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Ab initio Calculation of Valence-band Offsets for Lattice-matched Heterojunctions
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作者 王仁智 黄美纯 柯三黄 《Science China Mathematics》 SCIE 1993年第3期319-325,共7页
In the light of our previous result that the average bond energy E_h valuelines up across heterojunction interfaces,in this paper,the valence-band offsets in ten hete-rojunctions have been calculated using the E_h as ... In the light of our previous result that the average bond energy E_h valuelines up across heterojunction interfaces,in this paper,the valence-band offsets in ten hete-rojunctions have been calculated using the E_h as a reference level with the LMTO-ASAband-structure method.The calculated results are in excellent agreement with those fromthe more elaborate first-principles self-consistent interface calculations.As the presentmethod requires by far the smaller computational effort,it is very convenient for usingon medium-sized computers. 展开更多
关键词 semiconductor heterojunetion VALENCE-BAND OFFSETS ab INITIO calculation
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