A novel self-alignment method for high precision silicon diffraction microlens arrays preparation and its integration with infrared focal plane arrays

Silicon(Si)diffraction microlens arrays are usually used to integrating with infrared focal plane arrays(IRFPAs)to improve their performance.The errors of lithography are unavoidable in the process of the Si diffrac-tion microlens arrays preparation in the conventional engraving method.It has a serious impact on its performance and subsequent applications.In response to the problem of errors of Si diffraction microlens arrays in the conven-tional method,a novel self-alignment method for high precision Si diffraction microlens arrays preparation is pro-posed.The accuracy of the Si diffractive microlens arrays preparation is determined by the accuracy of the first li-thography mask in the novel self-alignment method.In the subsequent etching,the etched area will be protected by the mask layer and the sacrifice layer or the protective layer.The unprotection area is carved to effectively block the non-etching areas,accurately etch the etching area required,and solve the problem of errors.The high precision Si diffraction microlens arrays are obtained by the novel self-alignment method and the diffraction effi-ciency could reach 92.6%.After integrating with IRFPAs,the average blackbody responsity increased by 8.3%,and the average blackbody detectivity increased by 10.3%.It indicates that the Si diffraction microlens arrays can improve the filling factor and reduce crosstalk of IRFPAs through convergence,thereby improving the perfor-mance of the IRFPAs.The results are of great reference significance for improving their performance through opti-mizing the preparation level of micro nano devices.

High temperature oxidation behavior of Ti(Al,Si)_3 diffusion coating on γ-TiAl by cold spray

A Ti(Al,Si)3 diffusion coating was prepared on γ-TiAl alloy by cold sprayed Al?20Si alloy coating, followed by a heat-treatment. The isothermal and cyclic oxidation tests were conducted at 900 °C for 1000 h and 120 cycles to check the oxidation resistance of the coating. The microstructure and phase transformation of the coating before and after the oxidation were studied by SEM, XRD and EPMA. The results indicate that the diffusion coating shows good oxidation resistance. The mass gain of the diffusion coating is only a quarter of that of bare alloy. After oxidation, the diffusion coating is degraded into three layers: an inner TiAl2 layer, a two-phase intermediate layer composed of a Ti(Al,Si)3 matrix and Si-rich precipitates, and a porous layer because of the inter-diffusion between the coating and substrate.

Recovery of high purity silicon from SoG crystalline silicon cutting slurry waste

The composition and size distribution of cutting waste were characterized. The Si-rich powders were obtained from the cutting waste using a physical sedimentation process, and then further purified by removing impurity using acid leaching. The effects of process parameters such as acid leaching time, temperature and the ratio of solid to liquid on the purification efficiency were investigated, and the parameters were optimized. Afterwards, the high-purity Si ingot was obtained by melting the Si-rich powders in vacuum furnace. Finally, the high purity Si with 99.96%Si, 1.1×10^-6 boron （B）, and 4.0×10^-6 phosphorus （P） were obtained. The results indicate that it is feasible to extract high-purity Si, and further produce SoG-Si from the cutting slurry waste.

大功率射频Si-VDMOS功率晶体管研制

介绍了大功率射频硅-垂直双扩散金属氧化物场效应晶体管(Si-VDMOS)的研制结果,采用栅分离降低反馈电容技术、多子胞降低源极电感技术等,从芯片原理着手,比较分析两种芯片结构设计对反馈电容的影响,以及两种布局引线对源极电感的影响,并研制出了百瓦级以上大功率射频Si-VDMOS功率晶体管系列产品。产品主要性能如下:在工作电压28 V及连续波下,采用8胞合成时,225 MHz输出功率达200 W以上,500 MHz输出功率达150 W以上;进一步增加子胞数量,采用12胞合成时,225 MHz输出功率达300 W以上,同时具备良好的增益及效率特性,与国外大功率射频Si-VDMOS功率晶体管的产品参数相比,达到了同类产品水平。

Influence of high energy ball milling on Al-30Si powder and ceramic particulate

The influence of high energy ball milling on Al 30Si powder and ceramic particulate SiC was studied by means of SEM, XRD and DSC. The results show that Al 30Si powder and their microstructure are obviously refined after high energy ball milling process. The alloy powder and SiC p stick closely to each other without interfacial reaction. DSC results detect no reaction but relaxation of the samples. So high energy ball milling can be used as an effective method for ceramic particulate pre treatment in the fabrication of MMC.

Characterization of A390 aluminum alloy produced at different slow shot speeds using vacuum assisted high pressure die casting

The effects of vacuum assistance on the microstructure and mechanical properties of high pressure die cast A390alloy at different slow shot speeds were evaluated.Plate-shaped specimens of hypereutectic A390aluminum alloy were produced on a TOYO BD?350V5cold chamber die casting machine incorporated with a self-improved TOYO vacuum system.According to the results,the vacuum pressure inside the die cavity increased linearly with the increasing slow shot speed at the beginning of mold filling.Meanwhile,tensile properties of vacuum die castings were deteriorated by the porosity content.In addition,the average primary silicon size decreased from23to14μm when the slow shot speed increased from0.05to0.2m/s,which has a binary functional relationship with the slow shot speed.After heat treatment,microstructural morphologies revealed that needle-shaped and thin-flaked eutectic silicon particles became rounded while Al2Cu dissolved intoα(Al)matrix.Furthermore,the fractography revealed that the fracture mechanism has evolved from brittle transgranular fracture to a fracture mode with many dimples after heat treatment.

Fluoride-mediated nano-sized high-silica ZSM-5 as an ultrastable catalyst for methanol conversion to propylene

Fluoride mediated nano-sized ZSM-5 （ZSM-5-F） with a high Si/AI ratio of 181 was fabricated using a seed-induction method and evaluated the catalysis of the methanol to propylene （MTP） reaction. High propylene selectivity （45%） was similar to ZSM-5-OH synthesized via a hydroxide route. However, ZSM- 5-F showed much longer lifetime （305 h） compared with ZSM-5-OH （157 h） in spite of similar crystal size and aluminum content. Characterization by NH3-TPD. Py-IR, OH-IR, SEM, TG-DTA, XRD and 1H MAS NMR techniques indicated that the enhanced catalytic performance of ZSM-S-F is attributed to the fewer structural defects in the form of internal silanol groups and silanol nests.

Fast Growth of Highly Ordered TiO2 Nanotube Arrays on Si Substrate under High-Field Anodization

Highly ordered TiO_2 nanotube arrays(NTAs) on Si substrate possess broad applications due to its high surfaceto-volume ratio and novel functionalities, however, there are still some challenges on facile synthesis. Here, we report a simple and cost-effective high-field(90–180V) anodization method to grow highly ordered TiO_2 NTAs on Si substrate,and investigate the effect of anodization time, voltage, and fluoride content on the formation of TiO_2 NTAs. The current density–time curves, recorded during anodization processes, can be used to determine the optimum anodization time. It is found that the growth rate of TiO_2 NTAs is improved significantly under high field, which is nearly 8 times faster than that under low fields(40–60 V). The length and growth rate of the nanotubes are further increased with the increase of fluoride content in the electrolyte.

Improved Visible Transparency of SiO_2/ZnO:Al/CeO_2-TiO_2/SiO_2 Multilayer Films with High UV Absorption and Infrared Reflection Rate

New visible transparent, UV absorption, and high infrared reflection properties have been realized by depositing multilayer Si O2/Zn O: Al/Ce O2-Ti O2/Si O2 films onto glass substrates at low temperature by radio frequency magnetron sputtering. Optimum thickness of Si O2, Zn O: Al(ZAO) and Ce O2-Ti O2(CTO) films were designed with the aid of thin film design software. The degree of antireflection can be controlled by adjusting the thickness and refractive index. The outer Si O2 film can diminish the interference coloring and increase the transparency; the inner Si O2 film improves the adhesion of the coating on the glass substrate and prevents Ca2+, Na+ in the glass substrate from entering the ZAO film. The average transmittance in the visible light range increases by nearly 18%-20%, as compared to double layer ZAO/CTO films. And the films display high infrared reflection rate of above 75% in the wavelength range of 10-25 μm and good UV absorption(> 98%) properties. These systems are easy to produce on a large scale at low cost and exhibit high mechanical and chemical durability. The triple functional films with high UV absorption, antireflective and high infrared reflection rate will adapt to application in flat panel display and architectural coating glass, automotive glass, with diminishing light pollution as well as decreasing eye fatigue and increasing comfort.

Investigation of a novel spot defect on a hot dip galvanized high-silicon AHSS sheet

Improving the galvanizability of high silicon advanced high strength steels （AHSS） is a practical technical challenge. In this study, spot defects on an industrial hot dip galvanized （GI） sheet of an AHSS with 1.5 % Si has been studied in-depth. The surface morphologies of spot defects before and after partial and complete removal of the Zn layer, as well as the interface between the outermost coating layer and the sheet substrate were characterized using optical microscopy （ OM）, scanning electron microscopy （ SEM）, a 3-D optical profiler, energy dispersive spectroscopy（ EDS ） and focused ion beam （FIB） analysis. The most outstanding spot defect on the normally coated area of the steel sheet has a diameter of approximately 500μm, with the following characteristics. In the central region of the spot defect,Zn is barely coated and the sheet substrate is covered by a thin silicon oxide film with dispersed Zn-Fe intermetallics. At the periphery of the spot defect, a burst structure of Zn-Fe intermetallics forms on the sheet substrate. Outside the spot defect where the Zn layer is normally coated, there is a continuous Fe2Al5 inhibition layer between the Zn coating and the sheet substrate. These results indicate that a silicon oxide film forms on the substrate during annealing prior to hot dipping, thus preventing the formation of the Fe2Al5 inhibition layer during hot dipping. This causes spot defects on high Si AHSS sheets.

Composite electron transport layer for efficient N-I-P type monolithic perovskite/silicon tandem solar cells with high open-circuit voltage

Perovskite/silicon tandem solar cells(PSTSCs) have exhibited huge technological potential for breaking the Shockley-Queisser limit of single-junction solar cells. The efficiency of P-I-N type PSTSCs has surpassed the single-junction limit, while the performance of N-I-P type PSTSCs is far below the theoretical value. Here, we developed a composite electron transport layer for N-I-P type monolithic PSTSCs with enhanced open-circuit voltage(VOC) and power conversion efficiency(PCE). Lithium chloride(Li Cl) was added into the tin oxide(SnO_(2)) precursor solution, which simultaneously passivated the defects and increased the electron injection driving force at the electron transfer layer(ETL)/perovskite interface.Eventually, we achieved monolithic PSTSCs with an efficiency of 25.42% and V_(OC) of 1.92 V, which is the highest PCE and VOCin N-I-P type perovskite/Si tandem devices. This work on interface engineering for improving the PCE of monolithic PSTSCs may bring a new hot point about perovskite-based tandem devices.

Impact of Native Defects in the High Dielectric Constant Oxide HfSiO_4 on MOS Device Performance

Native dejects in HfSiO4 are investigated by first principles calculations. Transition levels of native detects can be accurately described by employing the nonlocal HSE06 hybrid functional. This methodology overcomes the band gap problem in traditional functionals. By band alignments among the Si, GaAs and HfSiO4. we are able to determine the position of defect levels in Si and GaAs relative to the HfSiO4 band gap. We evaluate the. possibility of these defects acting as fixed charge. Native defects lead to the change of valence and conduction band offsets. Gate leakage current is evaluated by the band offset. In addition, we also investigate diffusions of native defects, and discuss how they affect the MOS device performance.

Effect of Cu addition on overaging behaviour,room and high temperature tensile and fatigue properties of A357 alloy

The aims of the present work are to evaluate the overaging behaviour of the investigated Cu-enriched alloy and to assess its mechanical behaviour,in terms of the tensile and fatigue strength,at room temperature and at 200℃,and to correlate the mechanical performance with its microstructure,in particular with the secondary dendrite arm spacing(SDAS).The mechanical tests carried out on the overaged alloy at 200℃ indicate that the addition of about 1.3 wt.%Cu to the A357 alloy enables to maintain ultimate tensile strength and yield strength values close to 210 and 200 MPa,respectively,and fatigue strength at about 100 MPa.Compared to the quaternary(Al−Si−Cu−Mg)alloy C355,the A357−Cu alloy has greater mechanical properties at room temperature and comparable mechanical behaviour in the overaged condition at 200℃.The microstructural analyses highlight that SDAS affects the mechanical behaviour of the peak-aged A357−Cu alloy at room temperature,while its influence is negligible on the tensile and fatigue properties of the overaged alloy at 200℃.

Effects of Si δ-Doping Condition and Growth Interruption on Electrical Properties of InP-Based High Electron Mobility Transistor Structures

The InGaAs/InAIAs/InP high electron mobility transistor （HEM：F） structures with lattice-matched and pseudo- morphic channels are grown by gas source molecular beam epitaxy. Effects of Si ^-doping condition and growth interruption on the electrical properties are investigated by changing the Si-cell temperature, doping time and growth process. It is found that the optimal Si ^-doping concentration （Nd） is about 5.0 x 1012 cm-2 and the use of growth interruption has a dramatic effect on the improvement of electrical properties. The material structure and crystal interface are analyzed by secondary ion mass spectroscopy and high resolution transmission elec- tron microscopy. An InGaAs/InAiAs/InP HEMT device with a gate length of lOOnm is fabricated. The device presents good pinch-off characteristics and the kink-effect of the device is trifling. In addition, the device exhibits fT = 249 GHa and fmax 〉 400 GHz.

Optimization of High Power 1.55-μm Single Lateral Mode Fabry-Perot Ridge Waveguide Lasers

Optimization of the high power single-lateral-mode double-trench ridge waveguide semiconductor laser based on InGaAsP/InP quantum-well heterostructures with a separate confinement layer is reported. Two different waveguide structures of Fabry-Perot lasers emitting at a wavelength of 1.55 μm are fabricated. The influence of an effective lateral refractive index step on the maximum output power is investigated. A cw single mode output power of 165mW is obtained for a 1-mm-long uncoated laser.

高性能Cu-Ni-Si系合金研究现状及发展趋势

先进铜基材料具有广阔的市场及良好的发展前景。相比于Cu-Be, Cu-Fe-P, Cu-Cr等合金而言,Cu-Ni-Si系合金具有高强度、较高的导电率、良好的抗高温软化、抗应力松弛性能及低廉的价格等优点,广泛应用于机械制造、航空航天、交通运输、电子和电气工程等工业领域。本文首先介绍了Cu-Ni-Si系合金的发展现状,并从产品性能及产业化方面论述了国内外存在的差异。该合金发展趋势主要是朝着先进高强高导弹性铜合金方向发展,核心挑战是在提升强度的同时保持甚至提高导电性能,并且由于服役环境的复杂化及服役时间的延长,对于材料服役性能的可靠稳定性也提出了更为严苛的要求。最后从成分设计、加工及形变热处理工艺、时效析出行为、服役性能等方面综述了CuNi-Si系合金的研究现状,并针对目前该材料存在的不足,展望了高强度高导电铜合金的未来发展趋势。

Thermodynamic Study on the Compositions of Fluid Phases in the C-O-H System Under High Temperature and Pressure

Based on the fluid phase equilibrium of the C-O-H system, the compositions of var-ious fluid phases under high temperatures and pressures have been calculated in terms of the available thermodynamic data and new P-V-T data and on the assumption of PT = ΣPi in this paper. The results indicate that in this system there are 5 major fluid phases in different pro-portions at various T and P. CH4 is the dominant phase (about 70% ) under relatively lower T and P. Its proportion obviously decreases with increasing T, P and fo2. The results pro-vide sufficient theoretical grounds for discussing the possibility of CH4 formation and the physical-chemical conditions of its stable occurrence and proportion in the geological environment.

Synthesis and properties of Cr-Al-Si-N films deposited by hybrid coating system with high power impulse magnetron sputtering (HIPIMS) and DC pulse sputtering

The CrN and Cr-Al-Si-N films were deposited on Si wafer and SUS 304 substrates by a hybrid coating system with high power impulse magnetron sputtering (HIPIMS) and a DC pulse sputtering using Cr and AlSi targets under N2/Ar atmosphere.By varying the sputtering current of the AlSi target in the range of 0-2.5 A,both the Al and Si contents in the films increased gradually from 0 to 19.1% and 11.1% (mole fraction),respectively.The influences of the AlSi cathode DC pulse current on the microstructure,phase constituents,mechanical properties,and oxidation behaviors of the Cr-Al-Si-N films were investigated systematically.The results indicate that the as-deposited Cr-Al-Si-N films possess the typical nanocomposite structure,namely the face centered cubic (Cr,Al)N nano-crystallites are embedded in the amorphous Si3N4 matrix.With increasing the Al and Si contents,the hardness of the film first increases from 20.8 GPa for the CrN film to the peak value of 29.4 GPa for the Cr0.23Al0.14Si0.07 N film,and then decreases gradually.In the meanwhile,the Cr0.23Al0.14Si0.07N film also possesses excellent high-temperature oxidation resistance that is much better than that of the CrN film at 900 or 1000 °C.

Freeze-dried Si-Ni-San powder can ameliorate high fat diet-induced non-alcoholic fatty liver disease

BACKGROUND Non-alcoholic fatty liver disease(NAFLD)is a common chronic liver disease worldwide.However,to date,there is no ideal therapy for this disease.AIM To study the effects of Si-Ni-San freeze-dried powder on high fat diet-induced NAFLD in mice.METHODS Twenty-four male C57BL/6 mice were randomized into three groups of eight.The control group(CON)was allowed ad libitum access to a normal chow diet.The high fat diet group(FAT)and Si-Ni-San group(SNS)were allowed ad libitum access to a high fat diet.The SNS group was intragastrically administered Si-Ni-San freeze-dried powder(5.0 g/kg)once daily,and the CON and FAT groups were intragastrically administered distilled water.After 12 wk,body weight,liver index,visceral fat index,serum alanine aminotransferase(ALT),portal lipopoly-saccharide(LPS),liver tumor necrosis factor(TNF)-αand liver triglycerides were measured.Intestinal microbiota were analyzed using a 16S r DNA sequencing technique.RESULTS Compared with the FAT group,the SNS group exhibited decreased body weight,liver index,visceral fat index,serum ALT,portal LPS,liver TNF-αand liver triglycerides(P<0.05).Intestinal microbiota analysis showed that the SNS group had different bacterial composition and function compared with the FAT group.In particular,Oscillospira genus was a bacterial biomarker of SNS group samples.CONCLUSION The beneficial effects of Si-Ni-San freeze-dried powder on high fat diet-induced NAFLD in mice may be associated with its anti-inflammatory and changing intestinal microbiota effects.

Phase selection of ternary intermetallic compounds during solidification of high zinc magnesium alloy

The phase selection of ternary intermetallic compound τphase (Mg32(Al, Zn)49 ) and φ phase (Al2Mg5Zn2) in high zinc magnesium alloys was studied by using scanning electron microscope, X-ray diffractometer and differential scanning calorimeter, etc. The results indicate that, when adding element Si in Mg-8Zn-4Al-0.3Mn (ZA84) alloy, φ phase is promoted, whereas τ phase is inhibited. The Chinese script-type Mg2Si and matrix microstructure are greatly refined, the formation of τ phase is facilitated and φ phase is restrained when modifier Al-AlP master alloy is added in ZA84 alloy containing Si. The kinetics study of phase selection indicates that there is a critical degree of undercooling of the melt. If the undercooling exceeds the critical value, τ phase preferentially forms while φ phase is restrained; otherwise, φ phase preferentially forms while τ phase is restrained.