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Grain Growth Behavior of 5Cr21Mn9Ni4N Steel Micro-Alloyed by Rare Earth 被引量:3
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作者 Yu Shichang Wu Shenqing +4 位作者 Gong Youjun Gong Yuansheng Lian Mingsheng Ye Gang Cheng Yijun 《Journal of Rare Earths》 SCIE EI CAS CSCD 2006年第1期120-120,共1页
Grain growth behavior of 5Cr21Mn9Ni4NRE steel was experimentally studied at various solid solution treatment temperatures and holding for different times. The experimental results show that the 5Cr21Mn9Ni4NRE steel ha... Grain growth behavior of 5Cr21Mn9Ni4NRE steel was experimentally studied at various solid solution treatment temperatures and holding for different times. The experimental results show that the 5Cr21Mn9Ni4NRE steel has the feature of sharp austenite grain coarsening after solid solution treatment at the temperature above 1150 ℃. RE added in the steel has the benefit to restrain grain growth and increase grain growth activation energy. 展开更多
关键词 solid solution treatment Rockwell hardness grain growth grain growth exponent rare earths
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Deposition pressure effect on the surface roughness scaling of microcrystalline silicon films
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作者 朱志立 丁艳丽 +2 位作者 王志永 谷锦华 卢景霄 《Chinese Physics B》 SCIE EI CAS CSCD 2010年第10期403-407,共5页
The scaling behaviour of surface roughness evolution of microcrystalline silicon (/zc-Si:H) films prepared by very- high frequency plasma-enhanced chemical vapour deposition (VHF-PECVD) has been investigated by u... The scaling behaviour of surface roughness evolution of microcrystalline silicon (/zc-Si:H) films prepared by very- high frequency plasma-enhanced chemical vapour deposition (VHF-PECVD) has been investigated by using a spectroscopic eHipsometry (SE) technique. The growth exponent β was analysed for the films deposited under different pressures Pg. The results suggest that films deposited at Pg = 70 Pa have a growth exponent β about 0.22, which corresponds to the definite diffusion growth. However, abnormal scaling behaviour occurs in the films deposited at Pg = 300 Pa. The exponent β is about 0.81 that is much larger than 0.5 of zero diffusion limit in the scaling theory. The growth mode ofμc-Si:H deposited at Pg = 300 Pa is clearly different from that of μc-Si:H at Pg = 70 Pa. Monte Carlo simulations indicate that the sticking process and the surface diffusion of the radicals are two key factors to affect the growth mode under different pressures. Under Pg = 300 Pa, β〉 0.5 is correlated with the strong shadowing effect resulting from the larger sticking coefficient. 展开更多
关键词 microcrystalline Si thin film spectroscopic ellipsometry the growth exponent MonteCarlo simulations
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On Asynchronous Exponential Stability of C_0 Semigroups
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作者 LIU Jia Dept. Math., Shanxi University, Taiyuan, 030006 《Systems Science and Systems Engineering》 CSCD 1998年第3期42-47,共6页
A C 0 semigroup T (t) in Banach space is called to have asynchronous exponent growth with intrinsic growth constant λ 0 if there exists a nonzero finite rank operator P in X such that lim t→∞T (t) = P. Ch... A C 0 semigroup T (t) in Banach space is called to have asynchronous exponent growth with intrinsic growth constant λ 0 if there exists a nonzero finite rank operator P in X such that lim t→∞T (t) = P. Characteristic conditions are established in Hilbert space for T (t), to have asynchronous exponent growth. 展开更多
关键词 0 semigroup STABILITY asynchronous exponent growth
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