THIN FILM PREPARATION OF AMORPHOUS Ti-Ni ALLOY AND THEIR HYDROGEN ABSORPTION PROPERTIES

Amorphous Ti_(0.88)Ni_(1.00) and Ti_(1.69)Ni_(1.00) alloy films are prepared by means of ion beam sputtering using TiNi and Ti_2Ni alloy targets, respectively. Their hydrogen absorption properties are investigated by a galvanostatic method. The results show th the discharge capacity of the Ti_(1.69)Ni_(1.00) sample is higher than that of the Ti_(0.88)Ni_(1.00) sample. And the film electrodes have high durability and long cycle life.

PREPARATION OF TiO_2 THIN FILMS BY MOCVD METHOD

Preparation of TiO2 thin films by MOCVD method is presented in this paper. A MOCVD system has been designed and built. A wide range of processing conditions are investigated to deposit TiO2 films on Si wafers starting from metal-organic precursor tetrabutyl titanate. Activation energy of the film formation （E） is obtained to be 23.6 kJ/mol. Structure of films is pure anatase when deposit temperatures are low, rutile forms at 700℃. The films also exhibit preferred crystallographic orientations which strongly depend on deposit conditions. Refractive index increases with increasing of film thickness and decreasing of deposit temperature.

Preparation of High-Quality Poly-Si Films by a Solid Phase Crystallizing Method

A solid phase crystallizing method has been developed to grow a Si crystal at tem-peratures as low as 550 ℃. Using this method, a high-quality thin-film polycrystalline silicon (Poly-Si) was obtained. The largest grain size, examined with X-ray diffraction spectroscopy and scanning electron microscopy images of recrystallized samples, is approximately 1 /μm for substrate temperature at 300 ℃ and annealed at 550℃ for 3 hours.

THE PREPARATION OF ISOPOLYMOLYBDIC ACID-POLYANILINE FILM MODIFIED ELECTRODE AND ITS CATALYTIC EFFECTS ON CHLORATE IONS

The preparation method of H_4MoO_(26)-polyaniline film modified electrode and its voltammetric behaviour are described. The modified electrode has high electrocatalytic activity on chlorate ions.

Preparation and Analysis of Si_3N_4 Film

Microwave Electron Cyclotron Resonance (ECR) Plasma assisted Chemical Vapor Deposition (CVD) technology has been used to prepare Si3N4 films, which were analyzed by using infrared (IR) transmission spectroscopy and XPS. The analysis results show that with the increase of the deposition temperature, the H content decreases, and the densification of the film increases.When the temperature is up to 360℃, the stoichiometrical rate of Si:N is close to 0.75. The protective property of Si3N4 films is also examined.

Preparation of Highly Textured Bi and MnBi Films by the Pulsed Laser Deposition Method

Textured Bi and MnBi/Bi thin films are prepared by the pulsed laser deposition method. The highly c-axis textured MnBi films are obtained by annealing the bilayer consisting of textured Bi and Mn films. The eoercivities of the MnBi/Bi film are 1.5 T and 2.35 T at room temperature and at 373K, respectively, showing a positive temperature coefficient. Microstructural investigations show that the textured MnBi film results from the orientated growth induced by the textured Bi under-layer.

Preparation of Diamond-like Carbon Film Assisted in the Plasma of Dielectric Barrier Discharge at Atmospheric Pressure

Dielectric barrier discharge at atmospheric presure has been applied to prepare hydrocarbon films on large- area glass and silicon substrates. When hydrogen and methane mixture(2:1) is used as discharge gas and the substrate is heated to 300 C, hard hydrogenated amorphous carbon film is deposited. From the IR deconvolution analysis of the C-H stretching absorption for the coating, the hydrocarbon group ration (CH3:CH2:CH) and C-C bond type ratio (sp3c/sp2c) are about 10%: 21%: 69% and 3:1~6:1,respectively. Their Knoop hardness is up to 10Gpa. No film isdeposited when the content of methane in the mixed gases is decreased to 5% at 300 C silicon substrate.

STUDIES ON LANGMUIR-BLODGETT FILM OF METAL COMPLEXES(Ⅰ)-PREPARATION AND CHARACTERIZATION OF THE LB FILM OF N-HEXADECYL PYRIDINIUM TETRAKIS(1-PHENYL-3-METHYL-4-BENZOYL-PYRAZOL-5-ONE)EUROPIUM,C_5H_5NC_(16)H_(33)Eu(PMBP)_4

The LB film of the title complex was prepared by dropping a benzene solution of the title complex on the surfaceof water subphase at 25±1℃.The film was deposited in Z type on various hydrophilic pretreated substrates ofquartz,CaF;and electronic conductive glass for different purposes.The π-A curve of the film shows that thecross section per molecule is 125;,which indicates that the alkyl chain of the molecule is basically perpendiculalto the surface of the substrate.UV,IR spectra and transmission electronic microscopy of the film were also obtained.

A Comparative Study of Boron and Phosphorus Doping Effects in SiC: H Films Prepared by ECR-CVD

Hydrogenated silicon carbide films (SiC:H) were deposited using the electron cyclotron resonance chemical vapour deposition (ECR-CVD) technique from a mixture of methane, silane and hydrogen, and using diborane and phosphine as doping gases. The effects of changes in the microwave power on the deposition rate and optical bandgap were investigated, and variations in the photoand dark-conductivities and activation energy were studied in conjunction with film analysis using the Raman scattering technique. In the case of boron-doped samples, the conductivity increased rapidly to a maximum, followed by rapid reduction at high microwave power. The ratio of the photo- to dark-conductivity (σph/σd) peaked at microwave power of ~600 W. Under conditions of high microwave power, Raman scattering analysis showed evidence of the formation and increase in the silicon microcrystalline and diamond-like phases in the films, the former of which could account for the rapid increase and the latter the subsequent decrease in the conductivity.In the case of phosphorusdoped SiC:H samples, it was found that increase in the microwave power has the effect of enhancing the formation of the silicon microcrystalline phase in the films which occurred in correspondence to a rapid increase in the conductivity and reduction in the activation energy The conductivity increase stabilised in samples deposited at microwave power exceeding 500 W probably as a result of dopant saturation. Results from Raman scattering measurements also showed that phosphorus doping had the effect of enhancing the formation of the silicon microcrystals in the film whereas the presence of boron had the effect of preserving the amorphous structure.

Structural, Optical and Luminescence Properties of ZnO Thin Films Prepared by Sol-Gel Spin-Coating Method： Effect of Precursor Concentration

Transparent zinc oxide（ZnO） thin films are fabricated by a simple sol-gel spin-coating technique on glass substrates with different solution concentrations（0.3-1.2 M） using zinc acetate dehydrate [Zn（CH_3COO）_2·2H_2O] as precursor and isopropanol and monoethanolamine（MEA） as solvent and stabilizer, respectively. The molar ratio of zinc acetate dehydrate to MEA is 1.0. X-ray diffraction, ultraviolet-visible spectroscopy and photoluminescence spectroscopy are employed to investigate the effect of solution concentration on the structural and optical properties of the ZnO thin films. The obtained results of all thin films are discussed in detail and are compared with other experimental data.

P-Type Nitrogen-Doped ZnO Films Prepared by In-Situ Thermal Oxidation of Zn_3N_2 Films

P-type nitrogen-doped ZnO films are prepared successfully by in-situ thermal oxidation of Zn3N2 films. The prepared films are characterized by x-ray diffraction, non-Rutherford back.scattering （non-RBS） spectroscopy, x- ray photoelectron spectroscopy, and photoluminescence spectrum. The results show that the Zn3N1 films start to transform to ZnO at 400℃ and the total nitrogen content decreases with the increasing annealing temperature. The p-type fihns are achieved at 500℃ with a low resistivity of 6.33Ω.cm and a high hole concentration of ＋8.82 × 10^17 cm-3, as well as a low level of carbon contamination, indicating that the substitutional nitrogen （No） is an effective acceptor in the ZnO：N film. The photoluminescence spectra show clear UV emissions and also indicate the presence of oxygen vacancy （Vo） defects in the ZnO：N films. The p-type doping mechanism is briefly discussed.

Effect of Chromium on Structure and Tribological Properties of Hydrogenated Cr/a-C:H Films Prepared via a Reactive Magnetron Sputtering System

Hydrogenated Cr-incorporated carbon films （Cr/a-C：H） are deposited successfully by using a dc reactive mag- netron sputtering system. The structure and mechanical properties of the as-deposited Cr/a-C：H films are characterized systematically by field-emission scanning electron microscope, x-ray diffraction, Raman spectra, nanoindentation and scratch. It is shown that optimal Cr metal forms nanocrystalline carbide to improve the hardness, toughness and adhesion strength in the amorphous carbon matrix, which possesses relatively higher nano-hardness of 15. 7 CPa, elastic modulus of 126.8 GPa and best adhesion strength with critical load （Lc） of 36 N for the Cr/a-C：H film deposited at CH4 flow rate of 20sccm. The friction and wear behaviors of as-deposited Cr/a-C：H films are evaluated under both the ambient air and deionized water conditions. The results reveal that it can achieve superior low friction and anti-wear performance for the Cr/a-C：H film deposited at CH4 flow rate of 20sccm under the ambient air condition, and the friction coetllcient and wear rate tested in deionized water condition are relatively lower compared with those tested under the ambient air condition for each film. Superior combination of mechanical and tribological properties for the Cr/a-C：H film should be a good candidate for engineering applications.

Study of SiO_2 Films Prepared by Electron CyclotronResonant Microwave Plasma

Microwave electron cyclotron resonance plasma enhanced chemical vapor depositionwas used to grow silicon dioxide films on crystalline silicon substrate for planar optical waveguides.The relationship between plasma parameters and deposition rates was investigated, and the influ-ence of radio frequency substrate bias on properties of SiO2 films was also preliminarily studied.X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, scanning electron mi-croscopy, atomic force microscopy and elllipsometry were used to characterize the deposited films,showing that SiO2 films with good structural and optical properties prepared at low temperaturehave been achieved. They can basically meet the requirements of integrated optical waveguides.

Ni-CONTAINING CARBON FILMS PREPARED BY RF GLOW DISCHARGE DEPOSITION

Ni-containing carbon films were prepared by rf glow discharge decomposition of methane and nickel carbonyl. The deposited des contained C, Ni, H, O and small amounts of N. Nickel existed in forms of metric Ni and Ni2O3. The oxidation of nickel mainly occurred on film surface. With lower Ni contents, the film maintained the structure of DLC film. With the increase of Ni content, the films showed some crystalline features of Ni and Ni2O3.

Structure and Magnetic Properties of Fe-N Films Prepared by Dual Ion Beam Sputtering

Fe-N films were prepared on Si substrate by dual ion beam sputtering (DIBS). It is found that the crystal structure of the films varies from α-Fe, to ε-Fe2-3N, ε-Fe2-3N +γ-Fe4N, and finally γ'-Fe4N with the increase in substrate temperature (TS). The magnetic properties of the films were investigated by a vibrating sample magnetometer (VSM). The structure of the films is insensitive to the ratios of N2/Ar in main ion source(MIS), and is mainly influenced by the substrate temperature (Ts).

Exploring the growth mechanism of CuSbSe_(2)thin film prepared by electrodeposition

Copper antimony selenium(CuSbSe_(2))has advantages of adjustable band gaps from 1.09 eV to 1.2 eV,high light absorption coefficient(>105 cm-1),and low grain generation temperature(300—400℃),which is suitable for the preparation of solar cells.However,the stable range of CuSbSe_(2)(CASe)phase is narrow,which is inevitable to form Sb_(2)Se_(3)and Cu_(3)SbSe_(4)second phase during the preparation process.In this work,selenization annealing of Sb/Cu metal layer to prepare CASe thin films with pulse electrodeposition process was studied,and the growth mechanism of CASe film was analyzed.Cu and Sb reacted with Se to form Cu_(2)Se and Sb_(2)Se_(3),respectively.Then Cu_(2)Se and Sb_(2)Se_(3)further reacted to generate CASe.Since the formation temperature of Cu_(3)SbSe_(4)was lower than that of CASe,the preferential formation of Cu_(3)SbSe_(4)led to layer separation.When the annealing temperature was too high,CASe decomposed to form Cu_(3)SbSe_(3)and Sb_(2)Se_(3).Additionally,by increasing the heating rate,the separation of CASe thin films was effectively improved,and the CASe thin films with relatively high crystallinity were obtained at 360℃with heating rate of 30℃/min and selenization time of 20 min.

Effects of oxygen partial pressure on optical absorption edge and UV emission energy of ZnO films

The optical absorption edge and ultraviolet (UV) emission energy of ZnO films deposited by direct current (DC) reactive magnetron sputtering at room temperature have been investigated. With the oxygen ratio increasing, the structure of films changes from zinc and zinc oxide coexisting phase to single-phase ZnO and finally to the highly (002) orientation. Both the grain size and the stress of ZnO film vary with the oxygen partial pressure. Upon increasing the oxygen partial pressure in the growing ambient, the visible emission in the room-temperature photoluminescence spectra was suppressed without sacrificing the band- edge emission intensity in the ultraviolet region. The peaks of photoluminescence spectra were located at 3.06—3.15 eV. Prom optical transmittance spectra of ZnO films, the optical band gap edge was observed to shift towards shorter wavelength with the increase of oxygen partial pressure.

Nanostructure and thermal-optical properties of vanadium dioxide thin films

A novel nanopolycrystalline structure of vanadium dioxide thin films is deposited on silicon or fused silica substrates by reactive ion sputtering and followed by an annealing. The characteristic analysis＇shows that the films have a columnar nanostructure with an average grain of 8 nm. The resistivities as a function of ambient temperatures tested by four-point probes for as-deposited films present that the transition temperature for nanostructure of vanadium dioxide films is near 35 ℃ which lowers about 33 ℃ in comparison with the transition temperature at 68 ℃ in its microstructure.

Highly surface-textured and conducting ZnO:Al films fabricated from oxygen-deficient target for Cu(In, Ga)Se_2 solar cell application

Highly conducting ZnO：Al （AZO） films are normally prepared through substrate heating and post-annealing in reducing atmosphere, which is deleterious to maintain the high transparency of films and the overall solar cell performance. Here we fabricate AZO films through one-step sputtering at room temperature using oxygen-deficient targets prepared via double crucible method. The best-performed AZO film achieves a low resistivity of 4.4 x 10-4 Ω cm, a high haze factor of 35.0%, and optimizes the efficiency of Cu （In, Ga）Se2 solar cell with a high value of 14.15%. This letter demonstrates that oxygen deficiency can induce high surface texture, conductivitw and boost solar cell performance.