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The sensitivity of the array resistivity log to mud filtrate invasion and its primary five-parameter inversion for improved oil water recognition 被引量:3
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作者 Deng Shaogui Sun Qingtao +2 位作者 Li Hu Huo Ningning He Xuquan 《Petroleum Science》 SCIE CAS CSCD 2012年第3期295-302,共8页
In order to improve reservoir fluid recognition, the sensitivity of array resistivity response to the difference of the invasion properties in both oil-bearing layers and water layers is analyzed. Then the primary inv... In order to improve reservoir fluid recognition, the sensitivity of array resistivity response to the difference of the invasion properties in both oil-bearing layers and water layers is analyzed. Then the primary inversion is carried out based on the array resistivity log. The mud invasion process is numerically simulated based on the oil-water flow equation and water convection diffusion equation. The results show that the radial resistivity of a fresh mud-invaded oil-bearing layer presents complex distribution characteristics, such as nonlinear increase, increasing to decreasing and low resistivity annulus, and the resistive invasion profile of a water layer is monotonic. Under specific conditions, array resistivity log can reflect these changes and the array induction log is more sensitive. Nevertheless, due to the effect of factors like large invasion depth, reservoir physical and oil-bearing properties, the measured apparent resistivity may differ greatly from the actual mud filtrate invasion profile in an oil-bearing layer. We proposed a five-parameter formation model to simulate the complex resistivity distribution of fresh mud-invaded formation. Then, based on the principle of non-linear least squares, the measured array resistivity log is used for inversion with the Marquardt method. It is demonstrated that the inverted resistivity is typically non-monotonic in oil-bearing layers and is monotonic in water layers. Processing of some field data shows that this is helpful in achieving efficient reservoir fluid recognition. 展开更多
关键词 Oil-water recognition mud filtrate invasion array resistivity log five-parameter inversion model
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A Simplified Simulation Procedure and Analysis of a Photovoltaic Solar System Using a Single Diode Model
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作者 Robinson Ndegwa Elijah Ayieta +1 位作者 Justus Simiyu Nicodemus Odero 《Journal of Power and Energy Engineering》 2020年第9期65-93,共29页
A single diode model for a photovoltaic solar module is the most ideal and quick way of analyzing the module characteristics before implementing them in a solar plant. Solar modules manufacturers provide information f... A single diode model for a photovoltaic solar module is the most ideal and quick way of analyzing the module characteristics before implementing them in a solar plant. Solar modules manufacturers provide information for three critical points that are essential in I-V, P-V or P-I curves. In this study, we propose four separate simulation procedures to estimate the five-model parameters of an analogous single diode equivalent circuit by utilizing three cardinal points of the photovoltaic module I-V curve, described from experimental data using a solar simulator and manufacturer’s datasheet. The main objective is to extract and use the five unknown parameters of a single diode model to describe the photovoltaic system using I-V ad P-V plots under different environmental conditions. The most influential parameters that greatly alter the cardinal points defined at short circuit point (SCP), the maximum power point (MPP) and the open circuit point(OCP) are the ideality factor (</span><i><span style="font-family:Verdana;">n</span></i><span style="font-family:Verdana;">) and the diode saturation current (</span><i><span style="font-family:Verdana;">I<sub>o</sub></span></i><span style="font-family:Verdana;">). For a quick and fast convergence, we have determined the optimal ideality factor (</span><i><span style="font-family:Verdana;">n<sub>o</sub></span></i><span style="font-family:Verdana;">) and optimal saturation current (</span><i><span style="font-family:Verdana;">I<sub>oopt</sub></span></i><span style="font-family:Verdana;">) as the primary parameters by first assuming the optimal values of </span><i><span style="font-family:Verdana;">R<sub>sh</sub></span></i><span style="font-family:Verdana;">, </span><i><span style="font-family:Verdana;">R<sub>s</sub> </span></i><span style="font-family:Verdana;">and </span><i><span style="font-family:Verdana;">I<sub>ph</sub> </span></i><span style="font-family:Verdana;">at standard test conditions (STC). Further, we evaluated the effects of </span><i><span style="font-family:Verdana;">I<sub>ph</sub></span></i><span style="font-family:Verdana;">, </span><i><span style="font-family:Verdana;">R<sub>s</sub> </span></i><span style="font-family:Verdana;">and </span><i><span style="font-family:Verdana;">R<sub>sh</sub> </span></i><span style="font-family:Verdana;">on I-V and P-V curves by considering the values of </span><i><span style="font-family:Verdana;">n </span></i><span style="font-family:Verdana;">below </span><i><span style="font-family:Verdana;">n</span><sub><span style="font-family:Verdana;">o</span></sub></i><span style="font-family:Verdana;">. We have evaluated different iterative procedures of determining </span><i><span style="font-family:Verdana;">R<sub>sh</sub> </span></i><span style="font-family:Verdana;">and </span><i><span style="font-family:Verdana;">R<sub>s</sub> </span></i><span style="font-family:Verdana;">at open-circuit, short-circuit point and the maximum-power points. These procedures have been classified into four approaches that guarantees positive shunt and series resistance for </span><i><span style="font-family:Verdana;">n </span></i><span style="font-family:Verdana;">≤</span><i><span style="font-family:Verdana;"> n<sub>o</sub></span></i><span style="font-family:Verdana;">. These approaches have been categorized by deriving the saturation current as a dependent variable at each cardinal point with or without </span><i><span style="font-family:Verdana;">R<sub>s</sub> </span></i><span style="font-family:Verdana;">and </span><i><span style="font-family:Verdana;">R<sub>sh</sub> </span></i><span style="font-family:Verdana;">pair. The values obtained for the five parameters have been used to simulate the photovoltaic solar module characteristic curves with great precision at different air temperatures and irradiances, considering the effect of Nominal Operating Cell Temperature (NOCT). 展开更多
关键词 five-parameter model Ideality Factor Saturation Current Series and Shunt Resistances
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