A 0. 1μm SOI grooved gate pMOSFET with 5.6nm gate oxide is fabricated and demonstrated. The groove depth is 180nm. The transfer characteristics and the output characteristics are shown. At Vds = -1. 5V,the drain satu...A 0. 1μm SOI grooved gate pMOSFET with 5.6nm gate oxide is fabricated and demonstrated. The groove depth is 180nm. The transfer characteristics and the output characteristics are shown. At Vds = -1. 5V,the drain saturation current is 380μA and the off-state leakage current is 1.9nA;the sub-threshold slope is 115mV/dec at Vds = -0. 1V and DIBL factor is 70. 7mV/V. The electrical characteristic comparison between the 0.1μm SOI groovedgate pMOSFET and the 0. 1μm bulk grooved gate one with the same process demonstrates that a 0. 1μm SOI grooved gate pMOSFET has better characteristics in current-driving capability and sub-threshold slope.展开更多
Grooved gate structure Metal-Oxide-Semiconductor (MOS) device is consideredas the most promising candidate used in deep and super-deep sub-micron region, for it cansuppress hot carrier effect and short channel effect ...Grooved gate structure Metal-Oxide-Semiconductor (MOS) device is consideredas the most promising candidate used in deep and super-deep sub-micron region, for it cansuppress hot carrier effect and short channel effect deeply. Based on the hydrodynamic energytransport model, using two-dimensional device simulator Medici, the relation between structureparameters and hot carrier effect immunity for deep-sub-micron N-channel MOSFET's is studiedand compared with that of counterpart conventional planar device in this paper. The examinedstructure parameters include negative junction depth, concave corner and effective channel length.Simulation results show that grooved gate device can suppress hot carrier effect deeply even indeep sub-micron region. The studies also indicate that hot carrier effect is strongly influencedby the concave corner and channel length for grooved gate device. With the increase of concavecorner, the hot carrier effect in grooved gate MOSFET decreases sharply, and with the reducingof effective channel length, the hot carrier effect becomes large.展开更多
文摘A 0. 1μm SOI grooved gate pMOSFET with 5.6nm gate oxide is fabricated and demonstrated. The groove depth is 180nm. The transfer characteristics and the output characteristics are shown. At Vds = -1. 5V,the drain saturation current is 380μA and the off-state leakage current is 1.9nA;the sub-threshold slope is 115mV/dec at Vds = -0. 1V and DIBL factor is 70. 7mV/V. The electrical characteristic comparison between the 0.1μm SOI groovedgate pMOSFET and the 0. 1μm bulk grooved gate one with the same process demonstrates that a 0. 1μm SOI grooved gate pMOSFET has better characteristics in current-driving capability and sub-threshold slope.
基金Supported by the National Defense Preresearch Fund Program(No.99J8.1.1.DZD132)
文摘Grooved gate structure Metal-Oxide-Semiconductor (MOS) device is consideredas the most promising candidate used in deep and super-deep sub-micron region, for it cansuppress hot carrier effect and short channel effect deeply. Based on the hydrodynamic energytransport model, using two-dimensional device simulator Medici, the relation between structureparameters and hot carrier effect immunity for deep-sub-micron N-channel MOSFET's is studiedand compared with that of counterpart conventional planar device in this paper. The examinedstructure parameters include negative junction depth, concave corner and effective channel length.Simulation results show that grooved gate device can suppress hot carrier effect deeply even indeep sub-micron region. The studies also indicate that hot carrier effect is strongly influencedby the concave corner and channel length for grooved gate device. With the increase of concavecorner, the hot carrier effect in grooved gate MOSFET decreases sharply, and with the reducingof effective channel length, the hot carrier effect becomes large.
