We present an approach of GaAs MESFET incorporating the gate engineering effect to improve immunity against the short channel effects in order to enhance the scaling capability and the device performance for microwave...We present an approach of GaAs MESFET incorporating the gate engineering effect to improve immunity against the short channel effects in order to enhance the scaling capability and the device performance for microwave frequency applications. In this context, a physics-based model for I–V characteristics and various microwave characteristics such as transconductance, cut-off frequency and maximum frequency of oscillation of submicron triple material gate（TM） GaAs MESFET are developed. The reduced short channel effects have also been discussed in combined designs i.e. TM, DM and SM in order to show the impact of our approach on the GaAs MESFETs-based device design. The proposed analytical models have been verified by their good agreement with 2D numerical simulations. The models developed in this paper will be useful for submicron and microwave analysis for circuit design.展开更多
文摘We present an approach of GaAs MESFET incorporating the gate engineering effect to improve immunity against the short channel effects in order to enhance the scaling capability and the device performance for microwave frequency applications. In this context, a physics-based model for I–V characteristics and various microwave characteristics such as transconductance, cut-off frequency and maximum frequency of oscillation of submicron triple material gate（TM） GaAs MESFET are developed. The reduced short channel effects have also been discussed in combined designs i.e. TM, DM and SM in order to show the impact of our approach on the GaAs MESFETs-based device design. The proposed analytical models have been verified by their good agreement with 2D numerical simulations. The models developed in this paper will be useful for submicron and microwave analysis for circuit design.
