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The single-event effect evaluation technology for nano integrated circuits 被引量:1
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作者 郑宏超 赵元富 +4 位作者 岳素格 范隆 杜守刚 陈茂鑫 于春青 《Journal of Semiconductors》 EI CAS CSCD 2015年第11期75-79,共5页
Single-event effects of nano scale integrated circuits are investigated. Evaluation methods for singleevent transients, single-event upsets, and single-event functional interrupts in nano circuits are summarized and c... Single-event effects of nano scale integrated circuits are investigated. Evaluation methods for singleevent transients, single-event upsets, and single-event functional interrupts in nano circuits are summarized and classified in detail. The difficulties in SEE testing are discussed as well as the development direction of test technology, with emphasis placed on the experimental evaluation of a nano circuit under heavy ion, proton, and laser irradiation. The conclusions in this paper are based on many years of testing at accelerator facilities and our present understanding of the mechanisms for SEEs, which have been well verified experimentally. 展开更多
关键词 single-event effect heavy ion test radiation evaluation method
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