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Design Concept for Key Parameters of Reverse Conducting GCT 被引量:2
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作者 王彩琳 高勇 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2004年第10期1243-1248,共6页
Presented is design concept for key parameters o f the reverse conducting gate commutated thyristor (RC-GCT),such as the thickness and concentration of n-base region and the transparent anode region,and the wi dth o... Presented is design concept for key parameters o f the reverse conducting gate commutated thyristor (RC-GCT),such as the thickness and concentration of n-base region and the transparent anode region,and the wi dth of separation region between asymmetric GCT and PIN diode.A structure model of the RC-GCT is set up based on the design concept and its characteristics are analyzed.The simulation results show the design concept is reasonable. 展开更多
关键词 power semiconductor device reverse con ducting gate commutated thyristor transparent anode separation region
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