Anomalous Hall effect and electronic correlation in a spin-reoriented kagome antiferromagnet LuFe_(6)Sn_(6)

The kagome lattice system has been identified as a fertile ground for the emergence of a number of new quantumstates,including superconductivity,quantum spin liquids,and topological electronic states.This has attracted significantinterest within the field of condensed matter physics.Here,we present the observation of an anomalous Hall effect in aniron-based kagome antiferromagnet LuFe_(6)Sn_(6),which implies a non-zero Berry curvature in this compound.By means ofextensive magnetic measurements,a high Neel temperature,T_(N)=552 K,and a spin reorientation behavior were identifiedand a simple temperature-field phase diagram was constructed.Furthermore,this compound was found to exhibit a largeSommerfeld coefficient ofγ=87 mJ·mol^(-1)·K^(-2),suggesting the presence of a strong electronic correlation effect.Ourresearch indicates that LuFe_(6)Sn_(6)is an intriguing compound that may exhibit magnetism,strong correlation,and topologicalstates.

Anomalous valley Hall effect in two-dimensional valleytronic materials

The anomalous valley Hall effect(AVHE)can be used to explore and utilize valley degrees of freedom in materials,which has potential applications in fields such as information storage,quantum computing and optoelectronics.AVHE exists in two-dimensional(2D)materials possessing valley polarization(VP),and such 2D materials usually belong to the hexagonal honeycomb lattice.Therefore,it is necessary to achieve valleytronic materials with VP that are more readily to be synthesized and applicated experimentally.In this topical review,we introduce recent developments on realizing VP as well as AVHE through different methods,i.e.,doping transition metal atoms,building ferrovalley heterostructures and searching for ferrovalley materials.Moreover,2D ferrovalley systems under external modulation are also discussed.2D valleytronic materials with AVHE demonstrate excellent performance and potential applications,which offer the possibility of realizing novel low-energy-consuming devices,facilitating further development of device technology,realizing miniaturization and enhancing functionality of them.

Multi-functional photonic spin Hall effect sensor controlled by phase transition

Photonic spin Hall effect(PSHE), as a novel physical effect in light–matter interaction, provides an effective metrological method for characterizing the tiny variation in refractive index(RI). In this work, we propose a multi-functional PSHE sensor based on VO_(2), a material that can reveal the phase transition behavior. By applying thermal control, the mutual transformation into different phase states of VO_(2) can be realized, which contributes to the flexible switching between multiple RI sensing tasks. When VO_(2) is insulating, the ultrasensitive detection of glucose concentrations in human blood is achieved. When VO_(2) is in a mixed phase, the structure can be designed to distinguish between the normal cells and cancer cells through no-label and real-time monitoring. When VO_(2) is metallic, the proposed PSHE sensor can act as an RI indicator for gas analytes. Compared with other multi-functional sensing devices with the complex structures, our design consists of only one analyte and two VO_(2) layers, which is very simple and elegant. Therefore, the proposed VO_(2)-based PSHE sensor has outstanding advantages such as small size, high sensitivity, no-label, and real-time detection, providing a new approach for investigating tunable multi-functional sensors.

Surface phonon resonance:A new mechanism for enhancing photonic spin Hall effect and refractive index sensor

Metal-based surface plasmon resonance(SPR)plays an important role in enhancing the photonic spin Hall effect(SHE)and developing sensitive optical sensors.However,the very large negative permittivities of metals limit their applications beyond the near-infrared regime.In this work,we theoretically present a new mechanism to enhance the photonic SHE by taking advantage of SiC-supported surface phonon resonance(SPhR)in the mid-infrared regime.The transverse displacement of photonic SHE is very sensitive to the wavelength of incident light and the thickness of SiC layer.Under the optimal parameter setup,the calculated largest transverse displacement of SiC-based SPhR structure reaches up to 163.8 ym,which is much larger than the condition of SPR.Moreover,an NO_(2) gas sensor based on the SPhR-enhanced photonic SHE is theoretically proposed with the superior sensing performance.Both the intensity and angle sensitivity of this sensor can be effectively manipulated by varying the damping rate of SiC.The results may provide a promising paradigm to enhance the photonic SHE in the mid-infrared region and open up new opportunity of highly sensitive refractive index sensors.

Intrinsic valley-polarized quantum anomalous Hall effect in a two-dimensional germanene/MnI_(2) van der Waals heterostructure

Valley-polarized quantum anomalous Hall effect(VQAHE), combined nontrivial band topology with valleytronics,is of importance for both fundamental sciences and emerging applications. However, the experimental realization of this property is challenging. Here, by using first-principles calculations and modal analysis, we predict a mechanism of producing VQAHE in two-dimensional ferromagnetic van der Waals germanene/MnI_(2) heterostructure. This heterostructure exhibits both valley anomalous Hall effect and VQAHE due to the joint effects of magnetic exchange effect and spin–orbital coupling with the aid of anomalous Hall conductance and chiral edge state. Moreover interestingly, through the electrical modulation of ferroelectric polarization state in In_(2)Se_(3), the germanene/Mn I_(2)/In_(2)Se_(3) heterostructure can undergo reversible switching from a semiconductor to a metallic behavior. This work offers a guiding advancement for searching for VQAHE in ferromagnetic van der Waals heterostructures and exploiting energy-efficient devices based on the VQAHE.

Enhanced anomalous Hall effect in kagome magnet YbMn_(6)Sn_(6)with intermediate-valence ytterbium

We report on the magnetization and anomalous Hall effect(AHE)in the high-quality single crystals of the kagome magnet YbMn_(6)Sn_(6),where the spins of the Mn atoms in the kagome lattice order ferromagnetically and the intermediate-valence Yb atoms are nonmagnetic.The intrinsic mechanism plays a crucial role in the AHE,leading to an enhanced anomalous Hall conductivity(AHC)compared with the other rare-earth RMn_(6)Sn_(6)compounds.Our band structure calculation reveals a strong hybridization between the 4f electrons of Yb and conduction electrons.

Evolution of anomalous Hall effect in ferromagnetic Weyl semimetal Nb_(x)Zr_(1-x)Co_(2)Sn

Magnetic topological semimetal can host various topological non-trivial states leading to exotic novel transport properties.Here we report the systematic magneto-transport studies on the Heusler alloy Nb_(x)Zr_(1-x)Co_(2)Sn considered as a ferromagnetic(FM)Weyl semimetal.The cusp anomaly of temperature-dependent resistivity and large isotropic negative magneto-resistivity(MR)emerge around the FM transition consistent with the theoretical half-metallic predictions.The prominent anomalous Hall effect(AHE)has the same behavior with the applied field along various crystal directions.The Nb doping introduces more disorder resulting in the enhancement of the upturn for the temperature-dependent resistivity in low temperatures.With Nb doping,the AHE exhibits systemic evolution with the Fermi level lifted.At the doping level of x=0.25,the AHE mainly originates from the intrinsic contribution related to non-trivial topological Weyl states.

Tailoring-compensated ferrimagnetic state and anomalous Hall effect in quaternary Mn–Ru–V–Ga Heusler compounds

Cubic Mn_(2)Ru_(x)Ga Heusler compound is a typical example of compensated ferrimagnet with attractive potential for high-density,ultrafast,and low-power spintronic applications.In the form of epitaxial thin films,Mn_(2)Ru_(x)Ga exhibits high spin polarization and high tunability of compensation temperature by freely changing the Ru content x in a broad range(0.3<x<1.0).Herein Mn-Ru-Ga-based polycrystalline bulk buttons prepared by arc melting are systematically studied and it is found that in equilibrium bulk form,the cubic structure is unstable when x<0.75.To overcome this limitation,Mn-Ru-Ga is alloyed with a fourth element V.By adjusting the content of V in the By adjusting the content of V in the Mn_(2)Ru_(0.75)V_(y)Ga and Mn_(2.25-y)Ru_(0.75)V_(y)Ga quaternary systems the magnetic compensation temperature is tuned.Compensation is achieved near 300 K which is confirmed by both the magnetic measurement and anomalous Hall effect measurement.The analyses of the anomalous Hall effect scaling in quaternary Mn-Ru-V-Ga alloy reveal the dominant role of skew scattering,notably that contributed caused by the thermally excited phonons,in contrast to the dominant intrinsic mechanism found in many other 3d ferromagnets and Heusler compounds.It is further shown that the Ga antisites and V content can simultaneously control the residual resistivity ratio(RRR)as well as the relative contribution of phonon and defect to the anomalous Hall effect a"/a0'in Mn-Ru-V-Ga,resulting in a scaling relation a"/a0'∝RRR^(1.8).

Spin direction dependent quantum anomalous Hall effect in two-dimensional ferromagnetic materials

We propose a scheme for realizing the spin direction-dependent quantum anomalous Hall effect(QAHE)driven by spin-orbit couplings(SOC)in two-dimensional(2D)materials.Based on the sp^(3)tight-binding(TB)model,we find that these systems can exhibit a QAHE with out-of-plane and in-plane magnetization for the weak and strong SOC,respectively,in which the mechanism of quantum transition is mainly driven by the band inversion of p_(x,y)/p_(z)orbitals.As a concrete example,based on first-principles calculations,we realize a real material of monolayer 1T-SnN_(2)/PbN_(2)exhibiting the QAHE with in-plane/out-of-plane magnetization characterized by the nonzero Chern number C and topological edge states.These findings provide useful guidance for the pursuit of a spin direction-dependent QAHE and hence stimulate immediate experimental interest.

From magnetically doped topological insulator to the quantum anomalous Hall effect

Quantum Hall effect （QHE）, as a class of quantum phenomena that occur in macroscopic scale, is one of the most important topics in condensed matter physics. It has long been expected that QHE may occur without Landau levels so that neither external magnetic field nor high sample mobility is required for its study and application, Such a QHE free of Landau levels, can appear in topological insulators （TIs） with ferromagnetism as the quantized version of the anomalous Hall effect, i.e., quantum anomalous Hall （QAH） effect. Here we review our recent work on experimental realization of the QAH effect in magnetically doped TIs. With molecular beam epitaxy, we prepare thin films of Cr-doped （Bi,Sb）2Te3 TIs with well- controlled chemical potential and long-range ferromagnetic order that can survive the insulating phase. In such thin films, we eventually observed the quantization of the Hall resistance at h/e2 at zero field, accompanied by a considerable drop in the longitudinal resistance. Under a strong magnetic field, the longitudinal resistance vanishes, whereas the Hall resistance remains at the quantized value. The realization of the QAH effect provides a foundation for many other novel quantum phenomena predicted in TIs, and opens a route to practical applications of quantum Hall physics in low-power-consumption electronics.

Thermal Hall effect and the Wiedemann–Franz law in Chern insulator

Thermal Hall effect, where a transverse temperature difference is generated by implementing a longitudinal temperature gradient and an external magnetic field in the perpendicular direction to systems, is a useful tool to reveal transport properties of quantum materials. A systematic study of the thermal Hall effect in a Chern insulator is still lacking. Here,using the Landauer–Büttiker formula, we investigated the thermal Hall transport of the Harper–Hofstadter model with flux φ= 1/2 and its generalizations. We demonstrated that the Wiedemann–Franz law, which states that the thermal Hall conductivity is linearly proportional to the quantum Hall conductivity in the low temperature limit, is still valid in this Chern insulator, and that the thermal Hall conductivity can be used to characterize the topological properties of quantum materials.

Inverse Spin Hall Effect in Two-Terminal Device with Rashba Spin-Orbit Coupling

We report a theoretic study on the inverse spin-Hall effect （ISHE） in a two-terminal nano-device that consists of a two-dimensional electron gas （2DEG） with Rashba spin-orbit coupling （RSOC） and two ideal leads. Based on a two-site toy model and Keldysh Green＇s function method, we derive an analytic result of ISHE, which shows clearly that a nonzero transverse charge current stems from the combined effect of the RSOC, the spin bias, and its spin polarization direction in spin space. Our further numerical calculations in a larger system other than two-site lattice model demonstrate that the transverse charge current, dependent on the strength of the RSOC, the Fermi energy of the system, as well as the system size, can exhibit oscillating behavior and even reverse its sign due to Rashba spin precession. These properties may be helpful for eficient detection of the spin current （spin bias） by measuring the transverse charge current in a spin-orbital coupling system.

Integer quantum Hall effect in Kekulé-patterned graphene

Y-shaped Kekulébond textures in a honeycomb lattice on a graphene-copper superlattice have recently been experimentally revealed.In this paper,the effects of such a bond modulation on the transport coefficients of Kekulé-patterned graphene are investigated in the presence of a perpendicular magnetic field.Analytical expressions are derived for the Hall and longitudinal conductivities using the Kubo formula.It is found that the Y-shaped Kekulébond texture lifts the valley degeneracy of all Landau levels except that of the zero mode,leading to additional plateaus in the Hall conductivity accompanied by a split of the corresponding peaks in the longitudinal conductivity.Consequently,the Hall conductivity is quantized as±ne^(2)/h for n=2,4,6,8,10,...,excluding some plateaus that disappear due to the complete overlap of the Landau levels of different cones.These results also suggest that DC Hall conductivity measurements will allow us to determine the Kekulébond texture amplitude.

KINETIC FUNCTIONS IN MAGNETOHYDRODYNAMICS WITH RESISTIVITY AND HALL EFFECT

We consider a nonlinear hyperbolic system of two conservation laws which arises in ideal magnetohydrodynamics and includes second-order terms accounting for magnetic resistivity and Hall effect. We show that the initial value problem for this model may lead to solutions exhibiting complex wave structures, including undercompressive nonclassical shock waves. We investigate numerically the subtle competition that takes place between the hyperbolic, diffusive, and dispersive parts of the system. Following Abeyratne, Knowles, LeFloch, and Truskinovsky, who studied similar questions arising in fluid and solid flows, we determine the associated kinetic function which characterizes the dynamics of undereompressive shocks driven by resistivity and Hall effect. To this end, we design a new class of ＂schemes with eontroled dissipation＂, following recent work by LeFloch and Mohammadian. It is now recognized that the equivalent equation associated with a scheme provides a guideline to design schemes that capture physically relevant, nonclassical shocks. We propose a new class of schemes based on high-order entropy conservative, finite differences for the hyperbolic flux, and high-order central differences for the resistivity and Hall terms. These schemes are tested for several regimes of （co-planar or not） initial data and parameter values, and allow us to analyze the properties of nonclassical shocks and establish the existence of monotone kinetic functions in magnetohydrodynamics.

Room-temperature anomalous Hall effect and magnetroresistance in(Ga,Co)-codoped ZnO diluted magnetic semiconductor films

This paper reports that the （Ga, Co）-codoped ZnO thin films have been grown by inductively coupled plasma enhanced physical vapour deposition. Room-temperature ferromagnetism is observed for the as-grown thin films. The x-ray absorption fine structure characterization reveals that Co2＋ and Ga3＋ ions substitute for Zn2＋ ions in the ZnO lattice and exclude the possibility of extrinsic ferromagnetism origin. The ferromagnetic （Ga, Co）-codoped ZnO thin films exhibit carrier concentration dependent anomalous Hall effect and positive magnetoresistance at room tempera- ture. The mechanism of anomalous Hall effect and magneto-transport in ferromagnetic ZnO-based diluted magnetic semiconductors is discussed.

A Simulation Study of Hall Effect on Double Tearing Modes

A Hall magnetohydrodynamics （MHD） simulation is carried out to study the dynamic process of double tearing mode. The results indicated that the growth rates in the earlier nonlinear and transition phases agree with the previous results. With further development of reconnection, the current sheet thickness is much smaller than the ion inertia length, which leads to a strong influence of the Hall effects. As a result, the reconnection in the late nonlinear phase exhibits an explosive nature with a time scale nearly independent of resistivity. A localized and severely intensified current density is observed and the maximum kinetic energy is over one order of magnitude higher in Hall MHD than that in resistive MHD.

Particle-in-cell simulation for effect of anode temperature on discharge characteristics of a Hall effect thruster

Propellant gas flow has an important impact on the ionization and acceleration process of Hall effect thrusters （HETs）. In this paper, a particle-in-cell numerical method is used to study the effect of the anode temperature, i.e., the flow speed of the propellant gas, on the discharge characteristics of a HET. The simulation results show that, no matter the magnitude of the discharge voltage, the calculated variation trends of performance parameters with the anode temperature are in good agreement with the experimental ones presented in the literature. Further mechanism analysis indicates that the magnitude of the electron temperature is responsible for the two opposing variation laws found under different discharge voltages. When the discharge voltage is low, the electron temperature is low, and so is the intensity of the propellant ionization; the variation of the thruster performance with the anode temperature is thereby determined by the variation of the neutral density that affects the propellant utilization efficiency. When the discharge voltage is high, the electron temperature is large enough to guarantee a high degree of the propellant utilization no matter the magnitude of the anode temperature. The change of the thruster performance with the anode temperature is thus dominated by the change of the electron temperature and consequently the electron-neutral collisions as well as the electron cross-field mobility that affect the current utilization efficiency.

Ferromagnetism,variable range hopping,and the anomalous Hall effect in epitaxial Co:ZnO thin film

A series of high quality single crystalline epitaxial Zn 0.95 Co 0.05 O thin films is prepared by molecular beam epitaxy.Superparamagnetism and ferromagnetism are observed when the donor density is manipulated in a range of 10 18 cm 3-10 20 cm 3 by changing the oxygen partial pressure during film growth.The conduction shows variable range hopping at low temperature and thermal activation conduction at high temperature.The ferromagnetism can be maintained up to room temperature.However,the anomalous Hall effect is observed only at low temperature and disappears above 160 K.This phenomenon can be attributed to the local ferromagnetism and the decreased optimal hopping distance at high temperatures.

Characteristics of anomalous Hall effect in spin-polarized two-dimensional electron gases in the presence of both intrinsic,extrinsic,and external electric-field induced spin-orbit couplings

The various competing contributions to the anomalous Hall effect in spin-polarized two-dimensional electron gases in the presence of both intrinsic, extrinsic and external electric-field induced spin-orbit coupling were investigated theoretically. Based on a unified semiclassical theoretical approach, it is shown that the total anomalous Hall conductivity can be expressed as the sum of three distinct contributions in the presence of these competing spin-orbit interactions, namely an intrinsic contribution determined by the Berry curvature in the momentum space, an extrinsic contribution determined by the modified Bloch band group velocity and an extrinsic contribution determined by spin-orbit-dependent impurity scattering. The characteristics of these competing contributions are discussed in detail in the paper.

Nonlinear Hall Effect in Antiferromagnetic Half-Heusler Materials

It has recently been demonstrated that various topological states, including Dirac, Weyl, nodal-line, and triplepoint semimetal phases, can emerge in antiferromagnetic(AFM) half-Heusler compounds. However, how to determine the AFM structure and to distinguish different topological phases from transport behaviors remains unknown. We show that, due to the presence of combined time-reversal and fractional translation symmetry, the recently proposed second-order nonlinear Hall effect can be used to characterize different topological phases with various AFM configurations. Guided by the symmetry analysis, we obtain expressions of the Berry curvature dipole for different AFM configurations. Based on the effective model, we explicitly calculate the Berry curvature dipole, which is found to be vanishingly small for the triple-point semimetal phase, and large in the Weyl semimetal phase. Our results not only put forward an effective method for the identification of magnetic orders and topological phases in AFM half-Heusler materials, but also suggest these materials as a versatile platform for engineering the nonlinear Hall effect.