Theoretical Analysis of Triple Liquid Stub Tuner Impedance Matching for ICRH on Tokamaks

The impedance matching is crucial for continuous wave operation of ion cyclotron resonance heating（ICRH） antennae with high power injection into plasmas.A sudden increase in the reflected radio frequency power due to an impedance mismatch of the ICRH system is an issue which must be solved for present-day and future fusion reactors.This paper presents a method for theoretical analysis of ICRH system impedance matching for a triple liquid stub tuner under plasma operational conditions.The relationship of the antenna input impedance with the plasma parameters and operating frequency is first obtained using a global solution.Then,the relations of the plasma parameters and operating frequency with the matching liquid heights are indirectly obtained through numerical simulation according to transmission line theory and matching conditions.The method provides an alternative theoretical method,rather than measurements,to study triple liquid stub tuner impedance matching for ICRH,which may be beneficial for the design of ICRH systems on tokamaks.

Numerical modeling of thermal loading of diamond crystal in X-ray FEL oscillators

Due to high reflectivity and high resolution of X-ray pulses, diamond is one of the most popular Bragg crystals serving as the reflecting mirror and mono-chromator in the next generation of free electron lasers（FELs）.The energy deposition of X-rays will result in thermal heating, and thus lattice expansion of the diamond crystal,which may degrade the performance of X-ray FELs. In this paper, the thermal loading effect of diamond crystal for X-ray FEL oscillators has been systematically studied by combined simulation with Geant4 and ANSYS, and its dependence on the environmental temperature, crystal size, X-ray pulse repetition rate and pulse energy are presented. Our results show that taking the thermal loading effects into account, X-ray FEL oscillators are still robust and promising with an optimized design.

Effect of sample temperature on laser-induced semiconductor plasma spectroscopy

We investigate the temperature dependence of the emission spectrum of a laser-induced semiconductor（Ge and Si） plasma. The change in spectral intensity with the sample temperature indicates the change of the laser ablation mass. The reflectivity of the target surface is reduced as the sample is heated, which leads to an increase in the laser energy coupled to the surface of the sample and eventually produces a higher spectral intensity.The spectral intensities are enhanced by a few times at high temperatures compared with the cases at low temperatures. The spectral intensity of Ge is enhanced by 1.5 times at 422.66 nm, and 3 times at589.33 nm when the sample temperature increases from 50°C to 300°C. We can obtain the same emission intensity by a more powerful laser or by less pulse energy with a higher sample temperature. Based on experimental observations we conclude that the preheated sample can improve the emission intensity of laser-induced semiconductor plasma spectroscopy.