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A novel SOI pressure sensor for high temperature application 被引量:3
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作者 李赛男 梁庭 +3 位作者 王伟 洪应平 郑庭丽 熊继军 《Journal of Semiconductors》 EI CAS CSCD 2015年第1期120-124,共5页
The silicon on insulator(SOI) high temperature pressure sensor is a novel pressure sensor with highperformance and high-quality. A structure of a SOI high-temperature pressure sensor is presented in this paper.The k... The silicon on insulator(SOI) high temperature pressure sensor is a novel pressure sensor with highperformance and high-quality. A structure of a SOI high-temperature pressure sensor is presented in this paper.The key factors including doping concentration and power are analyzed. The process of the sensor is designed with the critical process parameters set appropriately. The test result at room temperature and high temperature shows that nonlinear error below is 0.1%, and hysteresis is less than 0.5%. High temperature measuring results show that the sensor can be used for from room temperature to 350℃ in harsh environments. It offers a reference for the development of high temperature piezoresistive pressure sensors. 展开更多
关键词 SOI high temperature pressure sensor doping concentration power
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