Research on the Effect of High Power Microwave on Low Noise Amplifier and Limiter Based on the Injection Method

The reliability of electronic device is threatened in high power microwave (HPM) environment. In accordance with the situation that the emulation is ineffective in evaluating the accuracy and precision of the HPM effect to electronic device, the experimental method is used to resolve the problem. Low Noise Amplifier (LNA) and Limiter are selected as the objects for the experiments, the structural characteristic of the front-end of radar receiver is described, the phenomena and criterion are elaborated and analyzed using injection method due to its ability to get an accurate threshold avoiding the complex coupling, the basic principle of injection experiment is demonstrated, and the method and process of effect experiment about Low Noise Amplifier and Limiter are also explained. The experimental system is established, and the system is composed of low power microwave source such as TWT, test equipment for obtaining the effect parameters, and some of auxiliary equipments as camera, optical microscope or electron microscopy, attenuator, detector, and directional coupler etc. The microwave delivered from source is adjusted to the power infused by attenuator, and pour in the decanting point of effecter via directional coupler, then the couple signal created by directional coupler is input to the recording instrument after detecting by detector, finally the power of effecter is obtained. The value of power, which damages the effecter in the microwave pulse environment, is classified at the index of sensitivity, and the threshold is obtained by power diagnose and wave test. Some regular understandings of the HPM effect to electronic device are obtained based on the results of the experiments. It turns out that the index of electronic device is influenced significantly by the energy via front door coupling, the MOSFET made up of GaAs is the most wearing part to HPM in LNA, the damage threshold of LNA is about 40dBm under single pulse while in repetitive pulse the value is from 33.3dBm to 43.9dBm according to different wave band. The damage threshold of Limiter is about 56dBm to80dBm.

A C-band 55% PAE high gain two-stage power amplifier based on AlGaN/GaN HEMT

A C-band high efficiency and high gain two-stage power amplifier based on A1GaN/GaN high electron mobility transistor （HEMT） is designed and measured in this paper. The input and output impedances for the optimum power-added efficiency （PAE） are determined at the fundamental and 2nd harmonic frequency （f0 and 2f0）. The harmonic manipulation networks are designed both in the driver stage and the power stage which manipulate the second harmonic to a very low level within the operating frequency band. Then the inter-stage matching network and the output power combining network are calculated to achieve a low insertion loss. So the PAE and the power gain is greatly improved. In an operation frequency range of 5,4 GHz-5.8 GHz in CW mode, the amplifier delivers a maximum output power of 18.62 W, with a PAE of 55.15 % and an associated power gain of 28.7 dB, which is an outstanding performance.

High-repetition-rate and high-power efficient picosecond thin-disk regenerative amplifier

We present an effective approach to realize a highly efficient,high-power and chirped pulse amplification-free ultrafast ytterbium-doped yttrium aluminum garnet thin-disk regenerative amplifier pumped by a zero-phonon line 969 nm laser diode.The amplifier delivers an output power exceeding 154 W at a pulse repetition rate of 1 MHz with custom-designed 48 pump passes.The exceptional thermal management on the thin disk through high-quality bonding,efficient heat dissipation and a fully locked spectrum collectively contributes to achieving a remarkable optical-to-optical efficiency of 61%and a near-diffraction-limit beam quality with an M2 factor of 1.06.To the best of our knowledge,this represents the highest conversion efficiency reported in ultrafast thin-disk regenerative amplifiers.Furthermore,the amplifier operates at room temperature and exhibits exceptional stability,with root mean square stability of less than 0.33%.This study significantly represents advances in the field of laser amplification systems,particularly in terms of efficiency and average power.This advantageous combination of high efficiency and diffraction limitation positions the thin-disk regenerative amplifier as a promising solution for a wide range of scientific and industrial applications.

A 600W Broadband Doherty Power Amplifier with Improved Linearity for Wireless Communication System

An asymmetric Doherty architecture based on three identical transistors is proposed in this paper. This proposed three.way topology reduces the difficulty in designing matching networks brought by the low optimal impedance of high power transistors. And the inverted Doherty topology as well as carefully chosen value of load impedance makes it possible to extend the bandwidth of high power amplifiers. Besides, bias networks of this proposed three.way architecture are also carefully considered to improve the linearity. The proposed high power three.way Doherty power amplifier(3W.DPA) is designed and fabricated based on theoretic analysis. Its maximum output power is about 600 Watts and the drain efficiency is above 35.5% at 9d B back off output power level from 1.9GHz to 2.2 GHz and the saturated drain efficiency is above 47% across the whole frequency band. The measured concurrent two.tone results suggest that the linearity of DPA is improved by at least 5d B.

High-efficiency S-band harmonic tuning GaN amplifier

In this paper, we present a high-efficiency S-band gallium nitride （GaN） power amplifier （PA）. This amplifier is fabri- cated based on a self-developed GaN high-electron-mobility transistor （HEMT） with 10 mm gate width on SiC substrate. Harmonic manipulation circuits are presented in the amplifier. The matching networks consist of microstrip lines and discrete components. Open-circuited stub lines in both input and output are used to tune the 2rid harmonic wave and match the GaN HEMT to the highest efficiency condition. The developed amplifier delivers an output power of 48.5 dBm （70 W） with a power-added efficiency （PAE） of 72.2% at 2 GHz in pulse condition. When operating at 1.8-2.2 GHz （20% relative bandwidth）, the amplifier provides an output power higher than 48 dBm （,-~ 65 W）, with a PAE over 70% and a power gain above 15 dB. When operating in continuous-wave （CW） operating conditions, the amplifier gives an output power over 46 dBm （40 W） with PAE beyond 60% over the whole operation frequency range.

Design of 35 GHz 1 Watt GaAs pHEMT Power Amplifier MMIC

By using 0.15 μm GaAs pHEMT （pseudomorphic high electron mobility transistor） technology,a design of millimeter wave power amplifier microwave monolithic integrated circuit （MMIC） is presented.With careful optimization on circuit structure,this two-stage power amplifier achieves a simulated gain of 15.5 dB with fluctuation of 1 dB from 33 GHz to 37 GHz.A simulated output power of more than 30 dBm in saturation can be drawn from 3 W DC supply with maximum power added efficiency （PAE） of 26%.Rigorous electromagnetic simulation is performed to make sure the simulation results are credible.The whole chip area is 3.99 mm2 including all bond pads.

Damage effect and mechanism of the GaAs high electron mobility transistor induced by high power microwave

In this paper, we present the damage effect and mechanism of high power microwave （HPM） on AIGaAs/GaAs pseudomorphic high-electron-mobility transistor （pHEMT） of low-noise amplifier （LNA）. A detailed investigation is carried out by simulation and experiment study. A two-dimensional electro-thermal model of the typical GaAs pHEMT induced by HPM is established in this paper. The simulation result reveals that avalanche breakdown, intrinsic excitation, and thermal breakdown all contribute to damage process. Heat accumulation occurs during the positive half cycle and the cylinder under the gate near the source side is most susceptible to burn-out. Experiment is carried out by injecting high power microwave into GaAs pHEMT LNA samples. It is found that the damage to LNA is because of the burn-out at first stage pHEMT. The interiors of the damaged samples are observed by scanning electron microscopy （SEM） and energy dispersive spectrometer （EDS）. Experimental results accord well with the simulation of our model.

All-fiber,high power single-frequency linearly polarized ytterbium-doped fiber amplifier

We report an all-fiber high power,single frequency large-mode area （LMA） linearly polarized ytterbiumdoped fiber amplifiers （YDFA） module,which is based on the master oscillator multi-stage power amplifiers （MOPA）.The maximum output power is 43.8 W at a wavelength of 1064 nm when 60-W launched pump light is coupled,with high slope efficiency of 88%,polarization extinction rate （PER） 17.2 dB and nearly diffraction-limited beam quality （M 2 1.1）.

Evolution of modes in double-clad Raman fiber amplifier

Stimulated Raman scattering in a double cladding optical fiber is studied with a continuous wave laser used as a pump source. Under various launch conditions, pump modes are differently excited. Considering the mode coupling effect among the pump modes, the evolution of the power in the Stokes modes is studied. The results show that the scattered waves （the Stokes waves） in the fiber core with 9%tm diameter and 0.14 NA could propagate predominantly in the fundamental mode of the fiber by carefully adjusting the pump light launching conditions.

基于谐波控制的Doherty功率放大器设计

功率放大器是无线通信里面重要的射频前端电路。为满足现代无线通信对功率放大器高效率的要求,首先基于谐波控制理论分析,设计了一种新型谐波控制电路,此新型谐波控制电路可对功率管产生的封装寄生参数进行补偿,也可对二次谐波、三次谐波进行谐波控制,提高了Doherty功率放大器效率。随后,针对传统Doherty功率放大器限制带宽的问题,提出了采用后匹配结构的方式设计Doherty功率放大器,提高了Doherty功率放大器的带宽。最后,采用Cree公司的CGH40010F GaN HEMT设计一款Doherty功率放大器并进行测试。在1.85~2.15 GHz工作频带内,Doherty功率放大器输出功率可达到44.3~44.8 dBm,增益为12~15 dB,输出漏极效率(DE)大于75%,6 dB回退效率大于60%。结果表明,提出的Doherty功率放大器在效率方面具有显著优势。

S波段GaAs超低噪声限幅低噪声放大器芯片的研制

本文将限幅器嵌入到了低噪声放大器的输入级匹配电路,使得整体限幅放大电路的噪声系数为低噪声放大器的最小噪声系数而不需再加上限幅器的损耗,从而有效降低了整体限幅低噪声放大器的噪声系数。在此基础上,设计并实现了一款S波段限幅低噪声放大器芯片,实现了超低噪声与高耐功率的性能。测试结果表明,该款芯片在目前相近频段所有限幅低噪声放大器产品中噪声系数最小。在2.7 GHz~3.5 GHz工作频带内,实测噪声系数NF≤0.85 dB,增益≥29 dB,带内增益平坦度≤±0.3 dB,静态工作电流≤25 mA,1 dB压缩点输出功率≥8 dBm。在耐功率50 W(250μs脉宽、25%占空比)下试验30 min后不烧毁,恢复到常温时,噪声几乎无变化。芯片尺寸为3450μm×1600μm×100μm。

基于微通道散热的板条激光放大器热仿真分析

众所周知,热效应是限制大功率高能量激光器发展的一大瓶颈,在高能激光产生的过程中伴随着大量的废热产生,影响高能量激光器的光束质量甚至会影响其正常工作。为了保证高能量激光器的稳定运作并研究其工作物质的散热过程中的热分布状态,本文建立了一种用于高能Zig Zag板条激光放大器的双端入水微通道散热模型,利用CFD模拟仿真软件在额定工况下对微通道与空腔热沉进行散热对比,还研究了模型的可变参量:通道高度、翅片厚度,以及水流量对于散热性能的影响。模拟研究发现本文提出的微通道热沉冷却效果优于全腔水冷效果,微通道热沉将晶体表面最高温差控制在4℃以内,表面温度也降低了32;同时在压降允许范围内优化通道参数能再将冷却效果提升10,实现增益介质分布式高效散热。

0.2~2.0GHz100W超宽带GaN功率放大器

设计并实现了一款基于0.25μm GaN高电子迁移率晶体管(HEMT)工艺的100 W超宽带功率放大器。基于SiC无源工艺设计了集成无源器件(IPD)输入预匹配电路芯片;设计了基于陶瓷基片的T型集成输出预匹配电路;基于建立的传输线变压器(TLT)的精确模型,设计了宽带阻抗变换器,在超宽频带内将50Ω的端口阻抗变换至约12.5Ω,再通过多节微带电路与预匹配后的GaN HEMT芯片实现阻抗匹配。最终,以较小的电路尺寸实现了功率放大器的超宽带性能指标。测试结果表明,功率放大器在0.2~2.0 GHz频带内,在漏极电压36 V、输入功率9 W、连续波的工作条件下,输出功率大于103 W,漏极效率大于50%,输入电压驻波比(VSWR)≤2.5。

基于简易实频技术的宽带高效率功率放大器设计

为了满足5G通信系统对功率放大器带宽和效率的要求,基于CGH40010F晶体管,采用简易实频技术,设计了一款工作在n77频段(3.3 GHz~4.2 GHz)的宽带高效率功率放大器。首先采用负载牵引的方法对各频点的基波最佳阻抗值以及二次谐波阻抗空间进行提取,选择简易实频技术设计宽带匹配网络,在其仿真性能良好的前提下,进行了加工测试。测试结果表明,该功率放大器在3.3 GHz~4.2 GHz频段内,漏极效率为58.1%~64.5%,增益为11.1 dB~12.9 dB,饱和输出功率为39.6 dBm~41.3 dBm。该功率放大器的性能良好,且带宽和效率具有一定的优势,可为后续宽带高效率功率放大器的设计提供参考。

基于逆全极点滤波器的高频PWM噪声整形方法

高频开关功率放大器具有高功率、低纹波、高响应的优点,是高加速、高精度定位系统的核心部件。为了解决高频PWM中开关频率与占空比分辨率的矛盾,该文分析调制中噪声整形的基本原理,采用误差反馈结构提取PWM量化噪声进行数字整形,阐述噪声整形滤波器设计约束条件。提出通过逆全极点无限脉冲响应(IIR)滤波器获得有限脉冲响应(FIR)噪声整形滤波器的简明设计方法,仿真及实验表明,该文提出的方法可利用低阶FIR整形滤波器获得平坦的通带和高整形衰减。在不足9位的PWM中,4阶的FIR噪声整形滤波器能够恢复调制信号在10 kHz频段内约40 dB的信噪比损失。

面向功放-整流一体化设计的逆F类功率放大器

针对微波无线功率传输对于高功率处理能力的高效整流器需求,提出一种基于高效率功率放大器的功放-整流一体化设计思路。文章首先使用型号为CG2H40010F的氮化镓高电子迁移率晶体管(GaN HEMT),通过谐波控制、负载牵引等方法,设计出一款工作在2.45GHz逆F类高效率功率放大器。在高效率功率放大器的基础上基于时间反转对偶理论,通过改变逆F类功率放大器电流方向,同时结合耦合器和移相器实现了高功率容量整流电路的设计。仿真结果表明,在2.45GHz工作频率下,功率放大器的输入功率为28dBm时,功率附加效率达到76%,输出功率40dBm;整流电路的输入功率为41dBm时,RF-DC转换效率可达到79%,整流最佳效率大于80%,显示了整流器的高功率处理能力。引入了两个单刀双掷开关实现功率放大器和整流器的功能切换,文章对核心电路功率放大器进行了实物测试,测试结果与仿真重合较好,验证了功放-整流一体化设计的可行性。

一种V波段高效率5W GaN功率放大器MMIC

基于0.13μm SiC基GaN高电子迁移率晶体管(HEMT)工艺,设计了一款V波段GaN功率放大器单片微波集成电路(MMIC)。该功率放大器MMIC采用三级放大拓扑结构以满足增益需求;使用高低阻抗微带传输线进行阻抗匹配,通过威尔金森功分器/合成器完成功率放大器的末端功率合成;通过对晶体管宽长比的设计与多胞晶体管的合成,实现了功率放大器的高功率稳定工作和高效率输出。经过测试,在59~61 GHz频率范围内,在占空比为20%、脉宽为100μs时,该功率放大器MMIC的饱和输出功率达到37 dBm以上,功率附加效率(PAE)大于21.1%,功率增益大于17 dB;连续波测试条件下输出功率大于36.8 dBm, PAE大于21%。该设计在输出功率和PAE上具有一定的优势。

2.4 GHz GaAs HBT高线性度功率放大器设计

为了满足Wi-Fi 6射频前端对高线性度、高发射功率的需求,基于GaAs HBT工艺设计工作于2.4~2.5 GHz的功率放大器.利用有源自适应偏置、二次谐波阻抗控制和多级放大器失真互补实现所设计放大器的高线性输出功率,通过键合金线的高品质因子寄生电感降低输出匹配的插损,并将直流与射频功率检测集成.测试结果表明,所设计放大器的小信号增益为30.6~30.7 dB,输入输出回波损耗均小于-10 dB,输出1 dB压缩功率为29.2 dBm,对应功率附加效率为26.4%.在802.11ax标准、MCS7调制策略、40 MHz带宽的测试信号下,当误差矢量幅度小于-30 dB时,所设计放大器的最大输出功率为24.1 dBm.在MCS9调制策略下,当误差矢量幅度小于-35 dB时,所设计放大器的最大输出功率为23.6 dBm;在MCS11调制策略下,当误差矢量幅度小于-40 dB时,所设计放大器的最大输出功率为22.4 dBm,对应最大功率附加效率为10.2%.

高压大电流磁轴承功率放大器的系统研究与应用

针对三相三线制交流电网输入、高压大电流隔离输出、交流掉电不间断供电10 min,以及较大频率响应范围、稳态特性和动态特性良好的要求,提出一种N+1冗余不间断的稳压电源和三态PWM调制的功率放大器。阐述了磁悬浮轴承控制系统的工作原理,设计并制造了600 V/60 A的高压大电流功率放大器系统。实验结果表明,稳压电源能够实现10 min左右的不间断供电且变换器具有冗余功能,磁轴承功率放大器具有较小的输出电流纹波,同时具有较好的跟随特性、稳态特性、动态特性和较大频率响应范围。样机实验结果表明,所设计系统能够满足要求,对磁悬浮轴承控制系统的商业化生产制造具有一定的指导意义。

0.5~2.5 GHz超宽带高功率功率放大器设计

本文首先对NXP半导体公司生产的MMRF5014H射频功率氮化镓晶体管进行源牵引和负载牵引获取晶体管的源阻抗和负载阻抗,再采用切比雪夫阻抗变换器进行阻抗匹配,设计了一款工作频率在0.5~2.5 GHz范围内的超宽带、高功率、高增益的功率放大器。仿真结果显示:在工作频带内饱和输出功率范围为50.09 dBm(102.1 W)~51.53 dBm(142.1 W),增益范围为10.09~11.66 dB,功率附加效率为49.61%~65.08%。