Experimental Study on Inert Gas-assisted Laser Cut Veneer Based on LOM

Based on the LOM(Laminated Object Manufacturing)process,an inert gas-assisted laser method for wood cutting was proposed.The carbonization degree of wood surface was improved by the introduction of helium(He)gas,and the influence of process parameters on the carbonization layer of wood surface was solved,it was significance to reduce the post-processing of LOM and improve the quality of forming workpiece.The cherry wood veneer was used as the experimental material,under the condition of the same process parameters,the wood was cut with or without inert gas-assisted,and the influence factors of kerf quality were studied by variance analysis.The results showed that under the same condition,compared with traditional laser processing,the kerf width was obviously reduced in the inert gas-assisted cutting.Because the He gas had oxygen-isolation and flame retardant effect,which prevented heat accumulation and conduction.The micro morphology of the kerf surface showed that the flatness was better in the inert gas-assisted cutting.As the excess heat was blown out by the cooling and purging of the gas,the phenomenon of oxidation and burning was reduced,the range of HAZ(heat affected zone)was reduced,and the carbonization phenomenon was obviously improved.The surface quality of kerf was improved effectively.According to the analysis of variance,in addition to the effect of laser power,cutting speed and inert gas flow on the cutting width,the interaction between inert gas flow and laser power,laser power and cutting speed were also the main factors which affected the cutting width.The feasibility of the combined inert gas and laser processing to improve wood cutting quality has been verified through experimental research,which provided a certain reference for the followup research on improving the wood processing quality.

Effect of Refresh Time on XeF2 Gas-assisted FIB Milling of GaAs

Focused ion beam (FIB) machining can be used to fabricate gallium arsenide-based devices, which have a surface fnish of several nanometers, and the FIB machining speed and surface fnish can be greatly improved using xenon difuoride (XeF2) gas-assisted etching. Although the refresh time is one of the most important parameters in the gas-assisted etching process, its efect on the machining quality of the surface fnish has rarely been studied. Therefore, in this work, we investigated the efect of the refresh time on the etching process, including the dissociation process of XeF2, the refresh time dependency of the sputter in yield under diferent incident angles, and the surface fnish under diferent refresh times. The results revealed that a selective etching mechanism occurred at diferent refresh times. At an incidence angle of 0°, the sputtering yield increased with the refresh time and reached its maximum value at 500 ms;at an incidence angle of 30°, the sputtering yield reached its minimum value at a refresh time of 500 ms. For surface roughness, the incident angle played a more important role than the refresh time. The surface fnish was slightly better at an incidence angle of 30° than at 0°. In addition, both F and Xe elements were detected in the processed area: Xe elements were evenly distributed throughout the processing area, while F elements tended to accumulate in the whole processing area. The results suggest that the optimum surface can be obtained when a larger refresh time is employed.