Poly[bis(4-phenyl)-(2,4,6-trimethylphenyl)amine](PTAA)has been developed as one of the most popular hole transport layer(HTL)materials in inverted perovskite solar cells(PSCs).However,the efficiency,thermal stability,...Poly[bis(4-phenyl)-(2,4,6-trimethylphenyl)amine](PTAA)has been developed as one of the most popular hole transport layer(HTL)materials in inverted perovskite solar cells(PSCs).However,the efficiency,thermal stability,and reproducibility of PTAA-based devices are still largely limited by underoptimized chemical interaction,energy level alignment,and contact affinity at the PTAA/perovskite interface.To this end,we introduced a bilateral chemical linker to simultaneously achieve favorable chemical interaction with the PTAA underlayer and form robust coordination bonding with the buried perovskite bottom layer,which beneficially improved the contact affinity,facilitated the hole extraction,well-passivated the interfacial defects,and relieved the nonradiative charge recombination at the HTL/perovskite buried interface.The inverted PSCs modified with interfacial chemical linker exhibited consistently higher power conversion efficiencies and performance reproducibility than that of the PTAA-only devices.Combined with the blade-coated FA0.4MA0.6PbI3 perovskite layer,a champion efficiency of 22.23%has been achieved,which is one of the highest reported values for the inverted PSCs based on the bilayer HTL.The targeted device showed enhanced thermal stability under continuous heating at 85℃ owing to suppressed composition segregation with robust interfacial linkage and consolidation.This work offers a new insight towards making efficient,thermally stable,and reproducible perovskite photovoltaics.展开更多
In this paper,we present a model for grown-in point defects inside indium antimonide crystals grown by the Czochralski(CZ)technique.Our model is similar to the ones used for silicon crystal,which includes the Fickian ...In this paper,we present a model for grown-in point defects inside indium antimonide crystals grown by the Czochralski(CZ)technique.Our model is similar to the ones used for silicon crystal,which includes the Fickian diffusion and a recombina-tion mechanism.This type of models is used for the first time to analyze grown-in point defects in indium antimonide crystals.The temperature solution and the advance of the melt-crystal interface,which determines the time-dependent domain of the model,are based on a recently derived perturbation model.We propose a finite difference method which takes into account the moving interface.We study the effect of thermal flux on the point defect patterns during and at the end of the growth process.Our results show that the concentration of excessive point defects is positively correlated to the heat flux in the system.展开更多
Tungsten (W), with its primary advantages, is considered as the most promising candidate for plasma facing materials (PFMs) for the next generation of fusion devices such as ITER. However, continuous bombardment with ...Tungsten (W), with its primary advantages, is considered as the most promising candidate for plasma facing materials (PFMs) for the next generation of fusion devices such as ITER. However, continuous bombardment with 14.1 MeV neutron introduces Frenkel defects as the primary damage in W [1]. The Frenkel defects, composed of self-interstitial atoms (SIAs) and vacancies, can develop to extended defects such as voids and interstitial clusters, resulting in hardening, swelling and embrittlement of W, thus degrading the properties of W [2]. The recombination of SIAs and vacancies is an effective way to reduce the Frenkel defects in bulk W, which enhances the radiation resistance of W based on recent theoretical calculations [3,4]. The moving of the SIA to the vacancy could finish the recombination process through instantaneous or thermally activated way [3]. The instantaneous recombination region is an ellipse with the semi-minor axis of 5.4 ? and semi-major axis of 18 ? according to the molecular dynamics calculation [4].展开更多
基金the financial support from the National Natural Science Foundation of China(grant no.22005355)the Guangdong Basic and Applied Basic Research Foundation(grant no.2022A1515010282)the Fundamental Research Funds for the Central Universities,Sun Yat-sen University(grant no.22qntd2305).
文摘Poly[bis(4-phenyl)-(2,4,6-trimethylphenyl)amine](PTAA)has been developed as one of the most popular hole transport layer(HTL)materials in inverted perovskite solar cells(PSCs).However,the efficiency,thermal stability,and reproducibility of PTAA-based devices are still largely limited by underoptimized chemical interaction,energy level alignment,and contact affinity at the PTAA/perovskite interface.To this end,we introduced a bilateral chemical linker to simultaneously achieve favorable chemical interaction with the PTAA underlayer and form robust coordination bonding with the buried perovskite bottom layer,which beneficially improved the contact affinity,facilitated the hole extraction,well-passivated the interfacial defects,and relieved the nonradiative charge recombination at the HTL/perovskite buried interface.The inverted PSCs modified with interfacial chemical linker exhibited consistently higher power conversion efficiencies and performance reproducibility than that of the PTAA-only devices.Combined with the blade-coated FA0.4MA0.6PbI3 perovskite layer,a champion efficiency of 22.23%has been achieved,which is one of the highest reported values for the inverted PSCs based on the bilayer HTL.The targeted device showed enhanced thermal stability under continuous heating at 85℃ owing to suppressed composition segregation with robust interfacial linkage and consolidation.This work offers a new insight towards making efficient,thermally stable,and reproducible perovskite photovoltaics.
文摘In this paper,we present a model for grown-in point defects inside indium antimonide crystals grown by the Czochralski(CZ)technique.Our model is similar to the ones used for silicon crystal,which includes the Fickian diffusion and a recombina-tion mechanism.This type of models is used for the first time to analyze grown-in point defects in indium antimonide crystals.The temperature solution and the advance of the melt-crystal interface,which determines the time-dependent domain of the model,are based on a recently derived perturbation model.We propose a finite difference method which takes into account the moving interface.We study the effect of thermal flux on the point defect patterns during and at the end of the growth process.Our results show that the concentration of excessive point defects is positively correlated to the heat flux in the system.
基金supported by the National Magnetic Confinement Fusion Program (Grant No. 2013GB109002)the National Natural Science Foundation of China (Grant Nos. 11405006, and 51371019)
文摘Tungsten (W), with its primary advantages, is considered as the most promising candidate for plasma facing materials (PFMs) for the next generation of fusion devices such as ITER. However, continuous bombardment with 14.1 MeV neutron introduces Frenkel defects as the primary damage in W [1]. The Frenkel defects, composed of self-interstitial atoms (SIAs) and vacancies, can develop to extended defects such as voids and interstitial clusters, resulting in hardening, swelling and embrittlement of W, thus degrading the properties of W [2]. The recombination of SIAs and vacancies is an effective way to reduce the Frenkel defects in bulk W, which enhances the radiation resistance of W based on recent theoretical calculations [3,4]. The moving of the SIA to the vacancy could finish the recombination process through instantaneous or thermally activated way [3]. The instantaneous recombination region is an ellipse with the semi-minor axis of 5.4 ? and semi-major axis of 18 ? according to the molecular dynamics calculation [4].
