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Cadmium(II)-1,4-phenylenediacetate Complex with Green Luminescence
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作者 XU Yan-Qing ZHOU You-Fu YUAN Da-Qiang HONG Mao-Chun 《Chinese Journal of Structural Chemistry》 SCIE CAS CSCD 北大核心 2006年第6期704-708,共5页
The title complex, formulated as {[Cd(pda)(phen)]·3H2O}, 1 (pda = 1,4-phenylenediacetate, phen = 1,10′-phenanthroline), has been hydrothermally synthesized and determimned by X-ray crystallography. Crystal... The title complex, formulated as {[Cd(pda)(phen)]·3H2O}, 1 (pda = 1,4-phenylenediacetate, phen = 1,10′-phenanthroline), has been hydrothermally synthesized and determimned by X-ray crystallography. Crystallographic data: triclinic, space group P1^-, a = 10.375 (7), b = 10.435(1), c = 12.040(1) A.α = 68.503(1), ,β= 86.371(1), γ= 66.231(1)°, Mr = 538.82, V = 1104.5(8) ,A^3, Z = 2, Dc = 1.620 g/cm^3,μ = 1.035 mm^-1, F(000) = 544, the final R = 0.0380 and wR = 0.0985 (w = 1/[σ^2(F0^2) + (0.0559P)^2 + 1.5319P], where P = (F0^2+ 2Fc^2)/3) based on 3444 observed reflections with I 〉2σ(I). Complex 1 features a two-dimensional layer. Fluorescent analysis reveals that it exhibits intense green luminescence with the maximum at around 516 nm. 展开更多
关键词 cadmium(Cadmium(Ⅱ)-1 4-phenylenediacetate Complex with green luminescence crystal structure coordination polymer FLUORESCENCE
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Deep level defects in unintentionally doped 4H-SiC homoepitaxial layer
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作者 贾仁需 张义门 +2 位作者 张玉明 王悦湖 张林 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2009年第3期23-25,共3页
Unintentionally doped 4H-SiC homoepitaxial layers grown by hot-wall chemical vapor deposition (HWCVD) have been studied using photoluminescence (PL) technique in the temperature range of 10 to 240 K. A broadband g... Unintentionally doped 4H-SiC homoepitaxial layers grown by hot-wall chemical vapor deposition (HWCVD) have been studied using photoluminescence (PL) technique in the temperature range of 10 to 240 K. A broadband green luminescence has been observed. Vacancies of carbon (Vc) are revealed by electron spin resonance (ESR) technique at 110 K. The results strongly suggest that the green band luminescence, as shallow donor-deep accepter emission, is attributed to the vacancies of C and the extended defects. The broadband green luminescence spectrum can be fitted by the two Gauss-type spectra using nonlinear optimization technique. It shows that the broad-band green luminescence originates from the combination of two independent radiative transitions. The centers of two energy levels are located 2.378 and 2.130 eV below the conduction band, respectively, and the ends of two energy levels are expanded and superimposed each other. 展开更多
关键词 4H-SiC Homoepitaxial layers broadband green luminescence vacancies of carbon deep level defects
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