Temperature-regulation liquid gating membrane with controllable gas/liquid separation

Membrane separation technology with the ability to regulate gas/liquid transport and separation is critical for environmental fields, such as sewerage treatment, multiphase separation, and desalination. Although numerous membranes can dynamically control liquid-phase fluids transport via external stimuli, the transport and separation of gas-phase fluids remains a challenge. Here, we show a temperature-regulation liquid gating membrane that allows in-situ dynamically controllable gas/liquid transfer and multiphase separation by integrating a thermo-wettability responsive porous membrane with functional gating liquid. Experiments and theoretical analysis have demonstrated the temperature-regulation mechanism of this liquid gating system, which is based on thermo-responsive changes of porous membrane surface polarity, leading to changes in affinity between the porous membrane and the gating liquid. In addition, the sandwich configuration with dense Au-coated surfaces and heterogeneous internal components by a bistable interface design enables the liquid gating system to enhance response sensitivity and maintain working stability. This temperature-regulation gas/liquid transfer strategy expands the application range of liquid gating membranes,which are promising in environmental governance, water treatment and multiphase separation.

Development of miniaturized SAF-LIBS with high repetition rate acousto-optic gating for quantitative analysis

The self-absorption effect in laser-induced breakdown spectroscopy(LIBS)reduces the accuracy of quantitative measurement results.The self-absorption-free LIBS(SAF-LIBS)has been proved to directly capture the optically thin plasma spectra by setting an appropriate exposure time.In this work,a novel SAF-LIBS technique with high repetition rate acousto-optic gating is developed,in which an acousto-optic modulator is used as the shutter to diffract the optically thin fluorescence,and a high repetition rate laser is used to produce quasi-continuous plasmas to enhance the integral spectral intensity,so that the CCD spectrometer can replace an intensified CCD(ICCD)and echelle spectrometer in SAF-LIBS.Experimental results show that the average absolute prediction error of aluminum is reduced to 0.18%,which is equivalent to that of traditional SAF-LIBS.This technique not only effectively shields continuous background radiation and broadened spectral lines in optically thick plasma,but also has advantages of miniaturization,low cost,convenience and reliability.

Gating技术与汉语听觉词汇加工

尝试对Gating技术的实施和运用 ,对数据进行探索性分析。被试为 47名北京师范大学本科学生。实验中被试听到依次加长的单字词语音片段 ,每听完一个语音片段要尽快判断该语音是什么字音 ,并迅速写出想到的第一个符合该读音的汉字 ,同时在七点量表上评定作出判断的确定性等级。结果显示 ,Gating技术作为探讨汉语听觉词汇加工的一条途径可以提供丰富的信息 ,它不仅能得到词汇的语音识别点 (IsolationPoint ,IP) ,也揭示出它与声调存在一定关系。对错误反应的分析还表明 :声调信息可以独立于音段信息而被识别 ;即时影响声调识别的因素不一定局限于区别性特征 ;听觉词汇识别受到听觉语言特有的方向性特点的影响 ,这种影响不仅体现在音段信息。

Gating范式:探讨听觉词汇加工的途径

传统的反应时任务只能为听觉词汇加工提供定量数据,而不能提供定性信息,Gating范式的优势在于可以提供以上两种信息,使研究者能够全面、细致地了解听觉词汇加工的即时过程。而且它的适用群体广泛,可被用于研究不同年龄段的发展。文章较详细地介绍了Gating范式的基本特点及其在汉语研究中的应用,期待它被更多的研究者所认识和使用。

Gating system optimization of high pressure die casting thin-wall AlSi10MnMg longitudinal loadbearing beam based on numerical simulation

High pressure die casting(HPDC) is a kind of near net shape manufacturing method. However, air entrapment in HPDC parts has serious effects upon the casting quality. In order to reduce the air entrapment defects in a AlSi10 MnMg alloy thin-wall longitudinal load-bearing beam produced by HPDC, different gating systems were designed and simulated by software Flow-3D to evaluate the entrapped air. Simulation results showed that when the beam is produced by the original designed gating system with a middle ingate, there exist obvious air entrapments in the critical area; the volume of air entrapment was reduced by replacing the middle ingate to an overflow well, and the filling of molten metal became more stable. When the middle ingate was removed for further improvement, the volume of air entrapment was decreased drastically. The parts with glossy surface and good microstructure have been successfully produced by using the final optimized gating system based on simulation results.

Ionic-Liquid-Gating Induced Protonation and Superconductivity in FeSe,FeSe0.93S0.07, ZrNCl, 1T-TaS2 and Bi2Se3

We report protonation in several compounds by an ionic-liquid-gating method, under optimized gating conditions.This leads to single superconducting phases for several compounds. Non-volatility of protons allows post-gating magnetization and transport measurements. The superconducting transition temperature Tc is enhanced to 43.5 K for FeSe0.93S0.07, and 41 K for Fe Se after protonation. Superconducting transitions with Tc^15 K for ZrNCl,~7.2 K for 1-TaS2, and ~3.8 K for Bi2Se3 are induced after protonation. Electric transport in protonated FeSe0.93S0.07 confirms high-temperature superconductivity. Our ^1H nuclear magnetic resonance(NMR)measurements on protonated Fe Se1-xSx reveal enhanced spin-lattice relaxation rate 1/^1T1 with increasing x,which is consistent with the LDA calculations that H+ is located in the interstitial sites close to the anions.

Gating System Design for a Magnesium Alloy Casting

The gating system of a cylindrical magnesium casting has been designed by using multiple objective optimiza- tion and Taguchi method.Mold filling and solidification processes were simulated by using MAGMASOFT（？）. The simulation results indicate that the gating system design has a significant effect on the quality of magne- sium castings.In an effort to obtain the optimal design of gating system,the signal-to-noise （S/N） ratio was used to analyze the effect of various gating designs on cavity filling and casting quality by using a weighting method based on the design of an orthogonal array.Four gating system parameters,namely,ingate height, ingate width,runner height,runner width,were optimized with a consideration of multiple objective criteria including filling velocity,shrinkage porosity and product yield.

The 45 K Onset Superconductivity and the Suppression of the Nematic Order in FeSe by Electrolyte Gating

The electronic doping effect on both the superconductivity and the nematic order in the FeSe nanoflake are investigated by using the electric-double-layer transistor configuration. The superconductivity can be effectively controlled by electronic doping, and the onset superconducting transition temperature Tc reaches as high as 45 K at a gate voltage Of Vg = 4 V. Meanwhile, the nematic phase is gradually suppressed with the increase of electronic doping （or Vg）. The results provide an effective method with variable charge doping for investigation of the rich physics in the FeSe superconductor.

Convolutional neural network for transient grating frequency-resolved optical gating trace retrieval and its algorithm optimization

A convolutional neural network is employed to retrieve the time-domain envelop and phase of few-cycle femtosecond pulses from transient-grating frequency-resolved optical gating(TG-FROG) traces.We use theoretically generated TGFROG traces to complete supervised trainings of the convolutional neural networks,then use similarly generated traces not included in the training dataset to test how well the networks are trained.Accurate retrieval of such traces by the neural network is realized.In our case,we find that networks with exponential linear unit(ELU) activation function perform better than those with leaky rectified linear unit(LRELU) and scaled exponential linear unit(SELU).Finally,the issues that need to be addressed for the retrieval of experimental data by this method are discussed.

Tuning of the Electron Spin Relaxation Anisotropy via Optical Gating in GaAs/AlGaAs Quantum Wells

The carrier-density-dependent spin relaxation dynamics for modulation-doped GaAs/Al0.3 Gao,TAs quantum wells is studied using the time-resolved magneto-Kerr rotation measurements. The electron spin relaxation time and its in-plane anisotropy are studied as a function of the optically injected electron density, Moreover, the relative strength of the Rashba and the Dresselhaus spin-rbit coupling fields, and thus the observed spin relaxation time anisotropy, is further tuned by the additional excitation of a 532nm continuous wave laser, demonstrating an effective spin relaxation manipulation via an optical gating method.

Controlling a sine wave gating single-photon detector by exploiting its filtering loophole

GHz single-photon detector （SPD） is a crucial part in the practical high speed quantum key distribution （QKD） system. However, any imperfections in a practical QKD system may be exploited by an eavesdropper （Eve） to collect information about the key without being discovered. The sine wave gating SPD （SG-SPD） based on InGaAs/InP avalanche photodiode, one kind of practical high speed SPD, may also contain loopholes. In this paper, we study the principle and characteristic of the SG-SPD and find out the filtering loophole of the SG-SPD for the first time. What is more, the proof-of-principle experiment shows that Eve could blind and control Bob＇s SG-SPD by exploiting this loophole. We believe that giving enough attention to this loophole can improve the practical security of the existing QKD system. GHz single-photon detector （SPD） is a crucial part in the practical high speed quantum key distribution （QKD） system. However, any imperfections in a practical QKD system may be exploited by an eavesdropper （Eve） to collect information about the key without being discovered. The sine wave gating SPD （SG-SPD） based on InGaAs/InP avalanche photodiode, one kind of practical high speed SPD, may also contain loopholes. In this paper, we study the principle and characteristic of the SG-SPD and find out the filtering loophole of the SG-SPD for the first time. What is more, the proof-of-principle experiment shows that Eve could blind and control Bob＇s SG-SPD by exploiting this loophole. We believe that giving enough attention to this loophole can improve the practical security of the existing QKD system.

Electrostatic gating of solid-ion-conductor on InSe flakes and InSe/h-BN heterostructures

We report the electrical transport properties of InSe flakes electrostatically gated by a solid ion conductor.The large tuning capability of the solid ion conductor as gating dielectric is confirmed by the saturation gate voltage as low as^1 V and steep subthreshold swing(83 mV/dec).The p-type conduction behavior of InSe is obtained when negative gate voltages are biased.Chemical doping of the solid ion conductor is suppressed by inserting a buffer layer of hexagonal boron nitride(h-BN)between InSe and the solid-ion-conductor substrate.By comparing the performance of devices with and without h-BN,the capacitance of solid ion conductors is extracted to be the same as that of^2 nm h-BN,and the mobility of InSe on solid ion conductors is comparable to that on the SiO2 substrate.Our results show that solid ion conductors provide a facile and powerful method for electrostatic doping.

Effects of fractal gating of potassium channels on neuronal behaviours

The classical model of voltage-gated ion channels assumes that according to a Markov process ion channels switch among a small number of states without memory, but a bunch of experimental papers show that some ion channels exhibit significant memory effects, and this memory effects can take the form of kinetic rate constant that is fractal. Obviously the gating character of ion channels will affect generation and propagation of action potentials, furthermore, affect generation, coding and propagation of neural information. However, there is little previous research on this series of interesting issues. This paper investigates effects of fractal gating of potassium channel subunits switching from closed state to open state on neuronal behaviours. The obtained results show that fractal gating of potassium channel subunits switching from closed state to open state has important effects on neuronal behaviours, increases excitability, rest potential and spiking frequency of the neuronal membrane, and decreases threshold voltage and threshold injected current of the neuronal membrane. So fractal gating of potassium channel subunits switching from closed state to open state can improve the sensitivity of the neuronal membrane, and enlarge the encoded strength of neural information.

Full-Blind Delegating Private Quantum Computation

The delegating private quantum computation(DQC)protocol with the universal quantum gate set{X,Z,H,P,R,CNOT}was firstly proposed by Broadbent et al.[Broadbent(2015)],and then Tan et al.[Tan and Zhou(2017)]tried to put forward a half-blind DQC protocol(HDQC)with another universal set{H,P,CNOT,T}.However,the decryption circuit of Toffoli gate(i.e.T)is a little redundant,and Tan et al.’s protocol[Tan and Zhou(2017)]exists the information leak.In addition,both of these two protocols just focus on the blindness of data(i.e.the client’s input and output),but do not consider the blindness of computation(i.e.the delegated quantum operation).For solving these problems,we propose a full-blind DQC protocol(FDQC)with quantum gate set{H,P,CNOT,T},where the desirable delegated quantum operation,one of{H,P,CNOT,T},is replaced by a fixed sequence(H,P,CZ,CNOT,T)to make the computation blind,and the decryption circuit of Toffoli gate is also optimized.Analysis shows that our protocol can not only correctly perform any delegated quantum computation,but also holds the characteristics of data blindness and computation blindness.

Wavelength-dependence of double optical gating for attosecond pulse generation

Both polarization gating （PG） and double optical gating （DOG） are productive methods to generate single attosecond （as） pulses. In this paper, considering the ground-state depletion effect, we investigate the wavelength-dependence of the DOG method in order to optimize the generation of single attosecond pulses for the future application. By calculating the ionization probabilities of the leading edge of the pulse at different driving laser wavelengths, we obtain the upper limit of duration for the driving laser pulse for the DOG setup. We find that the upper limit duration increases with the increase of laser wavelength. We further describe the technical method of choosing and calculating the thickness values of optical components for the DOG setup.

Ionic liquid gating control of planar Hall effect in Ni80Fe20/HfO2 heterostructures

We report a tunable transverse magnetoresistance of the planar Hall effect(PHE),up to 48%in the Ni80Fe20/HfO2 heterostructures.This control is achieved by applying a gate voltage with an ionic liquid technique at ultra-low voltage,which exhibits a gate-dependent PHE.Moreover,in the range of 0-V to 1-V gate voltage,transverse magnetoresistance of PHE can be continuously regulated.Ferromagnetic resonance(FMR)also demonstrates the shift of the resonance field at low gate voltage.This provides a new method for the design of the electric field continuous control spintronics device with ultra-low energy consumption.

E224G Regulation of the PIP2-Induced Gating Kinetics of Kir2.1 Channels

As a member of the inwardly rectifying channel (Kir) family, Kir2.1 allows to influx the cell more easily than to efflux, a biophysical phenomenon named inward rectification. The function of Kir2.1 is to set the resting membrane potential and modulate membrane excitability. It has been reported that residue E224 plays a key role in regulating inward rectification. The mutant Kir2.1 (E224G) displays weaker inward rectification than the WT channel. Gating of Kir2.1 depends on the membrane lipid, PIP2, such that the channel gates are closed in the absence of PIP2. Here we perform electrophysiological and computational approaches, and demonstrate that E224 also plays an important role in the PIP2-dependent activation of Kir2.1 in addition to its influence on inward rectification. The E224G mutant takes 4.5 times longer to be activated by PIP2. To probe the mechanism by which E224G slows the channel opening kinetics, we perform targeted molecular dynamics simulations and find that the mutant weakens the interactions between CD-loop and C-linker (H221-R189) and the adjacent G-loops (R312-E303) which are thought to stabilize the open state of the channel in our previous work. These data provide new insights into the regulation of Kir2.1 channel activity and suggest that a common mechanism may be involved in the distinct biophysical processes, such as inward rectification and PIP2-induced gating.

Aberrant Light-Induced Depression is Associated with Impaired Sensorimotor Gating in Mice

Mice subjected to an irregular light-dark cycle are known to lose their capacity to synchronize their behavioral rhythm to environmental light, and to show endophenotypes related to depressive disorders. Here we observed that a susceptible strain of mice (C3H/HeJ) subjected to an irregular 3.5 hr:3.5 hr light-dark cycle showed an enhanced acoustic startle reflex and deficits in prepulse inhibition. As impaired sensorimotor gating is associated with the onset of a variety of mental disorders such as schizophrenia and major depressive disorder, irregular environmental light without circadian photo-entrainment may cause stress that has the potential to be involved in humans’ susceptibility to neuropsychiatric abnormalities.

Studies on sensitivity to tension and gating pathway of MscL by molecular dynamic simulation

Mechanosensitive（MS） ion channels play an important role in various physiological processes.Although the determination of the structure of mechanosensitive channel of large conductance（MscL） makes the simulation study possible,it has not so far been possible to directly simulate the gating mechanism of MscL in atomic detail.In this article,MscL has been studied via molecular dynamic（MD） simulations to gain a detailed description of the sensitivity to lateral tension and the gating pathway.MscL undergoes conformational rearrangement in sustaining lateral tension,and the open state is obtained when 2.0 MPa lateral tension is directly applied on the pure protein.During the opening process,Loop region responds to tension first,and the mechanical sensitivity is followed by S1 domain.Transmembrane（TM） bundle is the key position for channel opening,and the motion of TM1 helices finally realizes the significant expansion of the constricted gating pore.C-terminus domain presents expansion later during the TM opening.In our study,return of the whole protein to the initial closed state is achieved only in the early opening stage.During the relaxation from the open state,the TM helices are the most mobile domain,which is different from the opening process.

Clock Gating技术在超大规模集成电路设计时的应用

功耗是困扰超大规模集成电路发展的一个严重问题,而其中作为时钟树的电路占据在整个芯片的功耗的主要部分,改善时钟树功耗将大为改善整个芯片功耗。Clock Gating技术是改善时钟树功耗的有效直接方法,文章阐述了clock gating技术的基本原理以及多种适用于不同芯片电路结构的clock gating技术。