The phase separation and gel formation behavior in an alkoxy-derived silica sol-gel system containing C16EO15 has been investigated. Various gel morphologies similar to other sol-gel systems containing organic additiv...The phase separation and gel formation behavior in an alkoxy-derived silica sol-gel system containing C16EO15 has been investigated. Various gel morphologies similar to other sol-gel systems containing organic additives were obtained by changing the preparation conditions. Micrometer-range interconnected porous gels were obtained by freezing transitional structures of phase separation in the sol-gel process. The dependence of the resulting gel morphology on several important reaction parameters such as the starting composition, reaction temperature and acid catalyst concentration was studied in detail. The experimental results indicate that the gel morphology is mainly determined by the time relation between the onset of phase separation and gel formation.展开更多
The effects of annealing temperature on the sol–gel-derived ZnO thin films deposited on n-Sh100 i substrates by sol–gel spin coating method have been studied in this paper.The structural,optical,and electrical prope...The effects of annealing temperature on the sol–gel-derived ZnO thin films deposited on n-Sh100 i substrates by sol–gel spin coating method have been studied in this paper.The structural,optical,and electrical properties of ZnO thin films annealed at 450,550,and 650 °C in the Ar gas atmosphere have been investigated in a systematic way.The XRD analysis shows a polycrystalline nature of the films at all three annealing temperatures.Further,the crystallite size is observed to be increased with the annealing temperature,whereas the positions of various peaks in the XRD spectra are found to be red-shifted with the temperature.The surface morphology studied through the scanning electron microscopy measurements shows a uniform distribution of ZnO nanoparticles over the entire Si substrates of enhanced grain sizes with the annealing temperature.Optical properties investigated by photoluminescence spectroscopy shows an optical band gap varying in the range of 3.28–3.15 eV as annealing temperature is increased from 450 to 650 °C,respectively.The fourpoint probe measurement shows a decrease in resistivity from 2：1 10 2to 8：1 10 4X cm with the increased temperature from 450 to 650 °C.The study could be useful for studying the sol–gel-derived ZnO thin film-based devices for various electronic,optoelectronic,and gas sensing applications.展开更多
文摘The phase separation and gel formation behavior in an alkoxy-derived silica sol-gel system containing C16EO15 has been investigated. Various gel morphologies similar to other sol-gel systems containing organic additives were obtained by changing the preparation conditions. Micrometer-range interconnected porous gels were obtained by freezing transitional structures of phase separation in the sol-gel process. The dependence of the resulting gel morphology on several important reaction parameters such as the starting composition, reaction temperature and acid catalyst concentration was studied in detail. The experimental results indicate that the gel morphology is mainly determined by the time relation between the onset of phase separation and gel formation.
文摘The effects of annealing temperature on the sol–gel-derived ZnO thin films deposited on n-Sh100 i substrates by sol–gel spin coating method have been studied in this paper.The structural,optical,and electrical properties of ZnO thin films annealed at 450,550,and 650 °C in the Ar gas atmosphere have been investigated in a systematic way.The XRD analysis shows a polycrystalline nature of the films at all three annealing temperatures.Further,the crystallite size is observed to be increased with the annealing temperature,whereas the positions of various peaks in the XRD spectra are found to be red-shifted with the temperature.The surface morphology studied through the scanning electron microscopy measurements shows a uniform distribution of ZnO nanoparticles over the entire Si substrates of enhanced grain sizes with the annealing temperature.Optical properties investigated by photoluminescence spectroscopy shows an optical band gap varying in the range of 3.28–3.15 eV as annealing temperature is increased from 450 to 650 °C,respectively.The fourpoint probe measurement shows a decrease in resistivity from 2：1 10 2to 8：1 10 4X cm with the increased temperature from 450 to 650 °C.The study could be useful for studying the sol–gel-derived ZnO thin film-based devices for various electronic,optoelectronic,and gas sensing applications.
