Li_(2)NiSe_(2):A new-type intrinsic two-dimensional ferromagnetic semiconductor above 200 K

By using first-principles electronic structure calculations,we propose a two-dimensional ferromagnetic semiconductor Li_(2)NiSe_(2)with a Curie temperature above 200 K.The structure of monolayer Li_(2)NiSe_(2)is dynamically stable,which is derived from the synthesized prototype compound Li_(2)Ni O_(2)and can be denoted as Li-decorated 1T-type NiSe_(2).The Ni–Se–Ni ferromagnetic superexchange dominates the magnetic couplings between the Ni atoms,which can be understood in the frame of the Goodenough–Kanamori–Anderson(GKA)rules.Our systematic study of monolayer Li_(2)NiSe_(2)enables its promising applications in spintronics and suggests a new choice to design two-dimensional ferromagnetic semiconductors.

Progress of novel diluted ferromagnetic semiconductors with decoupled spin and charge doping: Counterparts of Fe-based superconductors

Diluted ferromagnetic semiconductors（DMSs） that combine the properties of semiconductors with ferromagnetism have potential application in spin-sensitive electronic（spintronic） devices. The search for DMS materials exploded after the observation of ferromagnetic ordering in Ⅲ-Ⅴ（Ga,Mn）As films. Recently, a series of DMS compounds isostructural to iron-based superconductors have been reported. Among them, the highest Curie temperature TCo f 230 K has been achieved in（Ba,K）（Zn,Mn）2As2. However, most DMSs, including（Ga,Mn）As, are p-type, i.e., the carriers that mediate the ferromagnetism are holes. For practical applications, DMSs with n-type carriers are also advantageous. Very recently,a new DMS Ba（Zn,Co）2As2 with n-type carriers has been synthesized. Here we summarize the recent progress on this research stream. We will show that the homogeneous ferromagnetism in these bulk form DMSs has been confirmed by microscopic techniques, i.e., nuclear magnetic resonance（NMR） and muon spin rotation（μSR）.

Colossal negative magnetoresistance from hopping in insulating ferromagnetic semiconductors

Ferromagnetic semiconductor Ga_(1–x)Mn_(x)As_(1–y)P_(y) thin films go through a metal–insulator transition at low temperature where electrical conduction becomes driven by hopping of charge carriers.In this regime,we report a colossal negative magnetoresistance(CNMR)coexisting with a saturated magnetic moment,unlike in the traditional magnetic semiconductor Ga_(1–x)Mn_(x)As.By analyzing the temperature dependence of the resistivity at fixed magnetic field,we demonstrate that the CNMR can be consistently described by the field dependence of the localization length,which relates to a field dependent mobility edge.This dependence is likely due to the random environment of Mn atoms in Ga_(1-x)Mn_(x)As_(1-y)P_(y) which causes a random spatial distribution of the mobility that is suppressed by an increasing magnetic field.

Universal spin-dependent variable range hopping in wide-band-gap oxide ferromagnetic semiconductors

This paper proposes a universal spin-dependent variable range hopping theoretical model to describe various experimental transport phenomena observed in wide-band-gap oxide ferromagnetic semiconductors with high transition metal concentration. The contributions of the ＇hard gap＇ energy, Coulomb interaction, correlation energy, and exchange interaction to the electrical transport are considered in the universal variable range hopping theoretical model. By fitting the temperature and magnetic field dependence of the experimental sheet resistance to the theoretical model, the spin polarization ratio of electrical carriers near the Fermi level and interactions between electrical carriers can be obtained.

Spin Injection from Ferromagnetic Semiconductor CoZnO into ZnO

2x （FeNi/CoZnO）/ZnO/（CoZnO/Co） x2 spin-inJection devices were prepared by sputtering and photo-lithography. In the devices, two composite magnetic layers 2x（FeNi/CoZnO） and （CoZnO/Co）x2 with different coercivities were used to fabricate the ZnO-based semiconductor spin valve. Since the CoZnO ferromagnetic semiconductor layers touched the ZnO space layer directly, the significant spin injection from CoZnO into ZnO was observed by measuring the magnetoresistance of the spin-injection devices. The magnetoresistance reduced linearly with increasing temperature, from 1.12% at 90 K to 0.35% at room temperature.

(Ca,K)(Zn,Mn)_(2)As_(2):Ferromagnetic semiconductor induced by decoupled charge and spin doping in CaZn_(2)As_(2)

We have successfully synthesized a novel diluted magnetic semiconductor(Ca_(1−2x)K_(2x))(Zn_(1−x)Mn_(x))_(2)As_(2) with decoupled charge and spin doping.The substitutions of(Ca^(2+),K^(+))and(Zn^(2+),Mn^(2+))in the parent compound CaZn_(2)As_(2)(space group P m1(No.164))introduce carriers and magnetic moments,respectively.Doping only Mn into CaZn_(2)As_(2) does not induce any type of long range magnetic ordering.The ferromagnetic ordering arise can only when K^(+)and Mn^(2+)are simultaneously doped.The res-ulted maximum Curie temperature reaches~7 K,and the corresponding coercive field is~60 Oe.The transport measurements confirm that samples with K and Mn co-doping still behave like a semiconductor.

Synchrotron X-Ray Diffraction Studies on the New Generation Ferromagnetic Semiconductor Li(Zn,Mn)As under High Pressure

The pressure effect on the crystalline structure of the I-II- V semiconductor Li（Zn,Mn）As ferromagnet is studied using in situ high-pressure x-ray diffraction and diamond anvil cell techniques. A phase transition starting at -11.6GPa is found. The space group of the high-pressure new phase is proposed as Pmca. Fitting with the Birch-Murnaghan equation of state, the bulk modulus B0 and its pressure derivative B0 of the ambient pressure structure with space group of F43m are B0 = 75.4 GPa and B0 = 4.3, respectively.

Interlayer exchange coupling in (Ga,Mn) As ferromagnetic semiconductor multilayer systems

This paper describes interlayer exchange coupling (IEC) phenomena in ferromagnetic multilayer structures, focusing on the unique IEC features observed in ferromagnetic semiconductor (Ga,Mn)As-based systems. The dependence of IEC on the structural parameters, such as non-magnetic spacer thickness, number of magnetic layers, and carrier density in the systems has been investigated by using magnetotransport measurements. The samples in the series show both a typical anisotropic magnetoresistance (AMR) and giant magnetoresistance (GMR)-like effects indicating realization of both ferromagnetic (FM) and antiferromagnetic (AFM) IEC in (Ga,Mn)As-based multilayer structures. The results revealed that the presence of carriers in the nonmagnetic spacer is an important factor to realize AFM IEC in this system. The studies further reveal that the IEC occurs over a much longer distance than predicted by current theories, strongly suggesting that the IEC in (Ga,Mn)As-based multilayers is a long-range interaction. Due to the long-range nature of IEC in the (Ga,Mn)As-based systems, the next nearest neighbor (NNN) IEC cannot be ignored and results in multi-step transitions during magnetization reversal that correspond to diverse spin configurations in the system. The strength of NNN IEC was experimentally determined by measuring minor loops that correspond to magnetization flips in specific (Ga,Mn)As layer in the multilayer system.

Current spin polarization and spin injection efficiency in ZnO-based ferromagnetic semiconductor junctions

[FeNi（3 nm）/Zn1-xCoxO（3 nm）]2/ZnO（d nm）/[Zn1-xCoxO（3 nm）/Co（3 nm）]2 （d=3 and 10） semiconductor junctions were prepared by magnetron sputtering system and photolithography. The spin valve effect was observed in these junctions because the utility of the ferromagnetic composite layers acted as soft and hard magnetic layers. The electrical detection was performed by measuring the magnetoresistance of these junctions to investigate the current spin polarization asc in the ZnO layer and the spin injection efficiency η of spin-polarized electrons. asc was reduced from 11.7% （and 10.5%） at 90 K to 7.31% （and 5.93%） at room temperature for d=3 （and d=10）. And η was reduced from 39.5% （and 35.5%） at 90 K to 24.7% （and 20.0%） at room temperature for d=3 （and d=10）.

The room temperature ferromagnetism in highly strained twodimensional magnetic semiconductors

In spintronics,it is still a challenge in experiments to realize the ferromagnetic semiconductors with Curie temperature Tc above room temperature.In 2017,the successful synthesis of two-dimensional(2D)van der Waals ferromagnetic semiconductors,including the monolayer CrI3 with Tc=45 K[1]and the bilayer Cr2Ge2Te6 with Tc=28 K[2]in experiments,has attracted extensive attention in the 2D ferromagnetic semiconductors.One of the key problems is to find suitable 2D magnetic semiconductors,which can have room-temperature operation as required in applications.

Enhancement of Ferromagnetic Ordering Curie Temperature in N-Doped MgO under Hydrostatic Pressure

We have explored the magnetic properties of Nitrogen doped cubic MgO using the full potential linearized augmented plane wave (FP-LAPW) method. The unit cell has 128 atoms, and two Nitrogen atoms are placed in the positions of oxygen sites. This corresponds to 3.125% doping concentration. Our calculations predict that the ferromagnetic state, with a magnetic moment of about 1.0 μB per Nitrogen-dopant, is more favorable in energy than the nonmagnetic state, and the ferromagnetic correlations are influenced by the impurity bound state. The magnetic moment mainly arises from p orbital of Nitrogen which substitutes the Oxygen atom, with a little contribution from the Oxygen atoms surrounding Nitrogen atom. The resulting band structure and densities of states agree well with the recent theoretical works. The ferromagnetic ordering temperatures obtained from DFT simulations have been given in detail. Our results show that the pressure enhances the temperature in MgO:N.

Internal magnetic-field-enhanced photogenerated charge separation in ferromagnetic TiO_(2)surface heterojunctions

The use of the internal magnetic field of ferromagnets can effectively promote charge separation and transfer(CST)in photoelectrochemical energy conversion.However,photoelectrochemical materials with a ferromagnetic field are scarce,and the internal magnetic field is negligible in nonferromagnetic mate-rials.To address this issue,we propose a rational method for preparing ferromagnetic TiO_(2)powder using controllable oxygen vacancies in anatase TiO_(2)with co-exposed{001}and{101}facets.Accordingly,an ex-cellent saturation magnetisation of 0.0014 emu/g in TiO_(2)is achieved owing to an asymmetric and uneven charge distribution.Compared with that of nonferromagnetic TiO_(2),the efficiency of photocatalytic hydro-gen generation of ferromagnetic TiO_(2)is improved by 0.64 times.The enhancement of photocatalytic hy-drogen generation is due to the different forces exerted on the electrons and holes in the magnetic field,which significantly improve the photogenerated CST efficiency of ferromagnetic TiO_(2).This result high-lights the significant role of the synergistic regulation of the crystal structure and defects in regulating the ferromagnetic characteristics of materials.The findings of this study provide guidance for leveraging point defects to promote CST for high-efficiency solar-energy conversion systems.

Toward intrinsic room-temperature ferromagnetism in two-dimensional semiconductors

Two-dimensional (2D) ferromagnetic semiconductors have been recognized as the most promising candidates for next-generation low-cost, high-performance and nano-scale spintronic applications such as spin field-effect transistors and quantum computation/communication. However, as one of the 125 important scientific issues raised by Science journal in 2005 that "is it possible to create magnetic semiconductors that work at room temperature?", how to achieve a feasible ferromagnetic semiconductor with high Curie temperature is still a long-standing challenge despite of tremendous efforts have been devoted in this field since 1960s. The recent discovery of 2D ferromagnetic semiconductors Cr2Ge2Te6 and CrI3 has evoked new research interests in 2D intrinsic ferromagnetic semiconductors. But the low Curie temperature (<45 K) of these materials is still badly hindering their industrial applications.

The influence of the Dresselhaus spin-orbit coupling on the tunnelling magnetoresistance in ferromagnet/ insulator /semiconductor/ insulator /ferromagnet tunnel junctions

This paper investigates the effect of Dresselhaus spin orbit coupling on the spin-transport properties of ferromagnet/insulator/semiconductor/insulator/ferromagnet double-barrier structures. The influence of the thickness of the insulator between the ferromagnet and the semiconductor on the polarization is also considered. The obtained results indicate that （i） the polarization can be enhanced by reducing the insulator layers at zero temperature, and （ii） the tunnelling magnetoresistance inversion can be illustrated by the influence of the Dresselhaus spin-orbit coupling effect in the double-barrier structure. Due to the Dresselhaus spin-orbit coupling effect, the tunnelling magnetoresistance inversion occurs when the energy of a localized state in the barrier matches the Fermi energy EF of the ferromagnetic electrodes.

Room Temperature Ferromagnetism in Ga1-xHoxN （x=0.0 and 0.05） Diluted Magnetic Semiconductor Thin Films

做的钬轧了冲淡的磁性的半导体薄电影被退火的热蒸发技术和随后的氨准备了。X 光检查衍射大小表明所有山峰属于完全六角形的 wurtzite 结构。表面形态学和作文分析被扫描电子显微镜学和精力执行散光谱学分别地。房间温度 Ga1xHoxN 的铁磁性的性质(x=0.0， 0.05 ) 电影用颤动被分析在房间温度的样品磁强计。磁性的大小证明 undoped 拍摄(即轧) 展出抗磁的行为，当惊讶做(Ga0.95Ho0.05N ) 电影展出了铁磁性的行为时。

Microstructure and ferromagnetism of heavily Mn doped SiGe thin flims

Heavily Mn-doped SiGe thin films were grown by radio frequency magnetron sputtering and then treated by postgrowth thermal annealing.Structural characterizations reveal the coexistence of Mn-diluted SiGe crystals and Mn-rich nanoclusters in the annealed films.Magnetic measurements indicate the ferromagnetic ordering of the annealed samples above room temperature.The data suggest that the ferromagnetism is probably mainly contributed by the Ge-rich nanoclusters and partially contributed by the tensile-strained Mn-diluted SiGe crystals.The results may be useful for room temperature spintronic applications based on group IV semiconductors.

Ferromagnetism of Zn_(1-x)Cu_xO Polycrystalline Made by Solid State Reaction

The Zn1-xCuxO polycrystalline materials were prepared by doping CuO into wurtzite ZnO through solid state reaction. The high concentration of copper doping in ZnO exhibited remarkable room temperature ferromagnetism. The Experiments showed that the magnetization saturation rose with the increase of Cu content. For the low Cu content sample, the hysteresis loop was slightly tilted which indicated that the diamagnetism coexisted in this sample. The temperature dependence of magnetization of Zn1-xCuxO revealed that the magnetic exchange coupling depended on the doping concentration of Cu and there were many different local environments for magnetism. The measured hysteresis loop and temperature dependence of magnetization were overall performance of the magnetism coming from a wide distribution of ferromagnetic exchange couplings.

Theoretical Study on the Ferromagnetism of Cr-doped In_2O_3

Density functional theory （DFT） calculations are performed to investigate the electronic structure and ferromagnetism of （In, Cr）2O3. The densities of states suggest that the Cr dopants provide nearly 100% polarization of the conduction carriers and the ferromagnetic ground state in Cr-doped In2O3 can be explained from p-d hybridization mechanism. The calculation results also show that the ferromagnetism is strengthened in the presence of oxygen vacancy.

Defect induced room-temperature ferromagnetism and enhanced photocatalytic activity in Ni-doped ZnO synthesized by electrodeposition

Zn0.90Ni0.10O nanoparticles have been synthesized by single-bath two-electrode electrodeposition at constant voltage. X-ray diffraction, UV vis and photoluminescence studies reveal that a single-phase polycrystalline hcp wurtzite crystal structure of ZnO is evolved. The material consists of a large number of defects such as oxygen vacancy (Ov) and zinc interstitial (Zi). The magnetization study reveals that the sample exhibits room-temperature global ferromagnetism and the ferromagnetic ordering seems to be defect induced via bound magnetic polaron mechanism, and double exchange is also expected to have played role. Interesting optoelectronic properties have been found in the synthesized sample and the material seems to be a potential candidate to be used as a UV sensor. Such a transition metal doped ZnO based dilute magnetic semiconducting system exhibiting room-temperature ferromagnetism is likely to be first of its kind in the sense that such materials have not yet been reported to be synthesized by the simple method of electrodeposition to the best of our knowledge on the basis of ample literature review.

Room-temperature ferromagnetism observed in Nd-doped In_2O_3 dilute magnetic semiconducting nanowires

Nd-doped In_2O_3 nanowires were fabricated by an Au-catalyzed chemical vapor deposition method.Nd atoms were successfully doped into the In_2O_3 host lattice structure,as revealed by energy dispersive x-ray spectroscopy,x-ray photoelectron spectroscopy,Raman spectroscopy,and x-ray diffraction.Robust room temperature ferromagnetism was observed in Nd-doped In_2O_3 nanowires,which was attributed to the long-range-mediated magnetization among Nd^（3＋）-vacancy complexes through percolation-bound magnetic polarons.