Low-Power Three-Stage Amplifier Using Active-Feedback Miller Capacitor and Serial RC Frequency Compensation

A low-power three-stage amplifier for driving large capacitive load is proposed. The feedback path formed by the active-feedback Miller capacitor leads to a high frequency complex-pole but a high Q-value, which significantly deteriorates the stability of the amplifier. The serial RC stage introduced as the second stage output load can optimize the resistor Rz and the capacitor Cz under fixed power and small compensation capacitor Ca, which brings about a suitable Q-value of the complex-pole and the gain-bandwidth product extension of the amplifier. The amplifiers were designed and implemented in a standard 65 nm CMOS process with capacitive loads of 500 p F and 2 n F, respectively. The post-layout simulation results show that the amplifier driving the 500 p F capacitive load can achieve a gain of 113 d B, a phase margin of 50.6° and a gain-bandwidth product of 5.22 MHz while consuming 24 μW from a 1.2 V supply. For the 2 n F capacitive load, the amplifier has a gain of 102 d B, a phase margin of 52.8°, a gain-bandwidth product of 4.41 MHz and a power of 43 μW. The total compensation capacitors are equal to 1.13 p F and 1.03 p F. The better figures-of-merits are 108 750 and 205 113(MHz×p F/m W). The layout areas are 0.064 mm×0.026 mm and 0.063 mm×0.027 mm. Compared with the CFCC scheme, the gainbandwidth product is extended by 1.6 times at CL=500 p F and Ca=1.1 p F.

Amplified Spontaneous Emission in Single Frequency Double-Clad Fiber Power Amplifiers

Amplified spontaneous emission （ASE） in diode laser pumped double-clad fiber power amplifiers is studied experimentally, The dependences of ASE on fiber length and cross section of active core are discussed and the variations of ASE power as the function of pumping and signal power are investigated. There are indications that long fibers with large mode area need stronger input signals to suppress ASE. It is shown that a 150 mW input signal can suppress the ASE by 40 dB in a 4 m large mode area fiber, while to efficiently suppress the ASE in a 10 m fiber, stronger input signal is needed. 12.5 W and 16.1 W single frequency CW output power are obtained from 4 m fiber and 10 m fiber respectively. No stimulated Brillouin scattering （SBS） was observed

Einstein-Podolsky-Rosen entanglement in time-dependent broadband pumping frequency non-degenerate optical parametric amplifier

This paper investigates quantum fluctuations characteristic of time-dependent broadband pumping frequency non-degenerate optical parametric amplifier for below and above threshold regions. It finds that a high squeezing and entanglement can be achieved.

Design Technologies for Silicon-Based High-Efficiency RF Power Amplifiers:A Brief Overview

This paper presents a brief overview of several promising design technologies for high efficiency silicon-based radio frequency （RF） power amplifiers （PAs） as well as the use of these technologies in mobile broadband wireless communications. Four important aspects of PA design are addressed in this paper. First, we look at class-E PA design equations and provide an example of a class-E PA that achieves efficiency of 65-70% at 2.4 GHz. Then, we discuss state-of-the-art envelope tracking （ET） design for monolithic wideband RF mobile transmitter applications. A brief overview of Doherty PA design for the next-generation wireless handset applications is then given. Towards the end of the paper, we discuss an inherently broadband and highly efficient class-J PA design targeting future multi-band multi-standard wireless communication protocols.

All-fiber,high power single-frequency linearly polarized ytterbium-doped fiber amplifier

We report an all-fiber high power,single frequency large-mode area （LMA） linearly polarized ytterbiumdoped fiber amplifiers （YDFA） module,which is based on the master oscillator multi-stage power amplifiers （MOPA）.The maximum output power is 43.8 W at a wavelength of 1064 nm when 60-W launched pump light is coupled,with high slope efficiency of 88%,polarization extinction rate （PER） 17.2 dB and nearly diffraction-limited beam quality （M 2 1.1）.

Frequency up-conversion imaging with 60-dB gain using picosecond optical parametric amplifier

A weak infrared （IR） image amplifier with more than 60-dB optical gain and is developed from a picosecond （PS） 355-nm pumped gated optical parametric frequency up-conversion amplifier （OPA） in a/% BaB204 （BBO） crystal. The IR image at 1064 nm is amplified and up-converted into the visible region at 532 nm by parametric amplification and up-conversion. With the optimized optical gain, the lowest detectable energy of the image can be as low as 1.8 femto-Joule per pulse, which is three orders of magnitude lower than the detection limit of a charge-coupled device （CCD） camera. The transversal resolution of the OPA imaging is investigated, and the approaches for higher detection sensitivity and higher transversal resolution are proposed.

An RF power amplifier with inter-metal-shuffled capacitor for inter-stage matching in a digital CMOS process

One challenge of the implementation of fully-integrated RF power amplifiers into a deep submicro digital CMOS process is that no capacitor is available,especially no high density capacitor.To address this problem,a two-stage class-AB power amplifier with inter-stage matching realized by an inter-metal coupling capacitor is designed in a 180-nm digital CMOS process.This paper compares three structures of inter-metal coupling capacitors with metal-insulator-metal（MIM） capacitor regarding their capacitor density.Detailed simulations are carried out for the leakage,the voltage dependency,the temperature dependency,and the quality factor between an inter-metal shuffled（IMS） capacitor and an MIM capacitor.Finally,an IMS capacitor is chosen to perform the inter-stage matching.The techniques are validated via the design and implement of a two-stage class-AB RF power amplifier for an UHF RFID application.The PA occupies 370 × 200 μm^2 without pads in the 180-nm digital CMOS process and outputs 21.1 dBm with 40% drain efficiency and 28.1 dB power gain at 915 MHz from a single 3.3 V power supply.

A low-noise widely tunable Gm-C filter with frequency calibration

A fourth-order Gm-C Chebyshev low-pass filter is presented as channel selection filter for reconfigurable multi-mode wireless receivers. Low-noise technologies are proposed in optimizing the noise characteristics of both the Gm cells and the filter topology. A frequency tuning strategy is used by tuning both the transconductance of the Gm cells and the capacitance of the capacitor banks. To achieve accurate cut-off frequencies, an on-chip calibration circuit is presented to compensate for the frequency inaccuracy introduced by process variation. The filter is fabricated in a 0.13 m CMOS process. It exhibits a wide programmable bandwidth from 322.5 k Hz to20 MHz. Measured results show that the filter has low input referred noise of 5.9 n V/（Hz）^（1/2） and high out-of-band IIP3 of 16.2 d Bm. It consumes 4.2 and 9.5 m W from a 1 V power supply at its lowest and highest cut-off frequencies respectively.

22 nm In0.75Ga0.25As channel-based HEMTs on InP/GaAs substrates for future THz applications

In this work,the performance of Lg = 22 nm In（0.75）Ga（0.25）As channel-based high electron mobility transistor（HEMT） on InP substrate is compared with metamorphic high electron mobility transistor（MHEMT） on GaAs substrate.The devices features heavily doped In（0.6）Ga（0.4）As source/drain（S/D） regions,Si double δ-doping planar sheets on either side of the In（0.75）Ga（0.25） As channel layer to enhance the transconductance,and buried Pt metal gate technology for reducing short channel effects.The TCAD simulation results show that the InP HEMT performance is superior to GaAs MHEMT in terms of fT,f（max） and transconductance（g（mmax））.The 22 nm InP HEMT shows an fT of 733 GHz and an f（max） of 1340 GHz where as in GaAs MHEMT it is 644 GHz and 924 GHz,respectively.InGaAs channel-based HEMTs on InP/GaAs substrates are suitable for future sub-millimeter and millimeter wave applications.

A VHF RFPGA with adaptive phase-correction technique

This paper presents a VHF（30-300 MHz） RF programmable gain amplifier（PGA） with an adaptive phase correction technique.The proposed technique effectively mitigates phase errors over the VHF band,and the RFPGA as a whole satisfies all the specifications of the China mobile multimedia broadcasting VHF band applications.The RFPGA is implemented with a TSMC 0.25μm CMOS process.Measurement results reveal a gain range of around 61 dB,an ⅡP3 of-7 dBm at maximum gain,a power consumption of 10.2 mA at maximum gain,and a phase imbalance of less than 0.3 degrees.