Direct current（DC） and radio frequency（RF） performances of InP-based high electron mobility transistors（HEMTs）are investigated by Sentaurus TCAD. The physical models including hydrodynamic transport model, Shock...Direct current（DC） and radio frequency（RF） performances of InP-based high electron mobility transistors（HEMTs）are investigated by Sentaurus TCAD. The physical models including hydrodynamic transport model, Shockley–Read–Hall recombination, Auger recombination, radiative recombination, density gradient model and high field-dependent mobility are used to characterize the devices. The simulated results and measured results about DC and RF performances are compared, showing that they are well matched. However, the slight differences in channel current and pinch-off voltage may be accounted for by the surface defects resulting from oxidized InAlAs material in the gate-recess region. Moreover,the simulated frequency characteristics can be extrapolated beyond the test equipment limitation of 40 GHz, which gives a more accurate maximum oscillation frequency( f;) of 385 GHz.展开更多
In this manuscript we analyze a unique approach to improve the performance of the bipolar charge plasma transistor(BCPT) by introducing a strained Si/SiGe1-x layer as the active device region. For charge plasma realiz...In this manuscript we analyze a unique approach to improve the performance of the bipolar charge plasma transistor(BCPT) by introducing a strained Si/SiGe1-x layer as the active device region. For charge plasma realization different metal work-function electrodes are used to induce n+ and p+ regions on undoped strained silicon-on-insulator(sSOI or SiGe) to realize emitter, base, and collector regions of the BCPT. Here,by using a calibrated 2-D TCAD simulation the impact of a Si mole fraction x(in SiGe) on device performance metrics is investigated. The analysis demonstrates the band gap lowering with decreasing Si content or effective strain on the Si layer, and its subsequent advantages. This work reports a significant improvement in current gain, cutoff frequency, and lower collector breakdown voltage(BVCEO) for the proposed structure over the conventional device. The effect of varying temperature on the strained Si layer and its implications on the device performance is also investigated. The analysis demonstrates a fair device-level understanding and exhibits the immense potential of the SiGematerial as the device layer. In addition to this, using extensive 2-D mixed-mode TCAD simulation, a considerable improvement in switching transient times are also observed compared to its conventional counterpart.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.61404115 and 61434006)the Postdoctoral Science Foundation of Henan Province,China(Grant No.2014006)the Development Fund for Outstanding Young Teachers of Zhengzhou University(Grant No.1521317004)
文摘Direct current（DC） and radio frequency（RF） performances of InP-based high electron mobility transistors（HEMTs）are investigated by Sentaurus TCAD. The physical models including hydrodynamic transport model, Shockley–Read–Hall recombination, Auger recombination, radiative recombination, density gradient model and high field-dependent mobility are used to characterize the devices. The simulated results and measured results about DC and RF performances are compared, showing that they are well matched. However, the slight differences in channel current and pinch-off voltage may be accounted for by the surface defects resulting from oxidized InAlAs material in the gate-recess region. Moreover,the simulated frequency characteristics can be extrapolated beyond the test equipment limitation of 40 GHz, which gives a more accurate maximum oscillation frequency( f;) of 385 GHz.
文摘In this manuscript we analyze a unique approach to improve the performance of the bipolar charge plasma transistor(BCPT) by introducing a strained Si/SiGe1-x layer as the active device region. For charge plasma realization different metal work-function electrodes are used to induce n+ and p+ regions on undoped strained silicon-on-insulator(sSOI or SiGe) to realize emitter, base, and collector regions of the BCPT. Here,by using a calibrated 2-D TCAD simulation the impact of a Si mole fraction x(in SiGe) on device performance metrics is investigated. The analysis demonstrates the band gap lowering with decreasing Si content or effective strain on the Si layer, and its subsequent advantages. This work reports a significant improvement in current gain, cutoff frequency, and lower collector breakdown voltage(BVCEO) for the proposed structure over the conventional device. The effect of varying temperature on the strained Si layer and its implications on the device performance is also investigated. The analysis demonstrates a fair device-level understanding and exhibits the immense potential of the SiGematerial as the device layer. In addition to this, using extensive 2-D mixed-mode TCAD simulation, a considerable improvement in switching transient times are also observed compared to its conventional counterpart.
