Effects of interface roughness on photoluminescence full width at half maximum in GaN/AlGaN quantum wells

Low temperature photoluminescence （PL） measurements have been performed for a set of GaN/AlxGal xN quantum wells （QWs）. The experimental results show that the optical full width at half maximum （FWHM） increases relatively rapidly with increasing A1 composition in the AlxGal xN barrier, and increases only slightly with increasing GaN well width. A model considering the interface roughness is used to interpret the experimental results. In the model, the FWHM＇s broadening caused by the interface roughness is calculated based on the triangle potential well approximation. We find that the calculated results accord with the experimental results well.

The double coupled microwave resonance probes and application for diagnosing atmospheric pressure plasma jet

The double-coupled microwave resonance probe(DMRP)based on the hairpin probe is proposed for diagnosing atmospheric plasma jet(ne<1017 m-3).In this work,the resonance characteristics of DMRP are investigated by numerical simulation.It shows that two resonance peaks on the reflectance spectrum can be observed,and influenced significantly by some parameters,such as the probe separation,the distance to the handheld radio frequency atmospheric pressure glow discharge plasma jet(RF-APGDPJ)and the plasma electron density less than 1017 m-3.Based on two resonance modes of DMRP,the electron densities in the afterglow of RF-APGDPJ at the different rf powers and helium flow rates are diagnosed experimentally by matching the change of FWHM(Df1-Df1,airand Df2-Df2,air)measured by vector network analyzer with the simulated relation between the FWHM changes and the plasma density.

Pressure effect study on the Ⅰ-Ⅴ property of the GaAs-based resonant tunnelling structure by photoluminescence measurement

This paper discusses the I-V property of the GaAs-based resonant tunnelling structure （RTS） under external uniaxial pressure by photoluminescence studies. Compressive pressure parallel to the [110] direction, whose value is determined by Hooke＇s law, is imposed on the sample by a helix micrometer. With the increase of the applied external uniaxial compressive pressure, the blue shift and splitting of the luminescence peaks were observed, which have some influence on the I-V curve of RTS from the point of view of the energy gap, and the splitting became more apparent with applied pressure. Full width at half maximum broadening could also be observed.

Edge method for measuring source spot-size and its principle

The edge method is used to measure the source spot-size. In this paper, the measuring principle and applying range are discussed. It is shown that the method can directly be used to measure the spot-size of either light source, or low-energy x-ray source, or x-ray source with an energy higher than 250 keV.

Quantum simulation for peak broadening in atom lithography

A grating structure with period of half of the laser wavelength generated by focusing Cr atoms with nearly resonant laser standing wave atom lens was simulated using a quantum-mechanical model. The influence of thermal atomic source on atom focusing, including the statistical distribution of the longitudinal velocity and the beam divergence, was discussed. The background and full-width at half-maximum （FWHM） of atomic density peaks with vz in Maxwell distribution and vx0 in Gaussian distribution increase significantly compared with ideal atoms. Collimating atoms with laser cooling is necessary to decrease the peak broadening.

Quantitative Analysis of Graphene Sheet Content in Wood Char Powders during Catalytic Pyrolysis

The quantitative characterization of the graphene sheet content in carbon-containing materials is arguable and has not yet been developed. The authors report on a feasible method to characterize graphene sheet content quantitatively in pyrolized carbon materials using an X-ray diffraction （XRD） spectrometer. A direct carbonation at 300℃ followed by catalytic pyrolysis （heat-treatment temperature was set at 700-1400 ℃） under a vacuum condition was used for turning wood waste into pyrolized wood char powders. The graphene content in the samples was calculated through an analysis of full width at half maximum （FWHM） of the carbon （100） crystal plane at around 42°-43° in XRD. Results showed that the FWHM and the calculated graphene sheet content of pyrolized wood char powders depended on the heat-treatment temperature, and the FWHM of wood char powder with well-developed graphene sheets （100%） was determined to be 5.0. In addition, the trend to 100% graphene sheet-contained pyrolized carbon powder was obtained at a heattreatment temperature of 2700 ℃. The resistivity of the wood char powder with 100% graphene sheets was predicted to be 0.01 Ω cm, close to our experimental data of 0.012 and 0.006 Ω cm for commercial graphite and graphene products, respectively.

基于调控Cr^(3+)锐线发射带宽的柔性光纤温度传感器

我们设计并制备了一种基于LiGa_(4)(MgGe)_(0.5)O_(8):Cr荧光粉变温发光特性的柔性温度传感光纤.通常来说,随着温度的升高,发光材料基质的电子-声子作用将加剧,这会导致其发射峰的半高宽(FWHM)在升温时不断加宽.在本工作中,随着LiGa_(5-x)(MgGe)_(x)O_(8):Cr中[Mg^(2+)-Ge^(4+)]化学单元成分比例的增加,荧光粉近红外发光的FWHM出现明显展宽,其外量子效率也从24.8%增加到50.0%.进一步研究发现,LiGa_(4)-(MgGe)_(0.5)O_(8):Cr纳米荧光粉的发光具有优异的热稳定性和温度传感特性,在443 K时绝对灵敏度可达7.51 cm^(-1)K^(-1),303 K下相对灵敏度为0.64%K^(-1).基于此,我们搭建了具有可重复性、高精度和优异稳定性的柔性全光纤系统,并将其用于实时监测物体的温度.本研究不仅探索了具有锐线发射的Cr^(3+)掺杂发光材料的应用,而且丰富了基于荧光材料带宽特性的光学测温新思路.

Powder synthesis and spectroscopic properties of ytterbium-doped yttrium oxysulfide

Ytterbium-doped yttrium oxysulfide （Yb：Y2O2S） has been synthesized by solid-state reaction with sulfide flux. Diffuse reflection and emission spectra have been measured in order to determine the crystal field splitting of Yb^3＋ ion in the YOS lattice. According to the crystal-field levels probed in the spectra, the crystal field splitting of 2F7/2 manifold of Yb^3＋ ion in YOS is 709 cm^-1, which is large enough for the quasi-three-level laser operation of Yb^3＋ ion. Emission peak position, width, full-width at half maximum （FWHM）, and normalized intensity of Yb：YOS are fitted from its emission spectrum. For comparison, relevant data of 5.4 at.-% Yb：YAG is also provided.

High-strain InGaAs/GaAs quantum well grown by MOCVD

High-strain InGaAs/GaAs quantum wells （QWs） are grown by low-pressure metal-organic chemical vapor deposition （LP-MOCVD）. Photoluminescence （PL） at room temperature is applied for evaluation of the optical property. The influence of growth temperature, V/III ratio, and growth rate on PL characteristic are investigated. It is found that the growth temperature and V/III ratio have strong effects on the peak wavelength and PL intensity. The full-width at half-maximum （FWHM） of PL peak increases with higher growth rate of InGaAs layer. The FWHM of the PL peak located at 1039 nm is 20.1 meV, which grows at 600 ℃ with V/ III ratio of 42.7 and growth rate of 0.96 μm/h.

Heteroepitaxial growth of InP/GaAs(100) by metalorganic chemical vapor deposition

Using two-step method InP epilayers were grown on GaAs（100） substrates by low-pressure metalorganic chemical vapor deposition （LP-MOCVD）. X-ray diffraction （XRD） and room-temperature （RT） photolu- minescence （PL） were employed to characterize the quality of InP epilayer. The best scheme of growing InP/GaAs（100） heterostructures was obtained by optimizing the initial low-temperature （LT） InP growth conditions, investigating the effects of thermal cycle annealing （TCA） and strained layer superlattice （SLS） on InP epilayers. Compared with annealing, 10-periods Ga0.1In0.9P/InP SLS inserted into InP epilayers can improve the quality of epilayers dramatically, by this means, for 2.6-#m-thick heteroepitaxial InP, the full-widths at half-maximum （FWHMs） of XRD ω and ω-28 scans are 219 and 203 arcsec, respectively, the RT PL spectrum shows the band edge transition of InP, the FWHM is 42 meV. In addition, the successful growth of InP/In0.53Ga0.47As MQWs on GaAs（100） substrates indicates the quality of device demand of InP/GaAs heterostructures.

Er^(3+)-doped phosphor-tellurite glass for broadband short-length Er^(3+)-doped fiber amplifier

Er^3＋-doped phosphor-tellurite glass for broadband short-length Er^3＋-doped fiber amplifier （EDFA） is fabricated and characterized. The differential value （AT） of onset crystalline temperature （Tx） and glass transition temperature （Tg） is 206 ℃. The stimulated emission cross section of Er^3＋ is calculated from absorption spectrum by McCumber theory and is 0.87 × 10 ^-20 cm^2 at 1532 nm. A broad 1.5-μm fluorescence spectrum with 54-nm full-width at half maximum （FWHM） is demonstrated. Especially, the maximum phonon energy of undoped phosphor-tellurite glass is 1100 cm^- 1, which restricts the upconversion luminescence. It is possible to pump efficiently at 980 nm. These results indicate Er^3＋-doped phosphor-tellurite glass is suitable for fabricating broadband short-length EDFA.

Toward one nanometer X-ray focusing: a complex refractive lens design

We report a design for one nanometer X-ray focusing by a complex refractive lens, which is capable of focusing 20 keV X-rays down to a lateral size of 0.92 nm （full-width at half-maximum （FWHM）） and an axial size of 98 nm （FWHM） with intensity gain of 49050. This complex refractive lens is comprised of a series of kinoform lenses, whose aperture is gradually matched to the converging trace of the X-ray beam so as to increase the numerical aperture （NA）. The theoretical principle of the proposed complex refractive lens is presented. The NAs of these lenses are calculated. The numerical simulation results demonstrate that the proposed design can focus the X-ray beam into sub-nanometer while remaining high gain.