Progress of novel diluted ferromagnetic semiconductors with decoupled spin and charge doping: Counterparts of Fe-based superconductors

Diluted ferromagnetic semiconductors（DMSs） that combine the properties of semiconductors with ferromagnetism have potential application in spin-sensitive electronic（spintronic） devices. The search for DMS materials exploded after the observation of ferromagnetic ordering in Ⅲ-Ⅴ（Ga,Mn）As films. Recently, a series of DMS compounds isostructural to iron-based superconductors have been reported. Among them, the highest Curie temperature TCo f 230 K has been achieved in（Ba,K）（Zn,Mn）2As2. However, most DMSs, including（Ga,Mn）As, are p-type, i.e., the carriers that mediate the ferromagnetism are holes. For practical applications, DMSs with n-type carriers are also advantageous. Very recently,a new DMS Ba（Zn,Co）2As2 with n-type carriers has been synthesized. Here we summarize the recent progress on this research stream. We will show that the homogeneous ferromagnetism in these bulk form DMSs has been confirmed by microscopic techniques, i.e., nuclear magnetic resonance（NMR） and muon spin rotation（μSR）.

Universal spin-dependent variable range hopping in wide-band-gap oxide ferromagnetic semiconductors

This paper proposes a universal spin-dependent variable range hopping theoretical model to describe various experimental transport phenomena observed in wide-band-gap oxide ferromagnetic semiconductors with high transition metal concentration. The contributions of the ＇hard gap＇ energy, Coulomb interaction, correlation energy, and exchange interaction to the electrical transport are considered in the universal variable range hopping theoretical model. By fitting the temperature and magnetic field dependence of the experimental sheet resistance to the theoretical model, the spin polarization ratio of electrical carriers near the Fermi level and interactions between electrical carriers can be obtained.

Colossal negative magnetoresistance from hopping in insulating ferromagnetic semiconductors

Ferromagnetic semiconductor Ga_(1–x)Mn_(x)As_(1–y)P_(y) thin films go through a metal–insulator transition at low temperature where electrical conduction becomes driven by hopping of charge carriers.In this regime,we report a colossal negative magnetoresistance(CNMR)coexisting with a saturated magnetic moment,unlike in the traditional magnetic semiconductor Ga_(1–x)Mn_(x)As.By analyzing the temperature dependence of the resistivity at fixed magnetic field,we demonstrate that the CNMR can be consistently described by the field dependence of the localization length,which relates to a field dependent mobility edge.This dependence is likely due to the random environment of Mn atoms in Ga_(1-x)Mn_(x)As_(1-y)P_(y) which causes a random spatial distribution of the mobility that is suppressed by an increasing magnetic field.

Magnetic two-dimensional layered crystals meet with ferromagnetic semiconductors

The existence of intrinsic ferromagnetic semiconductors(FMSs)in twodimensional(2D)materials has been a long-term concern and pursuit.Recent breakthroughs in the 2D FMSs,such as CrGeTe3 and CrX3(X=Cl,Br,I)from bulk down to monolayer,have stimulated intensive researches on new physical phenomena and creative concepts.This minireview mainly summarizes recent progress of 2D intrinsic FMSs in theoretical side,and focuses on the ongoing strategies proposed to enhance ferromagnetism,involving the mechanisms of magnetic exchange interaction and the significance of magnetic anisotropy.Meanwhile,spin-related multifunctionality with ultrathin FMSs and their van de Waals heterostructures in magnetoelectric,valleytronic,and nondissipative electronic technology are introduced,as well as the current challenges and the prospects in this field are discussed.

Li_(2)NiSe_(2):A new-type intrinsic two-dimensional ferromagnetic semiconductor above 200 K

By using first-principles electronic structure calculations,we propose a two-dimensional ferromagnetic semiconductor Li_(2)NiSe_(2)with a Curie temperature above 200 K.The structure of monolayer Li_(2)NiSe_(2)is dynamically stable,which is derived from the synthesized prototype compound Li_(2)Ni O_(2)and can be denoted as Li-decorated 1T-type NiSe_(2).The Ni–Se–Ni ferromagnetic superexchange dominates the magnetic couplings between the Ni atoms,which can be understood in the frame of the Goodenough–Kanamori–Anderson(GKA)rules.Our systematic study of monolayer Li_(2)NiSe_(2)enables its promising applications in spintronics and suggests a new choice to design two-dimensional ferromagnetic semiconductors.

Synchrotron X-Ray Diffraction Studies on the New Generation Ferromagnetic Semiconductor Li(Zn,Mn)As under High Pressure

The pressure effect on the crystalline structure of the I-II- V semiconductor Li（Zn,Mn）As ferromagnet is studied using in situ high-pressure x-ray diffraction and diamond anvil cell techniques. A phase transition starting at -11.6GPa is found. The space group of the high-pressure new phase is proposed as Pmca. Fitting with the Birch-Murnaghan equation of state, the bulk modulus B0 and its pressure derivative B0 of the ambient pressure structure with space group of F43m are B0 = 75.4 GPa and B0 = 4.3, respectively.

Spin Injection from Ferromagnetic Semiconductor CoZnO into ZnO

2x （FeNi/CoZnO）/ZnO/（CoZnO/Co） x2 spin-inJection devices were prepared by sputtering and photo-lithography. In the devices, two composite magnetic layers 2x（FeNi/CoZnO） and （CoZnO/Co）x2 with different coercivities were used to fabricate the ZnO-based semiconductor spin valve. Since the CoZnO ferromagnetic semiconductor layers touched the ZnO space layer directly, the significant spin injection from CoZnO into ZnO was observed by measuring the magnetoresistance of the spin-injection devices. The magnetoresistance reduced linearly with increasing temperature, from 1.12% at 90 K to 0.35% at room temperature.

Current spin polarization and spin injection efficiency in ZnO-based ferromagnetic semiconductor junctions

[FeNi（3 nm）/Zn1-xCoxO（3 nm）]2/ZnO（d nm）/[Zn1-xCoxO（3 nm）/Co（3 nm）]2 （d=3 and 10） semiconductor junctions were prepared by magnetron sputtering system and photolithography. The spin valve effect was observed in these junctions because the utility of the ferromagnetic composite layers acted as soft and hard magnetic layers. The electrical detection was performed by measuring the magnetoresistance of these junctions to investigate the current spin polarization asc in the ZnO layer and the spin injection efficiency η of spin-polarized electrons. asc was reduced from 11.7% （and 10.5%） at 90 K to 7.31% （and 5.93%） at room temperature for d=3 （and d=10）. And η was reduced from 39.5% （and 35.5%） at 90 K to 24.7% （and 20.0%） at room temperature for d=3 （and d=10）.

Characterization of sputtering CoFe-ITO junction for spin injection

The combination of ferromagnetic metal(FM)and semiconductor(SC)for spin injection was studied and demonstrated with FM-SC-FM junction.The semiconductor was chosen to be doped Indium-Tin-Oxide(ITO).Both ITO single-layer film and CoFe-ITO-CoFe junction were sputtering deposited.The ITO single-layer film was n-type with a small resistance of about 100Ω/Square.I-V curves and Magnetoresistance(MR)effect of the CoFe-ITO-CoFe junction were measured at room temperature and 77 K.Results show that the CoFe forms an ohmic contact to ITO film.But at low temperature,the I-V curves show a Schottky-like characteristic,which is strongly affect by applied magnetic field.The MR effect was measured to be 1%at 77 K,which indicates a spin injection into semiconductor to be realized in this sandwich junction.

The influence of the Dresselhaus spin-orbit coupling on the tunnelling magnetoresistance in ferromagnet/ insulator /semiconductor/ insulator /ferromagnet tunnel junctions

This paper investigates the effect of Dresselhaus spin orbit coupling on the spin-transport properties of ferromagnet/insulator/semiconductor/insulator/ferromagnet double-barrier structures. The influence of the thickness of the insulator between the ferromagnet and the semiconductor on the polarization is also considered. The obtained results indicate that （i） the polarization can be enhanced by reducing the insulator layers at zero temperature, and （ii） the tunnelling magnetoresistance inversion can be illustrated by the influence of the Dresselhaus spin-orbit coupling effect in the double-barrier structure. Due to the Dresselhaus spin-orbit coupling effect, the tunnelling magnetoresistance inversion occurs when the energy of a localized state in the barrier matches the Fermi energy EF of the ferromagnetic electrodes.

Preliminary Study on the Magnetic Properties of GeMn Nanocolumn/Ge Multilayers

Ge0.94Mn0.06 nanocolumn thin film is a unique phase of GeMn diluted magnetic semiconductors (DMS) which exhibit Curie temperature (TC) > 400 K. The multilayers of Ge0.94Mn0.06 nanocolumns separated by nano-scaled spacers represent great interests for spintronic applications, such as spin valves or giant magneto-resistance (GMR) multilayers. In this article, we present the results obtained from the preliminary study on the exchange coupling in two types of GeMn nanocolumn/Ge multilayers. All the samples have been grown using molecular beam epitaxy (MBE). The superconducting quantum interference device (SQUID) magnetometer has been used to determine the magnetic properties of the samples. In the multilayer system Ge/[Ge0.94Mn0.06(40 nm)/Ge(d nm)]9/Ge0.94Mn0.06(40 nm)/Ge, no exchange coupling can be observed. Inversely, exchange coupling between the layers exists and depends on the thickness of the Ge spacers for the GeMn nanocolumns/Ge multilayer spin valve systems. The exchange coupling in the nanocolumns multilayer systems has been shown to be complex due to the leakage field induced by neighboring nanocolumns and the magnetic anisotropy of nanocolumns.

Room-temperature ferromagnetism observed in Nd-doped In_2O_3 dilute magnetic semiconducting nanowires

Nd-doped In_2O_3 nanowires were fabricated by an Au-catalyzed chemical vapor deposition method.Nd atoms were successfully doped into the In_2O_3 host lattice structure,as revealed by energy dispersive x-ray spectroscopy,x-ray photoelectron spectroscopy,Raman spectroscopy,and x-ray diffraction.Robust room temperature ferromagnetism was observed in Nd-doped In_2O_3 nanowires,which was attributed to the long-range-mediated magnetization among Nd^（3＋）-vacancy complexes through percolation-bound magnetic polarons.

Spray Pypolysed Thin Film Transparent Ferromagnetic Sdmiconductors for Spintronics

1 Results Inducing order in spin degree of freedomof charge carriers in conventional semiconductors and gettingroomtemperature ferromagnetism(RTFM) is an ongoing challenge in realizing spintronic devices .

The melilite-type compound (Sr_(1-x),A_x)_2MnGe_2S_6O(A=K,La) being a room temperature ferromagnetic semiconductor

The seeking of room temperature ferromagnetic semiconductors, which take advantages of both the charge and spin degrees of freedom of electrons to realize a variety of functionalities in devices integrated with electronic, optical, and magnetic storage properties, has been a long-term goal of scientists and engi- neers. Here, by using the spin-polarized density functional theory calculations, we predict a new series of high temperature ferromagnetic semiconductors based on the melilite-type oxysulfide Sr2MnGe2S60 through hole （K） and electron （La） doping. Due to the lack of strong antiferromagnetic superexchange between Mn ions, the weak antiferromagnetic order in the parent compound Sr2MnGe2S60 can be sup- pressed easily by charge doping with either p-type magnetic order. At a doping concentration of or n-type carriers, giving rise to the expected ferro- 25%, both the hole-doped and electron-doped compounds can achieve a Curie temperature （To） above 300 K. The underlying mechanism is analyzed. Our study provides an effective approach for exploring new types of high temperature ferromagnetic semiconductors.

Atomic scale electronic structure of the ferromagnetic semiconductor Cr2Ge2Te6

Cr_2Ge_2Te_6is an intrinsic ferromagnetic semiconductor with van der Waals type layered structure,thus represents a promising material for novel electronic and spintronic devices.Here we combine scanning tunneling microscopy and first-principles calculations to investigate the electronic structure of Cr_2Ge_2Te_6.Tunneling spectroscopy reveals a surprising large energy level shift and change of energy gap size across the ferromagnetic to paramagnetic phase transition,as well as a peculiar double-peak electronic state on the Cr-site defect.These features can be quantitatively explained by density functional theory calculations,which uncover a close relationship between the electronic structure and magnetic order.These findings shed important new lights on the microscopic electronic structure and origin of magnetic order in Cr_2Ge_2Te_6.

Monolayer puckered pentagonal VTe_(2):An emergent two-dimensional ferromagnetic semiconductor with multiferroic coupling

Two-dimensional(2D)magnetic crystals have been extensively explored thanks to their potential applications in spintronics,valleytronics,and topological superconductivity.Here we report a novel monolayer magnet,namely puckered pentagonal VTe_(2)(PP-VTe_(2)),intriguing atomic and electronic structures of which were firmly validated from first-principles calculations.The PP-VTe_(2) exhibits strong intrinsic ferromagnetism and semiconducting property distinct from the half-metallic bulk pyrite VTe_(2)(BP-VTe_(2))phase.An unusual magnetic anisotropy with large magnetic exchange energies is found.More interestingly,the multiferroic coupling between its 2D ferroelasticity and in-plane magnetization is further identified in PP-VTe_(2),lending it unprecedented controllability with external strains and electric fields.Serving as an emergent 2D ferromagnetic semiconductor with a novel crystal structure,monolayer PP-VTe_(2) provides an ideal platform for exploring exotic crystalline and spin configurations in low-dimensional systems.

Coexistence of large positive and negative magnetoresistance in Cr_(2)Si_(2)Te_(6) ferromagnetic semiconductor

Magnetoresistance(MR)phenomenon couples the electron transport with magnetic field,which has been at the forefront of condensed matter physics and materials science.Large-MR behaviors are of particularly importance for magnetic sensor and information memory applications,and their scarcity has aroused intensive research.Moreover,due to the different physical origins,combination of large positive and negative MR(pMR and nMR)in one single compound has rarely been reported.In present work,we achieved a coexistence of large pMR and nMR in Cr_(2)Si_(2)Te_(6) ferromagnetic semiconductor single crystal with different field configurations.Specifically,a large nMR of about -60% was obtained under the in-plane field,while a large pMR higher than 1000% took over in the out-of-plane direction.We attribute this field direction-sensitive dualistic large MR behavior to the competition and cooperation effect from the ferromagnetic interaction,orbital scattering and electronic correlation that coexist in Cr_(2)Si_(2)Te_(6),which contribute to n MR,pMR,and nMR,respectively,in dominated temperature and field ranges,and show different weights under different field directions.The elucidated multiple MR mechanism in this ferromagnetic semiconductor will shed light on the pursuit of coexistence of large p MR and nMR for field-sensitive device applications.

Giant magnetoresistance:history,development and beyond

With the discovery of giant magnetoresistance(GMR),research effort has been made to exploiting the influence of spins on the mobility of electrons in ferromagnetic materials and/or artificial structures,which has lead to the idea of spintronics.A brief introduction is given to GMR effects from scientific background to experimental observations and theoretical models.In addition,the mechanisms of various magnetoresistance beyond the GMR are reviewed,for instance,tunnelling magnetoresistance,colossal magnetoresistance,and magnetoresistance in ferromagnetic semiconductors,nanowires,organic spintronics and non-magnetic systems.

Study of Graphdiyne-based Magnetic Materials

Carbon-based magnetic semiconductors are easy to be modified with low cost and low power consumption.While they can demonstrate robust long-range magnetic ordering and show great potential for application after introducing magnetic moments.Graphdiyne(GDY),as an allotrope of carbon,exhibits intrinsic semiconductor properties and paramagnetic properties due to its unique structure and the presence of sp carbon.To improve the magnetic properties of GDY and prepare excellent magnetic semiconductor materials,scientists have done a lot of related research work.The most direct and effective method to introduce magnetism is heteroatom doping.In this review,we have entirely described the latest GDY magnetism introduction methods,effects,and theoretical calculations,etc.Doping methods include post-doping and molecular design doping.The doping elements have covered non-metallic elements(N,H,F,Cl,S),metallic elements(Fe),and functional groups.The magnetic properties of the modified GDY materials were studied by experimental analysis and theoretical calculations.This review provides a sufficient basis and direction for related researches.

The structural and magnetic properties of Fe/(Ga,Mn)As heterostructures

Fe/（Ga,Mn）As heterostructures were fabricated by all molecular-beam epitaxy.Double-crystal X-ray diffraction and high-resolution cross-sectional transmission electron micrographs show that the Fe layer has a well ordered crystal orientation and an abrupt interface.The different magnetic behavior between the Fe layer and（Ga, Mn）As layer is observed by superconducting quantum interference device magnetometry.X-ray photoelectron spectroscopy measurements indicate no Fe_2As and Fe-Ga-As compounds,i.e.,no dead magnetic layer at the interface, which strongly affects the magnetic proximity and the polarization of the Mn ion in a thin（Ga,Mn）As region near the interface of the Fe/（Ga,Mn）As heterostructure.