Preparation and Characterization of Transparent Conductive Zinc Doped Tin Oxide Thin Films Prepared by Radio-frequency Magnetron Sputtering

High transparent and conductive thin films of zinc doped tin oxide （ZTO） were deposited on quartz substrates by the radio-frequency （RF） magnetron sputtering using a 12 wt% ZnO doped with 88 wt% SnO2 ceramic target.The effect of substrate temperature on the structural,electrical and optical performances of ZTO films has been studied.X-ray diffraction （XRD） results show that ZTO films possess tetragonal rutile structure with the preferred orientation of （101）.The surface morphology and roughness of the films was investigated by the atomic force microscope （AFM）.The electrical characteristic （including carrier concentration,Hall mobility and resistivity） and optical transmittance were studied by the Hall tester and UV- VIS,respectively.The highest carrier concentration of -1.144×1020 cm-3 and the Hall mobility of 7.018 cm2（V ·sec）-1 for the film with an average transmittance of about 80.0% in the visible region and the lowest resistivity of 1.116×10-2 Ω·cm were obtained when the ZTO films deposited at 250 oC.

Preparation,Characterization and Electronic Properties of Fluorine-doped Tin Oxide Films

Tin oxide（SnO2） and fluorine doped tin oxide（FTO） films were prepared on glass substrates by sol-gel spin-coating using SnCl4 and NH4F precursors.Fluorine doping concentration was fixed at 4 at%and 20 at%by controlling precursor sol composition.Films exhibited the tetragonal rutile-type crystal structure regardless of fluorine concentration.Uniform and highly transparent FTO films,with more than 85%of optical transmittance,were obtained by annealing at 600℃.Florine doping of films was verified by analyzing the valence band region obtained by XPS.It was found that the fluorine doping affects the shape of valence band of SnO2 films.In addition,it was observed that the band gap of SnO2 is reduced as well as the Fermi level is upward shifted by the effect of fluorine doping.

Influence of the sputtering pressure on the properties of transparent conducting zirconium-doped zinc oxide films prepared by RF magnetron sputtering

Transparent conducting zirconium-doped zinc oxide films with high transparency and relatively low resistivity have been successfully prepared on water-cooled glass substrate by radio frequency magnetron sputtering at room temperature. The Ar sputtering pressure was varied from 0.5 to 3 Pa. The crystallinity increases and the electrical resistivity decreases when the sputtering pressure increases from 0.5 to 2.5 Pa. The cystallinity decreases and the electrical resistivity increases when the sputtering pressure increases from 2.5 to 3 Pa. When the sputtering pressure is 2.5 Pa, it is obtained that the lowest resistivity is 2.03 x 10^-3Ω .cm with a very high transmittance of above 94%. The deposited films are polycrystalline with a hexagonal structure and a preferred orientation perpendicular to the substrate.

Influence of the distance between target and substrate on the properties of transparent conducting Al-Zr co-doped zinc oxide thin films

Highly transparent and conducting Al-Zr co-doped zinc oxide （ZAZO） thin films were successfully prepared on glass substrate by direct current （DC） magnetron sputtering at room temperature. The distance between target and substrate was varied from 45 to 70 mm. All the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. The crystallinity increases obviously and the electrical resistivity decreases when the distance between target and substrate decreases from 70 to 50 mm. However, as the distance decreases further, the crystallinity decreases and the electrical resistivity increases. When the distance between target and substrate is 50 ram, it is found that the lowest resistivity is 6.9 × 10^-4Ω cm. All the deposited films show a high average transmittance of above 92% in the visible range.

Enhancement and Optimization of ATO Nano-crystalline Films Properties by the Addition of Acetylacetone as Modifier in the Sol-gel Process

Sb-doped Sn O2(ATO) thin films have been prepared using the spin coating method by selecting the proper amount of acetylacetone as solution modifier. All ATO powders and films exhibited the cassiterite rutile-like structure in a crystal size below 10 nm under all the experimental conditions and a nonpreviously reported crystal structure was observed at high acetylacetone loads. The acetylacetone molar ratio influenced notably the optical and electrical properties of ATO films. When prepared at an acetylacetone molar ratio of 4, ATO films exhibited optical transparencies above 90% in the visible region and above 40% in the UV region for thicknesses of 100 and 300 nm. Films in a thickness of 100 nm and at an annealing temperature of 650 ℃ accounted for a high transparency of 97% in the visible wavelength. Films prepared at an acetylacetone molar ratio of 4 exhibited an electric resistivity of 1.33×10-3 Ω·cm at an annealing temperature of 650 ℃. The optimal Sb content for ATO films was found to be 8 at%. The relationships among the properties of starting solutions, the experimental parameters, and properties of ATO films are discussed.

Fabrication and properties of ZAO powder,sputtering target materials and the related films

Aluminum-doped zinc oxide （ZnO：Al）, abbreviated as ZAO, is a novel and widely used transparent conductive material. The ZAO powder was synthesized by chemical coprecipitation. The ZAO ceramic sputtering target materials were fabricated by sintering in air, and ZAO transparent conductive films were prepared by RF magnetron sputtering on glass substrates. XRD proved that such films had an orientation of （002） crystal panel paralleled to the surface of the glass substrate. The average transmittance of the films in the visible region exceeded 80%.

The effect of the multi-period on the properties of deep-ultraviolet transparent conductive Ga_2O_3/ITO alternating multilayer films

Ga2O3/ITO alternating multilayer films were deposited on quartz glass substrates by rnagnetron sputtering. The effect of the multi-period on the structural, optical and electrical properties of Ga2O3/ITO alternating multilayer films was investigated by an X-ray diffractometer, a double beam spectrophotometer and the Hall system, respectively. A low sheet resistance of 225.5 Ω/□ and a high transmittance of more than 62.9% at a 300 nm wavelength were obtained for the two-period alternating multilayer film with a thickness of 72 nm.

射频磁控溅射工艺参数对掺钨氧化铟锡透明导电薄膜性能的影响

ITO薄膜是目前应用最为广泛的透明导电薄膜,通过在ITO中掺杂其他金属可以进一步改善ITO薄膜的光学和电学性能。本文采用射频(RF)磁控溅射法制备了掺钨氧化铟锡(ITO∶W)透明导电薄膜,研究了薄膜厚度、表面形貌、晶体结构以及光学和电学性能与各溅射参数之间的关系。当溅射功率大于40 W时,制备的ITO∶W薄膜为方铁锰矿结构的多晶薄膜,此时薄膜表面光滑平整而且具有良好的结晶性。在基板温度320℃、溅射功率80 W、溅射时间15 min、工作气压0.6 Pa条件下得到了光学和电学性能优良的ITO∶W薄膜,其方块电阻为10.5Ω/、电阻率为4.41×10^(-4)Ω·cm,对应的载流子浓度为2.23×10^(20)cm^(-3)、迁移率为27.3 cm^(2)·V^(-1)·s^(-1)、可见光(400~700 nm)范围内平均透射率为90.97%。此外,本研究还发现通过调节基板温度影响氧元素的状态可以改变ITO∶W薄膜的电学性能。

Electrical and optical properties of deep ultraviolet transparent conductive Ga_2O_3/ITO films by magnetron sputtering

Ga2O3/ITO films were prepared by magnetron sputtering on quartz glass substrates. The transmittance and sheet resistance of ITO films and Ga2O3/ITO films were measured by using a double beam spectrophotometer and four point probes. The effect of the ITO layer and Ga2O3 layer thickness on the electrical and optical properties of Ga2O3/ITO hi-layer films were investigated in detail. Ga2O3 （50 nm）/ITO （23 nm） films exhibited a low sheet resistance of 323 Ω/□ and high deep ultraviolet transmittance of 77.6% at a wavelength of 280 nm. The ITO layer controls the ultraviolet transmittance and sheet resistance of Ga2O3/ITO films. The Ga2O3 layer thickness has a marked effect on the transmission spectral shape of Ga2O3/ITO films in the violet spectral region.

Effect of substrate temperature on the properties of deep ultraviolet transparent conductive ITO/Ga_2O_3 films

ITO/Ga2O3 bi-layer films were deposited on quartz glass substrates by magnetron sputtering. The effect of substrate temperature on the structure, surface morphology, optical and electrical properties of ITO/Ga2O3 films was investigated by an X-ray diffractometer, a scanning electron microscope, a double beam spectrophotometer and the Hall system, respectively. The structural characteristics showed a dependence on substrate temperature. The resistivity of the films varied from 6.71 × 10^-3 to 1.91× 10^-3 Ω·cm as the substrate temperature increased from 100 to 350℃. ITO （22 nm）/Ga2O3 （50 nm） films deposited at 300℃ exhibited a low sheet resistance of 373.3 Ω/□ and high deep ultraviolet transmittance of 78.97% at the wavelength of 300 nm.

Preparation and characterization of transparent conducting ZnO:W films by DC magnetron sputtering

Tungsten-doped zinc oxide（ZnO：W） films with low resistivity and high transmittance were successfully deposited on glass substrates by direct current magnetron sputtering at low temperature.The deposition pressure is varied from 12 to 21 Pa.The X-ray diffraction results show that all of the deposited films are polycrystalline and have a hexagonal structure with a preferred c-axis orientation.The crystallinity,morphologies and resistivity of ZnO：W films greatly depend on deposition pressure while the optical properties including optical transmittance, optical band gap as well as refractive index are not sensitive to deposition pressure.The deposited films with an electrical resistivity as low as 1.5×10^（-4）Ω·cm,sheet resistance of 6.8Ω/□and an average transmittance of 91.3% in the visible range were obtained at a deposition pressure of 21 Pa and sputtering power of 130 W.

Thickness dependence of the properties of transparent conducting ZnO:Zr films deposited on flexible substrates by RF magnetron sputtering

Transparent conducting zirconium-doped zinc oxide （ZnO：Zr） thin films with high transparency, low resistivity and good adhesion were successfully prepared on water-cooled flexible substrates （polyethylene glycol terephthalate, PET） by RF magnetron sputtering. The structural, electrical and optical properties of the films were studied for different thicknesses in detail. X-ray diffraction （XRD） and scanning electron microscopy （SEM） revealed that all the deposited films are polycrystalline with a hexagonal structure and a preferred orientation perpendicular to the substrate. The lowest resistivity achieved is 1.55 × 10-3 Ω·cm for a thickness of 189 nm with a Hall mobility of 17.6 cm2/（V·s） and a carrier concentration of 2.15×1020 cm-3. All the films present a high transmittance of above 90% in the wavelength range of the visible spectrum.

喷雾热解法制备SnO_2:Sb透明导电薄膜

采用喷雾热解技术制备出了光电性能优良的SnO_2:Sb透明导电薄膜,对薄膜的结构特性、光电性质以及制备条件对薄膜性能的影响进行了研究。并进一步研究了喷雾热解法中薄膜的形成过程和工艺参数对薄膜微观结构和性能的影响。实验结果表明:在Sb掺杂量为11％(摩尔分数)和基板温度为500℃的条件下,SnO_2:Sb薄膜具有最佳的光电性能,平均可见光透过率为82％,方块电阻达13.4Ω/□,电阻率为4.9×10^(-4)Ω·cm。

磁控溅射沉积掺锡氧化铟透明导电薄膜的光电性能研究

采用直流磁控溅射技术在玻璃衬底上制备了掺锡氧化铟(ITO)透明导电薄膜,通过XRD、XPS、四探针仪和分光光度计等测试方法,研究了沉积速率对ITO薄膜微观结构和光电性能的影响。实验结果表明:ITO样品为具有(222)择优取向的立方锰铁矿结构,其晶体结构和光电性能明显受到沉积速率的影响。当沉积速率为4 nm/min时,所制备的ITO薄膜具有最大的晶粒尺寸(32.5 nm)、最低的电阻率(1.1×10-3Ω.cm)、最高的可见光区平均透过率(86.4%)和最大的优良指数(7.9×102S.cm-1),其光电综合性能最佳。同时采用Tauc法则计算了ITO薄膜的光学能隙,结果显示沉积速率增大时,ITO薄膜的光学能隙单调减小。

衬底温度对直流磁控溅射法沉积ZnO∶Ti薄膜性能的影响

利用直流磁控溅射工艺,在石英玻璃衬底上沉积出了具有高度C轴择优取向的掺Ti氧化锌(ZnO∶Ti,TZO)透明导电薄膜。研究了衬底温度对TZO薄膜应力、结构和光电性能的影响。结果表明,衬底温度对TZO薄膜的结构、应力和电阻率有重要影响。TZO薄膜为六角纤锌矿结构的多晶薄膜。在衬底温度为100℃时,实验获得的TZO薄膜电阻率具有最小值2.95×10-4Ω.cm,400℃时薄膜出现孪晶,随着温度的升高,薄膜应力具有减小的趋势。实验制备的TZO薄膜附着性能良好,可见光区平均透过率都超过91%。

氧化物半导体透明导电薄膜的最佳掺杂含量理论计算

以铝掺杂氧化锌 (Al- doped Zn O,简称 AZO)和锡掺杂氧化铟 (Sn- doped In2 O3,简称 ITO)薄膜为例 ,建立了一个氧化物半导体透明导电薄膜的最佳掺杂含量的理论表达式 ,定量计算的结果 AZO陶瓷靶材中铝含量的理论最佳值为 C≈ 2 .9894% (wt) ,ITO陶瓷靶材中锡含量的理论最佳值为 C≈ 10 .3114% (wt) ,与实验数据相符合 .

射频磁控溅射法低温制备ZnO∶Zr透明导电薄膜及特性研究

利用射频磁控溅射法在室温水冷玻璃衬底上制备出了可见光透过率高、电阻率低的掺锆氧化锌(ZnO∶Zr)透明导电薄膜。讨论了薄膜厚度对ZnO∶Zr薄膜结构、形貌、光电性能的影响。实验结果表明,厚度对ZnO∶Zr薄膜的形貌和电学性能有很大影响。SEM和XRD研究结果表明,ZnO∶Zr薄膜为六角纤锌矿结构的多晶薄膜,具有垂直于衬底方向的C轴择优取向。当厚度为300nm时,薄膜的电阻率具有最小值1.77×10-3Ω.cm。所制备薄膜具有良好的附着性能,其可见光区平均透过率超过92%。

溅射压强对低阻高透过率掺钛氧化锌透明导电薄膜的影响

利用直流磁控溅射法在室温水冷玻璃衬底上制备出了高质量的掺钛氧化锌透明导电薄膜(ZnO:Ti)。研究了溅射压强对ZnO:Ti薄膜结构、形貌和光电性能的影响。研究结果表明,溅射压强对ZnO:Ti薄膜的结构和电阻率有显著影响。X射线衍射(XRD)表明,ZnO:Ti薄膜为六角纤锌矿结构的多晶薄膜,且具有c轴择优取向。在溅射压强为5.0Pa时,实验获得的ZnO:Ti薄膜电阻率最小值为1.084×10-4Ω.cm。实验制备的ZnO:Ti薄膜具有良好的附着性能,可见光区平均透过率超过91%。ZnO:Ti薄膜可以用作薄膜太阳能电池和液晶显示器的透明电极。

衬底温度对直流磁控溅射法制备掺锆氧化锌透明导电薄膜性能的影响(英文)

利用直流磁控溅射法在石英衬底上制备出了高透明导电的掺锆氧化锌(ZnO:Zr)薄膜。研究了衬底温度对ZnO:Zr薄膜结构、形貌及光电性能的影响。XRD表明实验中制备的ZnO:Zr为六方纤锌矿结构的多晶薄膜,具有垂直于衬底方向的c轴择优取向。实验所制备ZnO:Zr薄膜的晶化程度和导电性能对衬底温度有很强的依赖性。当衬底温度为300℃时,ZnO:Zr薄膜具有最小电阻率7.58×10-4Ω.cm,其可见光平均透过率超过了91%。

In掺杂和退火对磁控溅射制备ZnO薄膜的结构和光电性质的影响

用射频磁控溅射技术在石英玻璃衬底上制备出ZnO和In掺杂的ZnO(ZnO∶In)薄膜,研究了In的掺杂和退火对薄膜的结构和光电性质的影响。所制备的薄膜为纤锌矿结构的ZnO相,In的掺杂有利于ZnO薄膜的c轴择优生长,并且使其表面更加致密平整,退火提高了薄膜的结晶行为,但使得薄膜的表面有部分团聚形成。由于In3+替代了Zn2+,提供了一个多余的电子,ZnO薄膜的电阻率从28.9Ω.cm降低到4.3×10-3Ω.cm。由于载流子浓度的增加和晶格尺寸的拉长,In的掺杂使得ZnO薄膜的禁带宽度增加;空气中退火后薄膜的载流子浓度降低和晶格尺寸的减小,使得禁带宽度降低。ZnO薄膜在可见光范围的透光率在90%以上,受In的掺杂和退火的影响不大。室温下用325 nm的激发光源测试了样品的光致发光(PL)谱,发现In的掺杂对薄膜的PL谱影响不大,而退火后的ZnO薄膜在446 nm处的蓝光发射明显增强,更适合于作为蓝色发光器件。