A low-power three-stage amplifier for driving large capacitive load is proposed. The feedback path formed by the active-feedback Miller capacitor leads to a high frequency complex-pole but a high Q-value, which signif...A low-power three-stage amplifier for driving large capacitive load is proposed. The feedback path formed by the active-feedback Miller capacitor leads to a high frequency complex-pole but a high Q-value, which significantly deteriorates the stability of the amplifier. The serial RC stage introduced as the second stage output load can optimize the resistor Rz and the capacitor Cz under fixed power and small compensation capacitor Ca, which brings about a suitable Q-value of the complex-pole and the gain-bandwidth product extension of the amplifier. The amplifiers were designed and implemented in a standard 65 nm CMOS process with capacitive loads of 500 p F and 2 n F, respectively. The post-layout simulation results show that the amplifier driving the 500 p F capacitive load can achieve a gain of 113 d B, a phase margin of 50.6° and a gain-bandwidth product of 5.22 MHz while consuming 24 μW from a 1.2 V supply. For the 2 n F capacitive load, the amplifier has a gain of 102 d B, a phase margin of 52.8°, a gain-bandwidth product of 4.41 MHz and a power of 43 μW. The total compensation capacitors are equal to 1.13 p F and 1.03 p F. The better figures-of-merits are 108 750 and 205 113(MHz×p F/m W). The layout areas are 0.064 mm×0.026 mm and 0.063 mm×0.027 mm. Compared with the CFCC scheme, the gainbandwidth product is extended by 1.6 times at CL=500 p F and Ca=1.1 p F.展开更多
This study presents a theoretical investigation of a novel Ge/Si tunneling avalanche photodiode（TAPD）with an ultra-thin barrier layer between the absorption and p＋ contact layer. A high-frequency tunneling effect i...This study presents a theoretical investigation of a novel Ge/Si tunneling avalanche photodiode（TAPD）with an ultra-thin barrier layer between the absorption and p＋ contact layer. A high-frequency tunneling effect is introduced into the structure of the barrier layer to increase the high-frequency response when frequency is larger than 0.1 GHz, and the-3 dB bandwidth of the device increases evidently. The results demonstrate that the avalanche gain and-3 dB bandwidth of the TAPD can be influenced by the thickness and bandgap of the barrier layer.When the barrier thickness is 2 nm and the bandgap is 4.5 eV, the avalanche gain loss is negligible and the gainbandwidth product of the TAPD is 286 GHz, which is 18% higher than that of an avalanche photodiode without a barrier layer. The total noise in the TAPD was an order of magnitude smaller than that in APD without barrier layer.展开更多
Today, along with the prevalent use of portable equipment, wireless, and other battery powered systems, the demand for amplifiers with a high gain-bandwidth product（GBW）, slew rate（SR）, and at the same time very l...Today, along with the prevalent use of portable equipment, wireless, and other battery powered systems, the demand for amplifiers with a high gain-bandwidth product（GBW）, slew rate（SR）, and at the same time very low static power dissipation is growing. In this work, an operational transconductance amplifier（OTA） with an enhanced SR is proposed. By inserting a sensing resistor in the input port of the current mirror in the OTA, the voltage drop across the resistor is converted into an output current containing a term in proportion to the square of the voltage, and then the SR of the proposed OTA is significantly enhanced and the current dissipation can be reduced. The proposed OTA is designed and simulated with a 0.5μm complementary metal oxide semiconductor（CMOS） process. The simulation results show that the SR is 4.54V/μs, increased by 8.25 times than that of the conventional design, while the current dissipation is only 87.3%.展开更多
基金Supported by the Tianjin Science and Technology Project(No.13ZCZDGX02000)
文摘A low-power three-stage amplifier for driving large capacitive load is proposed. The feedback path formed by the active-feedback Miller capacitor leads to a high frequency complex-pole but a high Q-value, which significantly deteriorates the stability of the amplifier. The serial RC stage introduced as the second stage output load can optimize the resistor Rz and the capacitor Cz under fixed power and small compensation capacitor Ca, which brings about a suitable Q-value of the complex-pole and the gain-bandwidth product extension of the amplifier. The amplifiers were designed and implemented in a standard 65 nm CMOS process with capacitive loads of 500 p F and 2 n F, respectively. The post-layout simulation results show that the amplifier driving the 500 p F capacitive load can achieve a gain of 113 d B, a phase margin of 50.6° and a gain-bandwidth product of 5.22 MHz while consuming 24 μW from a 1.2 V supply. For the 2 n F capacitive load, the amplifier has a gain of 102 d B, a phase margin of 52.8°, a gain-bandwidth product of 4.41 MHz and a power of 43 μW. The total compensation capacitors are equal to 1.13 p F and 1.03 p F. The better figures-of-merits are 108 750 and 205 113(MHz×p F/m W). The layout areas are 0.064 mm×0.026 mm and 0.063 mm×0.027 mm. Compared with the CFCC scheme, the gainbandwidth product is extended by 1.6 times at CL=500 p F and Ca=1.1 p F.
基金Project supported by in part by the National Natural Science Foundation of China(Nos.61534005,61675195)the Beijing Science and Technology Commission(No.Z151100003315019)the Natural Science Foundation of Beijing Municipality(No.4162063)
文摘This study presents a theoretical investigation of a novel Ge/Si tunneling avalanche photodiode（TAPD）with an ultra-thin barrier layer between the absorption and p＋ contact layer. A high-frequency tunneling effect is introduced into the structure of the barrier layer to increase the high-frequency response when frequency is larger than 0.1 GHz, and the-3 dB bandwidth of the device increases evidently. The results demonstrate that the avalanche gain and-3 dB bandwidth of the TAPD can be influenced by the thickness and bandgap of the barrier layer.When the barrier thickness is 2 nm and the bandgap is 4.5 eV, the avalanche gain loss is negligible and the gainbandwidth product of the TAPD is 286 GHz, which is 18% higher than that of an avalanche photodiode without a barrier layer. The total noise in the TAPD was an order of magnitude smaller than that in APD without barrier layer.
基金supported in part by the National Natural Science Foundation of China under Grant No.61274027the National Key Laboratory of Analog Integrated Circuit under Grant No.9140c90503140c09048
文摘Today, along with the prevalent use of portable equipment, wireless, and other battery powered systems, the demand for amplifiers with a high gain-bandwidth product（GBW）, slew rate（SR）, and at the same time very low static power dissipation is growing. In this work, an operational transconductance amplifier（OTA） with an enhanced SR is proposed. By inserting a sensing resistor in the input port of the current mirror in the OTA, the voltage drop across the resistor is converted into an output current containing a term in proportion to the square of the voltage, and then the SR of the proposed OTA is significantly enhanced and the current dissipation can be reduced. The proposed OTA is designed and simulated with a 0.5μm complementary metal oxide semiconductor（CMOS） process. The simulation results show that the SR is 4.54V/μs, increased by 8.25 times than that of the conventional design, while the current dissipation is only 87.3%.
