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Optimization of heat shield for single silicon crystal growth by using numerical simulation 被引量:1
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作者 TENG Ran ZHOU Qigang +5 位作者 DAI Xiaolin WU Zhiqiang XU Wenting XIAO Qinghua WU Xiao GUO Xi 《Rare Metals》 SCIE EI CAS CSCD 2012年第5期489-493,共5页
In integrated circuit-grade single silicon Czochralski growth, the position and material of heat shield are main parameters affecting the heat exchange and crystal growth condition. By optimizing the above parameters,... In integrated circuit-grade single silicon Czochralski growth, the position and material of heat shield are main parameters affecting the heat exchange and crystal growth condition. By optimizing the above parameters, we attempted to increase the growth rate and crystal quality. Numerical simulation proved to verify the results before and after optimization. Through analyses of the temperature and microdefect distribution, it is found that the optimized heat shield can further increase the pulling rate and decrease the melt/crystal interface deflection, increase the average velocity of argon flow from ~2 to ~5 m&middots-1, which is in favor of the transportation of SiO, and obtain the low defects concentration crystal and that the average temperature along the melt-free surface is 8 °C higher than before avoiding supercooled melt effectively. © The Nonferrous Metals Society of China and Springer-Verlag Berlin Heidelberg 2012. 展开更多
关键词 Computer simulation Crystal growth from melt OPTIMIZATION Semiconducting silicon SILICON Silicon oxides
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Rapid Dendrite Growth in Solidification of Highly Undercooled Alloys 被引量:1
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作者 AN Hong’en YANG Jine +1 位作者 ZHANG Xiaobing YANG Shaopei 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2021年第2期259-261,共3页
Nonequilibrium thermodynamics and transportation kinetics near the propagating solid-liquid interface dominates the rapid solidification process,which is far from a thermodynamically stable state.Rapid solidification ... Nonequilibrium thermodynamics and transportation kinetics near the propagating solid-liquid interface dominates the rapid solidification process,which is far from a thermodynamically stable state.Rapid solidification process can be described more precisely using quantitative thermodynamic calculation of phase diagram with nonlinear liquidus and solidus and evaluating the nonequilibrium effect in diffusion kinetics.Based on these basic principles,we used a current nonequilibrium dendrite growth model to describe rapid solidification process of deeply undercooled alloys.Evolution of the key fundamental solidification parameters was also evaluated. 展开更多
关键词 solid solutions SOLIDIFICATION growth from melt natural crystal growth
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Growth and Spectral Characteristics of Yb^(3+)-doped LiGd(MoO_4)_2 Crystal 被引量:1
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作者 黄新阳 王国富 《Chinese Journal of Structural Chemistry》 SCIE CAS CSCD 2010年第6期853-860,共8页
The Yb3+-doped LiGd(MoO4)2 crystal with the size up to Φ20×30 mm3 has been grown by Czochralski technique.The polarized room temperature absorption and emission spectra have been investigated.This crystal exh... The Yb3+-doped LiGd(MoO4)2 crystal with the size up to Φ20×30 mm3 has been grown by Czochralski technique.The polarized room temperature absorption and emission spectra have been investigated.This crystal exhibits a broad absorption band centered at 975 nm with an FWHM of 43 and 59 nm for π-and σ-polarization,respectively,and the corresponding maximal absorption cross-sections are 3.36 and 2.42×10-20 cm2.The emission broadband has an FWHM of 47 and 54 nm for π-and σ-polarization,respectively,with the corresponding emission cross sections of 3.92 and 3.34 × 10-20 cm2 at 1020 nm.The measured fluorescence lifetime is 287 μs. 展开更多
关键词 optical microscopy growth from melt MOLYBDATE solid state laser materials
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Growth,Structure,and Spectroscopic Characteristics of the Nd^(3+):LiGd(WO_4)_2 Crystal 被引量:1
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作者 黄新阳 王国富 《Chinese Journal of Structural Chemistry》 SCIE CAS CSCD 2011年第1期85-96,共12页
The Nd^3+:LiGd(WO4) 2 crystal with dimensions of 25mm×28mm×16mm was grown by the top-seeded solution growth method from the 60 mol% Li2W2O7 flux. LiGd(WO4) 2 crystallizes in the tetragonal system with ... The Nd^3+:LiGd(WO4) 2 crystal with dimensions of 25mm×28mm×16mm was grown by the top-seeded solution growth method from the 60 mol% Li2W2O7 flux. LiGd(WO4) 2 crystallizes in the tetragonal system with space group I41/a(C4h^6) and cell parameters: a = 5.1986 and c = 11.2652A. The hardness is about 5.0 Mohs' scale. The specific heat is 0.40 J·g^-1·K^-1 at 50 oC. The thermal expansion coefficients for a-and c-axes are 1.314×10^-5 and 2.052×10^-5 K^-1,respectively. The room-temperature polarized absorption and emission spectra and the fluorescence decay curve was measured. The parameters of oscillator strengths,the spontaneous transition probabilities,the fluorescence branching ratios,the radiative lifetimes,and the emission cross sections have been investigated based on Judd-Ofelt theory and Füchtbauer-Ladenburg method. The absorption cross-section is 5.19×10^-20 cm^2 at 805 nm for π-polarization and its line width is 15 nm; the emission cross section is 1.726×10^-19 cm^2 at 1060.5 nm for π-polarization. The fluorescence and radiative lifetimes are 86 and 158 μs,respectively. The fluorescence quantum efficiency is 54.43%. 展开更多
关键词 optical microscopy growth from melt Nd^3+:LiGd(WO4)2 crystal solid state laser materials
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Advances of the Vertical Directional Solidification Technique for the Growth of High Quality GaSb Bulk Crystals 被引量:1
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作者 Dattatray Bhairu Gadkari 《Journal of Chemistry and Chemical Engineering》 2012年第1期65-73,共9页
Advantages of the detached phenomena have influenced researchers to modify the conventional methods to promote it on the earth. Since 1994, the vertical directional solidification (VDS) technique has been employed f... Advantages of the detached phenomena have influenced researchers to modify the conventional methods to promote it on the earth. Since 1994, the vertical directional solidification (VDS) technique has been employed for the growth of bulk crystals, without the seed, without contact to the ampoule wall, without coating and without external pressure. An automated furnace was designed and fabricated for the controlled temperature gradients, growth conditions and parameters. The typical ingots growths of GaSb have shown the gap of 20 μm-145 μm and mobility μn = 1125 cm^2/V.sec at 300 K. Mobility is highest and five times larger than the attached growths. Dislocation density is the order of 104/cm2 in the conical region, decreases in the direction of growth, and in many crystals reached less than 103/cm2. The spontaneous gap formation due to the meniscus depends on the pressure differences and thermal state. GaSb grown ingots have shown progress in the properties of crystal grown ever, and attributed to reduce thermal stress without contact to the ampoule wall. 展开更多
关键词 SOLIDIFICATION growth from melt ANTIMONIDES semiconduction Ⅲ-Ⅴ crystal structure detached growth.
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Analysis of Acoustic Emission Signals Accompanying Growth of Single Aluminum Crystals: Experimental Results and Theoretical Model of the Cluster
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作者 Vorontsov Vadlm Bonsovlch Zhuravlev Danila Victorovich 《Journal of Chemistry and Chemical Engineering》 2012年第4期358-362,共5页
The purpose of the work is to identify the acoustic emission (AE) signal in the melt and from the interphase during the crystal growth and to establish the connection between issue parameters: the number of signal ... The purpose of the work is to identify the acoustic emission (AE) signal in the melt and from the interphase during the crystal growth and to establish the connection between issue parameters: the number of signal events of frequency and the signal power with the growth conditions of temperature gradient and crystallization rate. Experiments on single crystal growth were carried out using hardware and software system which allows to perform spectral Fourier analysis of AE signals and to simultaneously remove the cooling curve for the entire period of crystallization. On the basis of spectral analysis of AE signals, a theoretical model of clusters in the aluminum melt was designed. The experimental results indicate an uneven abrupt advancement of the interface according to the configuration of each individual cluster. 展开更多
关键词 growth models interfaces surface growth from melt single crystal growth Bridgman growth acoustic emission method METALS sound conductor.
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Advances of the Vertical Directional Solidification Technique for the Growth of High Quality InSb Bulk Crystals
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《Journal of Chemistry and Chemical Engineering》 2012年第3期250-258,共9页
Since 1994, the vertical directional solidification (VDS) technique is employed for the growths of bulk crystals-without the seed, without contact to the ampoule wall, without coating and without external pressure, ... Since 1994, the vertical directional solidification (VDS) technique is employed for the growths of bulk crystals-without the seed, without contact to the ampoule wall, without coating and without external pressure, which leads to the detached growth. Growth velocities ranged from 3 mm/h to 10 mm/h, and rotation rates 10-20 rpm have been used. Ingots, 10-20 mm diameter and 60-65 mm length, have been grown with the conical ampoule geometry and these ingots have shown symmetric detachment. Crystals grown under such conditions showed the relatively low dislocation density and the highest carrier mobility,/tn = 5.9 x 104 cm2"Vl-sl than the crystal grown ever. For the detached crystals, the dislocation density is 104 cm"2 in conical region, and reached less than 103 cm-2 in the direction of the growth, when the ingots are not in contact with the ampoule wall. Experiments for indium-antimonide (InSb) growth have shown that the 80% growth environments have detachment, 15% entrapped in conical region and 5% attached. 展开更多
关键词 ANTIMONIDES growth from melt SOLIDIFICATION DETACHMENT crystal structure semiconductor indium compound.
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Computational Study of Induction Heating Process in Crystal Growth Systems—The Role of Input Current Shape
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作者 Mohammad Hossein Tavakoli Tayebe Nadery Mostagir 《Crystal Structure Theory and Applications》 2012年第3期114-120,共7页
A set of 2D steady state finite element numerical simulations of electromagnetic fields and heating distribution for an oxide Czochralski crystal growth system was carried out for different input current shapes (sine,... A set of 2D steady state finite element numerical simulations of electromagnetic fields and heating distribution for an oxide Czochralski crystal growth system was carried out for different input current shapes (sine, square, triangle and sawtooth waveforms) of the induction coil. Comparison between the results presented here demonstrates the importance of input current shape on the electromagnetic field distribution, coil efficiency, and intensity and structure of generated power in the growth setup. 展开更多
关键词 A1. Computer Simulation A1. Induction Heating A2. CZOCHRALSKI Method A2. growth from melt B1. Metals
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Ce∶LiNbO_3晶体的生长及其位相共轭效应 被引量:9
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作者 金光海 李铭华 +2 位作者 孙光跃 徐玉恒 高元恺 《人工晶体学报》 EI CAS CSCD 1992年第4期362-366,共5页
本文报道了 Ce:LiNbO_3晶体的生长及其光折变效应。实验表明,Ce:LiNbO_3晶体具有较高的光灵敏度,优异的位相共轭效应,以及光束在空间分布均匀的特点。通过简并四波混频(DFWM)过程研究了 Ce:LiNbO_3晶体光折变效应的温度效应,并对其机理... 本文报道了 Ce:LiNbO_3晶体的生长及其光折变效应。实验表明,Ce:LiNbO_3晶体具有较高的光灵敏度,优异的位相共轭效应,以及光束在空间分布均匀的特点。通过简并四波混频(DFWM)过程研究了 Ce:LiNbO_3晶体光折变效应的温度效应,并对其机理进行了初步的探讨。 展开更多
关键词 光学 晶体 晶体生长 共轭
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轴向磁场对硅单晶Czochralski生长过程的影响 被引量:8
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作者 李友荣 余长军 +1 位作者 吴双应 彭岚 《材料研究学报》 EI CAS CSCD 北大核心 2005年第3期249-254,共6页
利用有限元方法对炉内的传递过程进行了全局数值模拟,假定熔体和气相中的流动都为准稳态轴对称层流,熔体为不可压缩流体,Cz炉外壁温度维持恒定,模拟磁场强度范围为(0-0.3)T,研究了用Czochralski(Cz)法生长单晶硅轴向磁场对熔体流动和氧... 利用有限元方法对炉内的传递过程进行了全局数值模拟,假定熔体和气相中的流动都为准稳态轴对称层流,熔体为不可压缩流体,Cz炉外壁温度维持恒定,模拟磁场强度范围为(0-0.3)T,研究了用Czochralski(Cz)法生长单晶硅轴向磁场对熔体流动和氧传输过程的影响.结果表明:轴向磁场可有效地抑制熔体内的流动,但增大加热器功率和结晶界面处晶体内的轴向温度梯度;对于常规Cz炉,轴向磁场可增大结晶界面平均氧浓度,而对于具有气体导板的Cz炉,则会减小结晶界面平均氧浓度. 展开更多
关键词 材料科学基础学科 全局分析 有限元方法 硅Cz炉 轴向磁场
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准单畴YBCO超导体工艺性能研究和微观分析 被引量:2
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作者 沙建军 郁金南 +2 位作者 郁刚 韩华 罗金汉 《原子能科学技术》 EI CAS CSCD 2001年第2期116-120,共5页
采用熔融织构生长法 (MTG)结合顶部籽晶工艺 (TSP)制备了不同Y 2 11粒子含量的准单畴熔融织构的YBCO块材 ,样品致密度高 ,机械强度好。VSM测量结果表明 :样品在 30K、0 6T下 ,临界电流密度JC 达到 1 2 3× 10 6A/cm2 ;在 70K、2T下... 采用熔融织构生长法 (MTG)结合顶部籽晶工艺 (TSP)制备了不同Y 2 11粒子含量的准单畴熔融织构的YBCO块材 ,样品致密度高 ,机械强度好。VSM测量结果表明 :样品在 30K、0 6T下 ,临界电流密度JC 达到 1 2 3× 10 6A/cm2 ;在 70K、2T下 ,JC 为 1 35× 10 4 A/cm2 ,且JC 对磁场不敏感。SEM分析结果表明 :Y 2 11相的掺杂能够改善织构样品的生长状况 ,同时 ,掺杂的Y 2 11粒子又能作为强的钉扎中心 ;所制备的样品中Y 2 11粒子分布越均匀 ,尺寸越小 。 展开更多
关键词 准单畴 熔融织构 YBCO超导体 临界电流密度 钉扎中心 聚变堆材料 熔融织构生长法
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铝合金熔体原位氧化构筑模糊界面复相陶瓷/金属复合材料 被引量:2
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作者 谷臣清 张钱城 赵敬忠 《复合材料学报》 EI CAS CSCD 北大核心 2004年第2期34-39,共6页
 采用K2CO3浸渗碳粉、石墨覆盖合金熔体液面,预设多孔陶瓷体输通空气,实现了铝合金熔体由表面向其内部推进的原位自氧化反应。反应生成物致密,周边宏观表面平整,生长体前沿无高低不平的胞状堆积现象。经显微组织观察、微区波谱成分分析...  采用K2CO3浸渗碳粉、石墨覆盖合金熔体液面,预设多孔陶瓷体输通空气,实现了铝合金熔体由表面向其内部推进的原位自氧化反应。反应生成物致密,周边宏观表面平整,生长体前沿无高低不平的胞状堆积现象。经显微组织观察、微区波谱成分分析及X射线衍射结构分析发现:反应生成物是以柱状晶团形式生长,而柱状晶则由微米级的块、粒状氧化物构成。氧化物的组成以Al2O3为主,含少量SiO2,在两相及块、粒之间成分呈连续过渡变化,无明显清晰的分界,且有以Al2O3包覆SiO2生长的倾向,并表现出很强的定向性。铝合金金属相则主要分布于柱状晶团交界处。 展开更多
关键词 熔体氧化生长 复合材料 模糊界面 原位反应生长 包覆
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α-甘氨酸单晶体生长及快速结晶方法研究 被引量:2
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作者 李志远 韦丽红 《人工晶体学报》 EI CAS CSCD 1995年第2期132-135,共4页
本文提出使用非离子表面活性剂从3%~20%的乙醇中培养α-甘氨酸单晶体的新方法。研究了其结晶过程,改进了结晶条件,大大缩短了结晶时间。探讨了甘氨酸初始浓度、乙醇用量、结晶温度对结晶过程的影响,得到了最佳控制参数。晶体... 本文提出使用非离子表面活性剂从3%~20%的乙醇中培养α-甘氨酸单晶体的新方法。研究了其结晶过程,改进了结晶条件,大大缩短了结晶时间。探讨了甘氨酸初始浓度、乙醇用量、结晶温度对结晶过程的影响,得到了最佳控制参数。晶体纯度为99.9wt-%,产率大于92%,α-甘氨酸晶体率100%,氯含量为0.001wt-%。 展开更多
关键词 非线性光学晶体 晶体生长 甘氨酸 单晶 结晶
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石榴石晶体生长过程的生长动力学模型 被引量:8
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作者 刘永才 Simon Brandon 《人工晶体学报》 EI CAS CSCD 北大核心 1999年第1期8-16,共9页
本文开发了一种基于边界保角变换技术的有限元方法来研究熔体法石榴石晶体生长过程中界面动力学的影响。建立了一个可导致界面上小面形成的动力学模型,该模型可处理界面上粗糙面区域和光滑面区域共存的复杂情况。模型中小面区域的动力... 本文开发了一种基于边界保角变换技术的有限元方法来研究熔体法石榴石晶体生长过程中界面动力学的影响。建立了一个可导致界面上小面形成的动力学模型,该模型可处理界面上粗糙面区域和光滑面区域共存的复杂情况。模型中小面区域的动力学系数与界面上的过冷度及取向角均有关。计算结果显示了小面的形成和界面上各向异性的过冷度分布。 展开更多
关键词 动力学模型 石榴石晶体 晶体生长
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K^+,Yb^(3+):BaWO_4晶体光谱性能研究
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作者 臧竞存 谢丽艳 +5 位作者 邹玉林 刘国庆 吕超 刘玉龙 冯宝华 陈雨金 《北京工业大学学报》 EI CAS CSCD 北大核心 2008年第11期1185-1190,共6页
为提高Yb^(3+)离子在BaWO_4晶体中的掺入量,采用了双掺K^+离子的方法,增大Yb^(3+)离子的分凝系数,使K^+(x(K^+)=0.01),Yb^(3+)(x(Yb^(3+))=0.02):BaWO_4晶体在977 nm处的吸收系数达到α=0.494 cm^(-1).研究了波长为930 nm的LD激光抽运... 为提高Yb^(3+)离子在BaWO_4晶体中的掺入量,采用了双掺K^+离子的方法,增大Yb^(3+)离子的分凝系数,使K^+(x(K^+)=0.01),Yb^(3+)(x(Yb^(3+))=0.02):BaWO_4晶体在977 nm处的吸收系数达到α=0.494 cm^(-1).研究了波长为930 nm的LD激光抽运时相应于Yb^(3+)离子~2F_(5/2)→~2F_(7/2)跃迁的960~1 020 nm的荧光光谱,其在1 005 nm处的发射截面σ_(?)=6.286 pm^2,荧光寿命为0.4 ms.实验表明K^+,Yb^(3+):BaWO_4是一种新型近红外激光晶体。 展开更多
关键词 熔体中晶体生长 钡化合物 荧光
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四方相PMNPT单晶的生长和结构
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作者 许桂生 沈关顺 +4 位作者 齐振一 乐秀宏 李金龙 仲维卓 殷之文 《人工晶体学报》 EI CAS CSCD 北大核心 1997年第3期309-309,共1页
四方相PMNPT单晶的生长和结构许桂生罗豪沈关顺齐振一乐秀宏李金龙仲维卓殷之文(中国科学院上海硅酸盐研究所,上海201800)GrowthandStructureofSingleCrystalPMNPTXuGuis... 四方相PMNPT单晶的生长和结构许桂生罗豪沈关顺齐振一乐秀宏李金龙仲维卓殷之文(中国科学院上海硅酸盐研究所,上海201800)GrowthandStructureofSingleCrystalPMNPTXuGuishengLuoHaosuShenG... 展开更多
关键词 压电晶体 晶体生长 铁电体 铌镁酸铅
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Zn:Fe:LiNbO_3单晶的坩埚下降法生长及其成分研究
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作者 夏海平 王金浩 +4 位作者 曾宪林 章践立 张约品 徐键 聂秋华 《硅酸盐学报》 EI CAS CSCD 北大核心 2004年第5期594-598,共5页
通过优选合适的化学原料,用坩埚下降法生长出了无宏观缺陷的Zn∶Fe∶LiNbO3(Zn∶Fe∶LN)单晶。生长的工艺参数是:用微凸生长界面生长,生长速度为1~3mm/h,温度梯度为20~30℃/cm。用X射线衍射及DTA对晶体进行了分析;测定了晶体的吸收光... 通过优选合适的化学原料,用坩埚下降法生长出了无宏观缺陷的Zn∶Fe∶LiNbO3(Zn∶Fe∶LN)单晶。生长的工艺参数是:用微凸生长界面生长,生长速度为1~3mm/h,温度梯度为20~30℃/cm。用X射线衍射及DTA对晶体进行了分析;测定了晶体的吸收光谱。结果表明:所有Zn∶Fe∶LN晶体中的Fe2+浓度沿生长方向增加;掺杂3%ZnO(摩尔分数)的Zn∶Fe∶LN单晶中的Fe2+浓度沿生长方向的变化量比掺杂6%ZnO的大。从坩埚下降法的温场特点、晶体的热处理过程、环境气氛,以及ZnO组分对Fe离子的排斥作用解释了产生Fe2+离子浓度变化的原因。 展开更多
关键词 锌铁双掺铌酸锂晶体 熔体晶体生长 坩埚下降法
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Cr^(3+)∶LiNbO_3单晶的坩埚下降法生长及其特征研究
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作者 夏海平 王金浩 +4 位作者 曾宪林 章践立 张约品 徐键 聂秋华 《功能材料》 EI CAS CSCD 北大核心 2005年第2期238-240,共3页
用坩埚下降法技术,选用同成分化学计量的铌酸锂为初始原料,在合适的生长速度(1~4mm/h)与温度梯度(20~30℃/cm)下成功地生长出了无宏观缺陷、掺杂不同Cr3+离子浓度的铌酸锂单晶。测定了晶体的吸收光谱。Cr3+ 离子在晶体中以三价态存在,... 用坩埚下降法技术,选用同成分化学计量的铌酸锂为初始原料,在合适的生长速度(1~4mm/h)与温度梯度(20~30℃/cm)下成功地生长出了无宏观缺陷、掺杂不同Cr3+离子浓度的铌酸锂单晶。测定了晶体的吸收光谱。Cr3+ 离子在晶体中以三价态存在,沿着生长方向晶体中 Cr3+ 离子的含量逐步减少。用顺磁共振谱(EPR)研究了晶体中 Cr3+离子的格位情况,结果表明Cr3+离子取代 Li 与 Nb 两种格位。测定了晶体的发射光谱并研究了发射强度随吸收强度的变化关系。 展开更多
关键词 掺铬铌酸锂晶体 熔体晶体生长 坩埚下降法 格位 光谱
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Bi:Bi_(12)SiO_(20)晶体的光折变效应研究
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作者 李铭华 宋磊 +1 位作者 刘劲松 安毓英 《人工晶体学报》 EI CAS CSCD 1994年第2期160-164,共5页
根据Bi_12SiO_20(BSO)晶体生长中出现的缺陷,确定了合理的生长工艺条件,生长出优质的Bi:Bi_12SiO_20(Bi:BSO)晶体。测试了晶体的指教增益系数、衍射效率、相位共轭反射率和响应时间等光折变性... 根据Bi_12SiO_20(BSO)晶体生长中出现的缺陷,确定了合理的生长工艺条件,生长出优质的Bi:Bi_12SiO_20(Bi:BSO)晶体。测试了晶体的指教增益系数、衍射效率、相位共轭反射率和响应时间等光折变性能。研究表明,Bi:BSO晶体的光折变性能优于纯BSO晶体。 展开更多
关键词 硅酸铋 晶体生长 光折变效应
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助熔剂法生长片状硼酸铁单晶及其磁光性能
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作者 张志良 张守业 徐明祥 《人工晶体学报》 EI CAS CSCD 1995年第3期242-244,共3页
本文采用助熔剂法,从Fe_2O_3-B_2O_3-PbO/PhF_2系统中生长出片状弱铁磁性FeBO_3晶体。用磁光调制倍频法测出FeBO_3单晶在可见光区的法拉第旋转谱,并用分光光度计测出该晶体的光吸收谱,得出表征... 本文采用助熔剂法,从Fe_2O_3-B_2O_3-PbO/PhF_2系统中生长出片状弱铁磁性FeBO_3晶体。用磁光调制倍频法测出FeBO_3单晶在可见光区的法拉第旋转谱,并用分光光度计测出该晶体的光吸收谱,得出表征材料磁光性能的优值与波长的关系,并对FeBO_3晶体生长与磁光性能作了讨论。 展开更多
关键词 晶体生长 助熔剂法 磁光性能 磁光材料
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