The subsurface damage(SSD)layers of monocrystalline germanium wafers lapped by three different ways were measured and compared by the method of nanoindentation and micro morphology.Three ways such as ice-fixed abrasiv...The subsurface damage(SSD)layers of monocrystalline germanium wafers lapped by three different ways were measured and compared by the method of nanoindentation and micro morphology.Three ways such as ice-fixed abrasive,thermosetting fixed abrasive and free abrasive lappings are adopted to lap monocrystalline germanium wafers.The SSD depth was measured by a nanoindenter,and the morphology of SSD layer was observed by an atomic force microscopy(AFM).The results show that the SSD layer of monocrystalline germanium wafer is mainly composed of soft corrosion layer and plastic scratch and crack growth layer.Compared with thermosetting fixed abrasive and free abrasive lappings,the SSD depth lapped with ice-fixed abrasive is shallower.Moreover,the SSD morphology of monocrystalline germanium wafer lapped with ice-fixed abrasive is superior to those of two other processing ways.展开更多
SiGe offers a low-cost alternative to conventional infrared sensor material systems such as InGaAs, InSb, and HgCdTe for developing near-infrared (NIR) photodetector devices that do not require cooling and can operate...SiGe offers a low-cost alternative to conventional infrared sensor material systems such as InGaAs, InSb, and HgCdTe for developing near-infrared (NIR) photodetector devices that do not require cooling and can operate with relatively low dark current. As a result of the significant difference in thermal expansion coefficients between germanium (Ge) and silicon (Si), tensile strain incorporated into SiGe detector devices through specialized growth processes can extend their NIR wavelength range of operation. We have utilized high throughput, large-area complementary metal-oxide semiconductor (CMOS) technology to fabricate Ge based p-i-n (PIN) detector devices on 300 mm Si wafers. The two-step device fabrication process, designed to effectively reduce the density of defects and dislocations arising during deposition that form recombination centers which can result in higher dark current, involves low temperature epitaxial deposition of Ge to form a thin p<sup>+</sup> seed layer, followed by higher temperature deposition of a thicker Ge intrinsic layer. Phosphorus was then ion-implanted to create devices with n<sup>+</sup> regions of various doping concentrations. Secondary ion mass spectroscopy (SIMS) has been utilized to determine the doping profiles and material compositions of the layers. In addition, electrical characterization of the I-V photoresponse of different devices from the same wafer with various n<sup>+</sup> region doping concentrations has demonstrated low dark current levels (down to below 1 nA at -1 V bias) and comparatively high photocurrent at reverse biases, with optimal response for doping concentration of 5 × 10<sup>19</sup> cm<sup>-3</sup>.展开更多
基金supported by the National Natural Science Foundation of China(No.51375237)the Postdoctoral Science Foundation of China(No.2015T80547)
文摘The subsurface damage(SSD)layers of monocrystalline germanium wafers lapped by three different ways were measured and compared by the method of nanoindentation and micro morphology.Three ways such as ice-fixed abrasive,thermosetting fixed abrasive and free abrasive lappings are adopted to lap monocrystalline germanium wafers.The SSD depth was measured by a nanoindenter,and the morphology of SSD layer was observed by an atomic force microscopy(AFM).The results show that the SSD layer of monocrystalline germanium wafer is mainly composed of soft corrosion layer and plastic scratch and crack growth layer.Compared with thermosetting fixed abrasive and free abrasive lappings,the SSD depth lapped with ice-fixed abrasive is shallower.Moreover,the SSD morphology of monocrystalline germanium wafer lapped with ice-fixed abrasive is superior to those of two other processing ways.
文摘SiGe offers a low-cost alternative to conventional infrared sensor material systems such as InGaAs, InSb, and HgCdTe for developing near-infrared (NIR) photodetector devices that do not require cooling and can operate with relatively low dark current. As a result of the significant difference in thermal expansion coefficients between germanium (Ge) and silicon (Si), tensile strain incorporated into SiGe detector devices through specialized growth processes can extend their NIR wavelength range of operation. We have utilized high throughput, large-area complementary metal-oxide semiconductor (CMOS) technology to fabricate Ge based p-i-n (PIN) detector devices on 300 mm Si wafers. The two-step device fabrication process, designed to effectively reduce the density of defects and dislocations arising during deposition that form recombination centers which can result in higher dark current, involves low temperature epitaxial deposition of Ge to form a thin p<sup>+</sup> seed layer, followed by higher temperature deposition of a thicker Ge intrinsic layer. Phosphorus was then ion-implanted to create devices with n<sup>+</sup> regions of various doping concentrations. Secondary ion mass spectroscopy (SIMS) has been utilized to determine the doping profiles and material compositions of the layers. In addition, electrical characterization of the I-V photoresponse of different devices from the same wafer with various n<sup>+</sup> region doping concentrations has demonstrated low dark current levels (down to below 1 nA at -1 V bias) and comparatively high photocurrent at reverse biases, with optimal response for doping concentration of 5 × 10<sup>19</sup> cm<sup>-3</sup>.
