Model of output characteristics of giant magnetoresistance(GMR) multilayer sensor

In this paper,the giant magnetoresistance(GMR)multilayer sensor is fabricated with a Wheatstone bridge,and it exhibits excellent performance with a sensitivity of 2.8349 mV/(V/Oe)(1 Oe=79.5775 A·m^-1)and a saturation field of 26 Oe along the sensitive axis.The GMR sensor is also characterized in a high magnetic field.The sensitivity decreases from 2.8349 mV/(V/Oe)at an angle of 0°to 0.0175 mV/(V/Oe)at an angle of 90°.Then,the sensor is placed in a series of rotating magnetic fields.We propose a model to express the output characteristics of the GMR multilayer sensor.The transfer curves of the sensor can be shown as two exactly symmetrical circles with an increasing radius when the magnetic field increases.The experimental results are consistent with the simulation results of the model.The advantage of this model is that it is simpler and more intuitive.

Effect of thermal deformation on giant magnetoresistance of flexible spin valves grown on polyvinylidene fluoride membranes

We fabricated flexible spin valves on polyvinylidene fluoride（PVDF） membranes and investigated the influence of thermal deformation of substrates on the giant magnetoresistance（GMR） behaviors. The large magnetostrictive Fe_（81）Ga_（19）（Fe Ga） alloy and the low magnetostrictive Fe_（19）Ni_（81）（Fe Ni） alloy were selected as the free and pinned ferromagnetic layers.In addition, the exchange bias（EB） of the pinned layer was set along the different thermal deformation axes α_（31） or α_（32） of PVDF. The GMR ratio of the reference spin valves grown on Si intrinsically increases with lowering temperature due to an enhancement of spontaneous magnetization. For flexible spin valves, when decreasing temperature, the anisotropic thermal deformation of PVDF produces a uniaxial anisotropy along the α_（32） direction, which changes the distribution of magnetic domains. As a result, the GMR ratio at low temperature for spin valves with EB α_（32）becomes close to that on Si, but for spin valves with EB α_（31）is far away from that on Si. This thermal effect on GMR behaviors is more significant when using magnetostrictive Fe Ga as the free layer.

High Sensitivity Biomolecular Recognition Device Based on Giant Magnetoresistance Effect

The structure and microfabrication,the detecting theory and the way of biomolecular recognition device based on giant magnetoresistance(GMR) effect are introduced,also the signal detecting and processing instrumentation are presented. Here the GMR biosensor was fabricated with magnetic tunnel junction(MJT) material.The biomolecular recognition device contains an array of MJT sensors,single MJT sensor size is 10μm×20μm,tunneling magnetoresistance ratio(TMR) at room temperature is 52.2%,the typical values of junction resistance-area product Rs is 2.6 kΩμm^2,detecting sensitivity of this system is about 8×10^(-4) A·m^(-1).Bioadaptation layer of this device was fabricated with PDMS the thickness of which is less than 100 nm.

Simultaneous observation of positive and negative giant magnetoresistances in composite （La0.83Sr0.17MnO3） 1-x （ITO）x

We have studied the transport property of the composites （La0.83Sr0.17 MnO3）1-x（ITO）x [ITO=（In2O3）0.95 （SNO2）0.05], which were fabricated by mechanically mixing La0.83Sr0.17MnO3 and ITO grains. A giant positive magnetoresistance （PMR） has been observed above the Curie temperature Tc for samples with x around 0.40, in addition to the negative magnetoresistanee related to spin-dependent interracial tunnelling below To. For （La0.83Sr0.17MnO3）0.6（ITO）0.4, the magnetoresistive ratio for the PMR can reach 39.3% under a magnetic field H=2.24×10^5A/m. Theoretical analysis suggests that the magnetic-field-induced broadening of the p-n barrier between both kinds of grains and the density of the p-n heterostructures should be responsible for the PMR behaviour.

Spin-valley-dependent transport and giant tunneling magnetoresistance in silicene with periodic electromagnetic modulations

The transport property of electrons tunneling through arrays of magnetic and electric barriers is studied in silicene. In the tunneling transmission spectrum, the spin-valley-dependent filtered states can be achieved in an incident energy range which can be controlled by the electric gate voltage. For the parallel magnetization configuration, the transmission is asymmetric with respect to the incident angle θ, and electrons with a very large negative incident angle can always transmit in propagating modes for one of the spin-valley filtered states under a certain electromagnetic condition. But for the antiparallel configuration, the transmission is symmetric about θ and there is no such transmission channel. The difference of the transmission between the two configurations leads to a giant tunneling magnetoresistance （TMR） effect. The TMR can reach to 100% in a certain Fermi energy interval around the electrostatic potential. This energy interval can be adjusted significantly by the magnetic field and/or electric gate voltage. The results obtained may be useful for future valleytronic and spintronic applications, as well as magnetoresistance device based on silicene.

Influence of Pr Content on the Sructure and Giant Magnetoresistance of Pr_x(Co_(40)Ag_(60))_(100-x) Granular Films

Prx（Co40Ag60）100-x （x=0, 0.5, 1, 1.5, 2, 3） granular films have been prepared by DC magneto controlled sputtering method. The XRD data indicated that Pr element favors the （111） plane preferential orientation. Magnetic measurements indicate that the average size of magnetic particles decreases as Pr content increases. For relatively low addition of Pr to CoAg granular films, Pr element can enhance GMR value and a peak value of about -14.3% is obtained at x=1.

Ultralow detection limit of giant magnetoresistance biosensor using Fe3O4–graphene composite nanoparticle label

A special Fe3O4nanoparticles–graphene（Fe3O4–GN） composite as a magnetic label was employed for biodetection using giant magnetoresistance（GMR） sensors with a Wheatstone bridge. The Fe3O4–GN composite exhibits a strong ferromagnetic behavior with the saturation magnetization MS of approximately 48 emu/g, coercivity HC of 200 Oe, and remanence Mr of 8.3 emu/g, leading to a large magnetic fringing field. However, the Fe3O4 nanoparticles do not aggregate together, which can be attributed to the pinning and separating effects of graphene sheet to the magnetic particles. The Fe3O4–GN composite is especially suitable for biodetection as a promising magnetic label since it combines two advantages of large fringing field and no aggregation. As a result, the concentration x dependence of voltage difference ｜？V｜ between detecting and reference sensors undergoes the relationship of ｜？V｜ = 240.5 lgx ＋ 515.2 with an ultralow detection limit of 10 ng/mL（very close to the calculated limit of 7 ng/mL） and a wide detection range of 4 orders.

Giant Magnetoresistance Effect of [bcc-Fe(M)/Cu](M=Co,Ni) Multilayers

GMR effect of multilayers of bcc-Fe(M)(M=Co, Ni) alloy and Cu layers has been investigated. The maximum MR ratio is found at 1.1 nm Fe(Co) and 1.3～1.4 nm Cu layer thickness in [Fe(Co)/CuJ, and at 1.6 nm Fe(Ni) and 1.4 nm Cu layer thickness in [Fe(Ni)/Cu]. Under the optimum annealing condition, the MR ratio increases up to 50% and 38% for Fe(Co) and Fe(Ni) systems, respectively. The origin of the increase of GMR is discussed, taking the progress of preferred orientation of Fe(Co)[100] or Fe(Ni)[100] by anneahng into account.

基于GMR生物传感器的病原体检测研究进展

对当前病原体检测方法和磁性生物传感器的优势进行了简单阐述,分别介绍了巨磁阻(GMR)传感器在生物医学检测领域的应用优势、GMR效应的来源及常见的GMR传感器的结构类型,重点关注了GMR生物传感的基本原理,包括传感器在免疫分析领域的应用策略和传感器表面功能化的方法。总结了GMR生物传感器在病原体检测中的发展现状,重点阐述了GMR生物传感器在靶向标签、致病菌和病毒检测方面的实际应用。最后对当前GMR生物传感器在病原体检测领域面临的问题进行简要分析,对GMR生物传感器未来的应用前景进行了展望,为新一代可用于临床检测的GMR生物检测系统的开发奠定坚实的基础。

Quantum Theory for Interfacial Roughness and Angle Dependence of Giant Magnetoresistance in Magnetic Multilayers

The giant magnetoresistance (GMR) in magnetic multilayers with current in the plane of the layers is studied by using the quantum-statistical Green's function approach, in which the effects of the interfacial roughness and magnetization configuration on the GMR are included. It is shown that the maximal GMR first increases and then decreases with increasing interfacial roughness, exhibiting a peak at an optimum value of interfacial roughness. An approximatelylinear dependence of GMR on sin2 (θ/2) is obtained, where θ is the angle between magnetizations of the two successive ferromagnetic layers. Furthermore, the maximal GMR is found to increase with increasing the number ofbilayers.

Quantum Analytical Theory for Giant Magnetoresistance in Magnetic Multilayered Cylindrical Systems

Taking into account the quantum size effects and considering three types of scattering from bulk impurities,rough surface and rough interfaces, we use quantum-statistical Green's function approach and Kubo theory to calculate the electronic conductivity and the giant magnetoresistance in magnetic multilayered cylindrical systems. It is found that in the limit of weakly scattering from impurities surface and interfaces, the total conductivity is given by a sum of conductivities of all the subbands and two spin-channels. For each subband and each spin-channel the scattering rate due to the impurities, surface and interfaces is added up.

Phenomenological Theory for Giant Magnetoresistance Oscillation in Magnetic Multiplayer

A phenomenological theoretical model for magnetic multilayer based on Boltzmann equation and Fuchs-Sondheimer theory is studied. An oscillatory transmission coefficient (Ts) is introduced into the boundary conditions to simulate the alternate ferromagnetic and anti-ferromagnetic coupling between the magnetic layers. The transmission coefficient has an oscillatory factor relating to the thickness of space layer. Other effects such as interface roughness on Ts are also taken into account. The numerical results for [Fe/Cr]n multilayer agree with the experimental data very well, both in the period and range of osciallation, which is leaded by the dependence of giant magnetoresistance(GMR) on layer thickness of space layer.

X-ray and Magnetoresistance Measurements of Electrodeposited Cu-Co Granular Films

Granular CoxCu1-x alloy films were prepared by electrodeposition at room temperature directly onto semiconducting Si substrate. X-ray diffraction (XRD) revealed that the as-deposited films formed single phase metastable fcc alloy structure. The fcc lattice parameter α was found to decrease linearly with increasing Co concentration x in the studied range. The giant magnetoresistance (GMR) of the films was improved after annealing. Pure Co fcc diffraction peaks were observed in the diffractogram of the annealed sample, indicating phase separation occurred upon annealing. The optimal annealing temperature was 450℃. The maximum of magnetoresistance (MR) ratio 8.21% was obtained for the Co20Cu80 thin film after annealing at 450℃ for 1 h. The saturation field decreased upon annealing in the MR curves of Co20Cu80 film.

Magnetoresistive behavior and magnetization reversal of NiFe/Cu/CoFe/IrMn spin valve GMRs in nanoscale

The magnetoresistance behavior and the magnetization reversal mode of NiFe/Cu/CoFe/IrMn spin valve giant magnetoresistance （SV-GMR） in nanoscale were investigated experimentally and theoretically by nanosized magnetic simulation methods. Based on the Landau-Lifshitz-Gilbert equation, a model with a special gridding was proposed to calculate the giant magnetoresistance ratio （MR） and investigate the magnetization reversal mode. The relationship between MR and the external magnetic field was obtained and analyzed. Studies into the variation of the magnetization distribution reveal that the magnetization reversal mode, that is, the jump variation mode for NiFe/Cu/CoFe/IrMn, depends greatly on the antiferromagnetic coupling behavior between the pinned layer and the antiferromagnetic layer. It is also found that the switching field is almost linear with the exchange coefficient.

Theoretical and experimental investigation on giant magnetoresistive materials with amorphous ferromagnetic layer

Pseudo-spin-valve (PSV) sandwiches using amorphous CoNbZr alloy as soft magnetic layer were fabricated by magnetron sputtering. The giant magnetoresistance (GMR) and its dependence on the thickness of magnetic layer were investigated. Anti-parallel magnetization alignments were observed in the samples with very thin CoNbZr thickness (2-4 nm) and a maximum GMR ratio of 6.5% was obtained. The Camley-Barnas semiclassical model was extended for amorphous layer based magnetic sandwiches by considering that the mixed layers exist between the ferromagnetic and nonmagnetic layer. The calculated results agree with the experimental results very well, indicating that the new model gives a more realistic picture of the physical processes that take place in the magnetic sandwiches. Moreover, the calculated results for amorphous sandwiches also clarify that the occurrence of maximum GMR at very small thickness of amorphous layer is ascribed to the short mean-free-path in amorphous materials.

子午工程二期宽频地磁波监测仪研制

地球的磁层中存在各种波现象,其频率从mHz延伸到数千Hz.这些波的研究一直是空间物理学研究的核心问题.针对目前世界上地磁台站的波监测设备均为各自测量相对变化、缺乏统一标定、无法进行从高纬到低纬联合观测、无法进行多台设备观测数据的统一对比研究的现状,本文综合使用磁阻传感器(探测ULF频段:1 mHz~2 Hz)、巨磁感抗传感器(探测ELF频段:0.2 Hz~2 kHz)和线圈传感器(探测VLF频段:0.2 kHz~10 kHz)研制新一代的宽频地磁波监测仪,将这些监测仪放置在120°E子午链附近的黑龙江漠河站(高纬)、北京十三陵站(中纬)、海南乐东站(低纬)等典型区域的地磁台站上,并对各个台站的设备进行统一的时间、振幅和频率标定,结合FY-3E、SMILE等近地空间卫星数据,全面提升对地球磁层的各种波现象的探测能力.研制的宽频地磁波监测仪的性能测试实验表明,其具有对一定频率(1 mHz~10 kHz)的波的探测能力;其幅度探测范围为:±65000 nT(ULF频段)、±1000 nT(ELF频段)、±100 pT(VLF频段);在量程范围内又具有较低的非线性误差:ULF频段≤0.0446%、ELF频段≤0.51%、VLF频段≤1.18%;噪声水平也较低:RMS(方均根)噪声≤0.5554 nT(ULF频段)、NPS(功率谱)噪声≤0.028 nT/√Hz(ELF频段)、NPS(功率谱)噪声≤0.24 pT/√Hz(VLF频段).所有这些特点使得所提出的宽频地磁波监测仪能够满足子午工程二期的波探测需求.

超晶格多层膜的电化学制备、表征及其GMR特性的研究

以半导体Si为衬底,电化学沉积Cu/Co超晶格多层膜,用SEM表征多层膜的断面形貌.XRD研究表明,多层膜的调制波长为20～160nm时,膜层间发生外延生长.随着调制波长的减小,外延生长对膜层结构的影响越来越明显.当调制波长小于20nm时,在XRD强衍射峰的两侧出现卫星峰,表明多层膜形成超晶格结构.根据卫星峰位置计算的调制波长与由法拉第定律估算的结果非常接近.多层膜的巨磁电阻(GMR)性能随多层膜周期数的增加而增大;当周期数大于300时,GMR性能基本上不再随周期数变化,说明基体的导电性质对GMR的影响可以忽略.

高压合成双钙钛矿Y_(2)NiIrO_(6)中场冷诱导的巨磁电阻效应

双钙钛矿材料Y_(2)NiIrO_(6)的亚铁磁转变温度为192 K,因其奇异的交换偏置效应而受到广泛关注。系统研究了Y_(2)NiIrO_(6)的低温晶体结构、电导行为及磁电阻性能,发现该材料在130 K时保持了290 K时的晶体结构,并在130~300 K的温区内表现出半导体电导行为。在居里温度以上的顺磁状态,其导电行为可以用Efros-Shklovskii变程跃迁模型拟合,在居里温度以下,亚铁磁有序使电阻行为偏离该模型。更为有趣的是,亚铁磁序诱导了材料的负磁电阻效应,并且7.0 T的场冷诱导了–10%的巨磁电阻效应。这一新机制为探索新型巨磁电阻材料提供了全新的研究思路。

利用GMR效应的电子指南针

介绍了一种基于巨磁电阻材料(G ian t m agnetores istance,GM R)为传感器的电子指南针。由于GM R磁场灵敏度高、易集成、能耗低以及成本低,其潜力明显优于磁通门、磁感应和霍尔效应等其他传感器。本文以GM R为传感器,构筑了水平状态下的电子指南针,精度达到±1;°并在系统中采用加速度计,分析了非水平状态下所产生的误差。

基于GMR传感器的小体积二维电子罗盘设计

针对二维电子罗盘存在的体积、精度较难平衡等问题,对二维电子罗盘展开了研究。通过对硬件与算法的优化设计,提出了一种较为实用的解决方案。硬件上采用新型的二维GMR传感器感测磁场,使用C8051F350单片机自带的Δ-ΣA/D模块进行了信号调理,有效减少了信号调理器件,使用了针对GMR传感器优化的算法,在无干扰下可保证其具有较好的辨向精度,在有外部干扰的环境中,通过旋转校准,依然可以保证较高的精度。同时,将校准数据IAP到单片机Flash中,即使系统掉电也可以保证数据不丢失。经国防科技工业弱磁一级计量站的测试,其测试结果表明,该设备在无干扰情况下精度可达±2°,在强干扰下精度依然较高,具有较强的工程实用价值。