Low Gate Voltage Operated Multi-emitter-dot H^+ Ion-Sensitive Gated Lateral Bipolar Junction Transistor

A low gate voltage operated multi-emitter-dot gated lateral bipolar junction transistor （BJT） ion sensor is proposed. The proposed device is composed of an arrayed gated lateral BJT, which is driven in the metal-oxidesemiconductor field-effect transistor （MOSFET）-BJT hybrid operation mode. Further, it has multiple emitter dots linked to each other in parallel to improve ionic sensitivity. Using hydrogen ionic solutions as reference solutions, we conduct experiments in which we compare the sensitivity and threshold voltage of the multi-emitter-dot gated lateral BJT with that of the single-emitter-dot gated lateral BJT. The multi-emitter-dot gated lateral BJT not only shows increased sensitivity but, more importantly, the proposed device can be operated under very low gate voltage, whereas the conventional ion-sensitive field-effect transistors cannot. This special characteristic is significant for low power devices and for function devices in which the provision of a gate voltage is difficult.

Bias-dependent timing jitter of 1-GHz sinusoidally gated InGaAs/InP avalanche photodiode

We characterized the dependence of the timing jitter of an InGaAs/InP single-photon avalanche diode on the excess bias voltage（V（ex）） when operated in 1-GHz sinusoidally gated mode.The single-photon avalanche diode was cooled to-30 degrees Celsius.When the V（ex） is too low（0.2 V-0.8 V） or too high（3 V-4.2 V）,the timing jitter is increased with the V（ex）,particularly at high V（ex）.While at middle V（ex）（1 V-2.8 V）,the timing jitter is reduced.Measurements of the timing jitter of the same avalanche diode with pulsed gating show that this effect is likely related to the increase of both the amplitude of the V（ex） and the width of the gate-on time.For the 1-GHz sinusoidally gated detector,the best jitter of 93 ps is achieved with a photon detection efficiency of 21.4%and a dark count rate of -2.08×10 -5 per gate at the V（ex） of 2.8 V.To evaluate the whole performance of the detector,we calculated the noise equivalent power（NEP） and the afterpulse probability（P（ap））.It is found that both NEP and P（ap） increase quickly when the V（ex） is above 2.8 V.At -2.8-V V（ex）,the NEP and P（ap） are -2.06×10-（16）W/Hz-（1/2） and 7.11%,respectively.Therefore,the detector should be operated with V（ex） of 2.8 V to exploit the fast time response,low NEP and low P（ap）.

Tb(Ⅲ)functionalized MOF based self-calibrating sensor integrated with logic gate operation for efficient epinephrine detection in serum

By anchoring Tb^(3+)ions on its free carboxyl groups of the nanocaged NiMOF,a dual-emission self-calibrating sensor of Tb^(3+)@NiMOF was fabricated through coordination post-synthetic modification(PSM)strategy.With Tb^(3+)ions as the secondary fluorescent signal and sensing active sites,Tb^(3+)@NiMOF presents great potentials in visually and efficiently monitoring EPI in serum,with high sensitivity and selectivity,fast response,excellent recyclable,and the low detection limit(LOD,3.06 ng/mL).Furthermore,a tandem combinational logic gate based intelligent detection system was constructed to improve the practicability and convenience of epinephrine(EPI)detection in serum by comparing the light emitted colour with the series standard colour cards preset in the smartphone.This work provides a promising approach of developing metal-organic frameworks(MOFs)based self-calibrating sensors for intelligent detection of bioactive molecules.

Implementation of n-qubit Deutsch-Jozsa algorithm using resonant interaction in cavity QED

We propose a scheme to implement the n-qubit Deutsch-Jozsa algorithm based on resonant interaction between the atoms and a single-mode cavity. In the scheme, the resonant transitions between two ground states and one excited state of an atom are changed alternately by adjusting the cavity frequency appropriately, and the operations required to complete the algorithm can be significantly simplified following the increment of the number of qubits. The implementation of the scheme in experiment would show the full power of quantum algorithm and would be significative and important for more complicated quantum algorithm in cavity quantum electrodynamics.

Active quenching circuit for a InGaAs single-photon avalanche diode

We present a novel gated operation active quenching circuit （AQC）. In order to simulate the quenching circuit a complete SPICE model of a InGaAs SPAD is set up according to the I-V characteristic measurement resuits of the detector. The circuit integrated with a ROIC （readout integrated circuit） is fabricated in an CSMC 0.5 μm CMOS process and then hybrid packed with the detector. Chip measurement results show that the functionality of the circuit is correct and the performance is suitable for practical system applications.

Time-optimal control for hybrid systems based on the nitrogen-vacancy center

Fast and high fidelity quantum control is the key technology of quantum computing. The hybrid system composed of the nitrogen-vacancy center and nearby Carbon-13 nuclear spin is expected to solve this problem. The nitrogen-vacancy center electron spin enables fast operations for its strong coupling to the control field, whereas the nuclear spins preserve the coherence for their weak coupling to the environment. In this paper, we describe a strategy to achieve time-optimal control of the Carbon-13 nuclear spin qubit by alternating controlling the nitrogen-vacancy center electron spin as an actuator. We transform the qubit gate operation into a switched system. By using the maximum principle, we study the minimum time control of the switched system and obtain the time-optimal control of the qubit gate operation. We show that the X gate and Y gate operations are within 10μs while the fidelity reaches 0.995.