Principle and Process Window of Cerium Dioxide Thin Film Fabrication with Dual Plasma Deposition

Cerium dioxide, CeO2, is a potentially superior material in a myriad of areas, and many methods have been proposed to deposit single crystal CeO2 thin films. A novel fabrication technique utilizing dual plasma generated by metal vacuum arc (MEVVA) and radio frequency (RF) is discussed in this paper. We have recently conducted a systematic investigation to determine the optimal process window to deposit CeO2 thin films'on Si(100) substrates. The X-ray diffraction results show the existence of CeO2(100) in the as-deposited sample.

Fabrication of High-Haze Flexible Transparent Conductive PMMA Films Embedded with Silver Nanowires

High-haze flexible transparent conductive polymethyl methacrylate （PMMA） films embedded with silver nanowires （AgNWs） are fabricated by a low-cost and simple process. The volatilization rate of the solvent in PMMA solution affects the surface microstructures and morphologies, which results in different haze factors of the composite films. The areal mass density of AgNW shows a significant influence on the optical and electrical properties of composite films. The AgNW/PMMA transparent conductive films with the sheet resistance of 5.5Ω sq ^-1 exhibit an excellent performance with a high haze factor of 81.0% at 550？nm.

A Novel Method of Fabricating Flexible Transparent Conductive Large Area Graphene Film

We fabricate flexible conductive and transparent graphene films on position-emission-tomography substrates and prepare large area graphene films by graphite oxide sheets with the new technical process. The multi-layer graphene oxide sheets can be chemically reduced by HNO3 and HI to form a highly conductive graphene film on a substrate at lower temperature. The reduced graphene oxide sheets show a high conductivity sheet with resistance of 476Ω/sq and transmittance of 76% at 550nm （6 layers）. The technique used to produce the transparent conductive graphene thin film is facile, inexpensive, and can be tunable for a large area production applied for electronics or touch screens.

Fabrication of GaN epitaxial films on Al_2O_3/Si (001) substrates

Single crystal GaN films of hexagonal modification have been fabricated on Al2O3/Si （001） substrates via a low pressure metalorganic chemical deposition （LP-MOCVD） method. The full width at half-maximum of （0002） X-ray diffraction peak for the GaN film 1.1 μm thick was 72 arcmin, and the mosaic structure of the film was the main cause of broadening to the X-ray diffraction peak. At room temperature, the photoluminescence （PL） spectrum of GaN exhibited near band edge emission peaking at 365 nm.

Reply to Comments on "Structural,Optical,and Electrical Properties of Zn-Doped CdO Thin Films Fabricated by a Simplified Spray Pyrolysis Technique'' by K.Usharani and A.R.Balu published in Acta Metall.Sin.(Engl.Lett.) 28(1),64–71(2015)

Following are the comments for the queries raised by Prof. Pawel E. Tomaszewski on our published paper entitled ＂Structural, Optical, and Electrical Properties of Zn-Doped CdO Thin Films Fabricated by a Simplified Spray Pyrolysis Technique＂ by K. Usharani and A.R. Balu published in Acta Metall. Sin.

Comments on "Structural,Optical,and Electrical Properties of Zn-Doped CdO Thin Films Fabricated by a Simplified Spray Pyrolysis Technique'' by K.Usharani and A.R.Balu Published in Acta Metall.Sin.(Engl.Lett.) 28(1),64–71(2015)

The commented paper [1] presents the results on structural, optical, and electrical properties of Zn-doped CdO thin films. Unfortunately, there are several mistakes and errors not found by any of referees. It is necessary to show these mistakes or misleading statements to avoid their use in the future papers by authors and other peoples.