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A 9% efficiency of flexible Mo-foil-based Cu2ZnSn(S,Se)4 solar cells by improving CdS buffer layer and heterojunction interface 被引量:2
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作者 Quan-Zhen Sun Hong-Jie Jia +9 位作者 Shu-Ying Cheng Hui Deng Qiong Yan Bi-Wen Duan Cai-Xia Zhang Qiao Zheng Zhi-Yuan Yang Yan-Hong Luo Qing-Bo Men Shu-Juan Huang 《Chinese Physics B》 SCIE EI CAS CSCD 2020年第12期573-582,共10页
Flexible Cu2ZnSn(S,Se)4(CZTSSe)solar cells show great potential applications due to low-cost,nontoxicity,and stability.The device performances under an especial open circuit voltage(VOC)are limited by the defect recom... Flexible Cu2ZnSn(S,Se)4(CZTSSe)solar cells show great potential applications due to low-cost,nontoxicity,and stability.The device performances under an especial open circuit voltage(VOC)are limited by the defect recombination of CZTSSe/CdS heterojunction interface.We improve the deposition technique to obtain compact CdS layers without any pinholes for flexible CZTSSe solar cells on Mo foils.The efficiency of the device is improved from 5.7%to 6.86%by highquality junction interface.Furthermore,aiming at the S loss of CdS film,the S source concentration in deposition process is investigated to passivate the defects and improve the CdS film quality.The flexible Mo-foil-based CZTSSe solar cells are obtained to possess a 9.05%efficiency with a VOC of 0.44 V at an optimized S source concentration of 0.68 mol/L.Systematic physical measurements indicate that the S source control can effectively suppress the interface recombination and reduce the VOCdeficit.For the CZTSSe device bending characteristics,the device efficiency is almost constant after1000 bends,manifesting that the CZTSSe device has an excellent mechanical flexibility.The effective improvement strategy of CdS deposition is expected to provide a new perspective for promoting the conversion efficiency of CZTSSe solar cells. 展开更多
关键词 flexible solar cells CdS deposition heterojunction interface defect passivation
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Constructing heterojunction interface of Co_(3)O_(4)/TiO_(2) for efficiently accelerating acetaminophen degradation via photocatalytic activation of sulfite 被引量:1
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作者 Qiangwei Li Mengmeng Zhang +4 位作者 Yongyi Xu Xiaoqi Quan Yiao Xu Wen Liu Lidong Wang 《Chinese Chemical Letters》 SCIE CAS CSCD 2023年第3期200-205,共6页
Achieving efficient degradation of organic pollutants via activation of sulfite is meaningful but challenging.Herein,we have constructed a heterogeneous catalyst system involving Co_(3)O_(4) and TiO_(2) nanoparticles ... Achieving efficient degradation of organic pollutants via activation of sulfite is meaningful but challenging.Herein,we have constructed a heterogeneous catalyst system involving Co_(3)O_(4) and TiO_(2) nanoparticles to form the p-n heterojunction(Co_(3)O_(4)/TiO_(2)) to degrade acetaminophen(ACE) through photocatalytic activation of sulfite.Specifically,X-ray photoelectron spectroscopy analysis and theoretical calculations provide compelling evidence of electron transfer from Co_(3)O_(4) to TiO_(2) at the heterointerface.The interfacial electron redistribution of Co_(3)O_(4)/TiO_(2) tunes the adsorption energy of HSO_(3)^(-)/SO_(3)^(2-) in sulfite activation process for enhanced the catalytic activity.Owing to its unique heterointerface,the degradation efficiency of ACE reached 96.78%within 10 min.The predominant active radicals were identified as ·OH,h^(+),and SO_(x)^(·-) through radical quenching experiments and electron spin resonance capture.Besides,the possible degradation pathway was deduced by monitoring the generated intermediate products.Thereafter,the enhanced roles of well-engineered compositing interface in photocatalytic activation of sulfite for complete degradation of ACE were unveiled that it can improve light absorption ability,facilitate the generation of active species,and optimize reactive pathways.Considering that sulfite is a waste from flue gas desulfurization process,the photocatalytic activation of sulfite system will open up new avenues of beneficial use of air pollutants for the removal of pharmaceutical wastewater. 展开更多
关键词 SULFITE Photocatalytic activation Charge transfer heterojunction interface Degradation mechanism
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Spontaneous decoration of ionic compounds at perovskite interfaces to achieve 23.38% efficiency with 85% fill factor in NiO_X-based perovskite solar cells
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作者 Geping Qu Deng Wang +11 位作者 Xiaoyuan Liu Ying Qiao Danish Khan Yinxin Li Jie Zeng Pengfei Xie Yintai Xu Peide Zhu Limin Huang Yang-Gang Wang Baomin Xu Zong-Xiang Xu 《Journal of Energy Chemistry》 SCIE EI CAS CSCD 2023年第10期39-48,I0003,共11页
Inorganic hole transport materials, particularly NiO_X, have shown considerable promise in boosting the efficiency and stability of perovskite solar cells. However, a major barrier to commercialization of NiO_X-based ... Inorganic hole transport materials, particularly NiO_X, have shown considerable promise in boosting the efficiency and stability of perovskite solar cells. However, a major barrier to commercialization of NiO_X-based perovskite solar cells with positive-intrinsic-negative architectures is their direct contact with the absorbing layer, which can lead to losses of photovoltage and fill factor. Furthermore, highly positive under-coordinated Ni cations degrade the perovskite at the interface. Here, we address these issues with the use of an ionic compound(QAPyBF_(4)) as an additive to passivate defects throughout the perovskite layer and improve carrier conduction and interactions with under-coordinated Ni cations. Specifically,the highly electronegative inorganic anion [BF_(4)]~- interacts with the NiO_x/perovskite interface to passivate under-coordinated cations(Ni^(≥3+)). Accordingly, the decorated cells achieved a power conversion efficiency of 23.38% and a fill factor of 85.5% without a complex surface treatment or NiO_X doping. 展开更多
关键词 Perovskite solar cell Defect passivation Nickel oxide heterojunction interface π-Conjugated ionic compound
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Nano-buffer controlled electron tunneling to regulate heterojunctional interface emission 被引量:2
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作者 Wei Liu Zhuxin Li +3 位作者 Zengliang Shi Ru Wang Yizhi Zhu Chunxiang Xu 《Opto-Electronic Advances》 SCIE 2021年第9期39-47,共9页
Interface emission from heterojunction is a shortcoming for electroluminescent devices.A buffer layer introduced in the heterojunctional interfaces is a potential solution for the challenge.However,the dynamics for ca... Interface emission from heterojunction is a shortcoming for electroluminescent devices.A buffer layer introduced in the heterojunctional interfaces is a potential solution for the challenge.However,the dynamics for carrier tunneling to control the interface emission is still a mystery.Herein,the low-refractive HfO_(2)with a proper energy band configuration is em-ployed as the buffer layer in achieving ZnO-microwire/HfO_(2)/GaN heterojunctional light-emitting diodes(LEDs).The optic-ally pumped lasing threshold and lifetime of the ZnO microwire are reduced with the introduced HfO_(2)layer.As a result,the interface emission is of blue-shift from visible wavelengths to 394 nm whereas the ultraviolet(UV)emission is en-hanced.To regulate the interface recombination between electrons in the conduction band of ZnO and holes in the valence band of GaN,the tunneling electrons with higher conduction band are employed to produce a higher tunneling current through regulation of thin HfO_(2)film causing blue shift and interface emission enhancement.Our results provide a method to control the tunneling electrons in heterojunction for high-performance LEDs. 展开更多
关键词 tunneling electron light-emitting diode heterojunctional interface nano HfO_(2)buffer
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Point-to-face contact heterojunctions:Interfacial design of 0D nanomaterials on 2D g-C_(3)N_(4)towards photocatalytic energy applications 被引量:7
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作者 Xin-Quan Tan Sue-Faye Ng +1 位作者 Abdul Rahman Mohamed Wee-Jun Ong 《Carbon Energy》 SCIE CAS 2022年第5期665-730,共66页
Green energy generation is an indispensable task to concurrently resolve fossil fuel depletion and environmental issues to align with the global goals of achieving carbon neutrality.Photocatalysis,a process that trans... Green energy generation is an indispensable task to concurrently resolve fossil fuel depletion and environmental issues to align with the global goals of achieving carbon neutrality.Photocatalysis,a process that transforms solar energy into clean fuels through a photocatalyst,represents a felicitous direction toward sustainability.Eco-rich metal-free graphitic carbon nitride(g-C_(3)N_(4))is profiled as an attractive photocatalyst due to its fascinating properties,including excellent chemical and thermal stability,moderate band gap,visible light-active nature,and ease of fabrication.Nonetheless,the shortcomings of g-C_(3)N_(4)include fast charge recombination and limited surface-active sites,which adversely affect photocatalytic reactions.Among the modification strategies,point-to-face contact engineering of 2D g-C_(3)N_(4)with 0D nanomaterials represents an innovative and promising synergy owing to several intriguing attributes such as the high specific surface area,short effective charge-transfer pathways,and quantum confinement effects.This review introduces recent advances achieved in experimental and computational studies on the interfacial design of 0D nanostructures on 2D g-C_(3)N_(4)in the construction of point-to-face heterojunction interfaces.Notably,0D materials such as metals,metal oxides,metal sulfides,metal selenides,metal phosphides,and nonmetals on g-C_(3)N_(4)with different charge-transfer mechanisms are systematically discussed along with controllable synthesis strategies.The applications of 0D/2D g-C_(3)N_(4)-based photocatalysts are focused on solar-to-energy conversion via the hydrogen evolution reaction,the CO_(2)reduction reaction,and the N2 reduction reaction to evaluate the photocatalyst activity and elucidate reaction pathways.Finally,future perspectives for developing high-efficiency 0D/2D photocatalysts are proposed to explore potential emerging carbon nitride allotropes,large-scale production,machine learning integration,and multidisciplinary advances for technological breakthroughs. 展开更多
关键词 0D/2D heterojunction charge-transfer mechanisms g-C_(3)N_(4)nanosheets heterojunction interface photocatalysis solar-to-energy conversion
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Micro-mechanism study of the effect of Cd-free buffer layers ZnxO(x = Mg/Sn) on the performance of flexible Cu2ZnSn(S, Se)4 solar cell
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作者 张彩霞 李雅玲 +6 位作者 林蓓蓓 唐建龙 孙全震 谢暐昊 邓辉 郑巧 程树英 《Chinese Physics B》 SCIE EI CAS CSCD 2023年第2期555-566,共12页
The traditional CdS buffer layers in flexible CZTSSe solar cells lead to light absorption losses and environmental pollution problems. Therefore, the study of Cd-free buffer layer is very important for the realization... The traditional CdS buffer layers in flexible CZTSSe solar cells lead to light absorption losses and environmental pollution problems. Therefore, the study of Cd-free buffer layer is very important for the realization of environmentally friendly and efficient CZTSSe solar cells. The Zn1-xMgxO(ZnMgO) and Zn1-xSnxO(ZnSnO) alternate buffer layers are studied in this study using the simulation package solar cell capacitance simulator(SCAPS-1D) numerical simulation model, and the theoretical analysis is further verified by the results of the experiments. We simulate the performance of CZTSSe/ZnXO(X = Mg/Sn) heterojunction devices with different Mg/(Zn+Mg) and Sn/(Zn+Sn) ratios and analyze the intrinsic mechanism of the effect of conduction band offsets(CBO) on the device performance. The simulation results show that the CZTSSe/ZnXO(X = Mg/Sn) devices achieve optimal performance with a small “spike” band or “flat” band at Mg and Sn doping concentrations of 0.1 and 0.2, respectively. To investigate the potential of Zn_(0.9)Mg_(0.1O) and Zn_(0.8)Sn_(0.2)O as alternative buffer layers, carrier concentrations and thicknesses are analyzed. The simulation demonstrates that the Zn0.9Mg0.1O device with low carrier concentration has a high resistivity, serious carrier recombination, and a greater impact on performance from thickness variation. Numerical simulations and experimental results show the potential of the ZnSnO buffer layer as an alternative to toxic CdS, and the ZnMgO layer has the limitation as a substitute buffer layer. This paper provides the theoretical basis and experimental proof for further searching for a suitable flexible CZTSSe Cd-free buffer layer. 展开更多
关键词 ZnMgO/ZnSnO numerical simulation Cd-free buffer heterojunction interface
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Engineering Cu_(2)O/Cu/N-C interface to induce directional migration of charge for driving photocatalytic homo-coupling of terminal alkynes
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作者 Xiaoqin Yan Tianyi Xu +8 位作者 Wenwen Zhan Yang Yang Yang Yu Jianjian Yi Xiaoxiao He Lei Yang Jianwei Zhao Liming Sun Xiguang Han 《Nano Research》 SCIE EI CSCD 2024年第8期6895-6902,共8页
The efficient utilization of visible light catalysts for organic reactions necessitates not only the effective separation of photogenerated electrons and holes to participate in the reaction,but also their ability to ... The efficient utilization of visible light catalysts for organic reactions necessitates not only the effective separation of photogenerated electrons and holes to participate in the reaction,but also their ability to form key intermediates with reactant molecules.The present study successfully synthesized a crusiform-like mesoporous structure of nitrogen-doped carbon-coated Cu_(2)O/Cu(Cu_(2)O/Cu/N-C)with a Cu_(2)O/dual electron acceptor interface using etched HKUST-1 as the precursor.A series of theoretical and experimental studies have demonstrated that the Cu_(2)O/Cu/N-C interface in the photocatalytic homo-coupling of terminal alkynes not only effectively enhances the separation of photogenerated electron−hole pairs,but also facilitates the formation of the key intermediate[Cu_(2)O/Cu/N-C]-phenylacetylide and promotes the rearrangement of its internal charges.As a result,the homo-coupling reaction can be effectively facilitated.The primary reason for the functional role of Cu_(2)O/Cu/N-C interface lies in the downward bending of energy band from Cu_(2)O to N-doped C layers,induced by the different work functions of Cu_(2)O,Cu and N-doped C layers.Consequently,Cu_(2)O/Cu/N-C photocatalysts demonstrate exceptional photocatalytic activity in the homo-coupling reaction of terminal alkynes under blue-light irradiation and air atmosphere.The present study presents a novel research methodology for the development of highly efficient visible light catalysts to facilitate organic reactions in future applications. 展开更多
关键词 photocatalysis homo-coupling of terminal alkynes directional migration of charges heterojunction interface Cu_(2)O carbon coated
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N self-doped multifunctional chitosan biochar-based microsphere with heterogeneous interfaces for self-powered supercapacitors to drive overall water splitting
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作者 Chunxia Yan Yaqi Yang +2 位作者 Jie Wei Jianhua Hou Ziqiang Shao 《Biochar》 SCIE CAS CSCD 2023年第1期1542-1558,共17页
Due to the rising need for clean and renewable energy,green materials including biochar are becoming increasingly popular in the field of energy storage and conversion.However,the lack of highly active and stable elec... Due to the rising need for clean and renewable energy,green materials including biochar are becoming increasingly popular in the field of energy storage and conversion.However,the lack of highly active and stable electrode materials hinders the development of stable energy supplies and efficient hydrogen production devices.Herein,we fabricated stable,conductive,and multifunctional chitosan microspheres by a facile emulsion crosslinking solution growth and hydrothermal sulphuration methods as multifunctional electrodes for overall water splitting driven by supercapacitors.This material possessed three-dimensional layered conductors with favorable heterojunction interface,ample hollow and porous structures.It presented remarkably enhanced electrochemical and catalytic activity for both supercapacitors and overall water electrolysis.The asymmetric supercapacitors based on chitosan biochar microsphere achieved high specific capacitance(260.9 F g^(−1) at 1 A g^(−1))and high energy density(81.5W h kg^(−1))at a power density of 978.4 W kg^(−1).The chitosan biochar microsphere as an electrode for electrolyze only required a low cell voltage of 1.49 V to reach a current density of 10 mA cm^(−2),and achieved excellent stability with 30 h continuous test at 20 mA cm^(−2).Then,we assembled a coupled energy storage device and hydrogen production system,the SCs as a backup power source availably guaranteed the continuous operation of overall water electrolysis.Our study provides valuable perspectives into the practical design of both integrated biochar-based electrode materials and coupled energy storage devices with energy conversion and storage in practical. 展开更多
关键词 Chitosan microsphere BIOCHAR heterojunction interface Multifunctional electrode Coupled energy storage device
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Boosting K-ion kinetics by interfacial polarization induced by amorphous MoO_(3-x)for MoSe_(2)/MoO_(3-x)@rGO composites 被引量:1
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作者 Jiangshao Yang Liwen Liu +5 位作者 Daoyi Wang Jianming Tao Yanming Yang Jiaxin Li Yingbin Lin Zhigao Huang 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2022年第20期232-240,共9页
Promoting interfacial reaction kinetics is highly desirable for achieving high-performances of anode material in alkali-ion batteries.Herein,flower-like MoSe_(2)/MoO_(3-x)@r GO composites are fabricated by a facile so... Promoting interfacial reaction kinetics is highly desirable for achieving high-performances of anode material in alkali-ion batteries.Herein,flower-like MoSe_(2)/MoO_(3-x)@r GO composites are fabricated by a facile solvothermal method involving a thermal-treatment at 800°C.When evaluated as an anode material for potassium ion batteries,MoSe_(2)/MoO_(3-x)@r GO delivers 248.2 m A h g^(-1)after 50 cycles at 0.2 A g^(-1) with a capacity retention of 84.6%and 182.9 m A h g^(-1)after 150 cycles at 1.0 A g^(-1) with a capacity retention of almost 61.2%,superior to those of bare MoSe_(2)or MoSe_(2)@r GO composites.Analysis from electrochemical measurements,the amorphous MoO_(3-x)containing oxygen vacancies could not only effectively buffer the self-aggregation of MoSe_(2)nanosheets but also provides lots of accessible active sites for potassium ion storage.Additionally,the open channels in the amorphous MoO_(3-x) phase lead to easier ion hopping and smaller diffusion barriers.Furthermore,the built-in electric field at the interface would be beneficial for electron transfer and K-ion migration across the hetero-junction interface.Moreover,larger dielectric polarization induced by the high relative permittivity of amorphous MoO_(3-x) would reduce charge transfer resistance and enhance K-ion migration across electric double-layer.Our work provides new insight into the enhanced performance of anode material coated by an amorphous layer with large relative permittivity. 展开更多
关键词 Potassium ion batteries MoSe_(2) AMORPHOUS Work function heterojunction interface
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Fabrication and characteristics of magnetic field sensors based on nano-polysilicon thin-film transistors
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作者 赵晓锋 温殿忠 +2 位作者 庄萃萃 曹靖雅 王志强 《Journal of Semiconductors》 EI CAS CSCD 2013年第3期127-132,共6页
A magnetic field sensor based on nano-polysilicon thin films transistors(TFTs) with Hall probes is proposed.The magnetic field sensors are fabricated on <100> orientation high resistivity(ρ>500Ω·cm) si... A magnetic field sensor based on nano-polysilicon thin films transistors(TFTs) with Hall probes is proposed.The magnetic field sensors are fabricated on <100> orientation high resistivity(ρ>500Ω·cm) silicon substrates by using CMOS technology,which adopt nano-polysilicon thin films with thicknesses of 90 nm and heterojunction interfaces between the nano-polysilicon thin films and the high resistivity silicon substrates as the sensing layers.The experimental results show that when V_(DS) = 5.0 V,the magnetic sensitivities of magnetic field sensors based on nano-polysilicon TFTs with length-width ratios of 160μm/80μm,320μm/80μm and 480μm/80μm are 78 mV/T,55 mV/T and 34 mV/T,respectively.Under the same conditions,the magnetic sensitivity of the obtained magnetic field sensor is significantly improved in comparison with a Hall magnetic field sensor adopting silicon as the sensing layers. 展开更多
关键词 nano-polysilicon TFT magnetic field sensor CMOS technology magnetic sensitivity heterojunction interfaces
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