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Carrier Transport Across Grain Boundaries in Polycrystalline Silicon Thin Film Transistors 被引量:1
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作者 陈勇 ZHANG Shuang +5 位作者 李璋 HUANG Hanhua WANG Wenfeng ZHOU Chao CAO Wanqiang 周郁明 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2016年第1期87-92,共6页
We established a model for investigating polycrystalline silicon(poly-Si) thin film transistors(TFTs).The effect of grain boundaries(GBs) on the transfer characteristics of TFT was analyzed by considering the nu... We established a model for investigating polycrystalline silicon(poly-Si) thin film transistors(TFTs).The effect of grain boundaries(GBs) on the transfer characteristics of TFT was analyzed by considering the number and the width of grain boundaries in the channel region,and the dominant transport mechanism of carrier across grain boundaries was subsequently determined.It is shown that the thermionic emission(TE) is dominant in the subthreshold operating region of TFT regardless of the number and the width of grain boundary.To a poly-Si TFT model with a 1 nm-width grain boundary,in the linear region,thermionic emission is similar to that of tunneling(TU),however,with increasing grain boundary width and number,tunneling becomes dominant. 展开更多
关键词 carrier transport grain boundaries thin film transistors polycrystalline silicon
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