Synthesis of Poly[(3-octanoylpyrrole-2,5-diyl)-p-(N,N-dimethylamino)benzylidene] and Its Properties by Nitrogen Ion Implantation

A novel soluble π-conjugated polymer, poly[(3-octanoylpyrrole-2,5-diyl)-p-(N,N-dimethylamino)benzylidene](POPDMABE), was synthesized firstly by the condensation of 3-octanoylpyrrole with para-dimethylaminobenzaldehyde. The chemical structure of the polymer was characterized by FTIR and 1H NMR spectrometries. The polymer is a potential nonlinear optical(NLO) material. According to the function of optical forbidden band gap(E_g) and photon energy(hν), the optical forbidden band gaps of the polymer before and after ion implantation were calculated. The resonant third-order nonlinear optical properties of POPDMABE before and after ion implantation were also studied by using the degenerate four-wave mixing(DFWM) technique at 532 nm. When the energy is 25 keV and the dose is 2.2×10 17 ions/cm 2, the {polymer′s} optical forbidden band gap is about 1.63 eV which is smaller than that of the non-implanted sample(1.98 eV) and the resonant third-order NLO susceptibility of POPDMABE is about 4.3×10 -7 esu, 1 order of magnitude higher than that of the non-implanted sample(4.1×10 -8 esu). The results show that nitrogen ion implantation is an effective method to improve the resonant third-order NLO property of the polymer.

Design and analysis of doped left-handed materials

We devise three sorts of doped left-handed materials （DLHMs） by introducing inductors and capacitors into the traditional left-handed material （LHM） as heterogeneous elements. Some new properties are presented through finitedifference time-domain （FDTD） simulations. On the one hand, the resonance in the traditional LHM is weakened and the original pass band is narrowed by introducing inductors. On the other hand, the original pass band of the LHM can be shifted and a new pass band can be generated by introducing capacitors. When capacitors and inductors are introduced simultaneously, the resonance of traditional LHM is somewhat weakened and the number of original pass bands as well as its bandwidth can be changed.

Formula for average energy required to produce a secondary electron in an insulator

Based on a simple classical model specifying that the primary electrons interact with the electrons of a lattice through the Coulomb force and a conclusion that the lattice scattering can be ignored, the formula for the average energy required to produce a secondary electron （ε） is obtained. On the basis of the energy band of an insulator and the formula for e, the formula for the average energy required to produce a secondary electron in an insulator （εi） is deduced as a function of the width of the forbidden band （Eg） and electron affinity X. Experimental values and the εi values calculated with the formula are compared, and the results validate the theory that explains the relationships among Eg, X, and ei and suggest that the formula for εi is universal on the condition that the primary electrons at any energy hit the insulator.

Localization of elastic waves in one-dimensional detuned phononic crystals with flexoelectric effect

Although forbidden band effect in perfectly periodic phononic crystals(PC)is very attractive,random disordered(i.e.detuning)phenomenon is inevitable in engineering processing,thus explor-ing the effect of detuning on the wave characteristics of PC becomes a necessity.In this study,fundamental governing equa-tions and boundary conditions are derived from the principle of virtual work.Wave characteristics and localization factor of one-dimensional(1D)detuned nano-PC are investigated based on the transfer matrix method,with flexoelectric effect duly accounted for.Subsequently,with BaTiO_(3)􀀀SrTiO_(3) nano-PC taken for illustration,forbidden band properties and localization factor of 1D elastic waves in harmonic and detuned states are systematically character-ized.It is demonstrated that localization factor can characterize the energy band structure of 1D PC perfectly.Flexoelectric effect tends to widen the width of forbidden band with increasing detuning,and detuning is linearly related to the bandwidth.The forbidden band is more sensitive to flexoelectric coefficient detuning than thickness detuning.The research results provide useful theoretical guidance for designing high-frequency nanoscaled devices with the function of filtering based on band gap effect of nano-PC.

Optical Properties of One-dimensional Three-component Photonic Band Gap Structure

Theoretical study of the optical properties of one dimensional three component photonic band gap structure, which is composed of three alternating dielectric layers of different refractive indices and thickness in a unit cell, is performed. This one dimensional photonic band gap structure exhibits the transparency band and forbidden band. We find that there are several mini bands of the allowed transmission to be created within the photonic band gap region of the structure if a defect designed specially is introduced inside the structure. This characteristic is very important for some practical applications.