Gates joint locally connected network for accurate and robust reconstruction in optical molecular tomography

Optical molecular tomography(OMT)is a potential pre-clinical molecular imaging technique with applications in a variety of biomedical areas,which can provide non-invasive quantitative three-dimensional(3D)information regarding tumor distribution in living animals.The construction of optical transmission models and the application of reconstruction algorithms in traditional model-based reconstruction processes have affected the reconstruction results,resulting in problems such as low accuracy,poor robustness,and long-time consumption.Here,a gates joint locally connected network(GLCN)method is proposed by establishing the mapping relationship between the inside source distribution and the photon density on surface directly,thus avoiding the extra time consumption caused by iteration and the reconstruction errors caused by model inaccuracy.Moreover,gates module was composed of the concatenation and multiplication operators of three different gates.It was embedded into the network aiming at remembering input surface photon density over a period and allowing the network to capture neurons connected to the true source selectively by controlling three different gates.To evaluate the performance of the proposed method,numerical simulations were conducted,whose results demonstrated good performance in terms of reconstruction positioning accuracy and robustness.

Heat dissipation enhancement method for finned heat sink for AGV motor driver's IGBT module

With the widespread use of high-power and highly integrated insulated gate bipolar transistor(IGBT),their cooling methods have become challenging.This paper proposes a liquid cooling scheme for heavy-duty automated guided vehicle(AGV)motor driver in port environment,and improves heat dissipation by analyzing and optimizing the core component of finned heat sink.Firstly,the temperature distribution of the initial scheme is studied by using Fluent software,and the heat transfer characteristics of the finned heat sink are obtained through numerical analysis.Secondly,an orthogonal test is designed and combined with the response surface methodology to optimize the structural parameters of the finned heat sink,resulting in a 14.57%increase in the heat dissipation effect.Finally,the effectiveness of heat dissipation enhancement is verified.This work provides valuable insights into improving the heat dissipation of IGBT modules and heat sinks,and provides guidance for their future applications.

Gate-tunable high-performance broadband phototransistor array of two-dimensional PtSe_(2) on SOI

Two-dimensional(2D)layered materials have attracted extensive research interest in the field of high-performance photodetection due to their high carrier mobility,tunable bandgap,stability,other excellent properties.Herein,we propose a gate-tunable,high-performance,self-driving,wide detection range phototransistor based on a 2D PtSe_(2)on silicon-oninsulator(SOI).Benefiting from the strong built-in electric field of the PtSe_(2)/Si heterostructure,the phototransistor has a fast response time(rise/fall time)of 36.7/32.6μs.The PtSe_(2)/Si phototransistor exhibits excellent photodetection performance over a broad spectral range from ultraviolet to near-infrared,including a responsivity of 1.07 A/W and a specific detectivity of 6.60×10^(9)Jones under 808 nm illumination at zero gate voltage.The responsivity and specific detectivity of PtSe_(2)/Si phototransistor at 5 V gate voltage are increased to 13.85 A/W and 1.90×10^(10) Jones under 808 nm illumination.Furthermore,the fabricated PtSe_(2)/Si phototransistor array shows excellent uniformity,reproducibility,long-term stability in terms of photoresponse performance with negligible variation between pixel cells.The architecture of present PtSe_(2)/Si on SOI platform paves a new way of a general strategy to realize high-performance photodetectors by combining the advantages of both 2D materials and conventional semiconductors which is compatible with current Si-complementary metal oxide semiconductor(CMOS)process.

Multiple multicontrol unitary operations: Implementation and applications

The efficient implementation of computational tasks is critical to quantum computations. In quantum circuits, multicontrol unitary operations are important components. Here, we present an extremely efficient and direct approach to multiple multicontrol unitary operations without decomposition to CNOT and single-photon gates. With the proposed approach, the necessary twophoton operations could be reduced from O(n^3) with the traditional decomposition approach to O(n), which will greatly relax the requirements and make large-scale quantum computation feasible. Moreover, we propose the potential application to the(n-k)-uniform hypergraph state.