Effect of thermal deformation on giant magnetoresistance of flexible spin valves grown on polyvinylidene fluoride membranes

We fabricated flexible spin valves on polyvinylidene fluoride（PVDF） membranes and investigated the influence of thermal deformation of substrates on the giant magnetoresistance（GMR） behaviors. The large magnetostrictive Fe_（81）Ga_（19）（Fe Ga） alloy and the low magnetostrictive Fe_（19）Ni_（81）（Fe Ni） alloy were selected as the free and pinned ferromagnetic layers.In addition, the exchange bias（EB） of the pinned layer was set along the different thermal deformation axes α_（31） or α_（32） of PVDF. The GMR ratio of the reference spin valves grown on Si intrinsically increases with lowering temperature due to an enhancement of spontaneous magnetization. For flexible spin valves, when decreasing temperature, the anisotropic thermal deformation of PVDF produces a uniaxial anisotropy along the α_（32） direction, which changes the distribution of magnetic domains. As a result, the GMR ratio at low temperature for spin valves with EB α_（32）becomes close to that on Si, but for spin valves with EB α_（31）is far away from that on Si. This thermal effect on GMR behaviors is more significant when using magnetostrictive Fe Ga as the free layer.

Giant Magnetoresistance Effect of [bcc-Fe(M)/Cu](M=Co,Ni) Multilayers

GMR effect of multilayers of bcc-Fe(M)(M=Co, Ni) alloy and Cu layers has been investigated. The maximum MR ratio is found at 1.1 nm Fe(Co) and 1.3～1.4 nm Cu layer thickness in [Fe(Co)/CuJ, and at 1.6 nm Fe(Ni) and 1.4 nm Cu layer thickness in [Fe(Ni)/Cu]. Under the optimum annealing condition, the MR ratio increases up to 50% and 38% for Fe(Co) and Fe(Ni) systems, respectively. The origin of the increase of GMR is discussed, taking the progress of preferred orientation of Fe(Co)[100] or Fe(Ni)[100] by anneahng into account.

Simultaneous observation of positive and negative giant magnetoresistances in composite （La0.83Sr0.17MnO3） 1-x （ITO）x

We have studied the transport property of the composites （La0.83Sr0.17 MnO3）1-x（ITO）x [ITO=（In2O3）0.95 （SNO2）0.05], which were fabricated by mechanically mixing La0.83Sr0.17MnO3 and ITO grains. A giant positive magnetoresistance （PMR） has been observed above the Curie temperature Tc for samples with x around 0.40, in addition to the negative magnetoresistanee related to spin-dependent interracial tunnelling below To. For （La0.83Sr0.17MnO3）0.6（ITO）0.4, the magnetoresistive ratio for the PMR can reach 39.3% under a magnetic field H=2.24×10^5A/m. Theoretical analysis suggests that the magnetic-field-induced broadening of the p-n barrier between both kinds of grains and the density of the p-n heterostructures should be responsible for the PMR behaviour.

Ultralow detection limit of giant magnetoresistance biosensor using Fe3O4–graphene composite nanoparticle label

A special Fe3O4nanoparticles–graphene（Fe3O4–GN） composite as a magnetic label was employed for biodetection using giant magnetoresistance（GMR） sensors with a Wheatstone bridge. The Fe3O4–GN composite exhibits a strong ferromagnetic behavior with the saturation magnetization MS of approximately 48 emu/g, coercivity HC of 200 Oe, and remanence Mr of 8.3 emu/g, leading to a large magnetic fringing field. However, the Fe3O4 nanoparticles do not aggregate together, which can be attributed to the pinning and separating effects of graphene sheet to the magnetic particles. The Fe3O4–GN composite is especially suitable for biodetection as a promising magnetic label since it combines two advantages of large fringing field and no aggregation. As a result, the concentration x dependence of voltage difference ｜？V｜ between detecting and reference sensors undergoes the relationship of ｜？V｜ = 240.5 lgx ＋ 515.2 with an ultralow detection limit of 10 ng/mL（very close to the calculated limit of 7 ng/mL） and a wide detection range of 4 orders.

Influence of Pr Content on the Sructure and Giant Magnetoresistance of Pr_x(Co_(40)Ag_(60))_(100-x) Granular Films

Prx（Co40Ag60）100-x （x=0, 0.5, 1, 1.5, 2, 3） granular films have been prepared by DC magneto controlled sputtering method. The XRD data indicated that Pr element favors the （111） plane preferential orientation. Magnetic measurements indicate that the average size of magnetic particles decreases as Pr content increases. For relatively low addition of Pr to CoAg granular films, Pr element can enhance GMR value and a peak value of about -14.3% is obtained at x=1.

High Sensitivity Biomolecular Recognition Device Based on Giant Magnetoresistance Effect

The structure and microfabrication,the detecting theory and the way of biomolecular recognition device based on giant magnetoresistance(GMR) effect are introduced,also the signal detecting and processing instrumentation are presented. Here the GMR biosensor was fabricated with magnetic tunnel junction(MJT) material.The biomolecular recognition device contains an array of MJT sensors,single MJT sensor size is 10μm×20μm,tunneling magnetoresistance ratio(TMR) at room temperature is 52.2%,the typical values of junction resistance-area product Rs is 2.6 kΩμm^2,detecting sensitivity of this system is about 8×10^(-4) A·m^(-1).Bioadaptation layer of this device was fabricated with PDMS the thickness of which is less than 100 nm.

Phenomenological Theory for Giant Magnetoresistance Oscillation in Magnetic Multiplayer

A phenomenological theoretical model for magnetic multilayer based on Boltzmann equation and Fuchs-Sondheimer theory is studied. An oscillatory transmission coefficient (Ts) is introduced into the boundary conditions to simulate the alternate ferromagnetic and anti-ferromagnetic coupling between the magnetic layers. The transmission coefficient has an oscillatory factor relating to the thickness of space layer. Other effects such as interface roughness on Ts are also taken into account. The numerical results for [Fe/Cr]n multilayer agree with the experimental data very well, both in the period and range of osciallation, which is leaded by the dependence of giant magnetoresistance(GMR) on layer thickness of space layer.

Giant magnetoresistance in antiferromagnetic Mn2Au-based tunnel junction

Recent studies on the electrical switching of tetragonal antiferromagnet(AFM)via Neél spin-orbit torque have paved the way for the economic use of antiferromagnetic materials.The most difficult obstacle that presently limits the application of antiferromagnetic materials in spintronics,especially in memory storage applications,could be the small and fragile magnetoresistance(MR)in the AFM-based nanostructure.In this study,we investigated the spin transports in Mn2Au-based tunnel junctions based on the first-principle scattering theory.Giant MRs more than 1000%are predicted in some Fe/MgO/Ag/Mn2Au/Ta junctions that are about the same order as that in an MgO-based ferromagnetic tunnel junction with same barrier thickness.The interplay of the spin filtering effect,the quantum well resonant states,and the interfacial resonant states could be responsible for the unusual giant and robust MRs observed in these Mn2Au-based junctions.

Spin-valley-dependent transport and giant tunneling magnetoresistance in silicene with periodic electromagnetic modulations

The transport property of electrons tunneling through arrays of magnetic and electric barriers is studied in silicene. In the tunneling transmission spectrum, the spin-valley-dependent filtered states can be achieved in an incident energy range which can be controlled by the electric gate voltage. For the parallel magnetization configuration, the transmission is asymmetric with respect to the incident angle θ, and electrons with a very large negative incident angle can always transmit in propagating modes for one of the spin-valley filtered states under a certain electromagnetic condition. But for the antiparallel configuration, the transmission is symmetric about θ and there is no such transmission channel. The difference of the transmission between the two configurations leads to a giant tunneling magnetoresistance （TMR） effect. The TMR can reach to 100% in a certain Fermi energy interval around the electrostatic potential. This energy interval can be adjusted significantly by the magnetic field and/or electric gate voltage. The results obtained may be useful for future valleytronic and spintronic applications, as well as magnetoresistance device based on silicene.

X-ray and Magnetoresistance Measurements of Electrodeposited Cu-Co Granular Films

Granular CoxCu1-x alloy films were prepared by electrodeposition at room temperature directly onto semiconducting Si substrate. X-ray diffraction (XRD) revealed that the as-deposited films formed single phase metastable fcc alloy structure. The fcc lattice parameter α was found to decrease linearly with increasing Co concentration x in the studied range. The giant magnetoresistance (GMR) of the films was improved after annealing. Pure Co fcc diffraction peaks were observed in the diffractogram of the annealed sample, indicating phase separation occurred upon annealing. The optimal annealing temperature was 450℃. The maximum of magnetoresistance (MR) ratio 8.21% was obtained for the Co20Cu80 thin film after annealing at 450℃ for 1 h. The saturation field decreased upon annealing in the MR curves of Co20Cu80 film.

Mn-based antiperovskite functional materials: Review of research

Our recent research on the Mn-based antiperovskite functional materials AXMn3 （A： metal or semiconducting elements; X： C or N） is outlined. Antiperovskite carbides （e.g., AlCMn3） show large magnetocaloric effect comparable to those of typical magnetic refrigerant materials. Enhanced giant magnetoresistance up to 70% at 50 kOe （1 Oe=79.5775 A.m-1） over a wide temperature span was obtained in Ga1-xZnxCMn3 and GaCMn3 xNix. In Cu0.3Sn0.5NMn3.2, negative thermal expansion （NTE） was achieved in a wide temperature region covering room temperature （α = -6.8 ppm/K, 150 K-40 K）. Neutron pair distribution function analysis suggests the Cu/Sn-Mn bond fluctuation is the driving force for the NTE in Cu1- xSnxNMn3. In CuN1- xCxMn3 and CuNMn3 yCoy, the temperature coefficient of resistivity （TCR） decreases monotonically from positive to negative as Co or C content increases. TCR is extremely low when the composition approaches the critical points. For example, TCR is - 1.29 ppm/K between 240 K and 320 K in CuN0.95C0 05Mn3, which is one twentieth of that in the typical low-TCR materials （- 25 ppm/K）. By studying the critical scaling behavior and X deficiency effect, some clues of localized-electron magnetism have been found against the background of electronic itinerant magnetism.

Magnetoresistive behavior and magnetization reversal of NiFe/Cu/CoFe/IrMn spin valve GMRs in nanoscale

The magnetoresistance behavior and the magnetization reversal mode of NiFe/Cu/CoFe/IrMn spin valve giant magnetoresistance （SV-GMR） in nanoscale were investigated experimentally and theoretically by nanosized magnetic simulation methods. Based on the Landau-Lifshitz-Gilbert equation, a model with a special gridding was proposed to calculate the giant magnetoresistance ratio （MR） and investigate the magnetization reversal mode. The relationship between MR and the external magnetic field was obtained and analyzed. Studies into the variation of the magnetization distribution reveal that the magnetization reversal mode, that is, the jump variation mode for NiFe/Cu/CoFe/IrMn, depends greatly on the antiferromagnetic coupling behavior between the pinned layer and the antiferromagnetic layer. It is also found that the switching field is almost linear with the exchange coefficient.

Perfect GMR effect in gapped graphene-based ferromagnetic normal ferromagnetic junctions

We investigate the quantum transport property in gapped graphene-based ferromagnetic/normal/ferromagnetic （FG/NG/FG） junctions by using the Dirac-Bogoliubov-de Gennes equation. The graphene is fabricated on SiC and BN substrates separately, so carders in FG/NG/FG structures are considered as massive relativistic particles. Transmission prob- ability, charge, and spin conductances are studied as a function of exchange energy of ferromagnets （h）, size of graphene gap, and thickness of normal graphene region （L） respectively. Using the experimental values of Fermi energy in the normal graphene part （EFN - 400 meV） and energy gap in graphene （260 meV for SiC and 50 meV for BN substrate）, it is shown that this structure can be used for both spin-up and spin-down polarized current. The latter case has different behavior of gapped FG/NG/FG from that of gapless FG/NG/FG structures. Also perfect charge giant magnetoresistance is observed in a range of E FN - mv 2 F〈h〈E FN＋mv 2 F.

Spin-dependent transport induced by magnetization in zigzag graphene nanoribbons coupled to one-dimensional leads

We study spin transport in a zigzag graphene nanoribbon sample with two ferromagnetic strips deposited on the two sides of the ribbon. A tight-binding Hamiltonian was adopted to describe the sample connected to two one- dimensional leads. Our theoretical study shows that the resonance peaks of conductance for the spin-up and spin-down electrons are separated for the parallel configuration of the ferromagnetic strips, while they are not separated for the case of antiparallel configuration. This means that giant magnetoresistance can be produced at particular energies by altering the configurations of the ferromagnetic strips, and the device can be designed as a spin filter.

Effect of Co Ion Implantation on GMR of [NiFeCo(10 nm)/Ag(10 nm)]×20 Multilayer Film

The composition, phase structure and microstructure of the discontinuous multilayer film[NiFeCo（10 nm）/Ag（10 nm）]×20 were investigated after Co ion implantation and annealing at 280, 320,360 and 400℃, respectively.GMR （giant magnetoresistance） ratio of the film with/without Co ion implantation was measured. The results showed that Co ion implantation decreased the granule size of the annealed multilayer film, and increased Hc value and GMR ratio of the multilayer film. After annealing at 360℃, the multilayer film [NiFeCo（10 nm）/Ag（10 nm）]×20 with/without Co ion implantation both exhibited the highest GMR ratio of 12.4%/11% under 79.6 kA/m of applied saturation magnetic field.

Transport Property of La_(0.67-x)Sm_xSr_(0.33)MnO_3 at Heavy Samarium Doping (0.40≤x≤0.60)

The influence of heavy samarion （Sm） doping （0.40≤x≤0.60） on magnetic and electric properties of La0.67-xSmxSr0.33MnO3 was investigated by measuring the magnetization-temperature （M - T） curves, magnetization-magnetic density （ M - H） curves, resistivity-temperature （ρ- T） curves and magnetoresistivity-temperature （ MR - T） curves of the samples under different temperatures. It is found that, form from long-range ferromagnetic order to spin-cluster glass with the increase of Sm doping amount, the samples transstate and anti-ferromagnetic state; and when x = 0.60, the transport property becomes abnormal under magnetic background; and the magnetic structure changes and extra magnetic coupling induced by doping leads to colossal magnetoresistance effect. The transport mechanism of metallic conduction at low temperature is mainly electron-magneton interaction and can be fitted by the formula ρ = ρ0 ＋ AT^4.5, and the insulatorlike transport mechanism on high temperature range is mainly the function of variable-range hopping and can be fitted by the formula ρ = ρ0exp（T0/T）^1/4. In the formulas above, p is resistivity, T is temperature, and A, ρ0, T0 are constants.

Intergranular Tunnelling and Field-Induced Percolation Fluctuation of Granular Composites （La1-zAgzMnO3）/（MnO2/Mn2O3）

We investigate the giant magnetoresistance of composites （La1-xAgzMnO3）1-υ（MnO2/Mn2O3）υ. The magnetoresistive property of the composites shows the characteristics of intergranular tunnelling. A conductivity leap has been observed around y = 0.7. The composite （La0.926Ag0.074MnO3）0.698（MnO2/Mn2O3）0.302 has been found to show the greatest magnetoresistance in the samples. Its room-temperature MR ratio reaches 24% under a field of 1.8T. These phenomena suggest a percolation transformation and a kind of field-induced fluctuation in percolation in the samples investigated.

Micromagnetic simulation for high field sensors with perpendicular magnetizations

In this paper, we present a micromagnetic design for high field sensors. The hard layer of the sensors is L10-FePt which is magnetized perpendicularly to film plane and the sense layer is NiFe which is magnetized in the film plane. The magnetization configurations of the hard and sense layers at different external magnetic fields have been simulated. In micromagnetic simulation, the sense field up to one tesla can be reached by using this sensor. We find that whether the sensor has a symmetric or an asymmetric field-sensing window is determined by the coercive field of the hard layer and the demagnetizing field of the sense layer.

Construction and Validation of Simple Magnetic Nanoparticle Detector Based on Giant Magnetoresistive Effect

The finding of giant magnetoresistive（GMR） effect develops a new field for the sensing application with magnetic nanoparticles（MNPs） labeling. A convenient GMR sensor was built with a permanent magnet to excite the MNPs in this work. The sensing element contained a Wheatstone bridge with the GMR material as one of its branches. The magnetic field from MNPs unbalanced the Wheatstone bridge. After being amplified, the output signals were recorded. The construction and optimization of the magnetoresistive sensing platform were discussed in detail. The detection of three kinds of MNPs validated the performance of the proposed GMR sensor. The sensor showed a fast response to the addition or removal of MNPs. Because of its simplicity, this kind of GMR sensor can be developed in a routine laboratory. The finding of this new GMR sensor will promote the development of the method of probing biomoleeules and the study on the biomolecular interaction after being labeled magnetically.

High efficiency giant magnetoresistive device based on two-dimensional MXene(Mn_(2)NO_(2))

Due to the unique electronic structure of half-metals,characterized by the conductivity of majority-spin and the band gap of minority-spin,these materials have emerged as suitable alternatives for the design of efficient giant magnetoresistive(GMR)devices.Based on the first-principles calculations,an excellent GMR device has been designed by using two-dimensional(2D)half-metal Mn_(2)NO_(2).The results show that Mn_(2)NO_(2)has sandwiched between the Au/nMn_(2)NO_(2)(n=1,2,3)/Au heterojunction and maintains its half-metallic properties.Due to the half-metallic characteristics of Mn_(2)NO_(2),the total current of the monolayer device can reach up to 1500 nA in the ferromagnetic state.At low voltage,the maximum GMR is observed to be 1.15×1031%.Further,by increasing the number of layers,the ultra-high GMR at low voltage is still maintained.The developed device is a spintronic device exhibiting the highest magnetoresistive ratio reported theoretically so far.Simultaneously,a significant negative differential resistance(NDR)effect is also observed in the heterojunction.Owing to its excellent half-metallic properties and 2D structure,Mn_(2)NO_(2)is an ideal energy-saving GMR material.