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Current-collapse suppression and leakage-current decrease in AlGaN/GaN HEMT by sputter-TaN gate-dielectric layer
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作者 Bosen Liu Guohao Yu +12 位作者 Huimin Jia Jingyuan Zhu Jiaan Zhou Yu Li Bingliang Zhang Zhongkai Du Bohan Guo Lu Wang Qizhi Huang Leifeng Jiang Zhongming Zeng Zhipeng Wei Baoshun Zhang 《Journal of Semiconductors》 EI CAS CSCD 2024年第7期70-75,共6页
In this paper, we explore the electrical characteristics of high-electron-mobility transistors(HEMTs) using a TaN/AlGaN/GaN metal insulating semiconductor(MIS) structure. The high-resistance tantalum nitride(TaN) film... In this paper, we explore the electrical characteristics of high-electron-mobility transistors(HEMTs) using a TaN/AlGaN/GaN metal insulating semiconductor(MIS) structure. The high-resistance tantalum nitride(TaN) film prepared by magnetron sputtering as the gate dielectric layer of the device achieved an effective reduction of electronic states at the TaN/AlGaN interface, and reducing the gate leakage current of the MIS HEMT, its performance was enhanced. The HEMT exhibited a low gate leakage current of 2.15 × 10^(-7) mA/mm and a breakdown voltage of 1180 V. Furthermore, the MIS HEMT displayed exceptional operational stability during dynamic tests, with dynamic resistance remaining only 1.39 times even under 400 V stress. 展开更多
关键词 AlGaN/GaN MIS HEMTs gate dielectric layer DEPLETION-MODE gate reliability I_(on)/I_(off)ratio
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High-performance enhancement-mode AlGaN/GaN MOS-HEMTs with fluorinated stack gate dielectrics and thin barrier layer
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作者 高涛 徐锐敏 +6 位作者 张凯 孔月婵 周建军 孔岑 郁鑫鑫 董迅 陈堂胜 《Journal of Semiconductors》 EI CAS CSCD 2016年第6期112-115,共4页
We present high-performance enhancement-mode AlGaN/GaN metal-oxide-semiconductor highelectron mobility transistors(MOS-HEMTs) by a fluorinated gate dielectric technique.A nanolaminate of an Al_2O_3/La_xAl_(1-x)O_3... We present high-performance enhancement-mode AlGaN/GaN metal-oxide-semiconductor highelectron mobility transistors(MOS-HEMTs) by a fluorinated gate dielectric technique.A nanolaminate of an Al_2O_3/La_xAl_(1-x)O_3/Al_2O_3 stack(x≈0.33) grown by atomic layer deposition is employed to avoid fluorine ions implantation into the scaled barrier layer.Fabricated enhancement-mode MOS-HEMTs exhibit an excellent performance as compared to those with the conventional dielectric-last technique,delivering a large maximum drain current of 916 mA/mm and simultaneously a high peak transconductance of 342 mS/mm.The balanced DC characteristics indicate that advanced gate stack dielectrics combined with buffered fluorine ions implantation have a great potential for high speed GaN E/D-mode integrated circuit applications. 展开更多
关键词 AlGaN/GaN enhancement-mode(E-mode) stack gate dielectrics atomic layer deposition(ALD)
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A Radiation Hardened Power Device——VDMNOSFET 被引量:1
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作者 刘英坤 梁春广 +1 位作者 王长河 李思渊 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2001年第7期841-845,共5页
A radiation hardened N channel Si power device——VDMNOSFET (Vertical Double Diffused Metal Nitride Oxide Semiconductor Field Effect Transistor) is fabricated by using a double layer (Si 3N 4 SiO 2) gate dielec... A radiation hardened N channel Si power device——VDMNOSFET (Vertical Double Diffused Metal Nitride Oxide Semiconductor Field Effect Transistor) is fabricated by using a double layer (Si 3N 4 SiO 2) gate dielectric and a self aligned heavily doped shallow P + region.The effects of ionizing radiation and transient high dose rate radiation of the power VDMNOSFET are also presented.Good radiation hardening performance is obtained,compared with the conventional power VDMOSFET.For the specified 200V VDMNOSFET,the threshold voltage shifts is only -0 5V at a Gamma dose of 1Mrad(Si) with +10V gate bias;the transconductance is degraded by 10% at a Gamma dose of 1Mrad(Si);and no burnout failures occur at the transient high dose rate of 1×10 12 rad(Si)/s.It is demonstrated that the ionizing radiation tolerance and burnout susceptibilities of the power MOSFET are improved significantly by using a double layer (Si 3N 4 SiO 2) gate dielectric and a self aligned heavily doped shallow P + region. 展开更多
关键词 radiation hardening double layer gate dielectric power VDMNOSFET
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