BaTiO_(3)/p-GaN/Au self-driven UV photodetector with bipolar photocurrent controlled by ferroelectric polarization

Ferroelectric materials are promising candidates for ultraviolet photodetectors due to their ferroelectric effect.In this work,a BaTiO_(3)/p-GaN/Au hybrid heterojunction-Schottky self-driven ultraviolet photodetector was fabricated with excellent bipolar photoresponse property.At 0 V bias,the direction of the photocurrent can be switched by flipping the depolarization field of BaTiO_(3),which allows the performance of photodetectors to be controlled by the ferroelectric effect.Meanwhile,a relatively large responsivity and a fast response speed can be also observed.In particular,when the depolarization field of BaTiO_(3) is in the same direction of the built-in electric field of the Au/p-GaN Schottky junction(up polarized state),the photodetector exhibits a high responsivity of 18 mA/W at 360 nm,and a fast response speed of<40 ms at 0 V.These findings pave a new way for the preparation of high-performance photodetectors with bipolar photocurrents.

Enhancing BiVO_(4)photoanode performance by insertion of an epitaxial BiFeO_(3)ferroelectric layer

BiVO_(4)(BVO)is a promising material as the photoanode for use in photoelectrochemical applications.However,the high charge recombination and slow charge transfer of the BVO have been obstacles to achieving satisfactory photoelectrochemical performance.To address this,various modifications have been attempted,including the use of ferroelectric materials.Ferroelectric materials can form a permanent polarization within the layer,enhancing the separation and transport of photo-excited electron-hole pairs.In this study,we propose a novel approach by depositing an epitaxial BiFeO_(3)(BFO)thin film underneath the BVO thin film(BVO/BFO)to harness the ferroelectric property of BFO.The self-polarization of the inserted BFO thin film simultaneously functions as a buffer layer to enhance charge transport and a hole-blocking layer to reduce charge recombination.As a result,the BVO/BFO photoanodes showed more than 3.5 times higher photocurrent density(0.65 mA cm^(-2))at 1.23 V_(RHE)under the illumination compared to the bare BVO photoanodes(0.18 m A cm^(-2)),which is consistent with the increase of the applied bias photon-to-current conversion efficiencies(ABPE)and the result of electrochemical impedance spectroscopy(EIS)analysis.These results can be attributed to the self-polarization exhibited by the inserted BFO thin film,which promoted the charge separation and transfer efficiency of the BVO photoanodes.

Structure,ferroelectric,and enhanced fatigue properties of sol–gel-processed new Bi-based perovskite thin films of Bi(Cu_(1/2)Ti_(1/2))O_(3)–PbTiO_(3)

Bi-based perovskite ferroelectric thin films have wide applications in electronic devices due to their excellent ferroelectric properties.New Bi-based perovskite thin films Bi(Cu_(1/2)Ti_(1/2))O_(3)–PbTiO_(3)(BCT–PT) are deposited on Pt(111)/Ti/SiO_(2)/Si substrates in the present study by the traditional sol–gel method.Their structures and related ferroelectric and fatigue characteristics are studied in-depth.The BCT–PT thin films exhibit good crystallization within the phase-pure perovskite structure,besides,they have a predominant(100) orientation together with a dense and homogeneous microstructure.The remnant polarization(2P_(r)) values at 30 μC/cm^(2) and 16 μC/cm^(2) are observed in 0.1BCT–0.9PT and 0.2BCT–0.8PT thin films,respectively.More intriguingly,although the polarization values are not so high,0.2BCT–0.8PT thin films show outstanding polarization fatigue properties,with a high switchable polarization of 93.6% of the starting values after 10^(8) cycles,indicating promising applications in ferroelectric memories.

Hole-Doped Nonvolatile and Electrically Controllable Magnetism in van der Waals Ferroelectric Heterostructures

Electrical control of magnetism in van der Waals semiconductors is a promising step towards development of two-dimensional spintronic devices with ultralow power consumption for processing and storing information.Here, we propose a design for two-dimensional van der Waals heterostructures(vdWHs) that can host ferroelectricity and ferromagnetism simultaneously under hole doping. By contacting an In Se monolayer and forming an InSe/In_(2)Se_(3) vd WH, the switchable built-in electric field from the reversible out-of-plane polarization enables robust control of the band alignment. Furthermore, switching between the two ferroelectric states(P_↑ and P_↓)of hole-doped In_(2)Se_(3) with an external electric field can interchange the ON and OFF states of the nonvolatile magnetism. More interestingly, doping concentration and strain can effectively tune the magnetic moment and polarization energy. Therefore, this provides a platform for realizing multiferroics in ferroelectric heterostructures,showing great potential for use in nonvolatile memories and ferroelectric field-effect transistors.

Reliable ferroelectricity down to cryogenic temperature in wakeup free Hf_(0.5)Zr_(0.5)O_(2)thin films by thermal atomic layer deposition

The performance and reliability of ferroelectric thin films at temperatures around a few Kelvin are critical for their application in cryo-electronics.In this work,TiN/Hf_(0.5)Zr_(0.5)O_(2)/TiN capacitors that are free from the wake-up effect are investigated systematically from room temperature(300 K)to cryogenic temperature(30 K).We observe a consistent decrease in permittivity(εr)and a progressive increase in coercive electric field(Ec)as temperatures decrease.Our investigation reveals exceptional stability in the double remnant polarization(2P_(r))of our ferroelectric thin films across a wide temperature range.Specifically,at 30 K,a 2P_(r)of 36μC/cm^(2)under an applied electric field of 3.0 MV/cm is achieved.Moreover,we observed a reduced fatigue effect at 30 K in comparison to 300 K.The stable ferroelectric properties and endurance characteristics demonstrate the feasibility of utilizing HfO_(2)based ferroelectric thin films for cryo-electronics applications.

Charge trapping effect at the interface of ferroelectric/interlayer in the ferroelectric field effect transistor gate stack

We study the charge trapping phenomenon that restricts the endurance of n-type ferroelectric field-effect transistors(FeFETs)with metal/ferroelectric/interlayer/Si(MFIS)gate stack structure.In order to explore the physical mechanism of the endurance failure caused by the charge trapping effect,we first establish a model to simulate the electron trapping behavior in n-type Si FeFET.The model is based on the quantum mechanical electron tunneling theory.And then,we use the pulsed I_d-V_g method to measure the threshold voltage shift between the rising edges and falling edges of the FeFET.Our model fits the experimental data well.By fitting the model with the experimental data,we get the following conclusions.(i)During the positive operation pulse,electrons in the Si substrate are mainly trapped at the interface between the ferroelectric(FE)layer and interlayer(IL)of the FeFET gate stack by inelastic trap-assisted tunneling.(ii)Based on our model,we can get the number of electrons trapped into the gate stack during the positive operation pulse.(iii)The model can be used to evaluate trap parameters,which will help us to further understand the fatigue mechanism of FeFET.

Modulated optical and ferroelectric properties in a lateral structured ferroelectric/semiconductor van der Waals heterojunction

Modulation between optical and ferroelectric properties was realized in a lateral structured ferroelectric CuInP_(2)S_(6)(CIPS)/semiconductor MoS_(2) van der Waals heterojunction.The ferroelectric hysteresis loop area was modulated by the optical field.Two types of photodetection properties can be realized in a device by changing the ON and OFF states of the ferroelectric layer.The device was used as a photodetector in the OFF state but not in the ON state.The higher tunnelling electroresistance(~1.4×10^(4))in a lateral structured ferroelectric tunnelling junction was crucial,and it was analyzed and modulated by the barrier height and width of the ferroelectric CIPS/semiconductor MoS_(2) Schottky junction.The new parameter of the ferroelectric hysteresis loop area as a function of light intensity was introduced to analyze the relationship between the ferroelectric and photodetection properties.The proposed device has potential application as an optoelectronic sensory cell in the biological nervous system or as a new type of photodetector.

Large Energy Capacitive High-Entropy Lead-Free Ferroelectrics

Advanced lead-free energy storage ceramics play an indispensable role in next-generation pulse power capacitors market.Here,an ultrahigh energy storage density of~13.8 J cm^(-3)and a large efficiency of~82.4%are achieved in high-entropy lead-free relaxor ferroelectrics by increasing configuration entropy,named high-entropy strategy,realizing nearly ten times growth of energy storage density compared with low-entropy material.Evolution of energy storage performance and domain structure with increasing configuration entropy is systematically revealed for the first time.The achievement of excellent energy storage properties should be attributed to the enhanced random field,decreased nanodomain size,strong multiple local distortions,and improved breakdown field.Furthermore,the excellent frequency and fatigue stability as well as charge/discharge properties with superior thermal stability are also realized.The significantly enhanced comprehensive energy storage performance by increasing configuration entropy demonstrates that high entropy is an effective but convenient strategy to design new high-performance dielectrics,promoting the development of advanced capacitors.

Synergically enhanced piezocatalysis performance of eco-friendly(K_(0.52)Na_(0.48))NbO_(3) through ferroelectric polarization and defects

Piezocatalysis has attracted unprecedented research interest as a newly emerging catalysis technology.However,the inherent insulating property of ferroelectric materials ultimately leads to the poor vibration-electricity conversion ability.Herein,this work reports the(K_(0.52)Na_(0.48))NbO_(3) ferroelectric ceramics(KNNFCx),for which the FeCo modification strategy is proposed.The substitution of the moderate amount of FeCo(x=0.015)at Nb site not only optimizes ferroelectricity but also produces beneficial defects,notably increasing Rhodamine B water purification efficiency to 95%.The pinning effect of monovalent oxygen vacancies on ferroelectric domains is responsible for the excellent ferroelectric polarization of KNNFC0.015 through the generation of an internal field to promote charge carriers separation and reduce nonradiative recombination.Importantly,the accompanying electron carriers can easily move to the material surface and participate in redox reactions because they have low activation energy.Therefore,ferroelectric polarization and defects play synergetic roles in enhancing piezocatalytic performance.

Ultraviolet photodetectors based on ferroelectric depolarization field

Ultraviolet(UV)photodetectors are extensively adopted in the fields of the Internet of Things,optical communications and imaging.Nowadays,with broadening the application scope of UV photodetectors,developing integrated devices with more functionalities rather than basic photo-detecting ability are highly required and have been triggered ever-growing interest in scientific and industrial communities.Ferroelectric thin films have become a potential candidate in the field of UV detection due to their wide bandgap and unique photovoltaic characteristics.Additionally,ferroelectric thin films perform excellent dielectric,piezoelectric,pyroelectric,acousto-optic effects,etc.,which can satisfy the demand for the diversified development of UV detectors.In this review,according to the different roles of ferroelectric thin films in the device,the UV photodetectors based on ferroelectric films are classified into ferroelectric depolarization field driven type,ferroelectric depolarization field and built-in electric field co-driven type,and ferroelectric field enhanced type.These three types of ferroelectric UV photodetectors have great potential and are expected to promote the development of a new generation of UV detection technology.At the end of the paper,the advantages and challenges of three types of ferroelectric UV photodetectors are summarized,and the possible development direction in the future is proposed.

Correlating the Interfacial Polar-Phase Structure to the Local Chemistry in Ferroelectric Polymer Nanocomposites by Combined Scanning Probe Microscopy

Ferroelectric polymer nanocomposites possess exceptional electric properties with respect to the two otherwise uniform phases,which is commonly attributed to the critical role of the matrix-particle interfacial region.However,the structure-property correlation of the interface remains unestablished,and thus,the design of ferroelectric polymer nanocompos-ite has largely relied on the trial-and-error method.Here,a strategy that combines multi-mode scanning probe microscopy-based electrical charac-terization and nano-infrared spectroscopy is developed to unveil the local structure-property correlation of the interface in ferroelectric polymer nano-composites.The results show that the type of surface modifiers decorated on the nanoparticles can significantly influence the local polar-phase content and the piezoelectric effect of the polymer matrix surrounding the nano-particles.The strongly coupled polar-phase content and piezoelectric effect measured directly in the interfacial region as well as the computed bonding energy suggest that the property enhancement originates from the formation of hydrogen bond between the surface modifiers and the ferroelectric polymer.It is also directly detected that the local domain size of the ferroelectric polymer can impact the energy level and distribution of charge traps in the interfacial region and eventually influence the local dielectric strength.

Tensile stress regulated microstructures and ferroelectric properties of Hf_(0.5)Zr_(0.5)O_(2) films

The discovery of ferroelectricity in HfO_(2) based materials reactivated the research on ferroelectric memory.However,the complete mechanism underlying its ferroelectricity remains to be fully elucidated.In this study,we conducted a systematic study on the microstructures and ferroelectric properties of Hf_(0.5)Zr_(0.5)O_(2)(HZO)thin films with various annealing rates in the rapid thermal annealing.It was observed that the HZO thin films with higher annealing rates demonstrate smaller grain size,reduced surface roughness and a higher portion of orthorhombic phase.Moreover,these films exhibited enhanced polarization values and better fatigue cycles compared to those treated with lower annealing rates.The grazing incidence x-ray diffraction measurements revealed the existence of tension stress in the HZO thin films,which was weakened with decreasing annealing rate.Our findings revealed that this internal stress,along with the stress originating from the top/bottom electrode,plays a crucial role in modulating the microstructure and ferroelectric properties of the HZO thin films.By carefully controlling the annealing rate,we could effectively regulate the tension stress within HZO thin films,thus achieving precise control over their ferroelectric properties.This work established a valuable pathway for tailoring the performance of HZO thin films for various applications.

Strain engineering and hydrogen effect for two-dimensional ferroelectricity in monolayer group-Ⅳmonochalcogenides MX(M=Sn,Ge;X=Se,Te,S)

Two-dimensional(2D)ferroelectric compounds are a special class of materials that meet the need for devices miniaturization,which can lead to a wide range of applications.Here,we investigate ferroelectric properties of monolayer group-IV monochalcogenides MX(M=Sn,Ge;X=Se,Te,S)via strain engineering,and their effects with contaminated hydrogen are also discussed.GeSe,GeTe,and GeS do not go through transition up to the compressive strain of-5%,and consequently have good ferroelectric parameters for device applications that can be further improved by applying strain.According to the calculated ferroelectric properties and the band gaps of these materials,we find that their band gap can be adjusted by strain for excellent photovoltaic applications.In addition,we have determined the most stable hydrogen occupancy location in the monolayer SnS and SnTe.It reveals that H prefers to absorb on SnS and SnTe monolayers as molecules rather than atomic H.As a result,hydrogen molecules have little effect on the polarization and electronic structure of monolayer SnTe and SnS.

Ferroelectricity and Large Rashba Splitting in Two-Dimensional Tellurium

Two-dimensional(2D)ferroelectric(FE)systems are promising candidates for non-volatile nanodevices.Previous studies mainly focused on 2D compounds.Though counter-intuitive,here we propose several new phases of tellurium with(anti)ferroelectricity.Two-dimensional films can be viewed as a collection of one-dimensional chains,and lone-pair instability is responsible for the(anti)ferroelectricity.The total polarization is determined to be 0.34×10^(-10)C/m for the FE ground state.Due to the local polarization field in the FE film,we show a large Rashba splitting(α_(R)~2 eV·?)with nonzero spin Hall conductivity for experimental detection.Furthermore,a dipole-like distribution of Berry curvature is verified,which may facilitate a nonlinear Hall effect.Because Rashba-splitting/Berry-curvature distributions are fully coupled with a polarization field,they can be reversed through FE phase transition.Our results not only broaden the elemental FE materials,but also shed light on their intriguing transport phenomena.

Competition between Stepwise Polarization Switching and Chirality Coupling in Ferroelectric GeS Nanotubes

Ferroelectricity of group-Ⅳ chalcogenides MX(M = Ge,Sn;X = Se,S) monolayers has been extensively investigated.However,how the ferroelectricity evolves in their one-dimensional nanotubes remains largely unclear.Employing an accurate deep-learning interatomic potential of first-principles precision,we uncover a general stepwise mechanism for polarization switching in zigzag and chiral Ge S nanotubes,which has an energy barrier that is substantially lower than the one associated with the conventional one-step switching mechanism.The switching barrier(per atom) gradually decreases with increasing the number of intermediate steps and converges to a value that is almost independent of the tube diameter.In the chiral Ge S nanotubes,the switching path of polarization with chirality coupling is preferred at less intermediate steps.This study unveils novel ferroelectric switching behaviors in one-dimensional nanotubes,which is critical to coupling ferroelectricity and chirality.

A Ferroelectric Domain-Wall Transistor

On the basis of novel properties of ferroelectric conducting domain walls,the domain wall nanoelectronics emerges and provides a brand-new dimension for the development of high-density,high-speed and energy-efficient nanodevices.For in-memory computing,three-terminal devices with both logic and memory functions such as transistors purely based on ferroelectric domain walls are urgently required.Here,a prototype ferroelectric domain-wall transistor with a well-designed coplanar electrode geometry is demonstrated on epitaxial Bi Fe O_(3)thin films.For the logic function,the current switching between on/off states of the transistor depends on the creation or elimination of conducting domain walls between drain and source electrodes.For the data storage,the transistor can maintain nonvolatile on/off states after the write/erase operations,providing an innovative approach for the development of the domain wall nanoelectronics.

Surface Ferron Excitations in Ferroelectrics and Their Directional Routing

The duality between electric and magnetic dipoles inspires recent comparisons between ferronics and magnonics.Here we predict surface polarization waves or“ferrons”in ferroelectric insulators,taking the long-range dipolar interaction into account.We predict properties that are strikingly different from the magnetic counterpart,i.e.the surface Damon-Eshbach magnons in ferromagnets.The dipolar interaction pushes the ferron branch with locked circular polarization and momentum to the ionic plasma frequency.The low-frequency modes are on the other hand in-plane polarized normal to their wave vectors.The strong anisotropy of the lower branch renders directional emissions of electric polarization and chiral near fields when activated by a focused laser beam,allowing optical routing in ferroelectric devices.

Ferroelectric domain wall memory

Ferroelectric domain walls appear as sub-nanometer-thick topological interfaces separating two adjacent domains in different orientations,and can be repetitively created,erased,and moved during programming into different logic states for the nonvolatile memory under an applied electric field,providing a new paradigm for highly miniaturized low-energy electronic devices.Under some specific conditions,the charged domain walls are conducting,differing from their insulating bulk domains.In the past decade,the emergence of atomic-layer scaling solid-state electronic devices is such demonstration,resulting in the rapid rise of domain wall nano-electronics.This review aims to the latest development of ferroelectric domain-wall memories with the presence of the challenges and opportunities and the roadmap to their future commercialization.

Coupled Ferroelectricity and Correlated States in a Twisted Quadrilayer MoS_(2) Moiré Superlattice

Moiré superlattices have emerged as a highly controllable quantum platform for exploration of various fascinating phenomena,such as Mott insulator states,ferroelectric order,unconventional superconductivity and orbital ferromagnetism.Although remarkable progress has been achieved,current research in moiré physics has mainly focused on the single species properties,while the coupling between distinct moiré quantum phenomena remains elusive.Here we demonstrate,for the first time,the strong coupling between ferroelectricity and correlated states in a twisted quadrilayer MoS2moiré superlattice,where the twist angles are controlled in sequence to be ~57°,~0°,and ~-57°.Correlated insulator states are unambiguously established at moiré band filling factors v = 1,2,3 of twisted quadrilayer MoS_(2).Remarkably,ferroelectric order can occur at correlated insulator states and disappears quickly as the moiré band filling deviates from the integer fillings,providing smoking gun evidences of the coupling between ferroelectricity and correlated states.Our results demonstrate the coupling between different moiré quantum properties and will hold great promise for new moiré physics and applications.

Ferroelectricity of pristine Hf_(0.5)Zr_(0.5)O_(2) films fabricated by atomic layer deposition

Hafnium-based ferroelectric films,remaining their ferroelectricity down to nanoscale thickness,present a promising application for low-power logic devices and nonvolatile memories.It has been appealing for researchers to reduce the required temperature to obtain the ferroelectric phase in hafnium-based ferroelectric films for applications such as flexible and wearable electronics.This work demonstrates that a remanent polarization(P_(r))value of>5μC/cm^(2)can be obtained in asdeposited Hf_(0.5)Zr_(0.5)O_(2)(HZO)films that are fabricated by thermal atomic layer deposition(TALD)under low temperature of 250℃.The ferroelectric orthorhombic phase(o-phase)in the as-deposited HZO films is detected by scanning transmission electron microscopy(STEM).This low fabrication temperature further extends the compatibility of ferroelectric HZO films to flexible electronics and avoids the cost imposed by following high-temperature annealing treatments.