BiFeO_(3),a room-temperature multiferroic material,has recently been increasingly applied as a potential lead-free piezoelectric material due to its large piezoelectricity achieved by doping.In this work,12%Smdoped Bi...BiFeO_(3),a room-temperature multiferroic material,has recently been increasingly applied as a potential lead-free piezoelectric material due to its large piezoelectricity achieved by doping.In this work,12%Smdoped BiFeO_(3)epitaxial thin films were fabricated on Nb-doped SrTiO_(3)(001)single crystal substrates via sol-gel method.The epitaxy was verified by reciprocal space mapping(RSM)and transmission electron microscope(TEM).The TEM results indicated the coexistence of R3c and Pbam phases in the film.The domains and piezoelectric properties from room temperature to 200℃were characterized by piezoresponse force microscopy(PFM).Domains became active from 110℃to 170℃,and domain configurations changed obviously.A partially fading piezoresponse indicated the emergence of antiferroelectric Pbam.The in-situ domain analysis suggested that the phase transition was accompanied by domain wall motion.Switching spectroscopy PFM(SS-PFM)was further conducted to investigate the piezoresponse during the phase transition.Anomalous responses were found in both ON and OFF states at 170℃,and the film exhibits typical antiferroelectric behavior at 200℃,implying that the completion of phase transition and structure turned to the Pbam phase.This work revealed the origin of the high piezoresponse of Sm-doped BiFeO_(3)thin films at the morphotropic phase boundary(MPB).展开更多
Received 26 June 2014;Revised 13 October 2014;Accepted 20 October 2014;Published 12 November 2014 Inhomogeneous states caused by the coexistence of the ferroelectric(FE)and antiferroelectric(AFE)phases in lead–zircon...Received 26 June 2014;Revised 13 October 2014;Accepted 20 October 2014;Published 12 November 2014 Inhomogeneous states caused by the coexistence of the ferroelectric(FE)and antiferroelectric(AFE)phases in lead–zirconate–titanate based solid solutions have been investigated.It has been found that the domains of the FE and AFE phases with sizes of the order of 20 nm to 30 nm coexist in the bulk of the samples due to a small difference in the free energies of these phases.The coherent character of the interphase boundaries(IPBs)leads to the concentration of the elastic stresses along these boundaries.These elastic stresses cause the local decomposition of the solid solution and formation of segregates near the IPBS due to the condition that equivalent positions of the crystal lattice are occupied by the ions with different sizes.The sizes of the segregates formed in this way are of the order 8 nm to 15 nm.Some physical effects caused by the presence of these segregate nanostructures are analyzed and discussed.展开更多
基金This work was supported by the National Nature Science Foundation of China(Grants no.51332002,11374174,51390471,51527803 and 51221291)the Ministry of Science and Technology of China under Grant 2015CB654605,National 973 Project of China(2015CB654902)+1 种基金National key research and development program(2016YFB0700402)This work made use of the resources of the National Center for Electron Microscopy in Beijing and the BL14B1 beamline of the Shanghai Synchrotron Radiation Facility under project no.14SRBL14B10499.
文摘BiFeO_(3),a room-temperature multiferroic material,has recently been increasingly applied as a potential lead-free piezoelectric material due to its large piezoelectricity achieved by doping.In this work,12%Smdoped BiFeO_(3)epitaxial thin films were fabricated on Nb-doped SrTiO_(3)(001)single crystal substrates via sol-gel method.The epitaxy was verified by reciprocal space mapping(RSM)and transmission electron microscope(TEM).The TEM results indicated the coexistence of R3c and Pbam phases in the film.The domains and piezoelectric properties from room temperature to 200℃were characterized by piezoresponse force microscopy(PFM).Domains became active from 110℃to 170℃,and domain configurations changed obviously.A partially fading piezoresponse indicated the emergence of antiferroelectric Pbam.The in-situ domain analysis suggested that the phase transition was accompanied by domain wall motion.Switching spectroscopy PFM(SS-PFM)was further conducted to investigate the piezoresponse during the phase transition.Anomalous responses were found in both ON and OFF states at 170℃,and the film exhibits typical antiferroelectric behavior at 200℃,implying that the completion of phase transition and structure turned to the Pbam phase.This work revealed the origin of the high piezoresponse of Sm-doped BiFeO_(3)thin films at the morphotropic phase boundary(MPB).
文摘Received 26 June 2014;Revised 13 October 2014;Accepted 20 October 2014;Published 12 November 2014 Inhomogeneous states caused by the coexistence of the ferroelectric(FE)and antiferroelectric(AFE)phases in lead–zirconate–titanate based solid solutions have been investigated.It has been found that the domains of the FE and AFE phases with sizes of the order of 20 nm to 30 nm coexist in the bulk of the samples due to a small difference in the free energies of these phases.The coherent character of the interphase boundaries(IPBs)leads to the concentration of the elastic stresses along these boundaries.These elastic stresses cause the local decomposition of the solid solution and formation of segregates near the IPBS due to the condition that equivalent positions of the crystal lattice are occupied by the ions with different sizes.The sizes of the segregates formed in this way are of the order 8 nm to 15 nm.Some physical effects caused by the presence of these segregate nanostructures are analyzed and discussed.
