage point is located near the edge of the base-emitter junction of T2, while with the input injection it exists between the base and the emitter of T2. Comparing these two kinds of injection, the input injection is more likely to damage the device than the output injection. The dependences of the damage energy threshold and the damage power threshold causing the device failure on the pulse-width are obtained, and the formulas obtained have the same form as the experimental equations, which demonstrates that more power is required to destroy the device if the pulse-width is shorter. Furthermore, the simulation result in this paper has a good coincidence with the experimental result.展开更多
We conduct a theoretical study of the damage susceptibility trend of a typical bipolar transistor induced by a high-power microwave （HPM） as a function of frequency. The dependences of the burnout time and the damag...We conduct a theoretical study of the damage susceptibility trend of a typical bipolar transistor induced by a high-power microwave （HPM） as a function of frequency. The dependences of the burnout time and the damage power on the signal frequency are obtained. Studies of the internal damage process and the mechanism of the device are carried out from the variation analysis of the distribution of the electric field, current density, and temperature. The investigation shows that the burnout time linearly depends on the signal frequency. The current density and the electric field at the damage position decrease with increasing frequency. Meanwhile, the temperature elevation occurs in the area between the p-n junction and the n n＋ interface due to the increase of the electric field. Adopting the data analysis software, the relationship between the damage power and frequency is obtained. Moreover, the thickness of the substrate has a significant effect on the burnout time.展开更多
In the present paper we study the influences of the bias voltage and the external components on the damage progress of a bipolar transistor induced by high-power microwaves. The mechanism is presented by analyzing the...In the present paper we study the influences of the bias voltage and the external components on the damage progress of a bipolar transistor induced by high-power microwaves. The mechanism is presented by analyzing the variation in the internal distribution of the temperature in the device. The findings show that the device becomes less vulnerable to damage with an increase in bias voltage. Both the series diode at the base and the relatively low series resistance at the emitter, Re, can obviously prolong the burnout time of the device. However, Re will aid damage to the device when the value is sufficiently high due to the fact that the highest hot spot shifts from the base-emitter junction to the base region. Moreover, the series resistance at the base Rb will weaken the capability of the device to withstand microwave damage.展开更多
偏磁控制技术是单级PFC双管正激变换器领域的关键问题之一,阐述偏磁产生的危害,分析偏磁现象在单级P F C双管正激变换器上产生的原因,提出一种合理和有效的偏磁控制电路方案,详述其工作过程和原理,制作一块单级P F C双管正激变换器测试...偏磁控制技术是单级PFC双管正激变换器领域的关键问题之一,阐述偏磁产生的危害,分析偏磁现象在单级P F C双管正激变换器上产生的原因,提出一种合理和有效的偏磁控制电路方案,详述其工作过程和原理,制作一块单级P F C双管正激变换器测试板,其间在主电路与偏磁控制电路设置了接通和断开的结点,并进行了对照实验,验证了其可行性和实效性。展开更多
In design and implementation of a boost converter,information on loss characteristics of switching devices and magnetic materials is a prerequisite,especially in high frequency applications.To gather such information,...In design and implementation of a boost converter,information on loss characteristics of switching devices and magnetic materials is a prerequisite,especially in high frequency applications.To gather such information,testing and accurate loss quantification is needed.Previous methods for measuring magnetic core loss are either only suitable for sinusoidal wave excitations or cannot separate winding loss from inductor loss.In addition,existing loss measurement approaches on the newly introduced GaN transistors are not satisfactory.In this paper,we present a new method to distinguish winding loss from inductor loss under practical excitations.This method utilizes a converter to generate the actual excitation waveforms and uses a calorimetric setup to quantify the losses.By splitting up the inductor in a converter into an air-core inductor and a magnetic-core inductor,both equipped with exactly the same winding structure,the air-core inductor loss can be used as the reference of the magnetic-core inductor winding loss.In this way,losses in the magnetic core can be determined in the actual operating condition of a converter in which the inductor is to be used.Moreover,a simple calorimetric approach for obtaining loss information of GaN transistors are is also presented.Both methods require simple setup and are easy and convenient to execute.The methods work well in assessing different high frequency magnetic core materials and measuring losses in GaN transistors at 1MHz.展开更多
文摘A two-dimensional model of the silicon NPN monolithic composite transistor is established for the first time by utilizing the semiconductor device simulator, Sentaurus-TCAD. By analyzing the internal distributions of electric field, current density, and temperature of the device, a detailed investigation on the damage process and mechanism induced by high-power microwaves （HPM） is performed. The results indicate that the temperature elevation occurs in the negative half-period and the temperature drop process is in the positive half-period under the HPM injection from the output port. The damage point is located near the edge of the base-emitter junction of T2, while with the input injection it exists between the base and the emitter of T2. Comparing these two kinds of injection, the input injection is more likely to damage the device than the output injection. The dependences of the damage energy threshold and the damage power threshold causing the device failure on the pulse-width are obtained, and the formulas obtained have the same form as the experimental equations, which demonstrates that more power is required to destroy the device if the pulse-width is shorter. Furthermore, the simulation result in this paper has a good coincidence with the experimental result.
基金Project supported by the National Natural Science Foundation of China (Grant No. 60776034)
文摘We conduct a theoretical study of the damage susceptibility trend of a typical bipolar transistor induced by a high-power microwave （HPM） as a function of frequency. The dependences of the burnout time and the damage power on the signal frequency are obtained. Studies of the internal damage process and the mechanism of the device are carried out from the variation analysis of the distribution of the electric field, current density, and temperature. The investigation shows that the burnout time linearly depends on the signal frequency. The current density and the electric field at the damage position decrease with increasing frequency. Meanwhile, the temperature elevation occurs in the area between the p-n junction and the n n＋ interface due to the increase of the electric field. Adopting the data analysis software, the relationship between the damage power and frequency is obtained. Moreover, the thickness of the substrate has a significant effect on the burnout time.
基金supported by the National Natural Science Foundation of China (Grant No. 60776034)
文摘In the present paper we study the influences of the bias voltage and the external components on the damage progress of a bipolar transistor induced by high-power microwaves. The mechanism is presented by analyzing the variation in the internal distribution of the temperature in the device. The findings show that the device becomes less vulnerable to damage with an increase in bias voltage. Both the series diode at the base and the relatively low series resistance at the emitter, Re, can obviously prolong the burnout time of the device. However, Re will aid damage to the device when the value is sufficiently high due to the fact that the highest hot spot shifts from the base-emitter junction to the base region. Moreover, the series resistance at the base Rb will weaken the capability of the device to withstand microwave damage.
文摘偏磁控制技术是单级PFC双管正激变换器领域的关键问题之一,阐述偏磁产生的危害,分析偏磁现象在单级P F C双管正激变换器上产生的原因,提出一种合理和有效的偏磁控制电路方案,详述其工作过程和原理,制作一块单级P F C双管正激变换器测试板,其间在主电路与偏磁控制电路设置了接通和断开的结点,并进行了对照实验,验证了其可行性和实效性。
文摘In design and implementation of a boost converter,information on loss characteristics of switching devices and magnetic materials is a prerequisite,especially in high frequency applications.To gather such information,testing and accurate loss quantification is needed.Previous methods for measuring magnetic core loss are either only suitable for sinusoidal wave excitations or cannot separate winding loss from inductor loss.In addition,existing loss measurement approaches on the newly introduced GaN transistors are not satisfactory.In this paper,we present a new method to distinguish winding loss from inductor loss under practical excitations.This method utilizes a converter to generate the actual excitation waveforms and uses a calorimetric setup to quantify the losses.By splitting up the inductor in a converter into an air-core inductor and a magnetic-core inductor,both equipped with exactly the same winding structure,the air-core inductor loss can be used as the reference of the magnetic-core inductor winding loss.In this way,losses in the magnetic core can be determined in the actual operating condition of a converter in which the inductor is to be used.Moreover,a simple calorimetric approach for obtaining loss information of GaN transistors are is also presented.Both methods require simple setup and are easy and convenient to execute.The methods work well in assessing different high frequency magnetic core materials and measuring losses in GaN transistors at 1MHz.
