Dopants and defects are important in semiconductor and magnetic devices. Strategies for controlling doping and defects have been the focus of semiconductor physics research during the past decades and remain critical ...Dopants and defects are important in semiconductor and magnetic devices. Strategies for controlling doping and defects have been the focus of semiconductor physics research during the past decades and remain critical even today. Co-doping is a promising strategy that can be used for effectively tuning the dopant populations, electronic properties, and magnetic properties. It can enhance the solubility of dopants and improve the stability of desired defects. During the past 20 years, significant experimental and theoretical efforts have been devoted to studying the characteristics of co-doping. In this article, we first review the historical development of co-doping. Then, we review a variety of research performed on co-doping, based on the compensating nature of co-dopants. Finally, we review the effects of contamination and surfactants that can explain the general mechanisms of co-doping.展开更多
A low power digital operational transconductance amplifier （OTA） was developed for low voltage switched capacitor applications. The OTA has a high slew rate （SR） and a large open loop gain with a dif- ferential ps...A low power digital operational transconductance amplifier （OTA） was developed for low voltage switched capacitor applications. The OTA has a high slew rate （SR） and a large open loop gain with a dif- ferential pseudo-two-stage Class-AB structure. A fully compensated depletion mode capacitor is used in the switched capacitor common mode feedback block instead of a metal-insulator-metal （MIM） capacitor to reduce the fabrication cost. Simulations show that with a 1.0-V supply voltage and a 34-pF load at each output terminal, this digital differential pseudo-two-stage Class-AB OTA realized in 0.13-μm technology achieves a 63.5-dB DC gain and a 0.83-V output swing. The slew rate is ±16.29V/μs and the total power dissipation is only 82 μW.展开更多
文摘Dopants and defects are important in semiconductor and magnetic devices. Strategies for controlling doping and defects have been the focus of semiconductor physics research during the past decades and remain critical even today. Co-doping is a promising strategy that can be used for effectively tuning the dopant populations, electronic properties, and magnetic properties. It can enhance the solubility of dopants and improve the stability of desired defects. During the past 20 years, significant experimental and theoretical efforts have been devoted to studying the characteristics of co-doping. In this article, we first review the historical development of co-doping. Then, we review a variety of research performed on co-doping, based on the compensating nature of co-dopants. Finally, we review the effects of contamination and surfactants that can explain the general mechanisms of co-doping.
基金Supported by the National Natural Science Foundation of China(No.60236020)the Specialized Research Fund for the Doctoral Program of Higher Education (No.20050003083)
文摘A low power digital operational transconductance amplifier （OTA） was developed for low voltage switched capacitor applications. The OTA has a high slew rate （SR） and a large open loop gain with a dif- ferential pseudo-two-stage Class-AB structure. A fully compensated depletion mode capacitor is used in the switched capacitor common mode feedback block instead of a metal-insulator-metal （MIM） capacitor to reduce the fabrication cost. Simulations show that with a 1.0-V supply voltage and a 34-pF load at each output terminal, this digital differential pseudo-two-stage Class-AB OTA realized in 0.13-μm technology achieves a 63.5-dB DC gain and a 0.83-V output swing. The slew rate is ±16.29V/μs and the total power dissipation is only 82 μW.
