Two-dimensional layered material/semiconductor heterostructures have emerged as a category of fascinating architectures for developing highly efficient and low-cost photodetection devices.Herein,we present the constru...Two-dimensional layered material/semiconductor heterostructures have emerged as a category of fascinating architectures for developing highly efficient and low-cost photodetection devices.Herein,we present the construction of a highly efficient flexible light detector operating in the visible-near infrared wavelength regime by integrating a PdTe2 multilayer on a thin Si film.A representative device achieves a good photoresponse performance at zero bias including a sizeable current on/off ratio exceeding 105,a decent responsivity of~343 mA/W,a respectable specific detectivity of~2.56×10^(12)Jones,and a rapid response time of 4.5/379μs,under 730 nm light irradiation.The detector also displays an outstanding long-term air stability and operational durability.In addition,thanks to the excellent flexibility,the device can retain its prominent photodetection performance at various bending radii of curvature and upon hundreds of bending tests.Furthermore,the large responsivity and rapid response speed endow the photodetector with the ability to accurately probe heart rate,suggesting a possible application in the area of flexible and wearable health monitoring.展开更多
Atomic layer deposition(ALD) is a versatile technique to deposit metals and metal oxide sensing materials at the atomic scale to achieve improved sensor functions. This article reviews metals and metal oxide semicondu...Atomic layer deposition(ALD) is a versatile technique to deposit metals and metal oxide sensing materials at the atomic scale to achieve improved sensor functions. This article reviews metals and metal oxide semiconductor(MOS) heterostructures for gas sensing applications in which at least one of the preparation steps is carried out by ALD. In particular, three types of MOS-based heterostructures synthesized by ALD are discussed, including ALD of metal catalysts on MOS, ALD of metal oxides on MOS and MOS core–shell(C–S) heterostructures.The gas sensing performances of these heterostructures are carefully analyzed and discussed.Finally, the further developments required and the challenges faced by ALD for the synthesis of MOS gas sensing materials are discussed.展开更多
As Moore’s law deteriorates,the research and development of new materials system are crucial for transitioning into the post Moore era.Traditional semiconductor materials,such as silicon,have served as the cornerston...As Moore’s law deteriorates,the research and development of new materials system are crucial for transitioning into the post Moore era.Traditional semiconductor materials,such as silicon,have served as the cornerstone of modern technologies for over half a century.This has been due to extensive research and engineering on new techniques to continuously enrich silicon-based materials system and,subsequently,to develop better performed silicon-based devices.Meanwhile,in the emerging post Moore era,layered semiconductor materials,such as transition metal dichalcogenides(TMDs),have garnered considerable research interest due to their unique electronic and optoelectronic properties,which hold great promise for powering the new era of next generation electronics.As a result,techniques for engineering the properties of layered semiconductors have expanded the possibilities of layered semiconductor-based devices.However,there remain significant limitations in the synthesis and engineering of layered semiconductors,impeding the utilization of layered semiconductor-based devices for mass applications.As a practical alternative,heterogeneous integration between layered and traditional semiconductors provides valuable opportunities to combine the distinctive properties of layered semiconductors with well-developed traditional semiconductors materials system.Here,we provide an overview of the comparative coherence between layered and traditional semiconductors,starting with TMDs as the representation of layered semiconductors.We highlight the meaningful opportunities presented by the heterogeneous integration of layered semiconductors with traditional semiconductors,representing an optimal strategy poised to propel the emerging semiconductor research community and chip industry towards unprecedented advancements in the coming decades.展开更多
GaN-based p-channel heterostructure field-effect transistors(p-HFETs)face significant constraints on on-state currents compared with n-channel high electron mobility transistors.In this work,we propose a novel double ...GaN-based p-channel heterostructure field-effect transistors(p-HFETs)face significant constraints on on-state currents compared with n-channel high electron mobility transistors.In this work,we propose a novel double heterostructure which introduces an additional p-GaN insertion layer into traditional p-HFETs.The impact of the device structure on the hole densities and valence band energies of both the upper and lower channels is analyzed by using Silvaco TACD simulations,including the thickness of the upper AlGaN layer and the doping impurities and concentration in the GaN buffer layer,as well as the thickness and Mg-doping concentration in the p-GaN insertion layer.With the help of the p-GaN insertion layer,the C-doping concentration in the GaN buffer layer can be reduced,while the density of the two-dimensional hole gas in the lower channel is enhanced at the same time.This work suggests that a double heterostructure with a p-GaN insertion layer is a better approach to improve p-HFETs compared with those devices with C-doped buffer layer alone.展开更多
Constructing layered-spinel composites is important to improve the rate performance of lithium-rich layered oxides.However,up to now,the effect of microstructure of composites on the rate performance has not been well...Constructing layered-spinel composites is important to improve the rate performance of lithium-rich layered oxides.However,up to now,the effect of microstructure of composites on the rate performance has not been well investigated.In this study,a series of samples were prepared by a simple protonation and de-protonation for the pristine layered material(LiMnNiCoO)obtained by sol-gel method.The characterizations of XRD,Raman and oxidation-reduction potentials of charge-discharge curves demonstrated that these samples after de-protonation are layered-spinel composites.When these composites were tested as a cathode of lithium-ion batteries,the sample treated with 0.1 M of nitric acid exhibited higher discharge capacities at each current density than that of other composites.The outstanding rate performance is attributed to the high concentration of conduction electron resulting from the low average valence state(44.2%of Ni)as confirmed by its high conductivity(1.124×10??mat39800Hz)and ambient temperature magnetic susceptibility(8.40×10emu/Oe?mol).This work has a guiding significance for the synthesis of high rate performance of lithium battery cathode materials.展开更多
The introduction of spinel phase to form the layered-spinel structure(LSS)is an effective way to improve the electrochemical performance of Li-and Mn-rich layered oxides(LMR).But is this structure universal for all LM...The introduction of spinel phase to form the layered-spinel structure(LSS)is an effective way to improve the electrochemical performance of Li-and Mn-rich layered oxides(LMR).But is this structure universal for all LMR systems?In this work,different Mn/Ni ratio systems with the LSS are discussed in detail.It is found that,high discharge capacity(200.8 mA h g^(-1) at 1C rate;1C=250 mA h g^(-1))as well as high capacity-retention(94%at 1C rate after 100 cycles)can be achieved by forming the LSS for low-Ni system(Mn/Ni=5.0).However,the capacity retention decreases severely in the high-Ni system(Mn/Ni=3.5,2.6).For example,when the ratio of Mn/Ni is 3.5,the capacity-retention of the layered-spinel sample was only 65.8%,compared to the 83%of the original LMR sample.The Ex-situ XRD,XPS,and HRTEM results demonstrate that the introduction of spinel phase in high-Ni system accelerates the transition and collapse of the crystal structure.This work provides guidance for optimizing the proportions of elements and the design of structures for the LMR.展开更多
With the development of Moore's law, the future trend of devices will inevitably be shrinking and integration to further achieve size reduction. The emergence of new two-dimensional non-layered materials(2DNLMs) n...With the development of Moore's law, the future trend of devices will inevitably be shrinking and integration to further achieve size reduction. The emergence of new two-dimensional non-layered materials(2DNLMs) not only enriches the 2D material family to meet future development, but also stimulates the global enthusiasm for basic research and application technologies in the 2D field. Van der Waals(vd W) heterostructures, in which two-dimensional layered materials(2DLMs)are physically stacked layer by layer, can also occur between 2DLMs and 2DNLMs hybrid heterostructures, providing an alternative platform for nanoelectronics and optoelectronic applications. Here, we outline the recent developments of2DLMs/2DNLMs hybrid heterostructures, with particular emphasis on major advances in synthetic methods and applications. And the categories and crystal structures of 2DLMs and 2DNLMs are also shown. We highlight some promising applications of the heterostructures in electronics, optoelectronics, and catalysis. Finally, we provide conclusions and future prospects in the 2D materials field.展开更多
Si-based multilayer structures are widely used in current microelectronics. During their preparation, some inhomogeneous residual stress is induced, resulting in competition between interface mismatching and surface e...Si-based multilayer structures are widely used in current microelectronics. During their preparation, some inhomogeneous residual stress is induced, resulting in competition between interface mismatching and surface energy and even leading to structure failure. This work presents a methodological study on the measurement of residual stress in a multi-layer semiconductor heterostructure. Scanning electron microscopy（SEM）, micro-Raman spectroscopy（MRS）, and transmission electron microscopy（TEM） were applied to measure the geometric parameters of the multilayer structure. The relationship between the Raman spectrum and the stress/strain on the [100] and [110] crystal orientations was determined to enable surface and crosssection residual stress analyses, respectively. Based on the Raman mapping results, the distribution of residual stress along the depth of the multi-layer heterostructure was successfully obtained.展开更多
Using the measured capacitance voltage curves and the photocurrent spectrum obtained from the Ni Schottky contact on a strained Al0.3Ga0.7N/GaN heterostructure, the value of the relative permittivity of the AlGaN barr...Using the measured capacitance voltage curves and the photocurrent spectrum obtained from the Ni Schottky contact on a strained Al0.3Ga0.7N/GaN heterostructure, the value of the relative permittivity of the AlGaN barrier layer was analysed and calculated by self-consistently solving SchrSdinger＇s and Poisson＇s equations. It is shown that the calculated values of the relative permittivity are different from those formerly reported, and reverse biasing the Ni Schottky contact has an influence on the value of the relative permittivity. As the reverse bias increases from 0 V to -3 V, the value of the relative permittivity decreases from 7.184 to 7.093.展开更多
In this study, we investigate the effects of Ga N cap layer thickness on the two-dimensional electron gas（2DEG）electron density and 2DEG electron mobility of Al N/Ga N heterostructures by using the temperature-depen...In this study, we investigate the effects of Ga N cap layer thickness on the two-dimensional electron gas（2DEG）electron density and 2DEG electron mobility of Al N/Ga N heterostructures by using the temperature-dependent Hall measurement and theoretical fitting method. The results of our analysis clearly indicate that the Ga N cap layer thickness of an Al N/Ga N heterostructure has influences on the 2DEG electron density and the electron mobility. For the Al N/Ga N heterostructures with a 3-nm Al N barrier layer, the optimized thickness of the Ga N cap layer is around 4 nm and the strained a-axis lattice constant of the Al N barrier layer is less than that of Ga N.展开更多
Ni Schottky contacts on A1GaN/CaN heterostructures were fabricated. Some samples were thermally treated in a furnace with N2 ambience at 600 ~C for different times （0.5 h, 4.5 h, 10.5 h, 18 h, 33 h, 48 h, and 72 h）,...Ni Schottky contacts on A1GaN/CaN heterostructures were fabricated. Some samples were thermally treated in a furnace with N2 ambience at 600 ~C for different times （0.5 h, 4.5 h, 10.5 h, 18 h, 33 h, 48 h, and 72 h）, the others were thermally treated for 0.5 h at different temperatures （500 ~C, 600 ~C, 700 ~C, and 800 ~C）. With the measured current-voltage （I-V） and capacitance-voltage （C V） curves and by self-consistently solving Schrodinger＇s and Poisson＇s equations, we found that the relative permittivity of the A1GaN barrier layer was related to the piezoelectric and the spontaneous polarization of the A1GaN barrier layer. The relative permittivity was in proportion to the strain of the A1GaN barrier layer. The relative permittivity and the strain reduced with the increased thermal stress time until the A1GaN barrier totally relaxed （after 18 h at 600 ~C in the current study）, and then the relative permittivity was almost a constant with the increased thermal strcss time. When the sample was treated at 800 ~C for 0.5 h, the relative permittivity was less than the constant due to the huge diffusion of the contact metal atoms. Considering the relation between the relative permittivity of the A1GaN barrier layer and the converse piezoelectric effect, the conclusion can be made that a moderate thermal stress can restrain the converse piezoelectric effect and can improve the stability of A1GaN/GaN heterostructure devices.展开更多
In an attempt to overcome the drawbacks of high-capacity layered lithium-rich cathodes xLi2MnO3·(1–x)LiMO2(0<x<1,M=Mn,Ni,and Co),the spinel clothed layered heterostructured materials,x’Li4Mn5O12·(1–...In an attempt to overcome the drawbacks of high-capacity layered lithium-rich cathodes xLi2MnO3·(1–x)LiMO2(0<x<1,M=Mn,Ni,and Co),the spinel clothed layered heterostructured materials,x’Li4Mn5O12·(1–x’)Li[Li0.2Mn0.55Ni0.15Co0.1]O2(x’=0.01,0.03,0.05)have been proposed and synthesized as high-performance cathode materials for high-energy and high-power Li-ion batteries.Based on the characterizations of X-ray diffraction(XRD),transmission electron microscopy(TEM),Raman scattering spectroscopy,it is indicated that ultrathin 3 V spinel Li4Mn5O12 has been successfully clothed on the layered lithium-rich cathode.Electrochemical tests demonstrate the sample 0.01Li4Mn5O12·0.99 Li[Li0.2Mn0.55Ni0.15Co0.1]O2 with an ultrathin clothing layer of spinel phase,exhibits the highest reversible capacity of 289.4 mAh g^(-1) and maintains 259.8 mAh g^(-1) after 80 cycles at 0.1 C rate.Meanwhile,it delivers outstanding rate discharge capacities of 229.4 mAh g^(-1) at 1 C,216.8 mAh g^(-1) at 2 C and 184.4 mAh g^(-1) at 5 C as well as alleviated voltage fade.It is believed the ultrathin clothing spinel layer plays a vital role in the modification of the materials kinetics,and structural and electrochemical stability of the heterostructured cathode.展开更多
In the last decade,two-dimensional layered materials(2DLMs)have been drawing extensive attentions due to their unique properties,such as absence of surface dangling bonds,thickness-dependent bandgap,high absorption co...In the last decade,two-dimensional layered materials(2DLMs)have been drawing extensive attentions due to their unique properties,such as absence of surface dangling bonds,thickness-dependent bandgap,high absorption coeffi-cient,large specific surface area,and so on.But the high-quality growth and transfer of wafer-scale 2DLMs films is still a great challenge for the commerciali-zation of pure 2DLMs-based photodetectors.Conversely,the material growth and device fabrication technologies of three-dimensional(3D)semiconductors photodetectors tend to be gradually matured.However,the further improvement of the photodetection performance is limited by the difficult heterogeneous inte-gration or the inferior crystal quality via heteroepitaxy.Fortunately,2D/3D van der Waals heterostructures(vdWH)combine the advantages of the two types of materials simultaneously,which may provide a new platform for developing high-performance optoelectronic devices.Here,we first discuss the unique advantages of 2D/3D vdWH for the future development of photodetection field and simply introduce the structure categories,working mechanisms,and the typical fabrication methods of 2D/3D vdWH photodetector.Then,we outline the recent progress on 2D/3D vdWH-based photodetection devices integrating 2DLMs with the traditional 3D semiconductor materials,including Si,Ge,GaAs,AlGaN,SiC,and so on.Finally,we highlight the current challenges and pros-pects of heterointegrating 2DLMs with traditional 3D semiconductors toward photodetection applications.展开更多
Li-rich layered oxide(LLO),e.g.,Li_(1.12)[Mn_(0.56)Ni_(0.16)Co_(0.08)]O_(2)(LRMO),is considered as a promising cathode material due to its superior Li-storage capability.However,the poor cycling stability and large vo...Li-rich layered oxide(LLO),e.g.,Li_(1.12)[Mn_(0.56)Ni_(0.16)Co_(0.08)]O_(2)(LRMO),is considered as a promising cathode material due to its superior Li-storage capability.However,the poor cycling stability and large voltage decay,which are related to the phase transition,limit its industrialization process.Herein,a Mo-doped LRMO(Li_(1.12)[Mn_(0.56)Ni_(0.16)Co_(0.08)]_(0.98)Mo_(0.02)O_(2),LRMO-Mo2.0%)was successfully synthesized via a simple combination of co-precipitation with high-temperature calcination for solving the mentioned above-disadvantages.Compared with the pristine counterpart,the as-prepared LRMO-Mo2.0%shows more excellent electrochemical performance in terms of rate capability(reversible capacity of 118 mA·h·g^(−1) at 5 C),cyclic ability(94.3%capacity retention after 100 cycles at 0.2 C)and discharge midpoint voltage decay(0.11 V after 100 cycles).Systematic investigation of structural evolution and electrochemical kinetics elucidate that the synergic effect of robust oxygen framework and layered/spinel heterostructure is the key to its performance improvement.Such synergy helps to stabilize the layered structure by curbing the structural transformation and oxygen escaping during the electrochemical cycling.This work paved the way for the simple and efficient preparation of highly stable LLO cathode materials.展开更多
A thermally grown oxide （TGO） layer is formed at the interface of bond coat/top coat. The TGO growth during thermal exposure in air plays an important role in the spallation of the ceramic layer from the bond coat. ...A thermally grown oxide （TGO） layer is formed at the interface of bond coat/top coat. The TGO growth during thermal exposure in air plays an important role in the spallation of the ceramic layer from the bond coat. High temperature oxidation resistance of four types of atmospheric plasma sprayed TBCs was investigated. These coatings were oxidized at 1000 °C for 24, 48 and 120 h in a normal electric furnace under air atmosphere. Microstructural characterization showed that the growth of the TGO layer in nano NiCrAlY/YSZ/nano Al2O3 coating is much lower than in other coatings. Moreover, EDS and XRD analyses revealed the formation of Ni（Cr,Al）2O4 mixed oxides （as spinel） and NiO onto the Al2O3 （TGO） layer. The formation of detrimental mixed oxides （spinels） on the Al2O3 （TGO） layer of nano NiCrAlY/YSZ/nano Al2O3 coating is much lower compared to that of other coatings after 120 h of high temperature oxidation at 1000 °C.展开更多
基金supported by the National Natural Science Foundation of China(NSFC,Nos.62275002,51902078,62074048,62075053)the Anhui Provincial Natural Science Foundation(2008085MF205)the Fundamental Research Funds for the Central Universities(JZ2020HGTB0051,PA2020GDKC0024).
文摘Two-dimensional layered material/semiconductor heterostructures have emerged as a category of fascinating architectures for developing highly efficient and low-cost photodetection devices.Herein,we present the construction of a highly efficient flexible light detector operating in the visible-near infrared wavelength regime by integrating a PdTe2 multilayer on a thin Si film.A representative device achieves a good photoresponse performance at zero bias including a sizeable current on/off ratio exceeding 105,a decent responsivity of~343 mA/W,a respectable specific detectivity of~2.56×10^(12)Jones,and a rapid response time of 4.5/379μs,under 730 nm light irradiation.The detector also displays an outstanding long-term air stability and operational durability.In addition,thanks to the excellent flexibility,the device can retain its prominent photodetection performance at various bending radii of curvature and upon hundreds of bending tests.Furthermore,the large responsivity and rapid response speed endow the photodetector with the ability to accurately probe heart rate,suggesting a possible application in the area of flexible and wearable health monitoring.
基金financially supported by the National Natural Science Foundation of China (Nos. 61971252 and51972182)the Shandong Provincial Natural Science Foundation (ZR2020JQ27 and ZR2021YQ42)the Youth Innovation Team Project of Shandong Provincial Education Department (2020KJN015)。
文摘Atomic layer deposition(ALD) is a versatile technique to deposit metals and metal oxide sensing materials at the atomic scale to achieve improved sensor functions. This article reviews metals and metal oxide semiconductor(MOS) heterostructures for gas sensing applications in which at least one of the preparation steps is carried out by ALD. In particular, three types of MOS-based heterostructures synthesized by ALD are discussed, including ALD of metal catalysts on MOS, ALD of metal oxides on MOS and MOS core–shell(C–S) heterostructures.The gas sensing performances of these heterostructures are carefully analyzed and discussed.Finally, the further developments required and the challenges faced by ALD for the synthesis of MOS gas sensing materials are discussed.
基金supported by National Key R&D Program of China(2020YFB2008704)the National Natural Science Foundation of China(62004114 and 62174098)+1 种基金Beijing Municipal Science and Technology Commission(Z221100005822011)The Tsinghua-Foshan Innovation Special Fund(2021THFS0215)。
文摘As Moore’s law deteriorates,the research and development of new materials system are crucial for transitioning into the post Moore era.Traditional semiconductor materials,such as silicon,have served as the cornerstone of modern technologies for over half a century.This has been due to extensive research and engineering on new techniques to continuously enrich silicon-based materials system and,subsequently,to develop better performed silicon-based devices.Meanwhile,in the emerging post Moore era,layered semiconductor materials,such as transition metal dichalcogenides(TMDs),have garnered considerable research interest due to their unique electronic and optoelectronic properties,which hold great promise for powering the new era of next generation electronics.As a result,techniques for engineering the properties of layered semiconductors have expanded the possibilities of layered semiconductor-based devices.However,there remain significant limitations in the synthesis and engineering of layered semiconductors,impeding the utilization of layered semiconductor-based devices for mass applications.As a practical alternative,heterogeneous integration between layered and traditional semiconductors provides valuable opportunities to combine the distinctive properties of layered semiconductors with well-developed traditional semiconductors materials system.Here,we provide an overview of the comparative coherence between layered and traditional semiconductors,starting with TMDs as the representation of layered semiconductors.We highlight the meaningful opportunities presented by the heterogeneous integration of layered semiconductors with traditional semiconductors,representing an optimal strategy poised to propel the emerging semiconductor research community and chip industry towards unprecedented advancements in the coming decades.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.62104184,62234009,62090014,62188102,62104178,and 62104179)the Fundamental Research Funds for the Central Universities of China(Grant Nos.YJSJ23019,XJSJ23047,and ZDRC2002)+1 种基金the China National Postdoctoral Program for Innovative Talents(Grant No.BX20200262)the China Postdoctoral Science Foundation(Grant No.2021M692499)。
文摘GaN-based p-channel heterostructure field-effect transistors(p-HFETs)face significant constraints on on-state currents compared with n-channel high electron mobility transistors.In this work,we propose a novel double heterostructure which introduces an additional p-GaN insertion layer into traditional p-HFETs.The impact of the device structure on the hole densities and valence band energies of both the upper and lower channels is analyzed by using Silvaco TACD simulations,including the thickness of the upper AlGaN layer and the doping impurities and concentration in the GaN buffer layer,as well as the thickness and Mg-doping concentration in the p-GaN insertion layer.With the help of the p-GaN insertion layer,the C-doping concentration in the GaN buffer layer can be reduced,while the density of the two-dimensional hole gas in the lower channel is enhanced at the same time.This work suggests that a double heterostructure with a p-GaN insertion layer is a better approach to improve p-HFETs compared with those devices with C-doped buffer layer alone.
基金financially supported by NSFC(No.21571176,21611530688,21771171,21671077 and 21025104)
文摘Constructing layered-spinel composites is important to improve the rate performance of lithium-rich layered oxides.However,up to now,the effect of microstructure of composites on the rate performance has not been well investigated.In this study,a series of samples were prepared by a simple protonation and de-protonation for the pristine layered material(LiMnNiCoO)obtained by sol-gel method.The characterizations of XRD,Raman and oxidation-reduction potentials of charge-discharge curves demonstrated that these samples after de-protonation are layered-spinel composites.When these composites were tested as a cathode of lithium-ion batteries,the sample treated with 0.1 M of nitric acid exhibited higher discharge capacities at each current density than that of other composites.The outstanding rate performance is attributed to the high concentration of conduction electron resulting from the low average valence state(44.2%of Ni)as confirmed by its high conductivity(1.124×10??mat39800Hz)and ambient temperature magnetic susceptibility(8.40×10emu/Oe?mol).This work has a guiding significance for the synthesis of high rate performance of lithium battery cathode materials.
基金supported by the National Natural Science Foundation of China (Grant Nos. U20A20145, 21805198, and 21878195)the Distinguished Young Foundation of Sichuan Province (No. 20JCQN0197)+2 种基金the Sichuan Science and Technology Project (No. 2019YFH0149)the Key R&D Project of Sichuan Provincial Department of Science and Technology (No. 2020YFG0471, No. 2020YFG0022)the Sichuan Province Science and Technology Achievement Transfer and Transformation Project (No 21ZHSF0111).
文摘The introduction of spinel phase to form the layered-spinel structure(LSS)is an effective way to improve the electrochemical performance of Li-and Mn-rich layered oxides(LMR).But is this structure universal for all LMR systems?In this work,different Mn/Ni ratio systems with the LSS are discussed in detail.It is found that,high discharge capacity(200.8 mA h g^(-1) at 1C rate;1C=250 mA h g^(-1))as well as high capacity-retention(94%at 1C rate after 100 cycles)can be achieved by forming the LSS for low-Ni system(Mn/Ni=5.0).However,the capacity retention decreases severely in the high-Ni system(Mn/Ni=3.5,2.6).For example,when the ratio of Mn/Ni is 3.5,the capacity-retention of the layered-spinel sample was only 65.8%,compared to the 83%of the original LMR sample.The Ex-situ XRD,XPS,and HRTEM results demonstrate that the introduction of spinel phase in high-Ni system accelerates the transition and collapse of the crystal structure.This work provides guidance for optimizing the proportions of elements and the design of structures for the LMR.
基金Project supported by the National Natural Science Fundation of China (Grant Nos. 61731019, 60908012, 61575008, and 61775007)the Beijing Natural Science Foundation (Grant Nos. 4182015 and 4202010)。
文摘With the development of Moore's law, the future trend of devices will inevitably be shrinking and integration to further achieve size reduction. The emergence of new two-dimensional non-layered materials(2DNLMs) not only enriches the 2D material family to meet future development, but also stimulates the global enthusiasm for basic research and application technologies in the 2D field. Van der Waals(vd W) heterostructures, in which two-dimensional layered materials(2DLMs)are physically stacked layer by layer, can also occur between 2DLMs and 2DNLMs hybrid heterostructures, providing an alternative platform for nanoelectronics and optoelectronic applications. Here, we outline the recent developments of2DLMs/2DNLMs hybrid heterostructures, with particular emphasis on major advances in synthetic methods and applications. And the categories and crystal structures of 2DLMs and 2DNLMs are also shown. We highlight some promising applications of the heterostructures in electronics, optoelectronics, and catalysis. Finally, we provide conclusions and future prospects in the 2D materials field.
基金supported by the National Basic Research Program of China (Grant 2012CB937500)the National Natural Science Foundation of China (Grants 11422219, 11227202, 11372217, 11272232)+1 种基金the Program for New Century Excellent Talents in University (Grant NCET-13)China Scholarship Council (201308120092)
文摘Si-based multilayer structures are widely used in current microelectronics. During their preparation, some inhomogeneous residual stress is induced, resulting in competition between interface mismatching and surface energy and even leading to structure failure. This work presents a methodological study on the measurement of residual stress in a multi-layer semiconductor heterostructure. Scanning electron microscopy（SEM）, micro-Raman spectroscopy（MRS）, and transmission electron microscopy（TEM） were applied to measure the geometric parameters of the multilayer structure. The relationship between the Raman spectrum and the stress/strain on the [100] and [110] crystal orientations was determined to enable surface and crosssection residual stress analyses, respectively. Based on the Raman mapping results, the distribution of residual stress along the depth of the multi-layer heterostructure was successfully obtained.
基金supported by the National Natural Science Foundation of China (Grant No 10774090)the National Basic Research Program of China (Grant No 2007CB936602)
文摘Using the measured capacitance voltage curves and the photocurrent spectrum obtained from the Ni Schottky contact on a strained Al0.3Ga0.7N/GaN heterostructure, the value of the relative permittivity of the AlGaN barrier layer was analysed and calculated by self-consistently solving SchrSdinger＇s and Poisson＇s equations. It is shown that the calculated values of the relative permittivity are different from those formerly reported, and reverse biasing the Ni Schottky contact has an influence on the value of the relative permittivity. As the reverse bias increases from 0 V to -3 V, the value of the relative permittivity decreases from 7.184 to 7.093.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11174182 and 61306113)the Specialized Research Fund for the Doctoral Program of Higher Education,China(Grant No.20110131110005)
文摘In this study, we investigate the effects of Ga N cap layer thickness on the two-dimensional electron gas（2DEG）electron density and 2DEG electron mobility of Al N/Ga N heterostructures by using the temperature-dependent Hall measurement and theoretical fitting method. The results of our analysis clearly indicate that the Ga N cap layer thickness of an Al N/Ga N heterostructure has influences on the 2DEG electron density and the electron mobility. For the Al N/Ga N heterostructures with a 3-nm Al N barrier layer, the optimized thickness of the Ga N cap layer is around 4 nm and the strained a-axis lattice constant of the Al N barrier layer is less than that of Ga N.
基金Project supported by the National Natural Science Foundation of China (Grant No.10774090)the National Basic Research Program of China (Grant No.2007CB936602)
文摘Ni Schottky contacts on A1GaN/CaN heterostructures were fabricated. Some samples were thermally treated in a furnace with N2 ambience at 600 ~C for different times （0.5 h, 4.5 h, 10.5 h, 18 h, 33 h, 48 h, and 72 h）, the others were thermally treated for 0.5 h at different temperatures （500 ~C, 600 ~C, 700 ~C, and 800 ~C）. With the measured current-voltage （I-V） and capacitance-voltage （C V） curves and by self-consistently solving Schrodinger＇s and Poisson＇s equations, we found that the relative permittivity of the A1GaN barrier layer was related to the piezoelectric and the spontaneous polarization of the A1GaN barrier layer. The relative permittivity was in proportion to the strain of the A1GaN barrier layer. The relative permittivity and the strain reduced with the increased thermal stress time until the A1GaN barrier totally relaxed （after 18 h at 600 ~C in the current study）, and then the relative permittivity was almost a constant with the increased thermal strcss time. When the sample was treated at 800 ~C for 0.5 h, the relative permittivity was less than the constant due to the huge diffusion of the contact metal atoms. Considering the relation between the relative permittivity of the A1GaN barrier layer and the converse piezoelectric effect, the conclusion can be made that a moderate thermal stress can restrain the converse piezoelectric effect and can improve the stability of A1GaN/GaN heterostructure devices.
基金This work was supported by the National Key R&D Program of China(No.2016YFB0100301)the National Natural Science Foun-dation of China(Nos.21875022,51802020,51802019,U1664255)+1 种基金the Science and Technology Innovation Foundation of Bejjing Institute of Technology Chongqing Innovation Center(No.2020CX5100006)the Young Elite Scientists Sponsorship Program by CAST(No.2018QNRC001).N.L.and L.C.acknowledge the support from Beijing Institute of Technology Research Fund Program for Young Scholars.
文摘In an attempt to overcome the drawbacks of high-capacity layered lithium-rich cathodes xLi2MnO3·(1–x)LiMO2(0<x<1,M=Mn,Ni,and Co),the spinel clothed layered heterostructured materials,x’Li4Mn5O12·(1–x’)Li[Li0.2Mn0.55Ni0.15Co0.1]O2(x’=0.01,0.03,0.05)have been proposed and synthesized as high-performance cathode materials for high-energy and high-power Li-ion batteries.Based on the characterizations of X-ray diffraction(XRD),transmission electron microscopy(TEM),Raman scattering spectroscopy,it is indicated that ultrathin 3 V spinel Li4Mn5O12 has been successfully clothed on the layered lithium-rich cathode.Electrochemical tests demonstrate the sample 0.01Li4Mn5O12·0.99 Li[Li0.2Mn0.55Ni0.15Co0.1]O2 with an ultrathin clothing layer of spinel phase,exhibits the highest reversible capacity of 289.4 mAh g^(-1) and maintains 259.8 mAh g^(-1) after 80 cycles at 0.1 C rate.Meanwhile,it delivers outstanding rate discharge capacities of 229.4 mAh g^(-1) at 1 C,216.8 mAh g^(-1) at 2 C and 184.4 mAh g^(-1) at 5 C as well as alleviated voltage fade.It is believed the ultrathin clothing spinel layer plays a vital role in the modification of the materials kinetics,and structural and electrochemical stability of the heterostructured cathode.
基金Funding information National Natural Science Foundation of China,Grant/Award Numbers:61974174,61904184,62174061,62174063National Key Research and Development Program of China,Grant/Award Number:2022YFB3605104+3 种基金Key Research and Development Program of Hubei Province,Grant/Award Number:2021BAA071Key Laboratory of Infrared Imaging Materials and Detectors,the Shanghai Institute of Technical Physics,the Chinese Academy of Sciences,Grant/Award Number:IIMDKFJJ-21-07Fundamental Research Funds for the Central Universities,Grant/Award Number.2020kfyXJJS124Director Fund of WNLO。
文摘In the last decade,two-dimensional layered materials(2DLMs)have been drawing extensive attentions due to their unique properties,such as absence of surface dangling bonds,thickness-dependent bandgap,high absorption coeffi-cient,large specific surface area,and so on.But the high-quality growth and transfer of wafer-scale 2DLMs films is still a great challenge for the commerciali-zation of pure 2DLMs-based photodetectors.Conversely,the material growth and device fabrication technologies of three-dimensional(3D)semiconductors photodetectors tend to be gradually matured.However,the further improvement of the photodetection performance is limited by the difficult heterogeneous inte-gration or the inferior crystal quality via heteroepitaxy.Fortunately,2D/3D van der Waals heterostructures(vdWH)combine the advantages of the two types of materials simultaneously,which may provide a new platform for developing high-performance optoelectronic devices.Here,we first discuss the unique advantages of 2D/3D vdWH for the future development of photodetection field and simply introduce the structure categories,working mechanisms,and the typical fabrication methods of 2D/3D vdWH photodetector.Then,we outline the recent progress on 2D/3D vdWH-based photodetection devices integrating 2DLMs with the traditional 3D semiconductor materials,including Si,Ge,GaAs,AlGaN,SiC,and so on.Finally,we highlight the current challenges and pros-pects of heterointegrating 2DLMs with traditional 3D semiconductors toward photodetection applications.
基金This work was supported by the National Natural Science Foundation of China(Grant No.51964017,Grant No.51874151)the Jiangxi Provincial Natural Science Foundation(Grant No.20212BAB214004)+1 种基金the Jiangxi Provincial Education Office Natural Science Fund Project(Grant No.GJJ201413)the Jiangxi University of Science and Technology College Student Innovation and Entrepreneurship Training Program Support Project(Grant No.DC2019-042).
文摘Li-rich layered oxide(LLO),e.g.,Li_(1.12)[Mn_(0.56)Ni_(0.16)Co_(0.08)]O_(2)(LRMO),is considered as a promising cathode material due to its superior Li-storage capability.However,the poor cycling stability and large voltage decay,which are related to the phase transition,limit its industrialization process.Herein,a Mo-doped LRMO(Li_(1.12)[Mn_(0.56)Ni_(0.16)Co_(0.08)]_(0.98)Mo_(0.02)O_(2),LRMO-Mo2.0%)was successfully synthesized via a simple combination of co-precipitation with high-temperature calcination for solving the mentioned above-disadvantages.Compared with the pristine counterpart,the as-prepared LRMO-Mo2.0%shows more excellent electrochemical performance in terms of rate capability(reversible capacity of 118 mA·h·g^(−1) at 5 C),cyclic ability(94.3%capacity retention after 100 cycles at 0.2 C)and discharge midpoint voltage decay(0.11 V after 100 cycles).Systematic investigation of structural evolution and electrochemical kinetics elucidate that the synergic effect of robust oxygen framework and layered/spinel heterostructure is the key to its performance improvement.Such synergy helps to stabilize the layered structure by curbing the structural transformation and oxygen escaping during the electrochemical cycling.This work paved the way for the simple and efficient preparation of highly stable LLO cathode materials.
基金financed by Institutional Scholarship provided by Universiti Teknologi Malaysia and the Ministry of Higher Education of Malaysiathe Ministry of Higher Education of Malaysia and Universiti Teknologi Malaysia (UTM) for providing research facilities and financial support under the grant Q.J130000.2524.02H55
文摘A thermally grown oxide （TGO） layer is formed at the interface of bond coat/top coat. The TGO growth during thermal exposure in air plays an important role in the spallation of the ceramic layer from the bond coat. High temperature oxidation resistance of four types of atmospheric plasma sprayed TBCs was investigated. These coatings were oxidized at 1000 °C for 24, 48 and 120 h in a normal electric furnace under air atmosphere. Microstructural characterization showed that the growth of the TGO layer in nano NiCrAlY/YSZ/nano Al2O3 coating is much lower than in other coatings. Moreover, EDS and XRD analyses revealed the formation of Ni（Cr,Al）2O4 mixed oxides （as spinel） and NiO onto the Al2O3 （TGO） layer. The formation of detrimental mixed oxides （spinels） on the Al2O3 （TGO） layer of nano NiCrAlY/YSZ/nano Al2O3 coating is much lower compared to that of other coatings after 120 h of high temperature oxidation at 1000 °C.
