ZrCoCe getter films with thickness of ~2.3 lm were deposited on Si(100) wafers by direct current(DC)magnetron sputtering process. A 400-nm-thick Pd protection layer was then deposited on the as-deposited ZrCoCe film w...ZrCoCe getter films with thickness of ~2.3 lm were deposited on Si(100) wafers by direct current(DC)magnetron sputtering process. A 400-nm-thick Pd protection layer was then deposited on the as-deposited ZrCoCe film without exposure to atmosphere. Microstructure, surface morphology and surface chemical state of the films were analyzed. Moreover, hydrogen sorption properties were determined. The results show that the ZrCoCe film displays a cauliflower-like morphology and a porous columnar-like structure which is composed of nanocrystal grains. The Pd protection layer tightly adheres to the surface of the ZrCoCe film and efficiently prevents the oxidation of Zr under exposure to atmosphere. We find that the hydrogen sorption properties of the Pd-ZrCoCe film are significantly improved,in comparison with those of the as-deposited ZrCoCe film.展开更多
Hazy backside gettering of boron-doped <111> siljcon wafer with a-Si: H film deposited by rf glow discharge technique (rf-GD) has been investigated by SEM, optical microscope and preferential etching tech- lique...Hazy backside gettering of boron-doped <111> siljcon wafer with a-Si: H film deposited by rf glow discharge technique (rf-GD) has been investigated by SEM, optical microscope and preferential etching tech- lique. lt is evident that the deposited film can effectively getter the haze after annealing at l l00℃in wet oxy- len ambient for 120 min. The pre-crystallization annealing at 650℃ in argon ambient for 10 min enhances the gettering effectiveness. The low temperature(200～300℃) process of growing extrinsic gettering film reduces the processing contamination.展开更多
TiZrV film is mainly applied in the ultra-high vacuum pipes of storage rings. Thin fihn coatings of palladium, which are added onto the TiZrV film to increase the service life of nonevaporable getters and enhance H2 p...TiZrV film is mainly applied in the ultra-high vacuum pipes of storage rings. Thin fihn coatings of palladium, which are added onto the TiZrV film to increase the service life of nonevaporable getters and enhance H2 pumping speed, were deposited on the inner face of stainless steel pipes by dc magnetron sputtering using argon gas as the sputtering gas. The TiZrV-Pd film properties were investigated by atomic force microscope （AFM）, scanning electron microscope （SEM）, X-ray photoelectron spectroscopy （XPS） and X-Ray Diffraction （XRD）. The grain size of TiZrV and Pd films were about 0.42 1.3 nm and 8.5-18.25 nm respectively. It was found that the roughness of TiZrV films is small, about 2 4 nm, but for Pd film it is large, about 17 19 nm. The PP At. % of Pd in TiZrV/Pd films varied from 86.84 to 87.56 according to the XPS test results.展开更多
基金financially supported by the National Natural Science Foundation of China(No.61874137)。
文摘ZrCoCe getter films with thickness of ~2.3 lm were deposited on Si(100) wafers by direct current(DC)magnetron sputtering process. A 400-nm-thick Pd protection layer was then deposited on the as-deposited ZrCoCe film without exposure to atmosphere. Microstructure, surface morphology and surface chemical state of the films were analyzed. Moreover, hydrogen sorption properties were determined. The results show that the ZrCoCe film displays a cauliflower-like morphology and a porous columnar-like structure which is composed of nanocrystal grains. The Pd protection layer tightly adheres to the surface of the ZrCoCe film and efficiently prevents the oxidation of Zr under exposure to atmosphere. We find that the hydrogen sorption properties of the Pd-ZrCoCe film are significantly improved,in comparison with those of the as-deposited ZrCoCe film.
文摘Hazy backside gettering of boron-doped <111> siljcon wafer with a-Si: H film deposited by rf glow discharge technique (rf-GD) has been investigated by SEM, optical microscope and preferential etching tech- lique. lt is evident that the deposited film can effectively getter the haze after annealing at l l00℃in wet oxy- len ambient for 120 min. The pre-crystallization annealing at 650℃ in argon ambient for 10 min enhances the gettering effectiveness. The low temperature(200～300℃) process of growing extrinsic gettering film reduces the processing contamination.
基金Supported by National Natural Science Funds of China(11205155)Fundamental Research Funds for the Central Universities(WK2310000041)
文摘TiZrV film is mainly applied in the ultra-high vacuum pipes of storage rings. Thin fihn coatings of palladium, which are added onto the TiZrV film to increase the service life of nonevaporable getters and enhance H2 pumping speed, were deposited on the inner face of stainless steel pipes by dc magnetron sputtering using argon gas as the sputtering gas. The TiZrV-Pd film properties were investigated by atomic force microscope （AFM）, scanning electron microscope （SEM）, X-ray photoelectron spectroscopy （XPS） and X-Ray Diffraction （XRD）. The grain size of TiZrV and Pd films were about 0.42 1.3 nm and 8.5-18.25 nm respectively. It was found that the roughness of TiZrV films is small, about 2 4 nm, but for Pd film it is large, about 17 19 nm. The PP At. % of Pd in TiZrV/Pd films varied from 86.84 to 87.56 according to the XPS test results.
