Owing to the characteristics of arc ion plating(AIP) technique, the structure and composition of TiAlN films can be tailored by controlling of various parameters such as compositions of target materials, N2 partial pr...Owing to the characteristics of arc ion plating(AIP) technique, the structure and composition of TiAlN films can be tailored by controlling of various parameters such as compositions of target materials, N2 partial pressure, substrate bias and so on. In this study, several titanium aluminum nitride films were deposited on 1Cr11Ni2W2MoV steel for compressor blade of areo-engine under different d.c pulse bias voltage and nitrogen partial pressure. The effects of substrate pulse bias and nitrogen partial pressure on the deposition rate, droplet formation, microstruture and elemental component of the films were investigated.展开更多
The effects of reactive gas partial pressure on droplet formation, deposition rate and change of preferred orientation of CrN and Cr2O3 coatings were studied. For CrN coatings, as nitrogen partial pressure increases, ...The effects of reactive gas partial pressure on droplet formation, deposition rate and change of preferred orientation of CrN and Cr2O3 coatings were studied. For CrN coatings, as nitrogen partial pressure increases, the number and size of droplets increases, the deposition rate initially increases obviously and then slowly, and the preferred orientation of CrN changes from high-index plane to low-index one. For Cr2O3 coatings, with the increase of oxygen partial pressure, the number and size of droplets decreases, the deposition rate decreases and the (300) becomes the preferred orientation. These differences are ascribed to the formation of CrN (with a lower melting point) and Cr2O3 (with a higher melting point) on the surface of Cr target during the deposition of CrN and Cr2O3. Complete coatings CrN or Cr2O3 film can be formed when reactive gas partial pressure gets up to 0.1 Pa. The optimized N2 partial pressure for CrN deposition is about 0.1?0.2 Pa in order to suppress the formation of droplets and the suitable O2 partial pressure for Cr2O3 deposition is approximately 0.1 Pa for the attempt to prevent the peel of the coating.展开更多
为了研究氮气气压对Ti Si N涂层显微结构与腐蚀行为的影响,采用自制多弧离子镀设备,在抛光的单晶(100)硅片与不锈钢基底上沉积Ti Si N涂层,沉积气压0.5~2.5 Pa,利用X射线衍射仪(XRD)、X射线光电子能谱(XPS)、高分辨透射电子显微镜(HRTEM...为了研究氮气气压对Ti Si N涂层显微结构与腐蚀行为的影响,采用自制多弧离子镀设备,在抛光的单晶(100)硅片与不锈钢基底上沉积Ti Si N涂层,沉积气压0.5~2.5 Pa,利用X射线衍射仪(XRD)、X射线光电子能谱(XPS)、高分辨透射电子显微镜(HRTEM)与电化学阻抗谱(EIS)表征涂层显微结构与电化学性能。结果表明:沉积的Ti Si N涂层为纳米晶-非晶复合结构,其中纳米Ti N晶体被非晶的Si3N4包围。当氮气气压从0.5 Pa升高到2.5 Pa之后,Ti Si N涂层晶粒尺寸由19.5 nm减小到8.0 nm。电化学阻抗随着氮气气压升高先增大后逐渐下降,沉积气压为1.0 Pa时,涂层抗腐蚀性能最强。展开更多
文摘Owing to the characteristics of arc ion plating(AIP) technique, the structure and composition of TiAlN films can be tailored by controlling of various parameters such as compositions of target materials, N2 partial pressure, substrate bias and so on. In this study, several titanium aluminum nitride films were deposited on 1Cr11Ni2W2MoV steel for compressor blade of areo-engine under different d.c pulse bias voltage and nitrogen partial pressure. The effects of substrate pulse bias and nitrogen partial pressure on the deposition rate, droplet formation, microstruture and elemental component of the films were investigated.
基金Projects (59971052 50401022) supported by the National Natural Science Foundation of China
文摘The effects of reactive gas partial pressure on droplet formation, deposition rate and change of preferred orientation of CrN and Cr2O3 coatings were studied. For CrN coatings, as nitrogen partial pressure increases, the number and size of droplets increases, the deposition rate initially increases obviously and then slowly, and the preferred orientation of CrN changes from high-index plane to low-index one. For Cr2O3 coatings, with the increase of oxygen partial pressure, the number and size of droplets decreases, the deposition rate decreases and the (300) becomes the preferred orientation. These differences are ascribed to the formation of CrN (with a lower melting point) and Cr2O3 (with a higher melting point) on the surface of Cr target during the deposition of CrN and Cr2O3. Complete coatings CrN or Cr2O3 film can be formed when reactive gas partial pressure gets up to 0.1 Pa. The optimized N2 partial pressure for CrN deposition is about 0.1?0.2 Pa in order to suppress the formation of droplets and the suitable O2 partial pressure for Cr2O3 deposition is approximately 0.1 Pa for the attempt to prevent the peel of the coating.
文摘为了研究氮气气压对Ti Si N涂层显微结构与腐蚀行为的影响,采用自制多弧离子镀设备,在抛光的单晶(100)硅片与不锈钢基底上沉积Ti Si N涂层,沉积气压0.5~2.5 Pa,利用X射线衍射仪(XRD)、X射线光电子能谱(XPS)、高分辨透射电子显微镜(HRTEM)与电化学阻抗谱(EIS)表征涂层显微结构与电化学性能。结果表明:沉积的Ti Si N涂层为纳米晶-非晶复合结构,其中纳米Ti N晶体被非晶的Si3N4包围。当氮气气压从0.5 Pa升高到2.5 Pa之后,Ti Si N涂层晶粒尺寸由19.5 nm减小到8.0 nm。电化学阻抗随着氮气气压升高先增大后逐渐下降,沉积气压为1.0 Pa时,涂层抗腐蚀性能最强。
