Cementites decomposition of a pearlitic ductile cast iron during graphitization annealing heat treatment

Cementites decomposition of a pearlitic ductile cast iron during graphitization annealing heat treatment was investigated.Fractographies and microstructures of heat treated samples were observed using a scanning electron microscope and mechanical properties were measured by a universal tensile test machine.The results indicated that during isothermal annealing at 750°C,the tensile strength of pearlitic ductile cast iron was increased to a peak value at 0.5h,and decreased gradually thereafter but the elongation was enhanced with the increase of annealing time.Moreover,the diffusion coefficient of carbon atoms could be approximately calculated as 0.56μm2/s that could be regarded as the shortrange diffusion.As the holding time was short（0.5h）,diffusion of carbon atoms was incomplete and mainly occurred around the graphites where the morphology of cementites changed from fragmentized shape to granular shape.In addition,the ductile cast iron with tensile strength of 740MPa and elongation of 7% could be achieved after graphitization annealing heat treatment for 0.5h.Two principal factors should be taken into account.First,the decomposition of a small amount of cementites was beneficial for increasing the ductility up to elongation of 7%.Second,the diffusion of carbon atoms from cementites to graphites could improve the binding force between graphites and matrix,enhancing the tensile strength to 740 MPa.

Preparation and properties of polycrystalline silicon seed layers on graphite substrate

Polycrystalline silicon（poly-Si） seed layers were fabricated on graphite substrates by magnetron sputtering. It was found that the substrate temperature in the process of magnetron sputtering had an important effect on the crystalline quality,and 700℃was the critical temperature in the formation of Si（220） preferred orientation. When the substrate temperature is higher than 700℃,the peak intensity of X-ray diffraction（XRD） from Si（220） increases distinctly with the increasing of substrate temperature.Moreover,the XRD measurements indicate that the structural property and crystalline quality of poly-Si seed layers are determined by the rapid thermal annealing （RTA） temperatures and time.Specifically,a higher annealing temperature and a longer annealing time could enhance the Si（220） preferred orientation of poly-Si seed layers.