期刊文献+
共找到2篇文章
< 1 >
每页显示 20 50 100
Dynamic Responses of A Semi-Type Offshore Floating Wind Turbine During Normal State and Emergency Shutdown 被引量:5
1
作者 胡志强 李良 +2 位作者 王晋 胡秋皓 沈马成 《China Ocean Engineering》 SCIE EI CSCD 2016年第1期97-112,共16页
This paper addresses joint wind-wave induced dynamic responses of a semi-type offshore floating wind turbine(OFWT) under normal states and fault event conditions. The analysis in this paper is conducted in time doma... This paper addresses joint wind-wave induced dynamic responses of a semi-type offshore floating wind turbine(OFWT) under normal states and fault event conditions. The analysis in this paper is conducted in time domain, using an aero-hydro-servo-elastic simulation code-FAST. Owing to the unique viscous features of the reference system, the original viscous damping model implemented in FAST is replaced with a quadratic one to gain an accurate capture of viscous effects. Simulation cases involve free-decay motion in still water, steady motions in the presence of regular waves and wind as well as dynamic response in operational sea states with and without wind. Simulations also include the cases for transient responses induced by fast blade pitching after emergency shutdown. The features of platform motions, local structural loads and a typical mooring line tension force under a variety of excitations are obtained and investigated. 展开更多
关键词 offshore floating wind turbine dynamic responses semi-type aerodynamic effects effective RAO emergency shutdown
下载PDF
A fully on-chip fast-transient NMOS low dropout voltage regulator with quasi floating gate pass element 被引量:2
2
作者 Han Wang Chao Gou Kai Luo 《Journal of Semiconductors》 EI CAS CSCD 2017年第4期88-93,共6页
This paper presents a fully on-chip NMOS low-dropout regulator(LDO) for portable applications with quasi floating gate pass element and fast transient response.The quasi floating gate structure makes the gate of the... This paper presents a fully on-chip NMOS low-dropout regulator(LDO) for portable applications with quasi floating gate pass element and fast transient response.The quasi floating gate structure makes the gate of the NMOS transistor only periodically charged or refreshed by the charge pump,which allows the charge pump to be a small economical circuit with small silicon area.In addition,a variable reference circuit is introduced enlarging the dynamic range of error amplifier during load transient.The proposed LDO has been implemented in a 0.35 μm BCD process.From experimental results,the regulator can operate with a minimum dropout voltage of 250 mV at a maximum 1 A load and Iq of 395 μA.Under full-range load current step,the voltage undershoot and overshoot of the proposed LDO are reduced to 50 and 26 mV,respectively. 展开更多
关键词 quasi floating gate variable reference circuit transient response low-dropout regulator(LDO)
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部