Modification of Classical SPM for Slightly Rough Surface Scattering with Low Grazing Angle Incidence

Based on the impedance/admittance rough boundaries, the reflection coefficients and the scattering cross section with low grazing angle incidence are obtained for both VV and HH polarizations. The error of the classical perturbation method at grazing angle is overcome for the vertical polarization at a rough Neumann boundary of infinite extent. The derivation of the formulae and the numerical results show that the backscattering cross section depends on the grazing angle to the fourth power for both Neumann and Dirichlet boundary conditions with low grazing angle incidence. Our results can reduce to that of the classical small perturbation method by neglecting the Neumann and Dirichlet boundary conditions.

Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction

This paper investigates the major structural parameters, such as crystal quality and strain state of （001）-oriented GaN thin films grown on sapphire substrates by metalorganic chemical vapour deposition, using an in-plane grazing incidence x-ray diffraction technique. The results are analysed and compared with a complementary out-of-plane x- ray diffraction technique. The twist of the GaN mosaic structure is determined through the direct grazing incidence t of （100） reflection which agrees well with the result obtained by extrapolation method. The method for directly determining the in-plane lattice parameters of the GaN layers is also presented. Combined with the biaxial strain model, it derives the lattice parameters corresponding to fully relaxed GaN films. The GaN epilayers show an increasing residual compressive stress with increasing layer thickness when the two dimensional growth stage is established, reaching to a maximum level of-0.89 GPa.

Small angle X-ray scattering beamline at SSRF

Beamline BL16B1 at Shanghai Synchrotron Radiation Facility(SSRF) is dedicated to studying the microstructure and dynamic processes of polymers, nanomaterials, mesoporous materials, colloids, liquid crystals,metal materials, etc. At present, SAXS, wide angle X-ray scattering(WAXS), simultaneous SAXS/WAXS,grazing incident SAXS, and anomalous SAXS techniques are available for end user to conduct diverse experiments at this beamline. The sample-to-detector distance is adjustable from 0.2 m to 5 m. The practicable q-range is 0.03–3.6 nm-1at incident X-ray of 10 ke V for conventional SAXS whilst a continuous q-region of0.06–33 nm-1can be achieved in simultaneous SAXS/WAXS mode. Time-resolved SAXS measurements in sub-second level was achieved by the beamline upgrating in 2013. This paper gives detailed descriptions about the status, performance and applications of the SAXS beamline.

In situ grazing-incidence small-angle X-ray scattering observation of block-copolymer templated formation of magnetic nanodot arrays and their magnetic properties

The fabrication of bit-patterned media （BPM） is crucial for new types of hard disk drives. The development of methods for the production of BPM is progressing rapidly. Conventional lithography reaches the limit regarding lateral resolution, and new routes are needed. In this study, we mainly focus on the dependence of the size and shape of magnetic nanodots on the Ar＋-ion etching duration, using silica dots as masks. Two-dimensional （2D） arrays of magnetic nanostructures are created using silica-filled diblock-copolymer micelles as templates. After the self-assembly of the micelles into 2D hexagonal arrays, the polymer shell is removed, and the SiO2 cores are utilized to transform the morphology into a （Co/Pt）2-multilayer via ion etching under normal incidence. The number of preparation steps is kept as low as possible to simplify the formation of the nanostructure arrays. High-resolution in situ grazing-incidence small-angle X-ray scattering （GISAXS） investigations are performed during the Ar＋-ion etching to monitor and control the fabrication process. The in situ investigation provides information on how the etching conditions can be improved for further ex situ experiments. The GISAXS patterns are compared with simulations. We observe that the dots change in shape from cylindrical to conical during the etching process. The magnetic behavior is studied by utilizing the magneto-optic Kerr effect. The Co/Pt dots exhibit different magnetic behaviors depending on their size, interparticle distance, and etching time. They show ferromagnetism with an easy axis of magnetization perpendicular to the film. A systematic dependence of the coercivitv on the dot size is observed.

Direct Solution of the Inverse Problem for Rough Surface Scattering

We consider the inverse scattering problem for a scalar wave field incident on a perfectly conducting one-dimensional rough surface. The Dirichlet Green function for the upper half-plane is introduced, in place of the free-space Green function, as the fundamental solution to the Helmholtz equation. Based on this half-plane Green function, two reasonable approximate operations are performed, and an integral equation is formulated to approximate the total field in the two-dimensional space, then to determine the profile of the rough surface as a minimum of the total field. Reconstructions of sinusoidal, non-sinusoidal and random rough surface are performed using numerical techniques. Good agreement of these results demonstrates that the inverse scattering method is reliable.

溶液法原位大面积制备钙钛矿光电薄膜成膜的同步辐射可视化结晶过程研究

溶液法是新型光电器件制备的重要手段,然而以钙钛矿半导体材料为代表的薄膜样品制备通常需要在手套箱环境下完成,传统的实验表征大多在空气环境下进行,这显然很难反映薄膜结构与器件性能间的真实关联,因此急需对溶液成膜过程的微结构演变开展原位实时研究.为了实现溶液法成膜中的结构与形貌的同步辐射掠入射广角散射实时观测,本文结合上海同步辐射光源线站布局,报道了一种基于手套箱的原位成膜观测装置,可实现标准手套箱环境(c(H_(2)O,O_(2))<1×10^(-6))下远程控制薄膜旋涂、涂布及样品后处理,并实时可视化监测微结构和形貌演变.基于该装置进行的钙钛矿薄膜狭缝涂布大面积成膜结晶过程的原位GIWAXS/GISAXS(gtrazing incidence wide and small angle X-ray scattering)可视化测试揭示了薄膜微结构转变的内在驱动力:钙钛矿薄膜沉积界面层的优化对提升钙钛矿成核速率、诱导结晶择优取向、形成晶粒有序堆叠等具有“共性作用”,同时在成膜过程中的新生中间相显著提升软晶格薄膜质量和稳定性.基于各层均采用卷对卷全溶液狭缝涂布方法制备的大面积全柔性三维钙钛矿薄膜太阳能电池转换效率提升至5.23%(单个器件面积约15 cm^(2)),为迄今报道的这一体系该尺寸的全溶液狭缝涂布柔性钙钛矿器件的最高器件效率之一.因而,基于该同步辐射原位GIWAXS/S/GISAXS装置可以获得控制薄膜生长界面特性和薄膜品质的关键工艺,指导优化制备薄膜的最佳工艺条件.

Hard X-ray focusing resolution and efficiency test with a thickness correction multilayer Laue lens

The multilayer Laue lens(MLL) is a diffractive focusing optical element which can focus hard X-rays down to the nanometer scale. In this study, a WSi_(2)/Si multilayer structure consisting of 1736 layers, with a 7.2-nm-thick outermost layer and a total thickness of 17 μm, is prepared by DC magnetron sputtering. Regarding the thin film growth rate calibration, we correct the long-term growth rate drift from 2 to 0.6%, as measured by the grazing incidence X-ray reflectivity(GIXRR). A one-dimensional line focusing resolution of 64 nm was achieved,while the diffraction efficiency was 38% of the-1 order of the MLL Shanghai Synchrotron Radiation Facility(SSRF) with the BL15U beamline.

Numerical study of the Ne-like Cr x-ray laser at 28.6nm

We investigate the Ne-like Cr x-ray laser at 28.6 nm by using a modified ID lagrangian hydrodynamic code MEDI03 coupled with an atomic physics data package and a 2D ray tracing code as a post-processor. The laser pumping configuration includes two prepulses and one main pulse. The first prepulse normally irradiates the target, while the second prepulse and the main pulse irradiate the target at grazing-incident angles. We predict that saturation can be achieved for the Ne-like Cr x-ray lasers with a total pumping energy of 125mJ, Good beam qualities with no deflecting angle and a small divergence angle of 5 mrad are observed.

Evaluation of both composition and strain distributions in InGaN epitaxial film using x-ray diffraction techniques

The composition and stain distributions in the InGaN epitaxial films are jointly measured by employing various x-ray diffraction （XRD） techniques, including out-of-plane XRD at special planes, in-plane grazing incidence XRD, and reciprocal space mapping （RSM）. It is confirmed that the measurement of （204） reflection allows a rapid access to estimate the composition without considering the influence of biaxial strain. The two-dimensional RSM checks composition and degree of strain relaxation jointly, revealing an inhomogeneous strain distribution profile along the growth direction. As the film thickness increases from 100 nm to 450 nm, the strain status of InGaN films gradually transfers from almost fully strained to fully relaxed state and then more In atoms incorporate into the film, while the near-interface region of InGaN films remains pseudomorphic to GaN.

数值模拟低掠角入射海面与船目标的双站散射

为研究风驱粗糙海面上有船目标时的双站散射 ,提出了一种结合广义前后向迭代方法 ( GFBM)与谱加速算法 ( SAA)快速求解双站散射的 Monte Carlo数值方法 ,计算了在 TE、TM锥形波低掠角入射在一维 Pierson- Moskowitz谱粗糙导体海面以及船目标存在时的双站散射 ,数值模拟了在低掠角入射条件下 ,包含多次散射传播的粗糙海面与目标的双站散射与极化、频率、视角和海面风速等参数的关系。

高斯粗糙表面低掠入射散射特性研究

该文针对传统解析法不能有效求解低掠入射下粗糙表面散射特性的问题,提出了一种高阶解析法,该算法基于表面散射场的高阶分量和表面轮廓函数的高阶Taylor级数展开。利用该算法,定量比较了同极化的高、低阶散射系数,讨论了低掠入射下不同粗糙度的散射特性,分析了低掠入射下高阶微扰法和高阶基尔霍夫法求解高斯粗糙面的修正效应,得出了高阶解析法可以很好求解低掠入射问题的结论。最后,还研究了同极化散射指数与掠入射角幂函数的拟合问题,修正了极化散射指数的经典表达式。

掠入射X射线散射法测量超光滑表面

介绍了掠入射X射线散射法(GXRS)测量超光滑表面的原理及基于商业用X射线衍射仪改造而成的实验装置。选择3片不同粗糙度的硅片作为实验样品,根据一级矢量微扰理论对各个样品所测量的散射分布进行处理。结果表明,GXRS法得到的样品功率谱密度函数(PSD)与使用原子力显微镜(AFM)所测量的结果基本相符。分析了探测器接收狭缝的宽度和入射光发散度对实验结果的影响,结果表明,在其他实验条件理想的情况下,当探测器接收狭缝宽度<0.02mm,入射光发散度<43″时,在空间频率>0.03μm-1的范围内,由其引起的PSD函数测量误差<2%。随着探测器接收狭缝宽度和入射光发散度的减小,测量误差呈指数迅速减小。在所测量的空间频率范围内,PSD函数的误差随频率的增加而减小,仪器的重复精度优于2.6%。

理想导体表面电磁散射的高阶微扰解

针对经典微扰法(SPM)求解粗糙表面电磁散射特性存在的问题,提出了一种基于二维表面场的一阶和二阶展开近似高阶微扰算法。用该法计算了高阶表面场分量的全极化后向散射SPM解和二阶场分量对水平极化双站及后向散射系数的修正解。研究了不同粗糙度下掠入射时高阶SPM求解的双站散射系数,以及不同方位角下高阶场量的散射特性。通过对合成场的修正,解决了近掠入射条件下散射系数计算的误差。数值计算结果证明该算法有效。

掠入射X射线散射方法与应用

描述了掠入射X射线散射的基本方法,包括掠入射X射线衍射、掠入射X射线反射和掠入射X射线漫散射方法。还对实验室进行掠入射X射线散射的实验几何进行了描述,并给出X射线掠入射方法在纳米薄膜材料研究中的应用。

Ge/Si(001)量子点组分的掠入射X射线反常衍射测量

利用掠入射X射线反常散射/衍射实验技术对Si(001)上生长的单层和双层Ge量子点的组分分布进行了直接测量;;结果显示;;在Si间隔层厚度为90nm时得到的双层Ge量子点与单层Ge量子点的组分及其分布特征是几乎相同的。

软X射线掠入射望远镜的成像质量评价

为了评价软X射线掠入射望远镜的成像质量,提出了一种利用ZEMAX和MATLAB相结合的像质评价方法。根据这种方法编写的像质评价程序不仅考虑了孔径衍射、几何像差和装调误差等因素对成像质量的影响,而且加入了望远镜面形误差和X射线散射效应的影响。利用勒让德-傅里叶多项式和用户自定义表面,在ZEMAX中建立带有面形误差的筒状反射镜表面模型,实现对真实面形的掠入射反射镜的仿真;根据Harvey-Shack散射理论建立了ZEMAX中的BSDF散射模型,实现对X射线散射的仿真。搭建X射线有限远成像实验装置,对像质评价程序进行了验证。实验结果和仿真结果对比表明实验光斑和仿真光斑的光强分布基本一致,以实验结果为基准,仿真光斑的半高全宽横向和纵向的相对误差分别为14.7%和11.3%。说明像质评价程序的仿真结果基本符合真实情况,对掠入射光学系统的设计和加工具有一定的指导意义。

锗硅量子点掠入射小角X射线散射研究

采用同步辐射X射线对MBE制备的锗硅量子点试样进行了掠入射小角X射线散射(GISAXS,grazing incidence small angle X-ray scattering)研究。根据AFM测量得到的量子点尺寸、形状和间距等参数,采用DWBA理论以及合适的分布函数,利用IsGISAXS程序对一维和二维GISAXS测量结果进行了模拟,模拟结果与实验数据符合很好,表明GISAXS是一种探测锗硅量子点尺寸、形状和分布等结构信息有效的方法。

分形粗糙表面掠入射时的全极化指数计算

为分析经典解析法不能有效求解掠入射时粗糙表面的散射特性,用高阶微扰法计算了二维分形导体表面的后向散射系数。计算值与测量值的比较证明了高阶微扰法的有效性。对不同粗糙度下掠入射时全极化指数的研究,获得了不同入射条件下极化指数与掠入射角余切函数曲线的拟合和有效表达式,修正了前人的结论,并发现用高阶解析法可区分粗糙表面的类型。

光学散射法表面特征的测量与分析

光学表面评价和检测对光学研究,尤其是短波段光学研究具有重要的意义。介绍了短波段掠入射表面散射线性模型,并根据这个理论,建立了软X射线掠入射表面逆散射模型。利用这个数学模型对由软X射线反射率计测得的数据进行计算,得到通过散射测量所获得的样品表面特征值,所测结果与WYKO测量结果吻合。测量结果表明:掠入射软X射线光学散射法能够较为精确地计算出光滑表面粗糙度和表面自相关函数,可以很直观地反应出光学表面形貌特征。

同步辐射小角X射线散射及其在材料研究中的应用

小角X射线散射(small angle X-ray scattering,SAXS)是研究物质内部一纳米到数百纳米甚至到微米尺度级别微观结构的有力工具。近年来随着我国同步辐射技术的不断发展,同步辐射SAXS技术被越来越多地应用到各种材料的研究领域。然而,由于SAXS图谱是倒空间的信号,并不像显微镜那么直观,也不如X射线衍射(XRD)那么被大家所熟知。简要介绍了SAXS的基本原理(稀疏体系、稠密体系),简短回顾了我国同步辐射小角散射线站的发展和进步。主要介绍了最近十余年基于同步辐射SAXS原位实时检测技术在高分子材料成型加工(结晶、取向性、周期性),原位SAXS和反常SAXS技术在合金相析出(成分、团簇尺寸),以及掠入射X射线散射在介孔薄膜(区域尺寸、位错因子)和有机光伏薄膜等领域中的典型应用,并展望了同步辐射SAXS技术的发展趋势及其在材料领域的应用前景。