This paper uses an InGaAs graded buffer layer to solve the problem of lattice mismatch and device performance degradation. In the graded buffer layer, we choose the ＂transition layer＂ and the ＂cover layer＂ to acco...This paper uses an InGaAs graded buffer layer to solve the problem of lattice mismatch and device performance degradation. In the graded buffer layer, we choose the ＂transition layer＂ and the ＂cover layer＂ to accommodate the 3.9% mismatch. No threading dislocations were observed in the uppermost part of the epitaxial layer stack when using a transmission electron microscope （TEM）. We analyze the factors which influence the saturation current. Simulation data shows that the cells grown by metal organic vapor phase epitaxy （MOVPE） have considerable open circuit voltage, short circuit current, and photoelectric conversion efficiency. Finally we propose that InP may have great development potential as a substrate material.展开更多
Microcrystalline silicon（μc-Si：H） solar cell with graded band gap microcrystalline silicon oxide（μc-SiOx：H） buffer layer is prepared by plasma enhanced chemical vapor deposition and exhibits improved performan...Microcrystalline silicon（μc-Si：H） solar cell with graded band gap microcrystalline silicon oxide（μc-SiOx：H） buffer layer is prepared by plasma enhanced chemical vapor deposition and exhibits improved performance compared with the cell without it. The buffer layer moderates the band gap mismatch by reducing the barrier of the p/i interface, which promotes the nucleation of the i-layer and effectively eliminates the incubation layer, and then enhances the collection efficiency of the cell in the short wavelength region of the spectrum. The p/i interface defect density also decreases from 2.2 × 10^12cm^-2to 5.0 × 10^11cm^-2. This graded buffer layer allows to simplify the deposition process for the μc-Si：H solar cell application.展开更多
基金supported by the National Natural Science Foundation of China(No.61232009)
文摘This paper uses an InGaAs graded buffer layer to solve the problem of lattice mismatch and device performance degradation. In the graded buffer layer, we choose the ＂transition layer＂ and the ＂cover layer＂ to accommodate the 3.9% mismatch. No threading dislocations were observed in the uppermost part of the epitaxial layer stack when using a transmission electron microscope （TEM）. We analyze the factors which influence the saturation current. Simulation data shows that the cells grown by metal organic vapor phase epitaxy （MOVPE） have considerable open circuit voltage, short circuit current, and photoelectric conversion efficiency. Finally we propose that InP may have great development potential as a substrate material.
基金supported by the Key Basic Research Project of Hebei Province,China(Grant Nos.12963930D and 12963929D)the Natural Science Foundation of Hebei Province,China(Grant Nos.F2013201250 and E2012201059)the Science and Technology Research Projects of the Education Department of Hebei Province,China(Grant No.ZH2012030)
文摘Microcrystalline silicon（μc-Si：H） solar cell with graded band gap microcrystalline silicon oxide（μc-SiOx：H） buffer layer is prepared by plasma enhanced chemical vapor deposition and exhibits improved performance compared with the cell without it. The buffer layer moderates the band gap mismatch by reducing the barrier of the p/i interface, which promotes the nucleation of the i-layer and effectively eliminates the incubation layer, and then enhances the collection efficiency of the cell in the short wavelength region of the spectrum. The p/i interface defect density also decreases from 2.2 × 10^12cm^-2to 5.0 × 10^11cm^-2. This graded buffer layer allows to simplify the deposition process for the μc-Si：H solar cell application.
