β-Ga_(2)O_(3) junction barrier Schottky diode with NiO p-well floating field rings

Recently,β-Ga_(2)O_(3),an ultra-wide bandgap semiconductor,has shown great potential to be used in power devices blessed with its unique material properties.For instance,the measured average critical field of the vertical Schottky barrier diode(SBD)based onβ-Ga_(2)O_(3) has reached 5.45 MV/cm,and no device in any material has measured a greater before.However,the high electric field of theβ-Ga_(2)O_(3) SBD makes it challenging to manage the electric field distribution and leakage current.Here,we showβ-Ga_(2)O_(3) junction barrier Schottky diode with NiO p-well floating field rings(FFRs).For the central anode,we filled a circular trench array with NiO to reduce the surface field under the Schottky contact between them to reduce the leakage current of the device.For the anode edge,experimental results have demonstrated that the produced NiO/β-Ga_(2)O_(3) heterojunction FFRs enable the spreading of the depletion region,thereby mitigating the crowding effect of electric fields at the anode edge.Additionally,simulation results indicated that the p-NiO field plate structure designed at the edges of the rings and central anode can further reduce the electric field.This work verified the feasibility of the heterojunction FFRs inβ-Ga_(2)O_(3) devices based on the experimental findings and provided ideas for managing the electric field ofβ-Ga_(2)O_(3) SBD.

A Novel Polysilicon and Oxide Sandwich Deep Trench with Field Limiting Ring for RF Power Transistors

A vertical sandwich deep trench with a field limiting ring is proposed to improve the breakdown voltage of power devices and high voltage devices.Simulation result shows that nearly 100% breakdown voltage of the plane junction can be realized.

A New Quasi 2-Dimensional Analytical Approach to Predicting Ring Junction Voltage,Edge Peak Fields and Optimal Spacing of Planar Junction with Single Floating Field Limiting Ring Structure

WT8.BZ]A new quasi 2-dimensional analytical approach to predicting the ring voltage,edge peak fields and optimal spacing of the planar junction with a single floating field limiting ring structure has been proposed,based on the cylindrical symmetric solution and the critical field concept.The effects of the spacing and reverse voltage on the ring junction voltage and edge peak field profiles have been analyzed.The optimal spacing and the maximum breakdown voltage of the structure have also been obtained.The analytical results are in excellent agreement with that obtained from the 2-D device simulator,MEDICI and the reported result,which proves the presented model valid.

A novel thin drift region device with field limiting rings in substrate

A novel thin drift region device with heavily doped N＋ rings embedded in the substrate is reported, which is called the field limiting rings in substrate lateral double-diffused MOS transistor （SFLR LDMOS）. In the SFLR LDMOS, the peak of the electric field at the main junction is reduced due to the transfer of the voltage from the main junction to other field limiting ring junctions, so the vertical electric field is improved significantly. A model of the breakdown voltage is developed, from which optimal spacing is obtained. The numerical results indicate that the breakdown voltage of the device proposed is increased by 76% in comparison to that of the conventional LDMOS.

Experimental and numerical analyses of high voltage 4H-SiC junction barrier Schottky rectifiers with linearly graded field limiting ring

This paper describes the successful fabrication of 4H-SiC junction barrier Schottky （JBS） rectifiers with a linearly graded field limiting ring （LG-FLR）. Linearly variable ring spacings for the FLR termination are applied to improve the blocking voltage by reducing the peak surface electric field at the edge termination region, which acts like a variable lateral doping profile resulting in a gradual field distribution. The experimental results demonstrate a breakdown voltage of 5 kV at the reverse leakage current density of 2 mA/cm2 （about 80% of the theoretical value）. Detailed numerical simulations show that the proposed termination structure provides a uniform electric field profile compared to the conventional FLR termi- nation, which is responsible for 45% improvement in the reverse blocking voltage despite a 3.7% longer total termination length.

The Friction and Wear of Sleeve-ring Pair Lubricated by Active Lubricants in the Presence of Magnetic Field

The effect of magnetic field on the tribological process of sleeve-ring pair lubricated by WRL lubricants was investigated by means of a NG-x wear tester and a PS5013 video microscope. The friction coefficient(f) and the wear weight(W) in lubricating test with WRL lubricant were decreased with the increase in the magnetic field vertical to the rubbing surface, and an almost zero wear lubricating situation was gained in a magnetic field of 1000A/m. The captured wear micro particles on the rubbing surface were observed in the testing process, and the theoretical analysis of magnetic effects was completed. It is indicated that the magnetic field has not only a capturing action of wear micro particles on the worn surface, but also a inducing polarization of magnetic anisotropy of lubricant molecular. The actions promote the absorption of WRL lubricant into the wear surface as well as wear micro-particles, so that a good tribological effect is obtained when both magnetic field and WRL present.

Excitonic Absorption of Semiconductor Nanorings under Terahertz Fields

The optical absorption of GaAs nanorings （NRs） under adc electric field and a terahertz （THz） ac electric field applied in the plane containing the NRs is investigated theoretically. The NRs may enclose some magnetic flux in the presence of a magnetic field perpendicular to the NRs plane. Numerical calculation shows that the excitonic effects are essential to correctly describe the optical absorption in NRs. The applied lateral THz electric field, as well as the dc field leads to reduction, broadening and splitting of the exciton peak. In contrast to the presence of a dc field, significant optical absorption peak arises below the zero-field bandgap in the presence ofa THz electric field at a certain frequency. The optical absorption spectrum depends evidently on the frequency and amplitude of the applied THz field and on the magnetic flux threading the NRs. This promises potential applications of NRs for magneto-optical and THz electro-optical sensing.

Effect of electric field on the electronic spectrum and the persistent current of a quantum ring with two electrons

The effect of an electric field E on a narrow quantum ring that contains two electrons and is threaded by a magnetic flux B has been investigated. Localization of the electronic distribution and suppression of the AharonovBohm oscillation （ABO） are found in the two-electron ring, which are similar to those found in a one-electron ring. However, the period of ABO in a two-electron ring is reduced by half compared with that in a one-electron ring. Furthermore, during the variation of B, the persistent current of the ground state may undergo a sudden change in sign. This change is associated with a singlet-triplet transition and has no counterpart in one-electron rings. For a given E, there exists a threshold of energy. When the energy of the excited state exceeds the threshold, the localization would disappear and the ABO would recover. The value of the threshold is proportional to the magnitude of E. Once the threshold is exceeded, the persistent current is much stronger than the current of the ground state at E=0.

Donor-bound electron states in a two-dimensional quantum ring under uniform magnetic field

The electron states in a two-dimensional GaAs/AlGaAs quantum ring are theoretically studied in effective mass approximation. On-centre donor impurity and uniform magnetic field perpendicular to the ring plane are taken into account. The energy spectrum with different angular momentum changes dramatically with the geometry of the ring. The donor impurity reduces the energies with an almost fixed value; however, the magnetic field alters energies in a more complex way. For example, energy levels under magnetic field will cross each other when increasing the inner radius and outer radius of the ring, leading to the fact that the arrangement of energy levels is distinct in certain geometry of the ring. Moreover, energy levels with negative angular momentum exhibit the non-monotonous dependence on the increasing magnetic field.

Phase field modeling of the ring-banded spherulites of crystalline polymers: The role of thermal diffusion

The ring-banded spherulite is a special morphology of polymer crystals and has attracted considerable attention over recent decades. In this study, a new phase field model with polymer characteristics is established to investigate the emergence and formation mechanism of the ring-banded spherulites of crystalline polymers. The model consists of a nonconserved phase field representing the phase transition and a temperature field describing the diffusion of the released latent heat. The corresponding model parameters can be obtained from experimentally accessible material parameters.Two-dimensional calculations are carried out for the ring-banded spherulitic growth of polyethylene film under a series of crystallization temperatures. The results of these calculations demonstrate that the formation of ring-banded spherulites can be triggered by the self-generated thermal field. Moreover, some temperature-dependent characteristics of the ring-banded spherulites observed in experiments are reproduced by simulations, which may help to study the effects of crystallization temperature on the ring-banded structures.

基于半解析涡环模型的农用单旋翼直升机流场快速计算

农业航空领域中,定量获取风场(流场)速度分布对单旋翼直升机辅助授粉作业、农药施用效率提升具有重要意义。基于此提出一种半解析理论方法能够快速完整计算单旋翼流场速度。以涡环模型为基础,将农用直升机旋转桨盘下的尾涡系等效为涡环连续叠加所形成的圆柱涡面,再由涡环速度诱导公式半解析计算直升机旋翼空间各点速度。理论模型与仿真和文献试验数据比较,结果表明:涡环模型简单快速,普通计算机(CPU 2 GHz,内存2 GB)上2.8 s完成计算;悬停时与计算流体力学仿真结果下洗速度径向平均误差小于1.9 m/s,平均相对误差小于39.1%,轴向平均误差小于2.26 m/s,平均相对误差小于54.6%;悬停时,诱速从中央往桨尖递增;前飞时,平飞速度越大诱速越小;流场主要影响因素依次为前飞速度、旋翼半径、飞机总重、空气密度。为定量计算农用直升机旋翼风场、辅助授粉作业和田间施药喷头布置提供一种快速方法和参考。

The substorm current wedge and midnight sector partial ring current near substorm onset: A synthesis based on a magnetotail magnetic field geometry model

The Substorm Current Wedge （SCW） occurrence in the late growth and onset phases of substorms was proposed as the current system which disrupts cross-tail current by diverting it to the ionosphere. The closure current for the SCW originally was suggested to be the strong westward auroral electrojet （WEJ）. However, the SCW-WEJ system has no viable generator current. Similarly, the asymmetric or Partial Ring Current （PRC） increases in strength during the growth phase, and is sometimes associated with an enhanced Region 2 field-aligned current （FAC） closing to the ionosphere, but specifics of that closure have been lacking. Here we present a tmifying picture which includes the SCW post- and pre-midnight （AM and PM, respectively） currents and a generator current in the midnight portion of the PRC system, with these currents based upon a model of the nightside magnetotail magnetic geometry. That geometry consists of open north and south lobe regions surrounding a plasmasheet with two types of closed field line regions-stretched lines in the central part of the plasmasheet （SPS） and dipolar lines （DPS） between the low lati- tude boundary layer （LLBL） regions and the SPS. There is also an important plasmasheet transition region （TPS） in which the dipolar field near the plasmapause gradually transforms to stretched lines near the earthward edge of the SPS, and in which the midnight part of the PRC flows. We propose that our proposed near-onset current system consists of a central current which be- comes part of the midnight sector PRC and which is the generator, to which are linked two three-part current systems, one on the dawnside and one on the duskside. The three-part systems consist of up and down FACs closing as Pedersen currents in the iono- sphere. These 3-part systems are not activated until near-onset is reached, because of a lack of ionospheric conductivity in the appropriate locations where the Pedersen current closure occurs. The initial downward FAC of the 3-part dawnside system and the final upward FAC of the 3-part duskside system correspond to the AM and PM current segments, respectively, of the originally proposed SCW.

两级液环压缩机内流场及外特性

采用数值模拟与试验相结合的方法,以2SY-6两级液环压缩机为研究对象,对多级液环压缩机在不同工况、不同叶轮宽度比下内流场及性能进行对比分析,结果表明:二级叶轮叶片载荷小于一级叶轮,其排气口区域锯齿形气液交界面较一级叶轮更为光滑.一级叶轮吸气口区域回流强度相对于二级叶轮吸气口区域更强,一级叶轮吸气口区域湍动能明显大于二级叶轮.等外径设计的二级叶轮进出口压缩比远小于一级叶轮,二级叶轮的做功能力小于一级叶轮.由于一级叶轮的进出口压缩比较大且均位于效率极值点的右侧,一级叶轮效率随泵的压缩比增大而逐渐下降,而二级叶轮压缩比范围包含极值点,所以其效率先增后减.液环压缩机随着二级叶轮宽度的增大,其吸气能力越强,各个工况下的流量均逐渐增大.低压缩比工况下的效率随k值减小逐渐增大,高压缩比工况下的效率随k值减小先增后减.随首次级叶轮宽度比k值的减小,二级叶轮的压缩比曲线逐渐向上平移,而一级叶轮的压缩比曲线逐渐向下平移.随泵出口压力的增大,首次级叶轮压缩比的比值曲线下降趋于平缓,k值为2.2时两级叶轮压缩比的比值趋于1.1.

特高压输电线路磁场对电力金具材料摩擦磨损的影响

目的通过分析特高压直流线路工频磁场环境对电力金具材料磨损行为的影响,探究其磨损机理,为联接金具的磨损失效预测提供理论依据。方法分析线路实际运行参数,计算工频磁场强度,采用自制电磁线圈与M-2000型磨损试验机相结合,通过分组控制变量法研究额定工况下金具材料的磨损过程,以及不同磁场强度下材料的磨损行为。结果在磁场环境中材料的磨损程度远小于无磁场情况下。在0~800 A/m范围内,随着磁场强度的增加,摩擦因数稍降低,质量损失量和磨损率呈下降趋势。在不同磁场强度下磨损试样均呈现越贴近摩擦接触表面区域其显微硬度越高,且随着纵深向后呈递减趋势。在无磁场情况下,磨损接触表面的犁沟较深,遍布锯齿型边缘的凹坑和山脊型微凸峰。在磁场环境中试样的接触表面和磨屑表面更加光滑平整,且氧含量明显升高。结论在无磁场情况下,接触表面为严重的磨粒磨损和黏着磨损。在磁场环境中,磨损试样在短时间内经历了初期磨合阶段和磨损加剧阶段,从而加速过渡到稳定磨损阶段,由严重的磨粒磨损和黏着磨损加速向轻微磨损转变。稳定阶段的主要磨损机制为氧化磨损,并伴随着轻微的磨粒磨损、黏着磨损,以及两摩擦副与磨屑“阻隔层”之间的三体磨损。工频磁场环境对试样磨损起到了一定的减摩作用,磨损程度减轻。

一种沟槽-场限环复合终端结构的设计

为了改善硅功率器件击穿电压性能以及改善IGBT电流的流动方向,提出了一种沟槽-场限环复合终端结构。分别在主结处引入浮空多晶硅沟槽,在场限环的左侧引入带介质的沟槽,沟槽右侧与场限环左侧横向扩展界面刚好交接。结果表明,这一结构改善了IGBT主结电流丝分布,将一部分电流路径改为纵向流动,改变了碰撞电离路径,在提高主结电势的同时也提高器件终端结构的可靠性;带介质槽的场限环结构进一步缩短了终端长度,其横纵耗尽比为3.79,较传统设计的场限环结构横纵耗尽比减少了1.48%,硅片利用率提高,进而减小芯片面积,节约制造成本。此方法在场限环终端设计中非常有效。

空间目标远距离磁控方法及应用分析

星间电磁力/力矩作用相对于传统航天器操控方式,具有不消耗推进剂、无羽流污染、可控能力强等优势。因此,在交会对接、编队集群、失效卫星消旋等方面得到了广泛关注。然而,电磁力/力矩的数值与场源作用距离的3到4次方成反比,导致电磁力/力矩的有效作用空间有限。磁化同轴枪强流脉冲放电装置可产生高传输速度(~1000 km/s)、高电子密度(~10^(16)cm^(-3))、高能量密度(~1 MJ/m^(2))、具有球马克位形的等离子体环,且等离子体环的放电电流可产生强度可观的环向磁场和极向磁场(~1 T)。此外,等离子体环的生成和输运环境与空间真空环境高度契合。基于磁化同轴枪生成具有球马克位形的等离子体环并将等离子体环所携带磁场远距投送的新型磁控方式,本文研究可控等离子体环远距投送对空间目标的磁控能力以及对空间目标消旋/回收的应用潜力等,并通过初步仿真算例予以验证结论的正确性。

基于光纤环衰荡技术的锥形光纤磁场测量方法

针对目前光纤磁场传感器解调方法中存在的实用性差且造价昂贵的问题,提出了一种基于光纤环衰荡技术的锥形光纤磁场测量方法,实现了磁场的时间域解调。施加不同强度的磁场时,光在锥形光纤处引起的损耗不同,导致系统衰减时间不同。将系统衰减时间和磁场强度建立联系,实现了磁场测量。为降低传感单元温度和磁场之间的交叉敏感,设计了温度控制电路,将传感单元的温度设定在25.0℃。实验结果表明,该传感器在磁场强度2 mT~9 mT范围内时,磁场强度H和衰减时间τ具有R^(2)=0.98273的线性拟合度,计算得到该传感器的磁场灵敏度为-11.65μs/mT。与光纤磁场传感器的其他解调方式相比,采用光纤环衰荡技术的磁场测量方法,具有响应速度快、成本低、稳定性好的优点。

高海拔特高压变压器均压环结构设计

特高压变压器在投运前需要进行严格的交接试验以保证其能安全可靠运行,而变压器上均压环的均压能力会影响交接试验的准确性。高海拔环境下均压环结构出现问题时其均压能力会发生变化,因此研究设计面对不同状况都能有良好均压能力的均压环尤为重要。文中首先采用COMSOL软件搭建了500 kV变压器耐压试验回路三维模型;其次研究均压环的管径、环径和环间距变化对均压环均压能力的影响;最后研究均压环在毛糙状态下的均压能力变化。研究发现在均压环管径和环径增大或环间距减小时,均压环均压能力会增强,其中管径改变带来的影响最大;均压环为毛糙表面时其均压能力会显著下降,其中粘附圆锥颗粒时均压能力下降最显著,凹陷时下降最少,说明均压环表面越平整,均压能力越好。该研究能为高海拔特高压变压器均压环设计相关工作提供一定帮助。

基于Q型非球面的全景环带红外光学系统设计

全景环带光学系统凭借周视范围实时成像的特点已在超大视场光学领域中得到了广泛应用。传统的全景环带光学系统将折射、反射面集成在一片块状透镜中,光线在其内部进行多次折、反射导致头部单元体积较大,同时红外透镜材料密度大、折射率温度稳定性差等特点也与光学遥感器轻量化、可靠性高的应用需求相矛盾。文章基于像差理论,讨论了全景环带两反射镜红外光学系统头部单元初始结构设计方法,将Q型(Q-Type多项式)非球面引入全景头部单元增加优化变量,用偏离因子因子k_(RMS)数值表征非球面加工难度,设计了以两反射镜为头部单元的全景环带红外光学系统。该系统在奈奎斯特频率(20线对/mm)处调制传递函数优于0.5;全视场像元(25μm×25μm区域内)能量集中度优于65%,像质评价结果表明其成像品质良好。该设计在缩小系统体积、提高光学设计优化效率方面有很大的改进,满足超大视场实时成像的应用需求。