Flexible and electrically robust graphene-based nanocomposite paper with hierarchical microstructures for multifunctional wearable devices

Multifunctional and flexible wearable devices play a crucial role in a wide range of applications,such as heath monitoring,intelligent skins,and human-machine interactions.Developing flexible and conductive materials for multifunctional wearable devices with low-cost and high efficiency methods are highly desirable.Here,a conductive graphene/microsphere/bamboo fiber(GMB)nanocomposite paper with hierarchical surface microstructures is successfully fabricated through a simple vacuum-assisted filtration followed by thermo-foaming process.The as-prepared microstructured GMB nanocomposite paper exhibits not only a high volume electrical conductivity of~45 S/m but also an excellent electrical stability(i.e.,relative changes in resistance are less than 3%under stretching,folding,and compressing loadings)due to its unique structure features.With this microstructured nanocomposite paper as active sensing layer,microstructured pressure sensors with a high sensitivity(-4 kPa^(-1)),a wide sensing range(0–5 kPa),and a rapid response time(about 140 ms)are realized.In addition,benefitting from the outstanding electrical stability and mechanical flexibility,the microstructured nanocomposite paper is further demonstrated as a low-voltage Joule heating device.The surface temperature of the microstructured nanocomposite paper rapidly reaches over 80℃ when applying a relatively low voltage of 7 V,indicating its potential in human thermotherapy and thermal management.

Optimal Scheduling Method of Cogeneration System with Heat Storage Device Based on Memetic Algorithm

Electric-heat coupling characteristics of a cogeneration system and the operating mode of fixing electricity with heat are the main reasons for wind abandonment during the heating season in the Three North area.To improve the wind-power absorption capacity and operating economy of the system,the structure of the system is improved by adding a heat storage device and an electric boiler.First,aiming at the minimum operating cost of the system,the optimal scheduling model of the cogeneration system,including a heat storage device and electric boiler,is constructed.Second,according to the characteristics of the problem,a cultural gene algorithm program is compiled to simulate the calculation example.Finally,through the system improvement,the comparison between the conditions before and after and the simulation solutions of similar algorithms prove the effectiveness of the proposed scheme.The simulation results show that adding the heat storage device and electric boiler to the scheduling optimization process not only improves the wind power consumption capacity of the cogeneration system but also reduces the operating cost of the system by significantly reducing the coal consumption of the unit and improving the economy of the system operation.The cultural gene algorithm framework has both the global evolution process of the population and the local search for the characteristics of the problem,which has a better optimization effect on the solution.

A BLOCK-CENTERED UPWIND APPROXIMATION OF THE SEMICONDUCTOR DEVICE PROBLEM ON A DYNAMICALLY CHANGING MESH

The numerical simulation of a three-dimensional semiconductor device is a fundamental problem in information science. The mathematical model is defined by an initialboundary nonlinear system of four partial differential equations: an elliptic equation for electric potential, two convection-diffusion equations for electron concentration and hole concentration, and a heat conduction equation for temperature. The first equation is solved by the conservative block-centered method. The concentrations and temperature are computed by the block-centered upwind difference method on a changing mesh, where the block-centered method and upwind approximation are used to discretize the diffusion and convection, respectively. The computations on a changing mesh show very well the local special properties nearby the P-N junction. The upwind scheme is applied to approximate the convection, and numerical dispersion and nonphysical oscillation are avoided. The block-centered difference computes concentrations, temperature, and their adjoint vector functions simultaneously.The local conservation of mass, an important rule in the numerical simulation of a semiconductor device, is preserved during the computations. An optimal order convergence is obtained. Numerical examples are provided to show efficiency and application.

Mathematical Model,Numerical Simulation and Convergence Analysis of a Semiconductor Device Problem with Heat and Magnetic Influences

In this paper,the authors discuss a three-dimensional problem of the semiconductor device type involved its mathematical description,numerical simulation and theoretical analysis.Two important factors,heat and magnetic influences are involved.The mathematical model is formulated by four nonlinear partial differential equations(PDEs),determining four major physical variables.The influences of magnetic fields are supposed to be weak,and the strength is parallel to the z-axis.The elliptic equation is treated by a block-centered method,and the law of conservation is preserved.The computational accuracy is improved one order.Other equations are convection-dominated,thus are approximated by upwind block-centered differences.Upwind difference can eliminate numerical dispersion and nonphysical oscillation.The diffusion is approximated by the block-centered difference,while the convection term is treated by upwind approximation.Furthermore,the unknowns and adjoint functions are computed at the same time.These characters play important roles in numerical computations of conductor device problems.Using the theories of priori analysis such as energy estimates,the principle of duality and mathematical inductions,an optimal estimates result is obtained.Then a composite numerical method is shown for solving this problem.

Fast and uniform growth of graphene glass using confined-flow chemical vapor deposition and its unique applications

Fast and uniform growth of high-quality graphene on conventional glass is of great importance for practical applications of graphene glass. We report herein a confined-flow chemical vapor deposition （CVD） approach for the high- efficiency fabrication of graphene glass. The key feature of our approach is the fabrication of a 2-4 μm wide gap above the glass substrate, with plenty of stumbling blocks; this gap was found to significantly increase the collision probability of the carbon precursors and reactive fragments between one another and with the glass surface. As a result, the growth rate of graphene glass increased remarkably, together with an improvement in the growth quality and uniformity as compared to those in the conventional gas flow CVD technique. These high-quality graphene glasses exhibited an excellent defogging performance with much higher defogging speed and higher stability compared to those previously reported. The graphene sapphire glass was found to be an ideal substrate for growing uniform and ultra-smooth aluminum nitride thin films without the tedious pre-deposition of a buffer layer. The presented confined- flow CVD approach offers a simple and low-cost route for the mass production of graphene glass, which is believed to promote the practical applications of various graphene glasses.

Rapid growth of angle-confined large-domain graphene bicrystals

In the chemical vapor deposition growth of large-area graphene polycrystalline thin films, the coalescence of randomly oriented graphene domains results in a high density of uncertain grain boundaries （GBs）. The structures and properties of various GBs are highly dependent on the misorientation angles between the graphene domains, which can significantly affect the performance of the graphene films and impede their industrial applications. Graphene bicrystals with a specific type of GB can be synthesized via the controllable growth of graphene domains with a predefined lattice orientation. Although the bicrystal has been widely investigated for traditional bulk materials, no successful synthesis strategy has been presented for growing two-dimensional graphene bicrystals. In this stud34 we demonstrate a simple approach for growing well-aligned large-domain graphene bicrystals with a confined tilt angle of 30° on a facilely recrystallized single-crystal Cu （100） substrate. Control of the density of the GBs with a miso- rientation angle of 30° was realized via the controllable rapid growth of sub- centimeter graphene domains with the assistance of a cooperative catalytic surface-passivation treatment. The large-area production of graphene bicrystals consisting of the sole specific GBs with a tunable density provides a new material platform for fundamental studies and practical applications.